JP2011018949A - 表面実装型発光ダイオード素子 - Google Patents
表面実装型発光ダイオード素子 Download PDFInfo
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- JP2011018949A JP2011018949A JP2010242786A JP2010242786A JP2011018949A JP 2011018949 A JP2011018949 A JP 2011018949A JP 2010242786 A JP2010242786 A JP 2010242786A JP 2010242786 A JP2010242786 A JP 2010242786A JP 2011018949 A JP2011018949 A JP 2011018949A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 36
- 230000005855 radiation Effects 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 7
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】対になった電極を一つ以上内側に収容し、中央に所定空間を有するとともに、光を放射させるために開放された放射窓を有して形成されたパッケージと、前記パッケージ上に形成されて前記放射窓を覆うレンズと、前記パッケージ内部の電極上に実装されたLEDチップと、前記LEDチップと前記電極とを通電するためのワイヤーと、前記放射窓と隣接した前記レンズの表面に形成された蛍光体混合層と、を含んで表面実装型発光ダイオード素子を構成する。
【選択図】図3
Description
まず、本発明の第1実施例に係る表面実装型LED素子に対し、図3に基づいて詳細に説明する。
以下、本発明の第2実施例に対し、図8に基づいて説明する。第2実施例の構成のうち、第1実施例と同一の部分に対する説明は省略し、第2実施例では、第1実施例と異なる構成のみを詳述することにする。
30 空気
40 液状樹脂
50 リードフレーム
60 LEDチップ
70 ワイヤー
80 蛍光体混合層
90 レンズ
Claims (11)
- 一対からなる電極を一つ以上内側に収容し、中央に所定空間を有するとともに、光を放射させるために開放された放射窓を有して形成されたパッケージと、
前記パッケージ上に形成されて前記放射窓を覆うレンズと、
前記パッケージ内部の電極上に実装されたLEDチップと、
前記LEDチップと前記電極とを通電するためのワイヤーと、
前記放射窓と隣接した前記レンズの表面に形成された蛍光体混合層と、
を含む表面実装型発光ダイオード素子。 - 前記蛍光体混合層が形成されたレンズの表面は、放射窓の表面に対してレンズ方向に凹状をなす凹状溝を有することを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
- 前記凹状溝は、その内部表面が半球面からなることを特徴とする請求項2に記載の表面実装型発光ダイオード素子。
- 前記凹状溝は、その内部表面が溝の両端から中央部に向かってテーパーされた傾斜面からなることを特徴とする請求項2に記載の表面実装型発光ダイオード素子。
- 前記凹状溝は、その内部表面が凹凸面からなることを特徴とする請求項2に記載の表面実装型発光ダイオード素子。
- 前記蛍光体混合層が形成されたレンズの反対表面は、外部に向かって凸状をなす半球面からなることを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
- 前記パッケージの内部に充填され、前記LEDチップ及びワイヤーを保護する空気をさらに含むことを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
- 前記パッケージの内部に充填され、前記LEDチップ及びワイヤーを保護する液状樹脂をさらに含むことを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
- 前記パッケージは、一対のリード電極が一つ以上形成されてなるリードフレームの一部を内側に収容するように、モールディング樹脂で形成されることを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
- 前記モールディング樹脂は、透明合成樹脂材または不透明合成樹脂材からなることを特徴とする請求項9に記載の表面実装型発光ダイオード素子。
- 前記パッケージは、一対の電極が一つ以上印刷された回路基板で形成されることを特徴とする請求項1に記載の表面実装型発光ダイオード素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0070622 | 2006-07-27 | ||
KR1020060070622A KR100851636B1 (ko) | 2006-07-27 | 2006-07-27 | 표면실장형 발광다이오드 소자 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007112687A Division JP2008034799A (ja) | 2006-07-27 | 2007-04-23 | 表面実装型発光ダイオード素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011018949A true JP2011018949A (ja) | 2011-01-27 |
JP5419294B2 JP5419294B2 (ja) | 2014-02-19 |
Family
ID=38985276
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007112687A Pending JP2008034799A (ja) | 2006-07-27 | 2007-04-23 | 表面実装型発光ダイオード素子 |
JP2010242786A Expired - Fee Related JP5419294B2 (ja) | 2006-07-27 | 2010-10-28 | 表面実装型発光ダイオード素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007112687A Pending JP2008034799A (ja) | 2006-07-27 | 2007-04-23 | 表面実装型発光ダイオード素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7511312B2 (ja) |
JP (2) | JP2008034799A (ja) |
KR (1) | KR100851636B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190014015A (ko) * | 2019-01-22 | 2019-02-11 | 엘지이노텍 주식회사 | 발광 소자 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090002835A (ko) * | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
KR100998233B1 (ko) | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 led 패키지 |
KR100998009B1 (ko) * | 2008-03-12 | 2010-12-03 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
TWI364858B (en) * | 2008-06-19 | 2012-05-21 | Silitek Electronic Guangzhou | Photoelectric semiconductor device capable of generating uniform compound lights |
KR101406787B1 (ko) * | 2008-06-24 | 2014-06-12 | 삼성전자주식회사 | Led 패키지 |
KR101025994B1 (ko) * | 2008-07-07 | 2011-03-30 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 |
CN101358715A (zh) * | 2008-09-10 | 2009-02-04 | 和谐光电科技(泉州)有限公司 | 一种白光led的封装工艺 |
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US9685592B2 (en) | 2009-01-14 | 2017-06-20 | Cree Huizhou Solid State Lighting Company Limited | Miniature surface mount device with large pin pads |
US8299489B2 (en) * | 2010-08-03 | 2012-10-30 | Silitek Electronics (Guangzhou) Co., Ltd. | Illumination device |
KR101004713B1 (ko) * | 2009-04-22 | 2011-01-04 | 주식회사 에피밸리 | 디스플레이의 디밍 제어방법 |
US8803171B2 (en) * | 2009-07-22 | 2014-08-12 | Koninklijke Philips N.V. | Reduced color over angle variation LEDs |
KR100960099B1 (ko) * | 2009-09-02 | 2010-05-31 | (주)칸델라 | 엘이디 패키지용 렌즈 |
KR101064090B1 (ko) | 2009-11-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US8399267B2 (en) * | 2009-12-26 | 2013-03-19 | Achrolux Inc | Methods for packaging light emitting devices and related microelectronic devices |
US8525213B2 (en) | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
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US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
CN102044624B (zh) * | 2010-09-30 | 2012-03-21 | 比亚迪股份有限公司 | 一种可发复合光的led器件、发光元件及制造方法 |
CN102588752A (zh) * | 2011-01-07 | 2012-07-18 | 晶元光电股份有限公司 | 发光装置 |
KR20120093679A (ko) * | 2011-02-15 | 2012-08-23 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN102934228B (zh) * | 2011-03-02 | 2017-09-01 | 惠州科锐半导体照明有限公司 | 发光二极管封装件及发光二极管 |
GB201109065D0 (en) * | 2011-05-31 | 2011-07-13 | Nanoco Technologies Ltd | Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same |
CN102878445A (zh) * | 2011-07-15 | 2013-01-16 | 欧司朗股份有限公司 | 发光装置 |
KR101877410B1 (ko) * | 2011-08-01 | 2018-07-11 | 엘지이노텍 주식회사 | 발광소자 패키지 |
DE102012107547B4 (de) * | 2011-08-22 | 2020-12-31 | Samsung Electronics Co., Ltd. | Gehäuse für eine lichtabgebende Vorrichtung |
KR101893996B1 (ko) * | 2011-08-22 | 2018-09-04 | 삼성전자주식회사 | 발광소자 패키지 |
CN102569621A (zh) * | 2012-02-17 | 2012-07-11 | 江苏索尔光电科技有限公司 | 一种可实现小型化的led光源 |
US20130264577A1 (en) * | 2012-04-07 | 2013-10-10 | Axlen, Inc. | High flux high brightness led lighting devices |
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TW201403885A (zh) * | 2012-07-06 | 2014-01-16 | Lextar Electronics Corp | 發光二極體裝置 |
DE102012215449A1 (de) | 2012-08-31 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektronisches bauelement, elektronische baugruppe, verfahren zum herstellen eines gehäuses für ein elektronisches bauelement und verfahren zum herstellen einer elektronischen baugruppe |
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KR102107526B1 (ko) * | 2014-03-13 | 2020-05-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
JP2016076634A (ja) * | 2014-10-08 | 2016-05-12 | エルジー ディスプレイ カンパニー リミテッド | Ledパッケージ、バックライトユニット及び液晶表示装置 |
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KR101711643B1 (ko) * | 2016-04-05 | 2017-03-03 | 서울반도체 주식회사 | 컬러 렌즈를 이용한 발광 표시 장치 |
CN108321284B (zh) * | 2017-12-29 | 2021-02-23 | 华南师范大学 | 一种直下式量子点白光led背光模组及其制备方法 |
CN108594534A (zh) * | 2018-06-07 | 2018-09-28 | 华中科技大学 | 灯珠透镜一体化的led背光光源 |
JP7177330B2 (ja) * | 2018-06-28 | 2022-11-24 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR101970938B1 (ko) | 2019-02-11 | 2019-04-19 | 진재언 | 지향각이 조절된 발광소자 패키지 및 이를 이용한 발광장치 |
KR102105793B1 (ko) | 2019-06-12 | 2020-04-28 | 진명균 | 지향각이 조절된 발광소자 패키지 및 그를 이용한 발광장치 |
WO2024178665A1 (zh) * | 2023-03-01 | 2024-09-06 | 京东方科技集团股份有限公司 | 显示基板及其显示设备和制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484590A (en) * | 1987-09-25 | 1989-03-29 | Sumitomo Metal Ind | Thin film el element |
JP2001156338A (ja) * | 1999-11-24 | 2001-06-08 | Koha Co Ltd | 可視光線発光装置 |
JP2001298216A (ja) * | 2000-04-12 | 2001-10-26 | Matsushita Electric Ind Co Ltd | 表面実装型の半導体発光装置 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2004349647A (ja) * | 2003-05-26 | 2004-12-09 | Matsushita Electric Works Ltd | 発光装置及びその製造方法 |
JP2005191197A (ja) * | 2003-12-25 | 2005-07-14 | Kyocera Corp | 発光装置 |
WO2006059828A1 (en) * | 2004-09-10 | 2006-06-08 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6580097B1 (en) * | 1998-02-06 | 2003-06-17 | General Electric Company | Light emitting device with phosphor composition |
JP3942371B2 (ja) | 2001-03-26 | 2007-07-11 | 三洋電機株式会社 | 白色表示器 |
TW552726B (en) * | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
MY142684A (en) * | 2003-02-26 | 2010-12-31 | Cree Inc | Composite white light source and method for fabricating |
JP2005159045A (ja) | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | 半導体発光素子搭載部材とそれを用いた発光ダイオード |
JP2006190723A (ja) | 2004-12-28 | 2006-07-20 | Intekkusu Kk | 光源装置 |
JP5373243B2 (ja) * | 2005-02-24 | 2013-12-18 | 株式会社朝日ラバー | 発光ダイオード用レンズ部品及び発光ダイオード光源装置 |
JP5036222B2 (ja) * | 2006-06-01 | 2012-09-26 | 京セラ株式会社 | 発光装置 |
-
2006
- 2006-07-27 KR KR1020060070622A patent/KR100851636B1/ko not_active IP Right Cessation
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2007
- 2007-04-06 US US11/697,638 patent/US7511312B2/en not_active Expired - Fee Related
- 2007-04-23 JP JP2007112687A patent/JP2008034799A/ja active Pending
-
2010
- 2010-10-28 JP JP2010242786A patent/JP5419294B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484590A (en) * | 1987-09-25 | 1989-03-29 | Sumitomo Metal Ind | Thin film el element |
JP2001156338A (ja) * | 1999-11-24 | 2001-06-08 | Koha Co Ltd | 可視光線発光装置 |
JP2001298216A (ja) * | 2000-04-12 | 2001-10-26 | Matsushita Electric Ind Co Ltd | 表面実装型の半導体発光装置 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2004349647A (ja) * | 2003-05-26 | 2004-12-09 | Matsushita Electric Works Ltd | 発光装置及びその製造方法 |
JP2005191197A (ja) * | 2003-12-25 | 2005-07-14 | Kyocera Corp | 発光装置 |
WO2006059828A1 (en) * | 2004-09-10 | 2006-06-08 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins |
Cited By (2)
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KR20190014015A (ko) * | 2019-01-22 | 2019-02-11 | 엘지이노텍 주식회사 | 발광 소자 |
KR102101367B1 (ko) | 2019-01-22 | 2020-04-17 | 엘지이노텍 주식회사 | 발광 소자 |
Also Published As
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US20080023714A1 (en) | 2008-01-31 |
JP2008034799A (ja) | 2008-02-14 |
KR100851636B1 (ko) | 2008-08-13 |
JP5419294B2 (ja) | 2014-02-19 |
US7511312B2 (en) | 2009-03-31 |
KR20080010535A (ko) | 2008-01-31 |
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