JP2011014904A5 - - Google Patents
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- Publication number
- JP2011014904A5 JP2011014904A5 JP2010142938A JP2010142938A JP2011014904A5 JP 2011014904 A5 JP2011014904 A5 JP 2011014904A5 JP 2010142938 A JP2010142938 A JP 2010142938A JP 2010142938 A JP2010142938 A JP 2010142938A JP 2011014904 A5 JP2011014904 A5 JP 2011014904A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- conductive
- forming
- diffusion barrier
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims 40
- 230000004888 barrier function Effects 0.000 claims 16
- 238000009792 diffusion process Methods 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000000463 material Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 4
- 229910052741 iridium Inorganic materials 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 239000000956 alloy Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 229910052703 rhodium Inorganic materials 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- CNCZOAMEKQQFOA-HZQGBTCBSA-N 4-[(2s,3s,4r,5r,6r)-4,5-bis(3-carboxypropanoyloxy)-2-methyl-6-[[(2r,3r,4s,5r,6s)-3,4,5-tris(3-carboxypropanoyloxy)-6-[2-(3,4-dihydroxyphenyl)-5,7-dihydroxy-4-oxochromen-3-yl]oxyoxan-2-yl]methoxy]oxan-3-yl]oxy-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)O[C@@H]1[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](C)O[C@H]1OC[C@@H]1[C@@H](OC(=O)CCC(O)=O)[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](OC=2C(C3=C(O)C=C(O)C=C3OC=2C=2C=C(O)C(O)=CC=2)=O)O1 CNCZOAMEKQQFOA-HZQGBTCBSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 241001521328 Ruta Species 0.000 claims 2
- 235000003976 Ruta Nutrition 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 235000005806 ruta Nutrition 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/494,564 US7964966B2 (en) | 2009-06-30 | 2009-06-30 | Via gouged interconnect structure and method of fabricating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011014904A JP2011014904A (ja) | 2011-01-20 |
| JP2011014904A5 true JP2011014904A5 (https=) | 2013-10-03 |
Family
ID=43379790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010142938A Pending JP2011014904A (ja) | 2009-06-30 | 2010-06-23 | ビアがガウジングされた相互接続構造体及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7964966B2 (https=) |
| JP (1) | JP2011014904A (https=) |
| KR (1) | KR20110001894A (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110003191A (ko) * | 2009-07-03 | 2011-01-11 | 삼성전자주식회사 | 소자 분리막 및 반도체 소자의 형성 방법 |
| US9177917B2 (en) * | 2010-08-20 | 2015-11-03 | Micron Technology, Inc. | Semiconductor constructions |
| US9054110B2 (en) * | 2011-08-05 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-K dielectric layer and porogen |
| US8835305B2 (en) * | 2012-07-31 | 2014-09-16 | International Business Machines Corporation | Method of fabricating a profile control in interconnect structures |
| US9030013B2 (en) * | 2012-09-21 | 2015-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures comprising flexible buffer layers |
| US8749060B2 (en) * | 2012-09-21 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
| US10043706B2 (en) * | 2013-01-18 | 2018-08-07 | Taiwan Semiconductor Manufacturing Company Limited | Mitigating pattern collapse |
| US10032712B2 (en) * | 2013-03-15 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structure |
| CN111554659B (zh) * | 2013-03-29 | 2022-05-24 | 联华电子股份有限公司 | 插塞结构及其制作工艺 |
| US9349691B2 (en) | 2014-07-24 | 2016-05-24 | International Business Machines Corporation | Semiconductor device with reduced via resistance |
| US9991200B2 (en) | 2014-09-25 | 2018-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air gap structure and method |
| US9685370B2 (en) | 2014-12-18 | 2017-06-20 | Globalfoundries Inc. | Titanium tungsten liner used with copper interconnects |
| US10211148B2 (en) * | 2015-12-14 | 2019-02-19 | International Business Machines Corporation | Structural enhancement of Cu nanowires |
| US9935051B2 (en) | 2016-08-18 | 2018-04-03 | International Business Machines Corporation | Multi-level metallization interconnect structure |
| JP2018107227A (ja) * | 2016-12-26 | 2018-07-05 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、半導体装置の製造方法、及び、固体撮像素子 |
| US10615117B2 (en) * | 2016-12-29 | 2020-04-07 | Intel Corporation | Self-aligned via |
| WO2018190817A1 (en) * | 2017-04-12 | 2018-10-18 | Intel Corporation | Integrated circuit interconnects |
| KR102438179B1 (ko) * | 2017-11-02 | 2022-08-30 | 삼성전자주식회사 | 반도체 장치 및 이를 포함하는 반도체 패키지, 및 상기 반도체 장치의 제조 방법 |
| US20200111741A1 (en) * | 2018-10-09 | 2020-04-09 | International Business Machines Corporation | Vertical electrical fuse |
| US11177169B2 (en) * | 2019-06-21 | 2021-11-16 | International Business Machines Corporation | Interconnects with gouged vias |
| CN119364753B (zh) * | 2023-07-12 | 2026-02-13 | 长鑫科技集团股份有限公司 | 半导体结构及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005024912A1 (de) * | 2005-05-31 | 2006-12-07 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung von kupferenthaltenden Leitungen, die in einem Dielektrikum mit kleinem ε eingebettet sind, durch Vorsehen einer Versteifungsschicht |
| US7528066B2 (en) * | 2006-03-01 | 2009-05-05 | International Business Machines Corporation | Structure and method for metal integration |
| JP5162869B2 (ja) * | 2006-09-20 | 2013-03-13 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US20080128907A1 (en) * | 2006-12-01 | 2008-06-05 | International Business Machines Corporation | Semiconductor structure with liner |
| JP2009027048A (ja) * | 2007-07-23 | 2009-02-05 | Panasonic Corp | 半導体装置の製造方法 |
| US7846834B2 (en) * | 2008-02-04 | 2010-12-07 | International Business Machines Corporation | Interconnect structure and method for Cu/ultra low k integration |
| US7834457B2 (en) * | 2008-02-28 | 2010-11-16 | International Business Machines Corporation | Bilayer metal capping layer for interconnect applications |
-
2009
- 2009-06-30 US US12/494,564 patent/US7964966B2/en active Active
-
2010
- 2010-06-18 KR KR1020100057973A patent/KR20110001894A/ko not_active Withdrawn
- 2010-06-23 JP JP2010142938A patent/JP2011014904A/ja active Pending
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