JP2011023349A - 試料の検査方法 - Google Patents
試料の検査方法 Download PDFInfo
- Publication number
- JP2011023349A JP2011023349A JP2010156809A JP2010156809A JP2011023349A JP 2011023349 A JP2011023349 A JP 2011023349A JP 2010156809 A JP2010156809 A JP 2010156809A JP 2010156809 A JP2010156809 A JP 2010156809A JP 2011023349 A JP2011023349 A JP 2011023349A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electrode
- carrier
- conductive
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000007689 inspection Methods 0.000 title abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 230000001939 inductive effect Effects 0.000 claims abstract 2
- 239000000523 sample Substances 0.000 claims description 347
- 230000007613 environmental effect Effects 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000003801 milling Methods 0.000 claims description 10
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 239000012472 biological sample Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 29
- 238000010894 electron beam technology Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000011888 foil Substances 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000000313 electron-beam-induced deposition Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001888 ion beam-induced deposition Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000013169 thromboelastometry Methods 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001886 ion microscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 methylcyclopentadienyl Chemical group 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2002—Controlling environment of sample
- H01J2237/2003—Environmental cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
【解決手段】試料キャリア500は、パッド505,508と接続する電極504,507を有する。領域A上に試料は設けられる。前記試料を前記試料キャリア上に設けた後、前記試料上に伝導性パターンが堆積される。それにより前記試料の特定部分に電圧又は電流を印加することが可能となる。前記試料上への前記パターンの堆積は、たとえばビーム誘起堆積又はインクジェットプリントによって行われて良い。前記試料内での電子部品-たとえばレジスタ、キャパシタ、インダクタ、及びFETのような能動素子-の構成についても教示する。
【選択図】図5a
Description
− 電極を備えた試料キャリアを供する工程、
− 試料を供する工程、
− 前記試料キャリア上に前記試料を設ける工程、
− 前記試料を当該粒子光学装置へ導入する工程、
− 前記試料中に電圧差又は電流を誘起する工程、
− 前記試料に前記粒子ビームを照射する工程、及び、
− 前記試料を透過する粒子を検出する工程、
を有する。
102 試料
103 材料
104 凹部
301 支持構造
302 外環
303 電子ビーム
304 回転対称軸
400 試料キャリア
401 薄い長方形部分
403 電極
404 電極
405a ギャップ
405b ギャップ
406 ギャップ
407 ギャップ
408 試料
409 伝導性トラック
410 伝導性トラック
411 位置
412 位置
414 側部
415 側壁
500 試料キャリア
501 半円状ディスク
502 絶縁層
503 絶縁層
504 伝導性トラック
505 パッド
506 終端部
507 伝導性トラック
508 パッド
509 (伝導性トラックの)終端部
511 伝導性トラック
512 伝導性トラック
513 伝導性トラック
514 絶縁層
600 環境セル
601 Si構造物
602 Si構造物
603 チャンバ
604 窓
605 窓
606 気体流入口
607 気体流出口
700 試料キャリア
702 ダイ
704 電極(終端部)
705 接触パッド
706 電極(終端部)
707 接触パッド
708 構造
709 構造
Claims (20)
- 粒子ビームによって試料を検査する装置によって試料を検査する方法であって、
当該方法は:
電極を備えた試料キャリアを供する工程、
試料を供する工程、
前記試料キャリア上に前記試料を設ける工程、
前記試料を当該粒子光学装置へ導入する工程、
前記試料中に電圧差又は電流を誘起する工程、
前記試料に前記粒子ビームを照射する工程、及び、
前記試料を透過する粒子を検出する工程、
を有し、
前記試料キャリア上に前記試料を設けた後であって前記粒子ビームを前記試料に照射する前に、少なくとも一部が前記試料キャリアの電極と接触する伝導性又は半導体性パターンが前記試料に堆積される、
ことを特徴とする方法。 - 前記の伝導性又は半導体性パターン及び/又は電極を堆積する工程が、ビーム誘起堆積又はインクジェットプリント法を有する、請求項1に記載の方法。
- 前記伝導性又は半導体性パターンは、光学顕微鏡又は粒子光学顕微鏡による目印を用いることによって前記試料に対して位置合わせされる、請求項1又は2に記載の方法。
- 前記試料のうちの少なくとも一面をミリングする工程をさらに有する、請求項1乃至3のうちのいずれか1項に記載の方法。
- 前記伝導性若しくは半導体性パターン及び/又は前記電極は、前記試料の少なくとも一面をミリングした後に形成される、請求項3に記載の方法。
- 半導体デバイス、レジスタ、キャパシタ、又は圧電部分が形成された電気電極と接続する、請求項1乃至5のうちのいずれか1項に記載の方法。
- 前記半導体デバイス、レジスタ、キャパシタ、又は圧電部分が前記試料の一部である、請求項6に記載の方法。
- 前記半導体デバイス、レジスタ、キャパシタ、又は圧電部分が前記試料上に形成される、請求項6に記載の方法。
- 前記試料が生体試料又はポリマーである、請求項1乃至8のうちのいずれか1項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは透過電子顕微鏡内で形成される、請求項2乃至9のうちのいずれか1項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは環境セル内で形成される、請求項2乃至10のうちのいずれか1項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは、前記粒子光学装置内に前記試料を導入する前に堆積される、請求項2乃至11のうちのいずれか1項に記載の方法。
- 前記試料上に前記伝導性又は半導体性パターンを形成する前に前記試料上に絶縁パターンを形成する工程を有する請求項1乃至13のうちのいずれか1項に記載の方法であって、
前記絶縁パターンは、前記伝導性又は半導体性パターンの少なくとも一部と前記試料との間に絶縁層を形成する、方法。 - 試料を運ぶ試料キャリアであって、
当該試料キャリアの少なくとも一部は、前記試料の一部と付着する又は支持する1つ以上の端部を有するシートとして形成され、
当該試料キャリアは前記1つ以上の端部にまで延在する電極を有し、かつ
前記電極は、該電極が試料ホルダと接触するための接触パッドを形成する領域にまで延在する、
ことを特徴とする、試料キャリア。 - 前記1つ以上の端部は試料が設けられるべき場所を取り囲む、請求項14に記載の試料キャリア。
- 前記1つ以上の端部は試料が設けられるべき場所を部分的に取り囲む、請求項14に記載の試料キャリア。
- 前記の試料が設けられるべき場所は当該試料キャリアの外側部分である、請求項16に記載の試料キャリア。
- 前記の試料が設けられるべき場所は、端部であってかつ電子を透過する薄膜全体にわたっている、請求項14乃至17のいずれか1項に記載の試料キャリア。
- 環境セルとして形成される請求項14乃至18のいずれか1項に記載の試料キャリアであって、
前記電極が延在し、かつ前記試料が設けられるべき前記端部は、前記環境セル内である、
試料キャリア。 - 前記電極は真空曝露されることが意図された地点に形成される、請求項19に記載の試料キャリア。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09165269A EP2278306A1 (en) | 2009-07-13 | 2009-07-13 | Method for inspecting a sample |
EP09165269.3 | 2009-07-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011023349A true JP2011023349A (ja) | 2011-02-03 |
JP5739116B2 JP5739116B2 (ja) | 2015-06-24 |
Family
ID=41426831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010156809A Active JP5739116B2 (ja) | 2009-07-13 | 2010-07-09 | 試料の検査方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8389936B2 (ja) |
EP (2) | EP2278306A1 (ja) |
JP (1) | JP5739116B2 (ja) |
CN (1) | CN101957327B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016490A (ja) * | 2011-07-05 | 2013-01-24 | National Chiao Tung University | 電子顕微鏡用試料ケース |
JP2013016494A (ja) * | 2011-07-05 | 2013-01-24 | National Chiao Tung University | 電子顕微鏡用試料箱 |
JP2014025755A (ja) * | 2012-07-25 | 2014-02-06 | Honda Motor Co Ltd | 電子顕微鏡用の試験片及びその製造方法 |
KR20140061451A (ko) * | 2011-09-14 | 2014-05-21 | 제이에프이 스틸 가부시키가이샤 | 전자선을 사용한 현미경 혹은 분석 장치용 시료 가열 홀더, 및 그것을 사용한 시료 가열 방법 |
JP2014137995A (ja) * | 2013-01-15 | 2014-07-28 | Fei Co | 電子顕微鏡用試料キャリア |
JP2016091674A (ja) * | 2014-10-31 | 2016-05-23 | 大日本印刷株式会社 | 試料収容セル |
JP2016213155A (ja) * | 2015-05-13 | 2016-12-15 | 大日本印刷株式会社 | 試料収容セル |
WO2021125010A1 (ja) * | 2019-12-16 | 2021-06-24 | 国立研究開発法人産業技術総合研究所 | 立体像観察方法及びこれに用いる試料グリッド |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8486287B2 (en) * | 2004-03-19 | 2013-07-16 | The Regents Of The University Of California | Methods for fabrication of positional and compositionally controlled nanostructures on substrate |
US8080791B2 (en) | 2008-12-12 | 2011-12-20 | Fei Company | X-ray detector for electron microscope |
EP2316565A1 (en) | 2009-10-26 | 2011-05-04 | Fei Company | A micro-reactor for observing particles in a fluid |
US9196457B2 (en) * | 2011-05-24 | 2015-11-24 | The Trustees Of The University Of Pennsylvania | Flow cells for electron microscope imaging with multiple flow streams |
CN102983049B (zh) * | 2012-11-22 | 2015-07-29 | 北京大学 | 透射电镜样品承载装置 |
US10157725B2 (en) | 2013-08-13 | 2018-12-18 | United Kingdom Research And Innovation | Electron microscopy sample support including porous metal foil |
CN103646839A (zh) * | 2013-11-08 | 2014-03-19 | 上海华力微电子有限公司 | 承载和固定tem样品的金属网 |
CN103730313B (zh) * | 2014-01-03 | 2015-10-14 | 东南大学 | 原位样品杆中基片供电电源、光-电双功能基片及其制法 |
EP2930736A1 (en) * | 2014-04-10 | 2015-10-14 | Centre National De La Recherche Scientifique | Sample holding micro vice and sample holding system for coupled transmission electron microscopy (TEM) and atom-probe tomography (APT) analyses |
NL2013706B1 (en) * | 2014-10-29 | 2016-10-04 | Univ Delft Tech | Improved microreactor for use in microscopy. |
US10309881B2 (en) * | 2015-06-30 | 2019-06-04 | The Regents Of The University Of California | Methods and apparatus for preparing aqueous specimens for electron microscopy using volatile surfactants |
CA3046200A1 (en) * | 2016-12-06 | 2018-06-14 | Brandeis University | Freezable fluid cell for cryo-electron microscopy |
CN110233092B (zh) * | 2018-03-02 | 2021-07-20 | 谢伯宗 | 电子显微镜样品芯片及其相关应用 |
TWI709993B (zh) * | 2019-06-18 | 2020-11-11 | 閎康科技股份有限公司 | 樣本承載裝置及其操作方法 |
US10921268B1 (en) * | 2019-09-09 | 2021-02-16 | Fei Company | Methods and devices for preparing sample for cryogenic electron microscopy |
DE102021131899B3 (de) | 2021-12-03 | 2023-03-23 | Carl Zeiss Microscopy Gmbh | Analysesystem, Analyseverfahren, Computerprogrammprodukt und Probenhalter |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007303946A (ja) * | 2006-05-11 | 2007-11-22 | Hitachi Ltd | 試料分析装置および試料分析方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3903324A (en) * | 1969-12-30 | 1975-09-02 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation |
NL8902727A (nl) | 1989-11-06 | 1991-06-03 | Philips Nv | Objecthouder voor ondersteuning van een object in een geladen deeltjesbundelsysteem. |
US5321977A (en) * | 1992-12-31 | 1994-06-21 | International Business Machines Corporation | Integrated tip strain sensor for use in combination with a single axis atomic force microscope |
DE69739785D1 (de) * | 1996-12-23 | 2010-04-08 | Fei Co | Partikel-optisches Gerät mit Niedertemperatur-Probenhalter |
EP1048071B1 (en) | 1998-10-09 | 2008-04-23 | Fei Company | Integrated circuit rewiring using gas-assisted focused ion beam (fib) etching |
US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
NL1023717C2 (nl) * | 2003-06-20 | 2004-12-21 | Fei Co | Preparaatdrager voor het dragen van een met een elektronenbundel te doorstralen preparaat. |
JP4199629B2 (ja) * | 2003-09-18 | 2008-12-17 | 株式会社日立ハイテクノロジーズ | 内部構造観察方法とその装置 |
US20050173631A1 (en) * | 2004-02-11 | 2005-08-11 | Valery Ray | Determining end points during charged particle beam processing |
NL1027025C2 (nl) | 2004-09-13 | 2006-03-14 | Univ Delft Tech | Microreactor voor een transmissie elektronenmicroscoop en verwarmingselement en werkwijze voor vervaardiging daarvan. |
EP1748030B1 (en) * | 2005-07-07 | 2016-04-20 | Fei Company | Method and apparatus for statistical characterization of nano-particles |
US7491934B2 (en) * | 2006-01-13 | 2009-02-17 | Ut-Battelle, Llc | SEM technique for imaging and measuring electronic transport in nanocomposites based on electric field induced contrast |
EP1863066A1 (en) * | 2006-05-29 | 2007-12-05 | FEI Company | Sample carrier and sample holder |
JP2008171800A (ja) * | 2006-10-31 | 2008-07-24 | Fei Co | 荷電粒子ビーム処理用保護層 |
JP5318364B2 (ja) * | 2007-01-31 | 2013-10-16 | 日本電子株式会社 | 試料保持体、試料検査装置及び試料検査方法、並びに試料保持体の製造方法 |
JP5253800B2 (ja) * | 2007-12-26 | 2013-07-31 | 日本電子株式会社 | 試料保持体及び観察・検査方法並びに観察・検査装置 |
US8805652B2 (en) * | 2008-06-05 | 2014-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Charge calibrator and system incorporating the same |
-
2009
- 2009-07-13 EP EP09165269A patent/EP2278306A1/en not_active Withdrawn
-
2010
- 2010-07-09 JP JP2010156809A patent/JP5739116B2/ja active Active
- 2010-07-09 US US12/833,750 patent/US8389936B2/en active Active
- 2010-07-12 EP EP10169200.2A patent/EP2278307B1/en active Active
- 2010-07-13 CN CN201010229845.XA patent/CN101957327B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007303946A (ja) * | 2006-05-11 | 2007-11-22 | Hitachi Ltd | 試料分析装置および試料分析方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016490A (ja) * | 2011-07-05 | 2013-01-24 | National Chiao Tung University | 電子顕微鏡用試料ケース |
JP2013016494A (ja) * | 2011-07-05 | 2013-01-24 | National Chiao Tung University | 電子顕微鏡用試料箱 |
KR101356673B1 (ko) * | 2011-07-05 | 2014-02-03 | 네이셔널 치아오 텅 유니버시티 | 전자현미경용 표본 상자 |
KR20140061451A (ko) * | 2011-09-14 | 2014-05-21 | 제이에프이 스틸 가부시키가이샤 | 전자선을 사용한 현미경 혹은 분석 장치용 시료 가열 홀더, 및 그것을 사용한 시료 가열 방법 |
KR101647901B1 (ko) * | 2011-09-14 | 2016-08-11 | 제이에프이 스틸 가부시키가이샤 | 전자선을 사용한 현미경 혹은 분석 장치용 시료 가열 홀더, 및 그것을 사용한 시료 가열 방법 |
JP2014025755A (ja) * | 2012-07-25 | 2014-02-06 | Honda Motor Co Ltd | 電子顕微鏡用の試験片及びその製造方法 |
JP2014137995A (ja) * | 2013-01-15 | 2014-07-28 | Fei Co | 電子顕微鏡用試料キャリア |
JP2016091674A (ja) * | 2014-10-31 | 2016-05-23 | 大日本印刷株式会社 | 試料収容セル |
JP2016213155A (ja) * | 2015-05-13 | 2016-12-15 | 大日本印刷株式会社 | 試料収容セル |
WO2021125010A1 (ja) * | 2019-12-16 | 2021-06-24 | 国立研究開発法人産業技術総合研究所 | 立体像観察方法及びこれに用いる試料グリッド |
JPWO2021125010A1 (ja) * | 2019-12-16 | 2021-06-24 | ||
JP7304098B2 (ja) | 2019-12-16 | 2023-07-06 | 国立研究開発法人産業技術総合研究所 | 立体像観察方法及びこれに用いる試料グリッド |
Also Published As
Publication number | Publication date |
---|---|
US8389936B2 (en) | 2013-03-05 |
EP2278306A1 (en) | 2011-01-26 |
JP5739116B2 (ja) | 2015-06-24 |
US20110006208A1 (en) | 2011-01-13 |
CN101957327A (zh) | 2011-01-26 |
EP2278307A1 (en) | 2011-01-26 |
EP2278307B1 (en) | 2015-09-02 |
CN101957327B (zh) | 2016-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5739116B2 (ja) | 試料の検査方法 | |
JP5869024B2 (ja) | 顕微鏡支持構造体 | |
US20130288182A1 (en) | Electron Beam Processing With Condensed Ice | |
Stevie et al. | Applications of focused ion beams in microelectronics production, design and development | |
US20090136682A1 (en) | Carbon nanotube synthesis for nanopore devices | |
US8268532B2 (en) | Method for forming microscopic structures on a substrate | |
US20060011830A1 (en) | Method of manufacturing the multi-tip probe, a multi-tip probe, and surface characteristic analysis apparatus | |
JP2009075089A (ja) | 試料の断面部を画像化するための方法及びシステム | |
JP2017502484A (ja) | 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用 | |
JP2009158222A (ja) | 試料保持体及び観察・検査方法並びに観察・検査装置 | |
US20100200766A1 (en) | Electron emitter having nano-structure tip and electron column using the same | |
TWI757578B (zh) | 半導體裝置之評估裝置 | |
US20170294291A1 (en) | APPLICATION OF eBIP TO INSPECTION, TEST, DEBUG AND SURFACE MODIFICATIONS | |
JP2016532267A (ja) | 多孔性の金属箔を備える電子顕微鏡試料支持体 | |
JP5084188B2 (ja) | 試料保持体、試料検査方法及び試料検査装置並びに試料検査システム | |
JP6353127B2 (ja) | 透過型低エネルギー電子顕微鏡 | |
JP5102968B2 (ja) | 導電性針およびその製造方法 | |
JP6408072B2 (ja) | 二次元ナノ材料を特徴付ける方法 | |
US20240038483A1 (en) | Charged particle microscopy mems sample support | |
WO2019155520A1 (ja) | プローブモジュールおよびプローブ | |
TWI757577B (zh) | 半導體裝置之製造方法 | |
WO2023175749A1 (ja) | 試料保持具、電子線装置、試料保持具の製造方法 | |
JP2014154233A (ja) | 電子線透過膜付き加熱デバイス | |
Kang et al. | Graphene Oxide‐Supported Microwell Grids for Preparing Cryo‐EM Samples with Controlled Ice Thickness | |
US20230154725A1 (en) | Emitter for emitting charged particles |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140407 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140410 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140527 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150304 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150312 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150331 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150423 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5739116 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |