JP5739116B2 - 試料の検査方法 - Google Patents
試料の検査方法 Download PDFInfo
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- JP5739116B2 JP5739116B2 JP2010156809A JP2010156809A JP5739116B2 JP 5739116 B2 JP5739116 B2 JP 5739116B2 JP 2010156809 A JP2010156809 A JP 2010156809A JP 2010156809 A JP2010156809 A JP 2010156809A JP 5739116 B2 JP5739116 B2 JP 5739116B2
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2002—Controlling environment of sample
- H01J2237/2003—Environmental cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
Description
− 電極を備えた試料キャリアを供する工程、
− 試料を供する工程、
− 前記試料キャリア上に前記試料を設ける工程、
− 前記試料を当該粒子光学装置へ導入する工程、
− 前記試料中に電圧差又は電流を誘起する工程、
− 前記試料に前記粒子ビームを照射する工程、及び、
− 前記試料を透過する粒子を検出する工程、
を有する。
102 試料
103 材料
104 凹部
301 支持構造
302 外環
303 電子ビーム
304 回転対称軸
400 試料キャリア
401 薄い長方形部分
403 電極
404 電極
405a ギャップ
405b ギャップ
406 ギャップ
407 ギャップ
408 試料
409 伝導性トラック
410 伝導性トラック
411 位置
412 位置
414 側部
415 側壁
500 試料キャリア
501 半円状ディスク
502 絶縁層
503 絶縁層
504 伝導性トラック
505 パッド
506 終端部
507 伝導性トラック
508 パッド
509 (伝導性トラックの)終端部
511 伝導性トラック
512 伝導性トラック
513 伝導性トラック
514 絶縁層
600 環境セル
601 Si構造物
602 Si構造物
603 チャンバ
604 窓
605 窓
606 気体流入口
607 気体流出口
700 試料キャリア
702 ダイ
704 電極(終端部)
705 接触パッド
706 電極(終端部)
707 接触パッド
708 構造
709 構造
Claims (11)
- 粒子ビームによって試料を検査する装置によって試料を検査する方法であって、
当該方法は:
電極を備えた試料キャリアを供する工程、
試料を供する工程、
前記試料キャリア上に前記試料を設ける工程、
前記試料上に伝導性又は半導体性パターンを形成する工程であって、前記パターンの少なくとも一部は前記試料キャリアの電極と電気的に接続する、工程、
前記試料を当該粒子光学装置へ導入する工程、
前記試料中に電圧差又は電流を誘起する工程、
前記試料に前記粒子ビームを照射する工程、及び、
前記試料を透過する粒子を検出する工程、
を有し、
前記電極と接続する半導体デバイス、レジスタ、キャパシタ、又は圧電部分が前記試料上に形成される、
ことを特徴とする方法。 - 前記の伝導性又は半導体性パターン及び/又は電極を堆積する工程が、ビーム誘起堆積又はインクジェットプリント法を有する、請求項1に記載の方法。
- 前記伝導性又は半導体性パターンは、光学顕微鏡又は粒子光学顕微鏡による目印を用いることによって前記試料に対して位置合わせされる、請求項1又は2に記載の方法。
- 前記試料のうちの少なくとも一面をミリングする工程をさらに有する、請求項1乃至3のうちのいずれか一項に記載の方法。
- 前記伝導性若しくは半導体性パターン及び/又は前記電極は、前記試料の少なくとも一面をミリングした後に形成される、請求項3に記載の方法。
- 前記半導体デバイス、レジスタ、キャパシタ、又は圧電部分が前記試料の一部である、請求項1に記載の方法。
- 前記試料が生体試料又はポリマーである、請求項1乃至6のうちのいずれか一項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは透過電子顕微鏡内で形成される、請求項2乃至7のうちのいずれか一項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは環境セル内で形成される、請求項2乃至8のうちのいずれか一項に記載の方法。
- 前記電極及び/又は前記伝導性若しくは半導体性パターンは、前記粒子光学装置内に前記試料を導入する前に堆積される、請求項2乃至9のうちのいずれか一項に記載の方法。
- 前記試料上に前記伝導性又は半導体性パターンを形成する前に前記試料上に絶縁パターンを形成する工程を有する請求項1乃至10のうちのいずれか一項に記載の方法であって、
前記絶縁パターンは、前記伝導性又は半導体性パターンの少なくとも一部と前記試料との間に絶縁層を形成する、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09165269.3 | 2009-07-13 | ||
EP09165269A EP2278306A1 (en) | 2009-07-13 | 2009-07-13 | Method for inspecting a sample |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011023349A JP2011023349A (ja) | 2011-02-03 |
JP5739116B2 true JP5739116B2 (ja) | 2015-06-24 |
Family
ID=41426831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010156809A Active JP5739116B2 (ja) | 2009-07-13 | 2010-07-09 | 試料の検査方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8389936B2 (ja) |
EP (2) | EP2278306A1 (ja) |
JP (1) | JP5739116B2 (ja) |
CN (1) | CN101957327B (ja) |
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US8486287B2 (en) * | 2004-03-19 | 2013-07-16 | The Regents Of The University Of California | Methods for fabrication of positional and compositionally controlled nanostructures on substrate |
US8080791B2 (en) * | 2008-12-12 | 2011-12-20 | Fei Company | X-ray detector for electron microscope |
EP2316565A1 (en) | 2009-10-26 | 2011-05-04 | Fei Company | A micro-reactor for observing particles in a fluid |
US9196457B2 (en) * | 2011-05-24 | 2015-11-24 | The Trustees Of The University Of Pennsylvania | Flow cells for electron microscope imaging with multiple flow streams |
TWI445038B (zh) * | 2011-07-05 | 2014-07-11 | Univ Nat Chiao Tung | 一種電子顯微鏡樣品盒 |
TWI463128B (zh) * | 2011-07-05 | 2014-12-01 | Univ Nat Chiao Tung | 一種電子顯微鏡樣品盒 |
KR101647901B1 (ko) * | 2011-09-14 | 2016-08-11 | 제이에프이 스틸 가부시키가이샤 | 전자선을 사용한 현미경 혹은 분석 장치용 시료 가열 홀더, 및 그것을 사용한 시료 가열 방법 |
JP5860355B2 (ja) * | 2012-07-25 | 2016-02-16 | 本田技研工業株式会社 | 電子顕微鏡用の試験片及びその製造方法 |
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CN110337706B (zh) * | 2016-12-06 | 2022-05-31 | 布兰迪斯大学 | 用于低温电子显微镜的可冻结流体单元 |
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EP1863066A1 (en) * | 2006-05-29 | 2007-12-05 | FEI Company | Sample carrier and sample holder |
JP2008171800A (ja) * | 2006-10-31 | 2008-07-24 | Fei Co | 荷電粒子ビーム処理用保護層 |
JP5318364B2 (ja) * | 2007-01-31 | 2013-10-16 | 日本電子株式会社 | 試料保持体、試料検査装置及び試料検査方法、並びに試料保持体の製造方法 |
JP5253800B2 (ja) * | 2007-12-26 | 2013-07-31 | 日本電子株式会社 | 試料保持体及び観察・検査方法並びに観察・検査装置 |
US8805652B2 (en) * | 2008-06-05 | 2014-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Charge calibrator and system incorporating the same |
-
2009
- 2009-07-13 EP EP09165269A patent/EP2278306A1/en not_active Withdrawn
-
2010
- 2010-07-09 US US12/833,750 patent/US8389936B2/en active Active
- 2010-07-09 JP JP2010156809A patent/JP5739116B2/ja active Active
- 2010-07-12 EP EP10169200.2A patent/EP2278307B1/en active Active
- 2010-07-13 CN CN201010229845.XA patent/CN101957327B/zh active Active
Also Published As
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US8389936B2 (en) | 2013-03-05 |
CN101957327A (zh) | 2011-01-26 |
US20110006208A1 (en) | 2011-01-13 |
CN101957327B (zh) | 2016-08-10 |
EP2278306A1 (en) | 2011-01-26 |
EP2278307A1 (en) | 2011-01-26 |
JP2011023349A (ja) | 2011-02-03 |
EP2278307B1 (en) | 2015-09-02 |
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