JP2011014719A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011014719A
JP2011014719A JP2009157656A JP2009157656A JP2011014719A JP 2011014719 A JP2011014719 A JP 2011014719A JP 2009157656 A JP2009157656 A JP 2009157656A JP 2009157656 A JP2009157656 A JP 2009157656A JP 2011014719 A JP2011014719 A JP 2011014719A
Authority
JP
Japan
Prior art keywords
inductor
terminal
semiconductor device
wiring
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009157656A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011014719A5 (enExample
Inventor
Shingo Sakai
真吾 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009157656A priority Critical patent/JP2011014719A/ja
Priority to DE102010025506A priority patent/DE102010025506A1/de
Priority to US12/826,080 priority patent/US8355229B2/en
Publication of JP2011014719A publication Critical patent/JP2011014719A/ja
Publication of JP2011014719A5 publication Critical patent/JP2011014719A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2009157656A 2009-07-02 2009-07-02 半導体装置 Pending JP2011014719A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置
DE102010025506A DE102010025506A1 (de) 2009-07-02 2010-06-29 Halbleitervorrichtung
US12/826,080 US8355229B2 (en) 2009-07-02 2010-06-29 Semiconductor device with an inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2011014719A true JP2011014719A (ja) 2011-01-20
JP2011014719A5 JP2011014719A5 (enExample) 2012-04-05

Family

ID=43412539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157656A Pending JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Country Status (3)

Country Link
US (1) US8355229B2 (enExample)
JP (1) JP2011014719A (enExample)
DE (1) DE102010025506A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015114758A1 (ja) * 2014-01-29 2015-08-06 ルネサスエレクトロニクス株式会社 半導体装置
JP2016171163A (ja) * 2015-03-12 2016-09-23 ルネサスエレクトロニクス株式会社 半導体集積回路、通信モジュール、及びスマートメータ
CN111656467A (zh) * 2018-02-07 2020-09-11 国际商业机器公司 静电保护装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置
CN103400820B (zh) 2013-01-30 2016-08-10 威盛电子股份有限公司 半导体装置
US11912564B2 (en) * 2020-07-31 2024-02-27 Knowles Electronics, Llc Sensor package including a substrate with an inductor layer
CN115394770A (zh) * 2021-05-25 2022-11-25 意法半导体有限公司 无源静电放电传感器和用于检测静电放电的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008121619A1 (en) * 2007-03-29 2008-10-09 International Business Machines Corporation An integrated circuit structure incorporating an inductor, an associated design method and an associated design system
JP2009064923A (ja) * 2007-09-05 2009-03-26 Toshiba Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7400485B2 (en) * 2005-09-28 2008-07-15 Tdk Corporation Surge absorber
JP4312188B2 (ja) 2005-09-30 2009-08-12 Ｔｄｋ株式会社 インダクタ素子
JP2009157656A (ja) 2007-12-26 2009-07-16 Samsung Electronics Co Ltd 画像処理装置、画像処理方法、プログラム、および表示装置
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008121619A1 (en) * 2007-03-29 2008-10-09 International Business Machines Corporation An integrated circuit structure incorporating an inductor, an associated design method and an associated design system
JP2010523001A (ja) * 2007-03-29 2010-07-08 インターナショナル・ビジネス・マシーンズ・コーポレーション インダクタを組み込んだ集積回路構造体、その設計方法、及びその設計システム
JP2009064923A (ja) * 2007-09-05 2009-03-26 Toshiba Corp 半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015114758A1 (ja) * 2014-01-29 2015-08-06 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2015114758A1 (ja) * 2014-01-29 2017-03-23 ルネサスエレクトロニクス株式会社 半導体装置
US9711451B2 (en) 2014-01-29 2017-07-18 Renesas Electronics Corporation Semiconductor device with coils in different wiring layers
US10062642B2 (en) 2014-01-29 2018-08-28 Renesas Electronics Corporation Semiconductor device with inductively coupled coils
CN110349932A (zh) * 2014-01-29 2019-10-18 瑞萨电子株式会社 半导体器件
US10483199B2 (en) 2014-01-29 2019-11-19 Renesas Electronics Corporation Semiconductor device with coils in different wiring layers
JP2016171163A (ja) * 2015-03-12 2016-09-23 ルネサスエレクトロニクス株式会社 半導体集積回路、通信モジュール、及びスマートメータ
US10361665B2 (en) 2015-03-12 2019-07-23 Renesas Electronics Corporation Semiconductor integrated circuit, communication module, and smart meter
CN111656467A (zh) * 2018-02-07 2020-09-11 国际商业机器公司 静电保护装置
JP2021513738A (ja) * 2018-02-07 2021-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電子回路の入力ポートを保護するための静電気保護デバイスおよび集積回路
JP7189958B2 (ja) 2018-02-07 2022-12-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 電子回路の入力ポートを保護するための静電気保護デバイスおよび集積回路
CN111656467B (zh) * 2018-02-07 2024-05-28 国际商业机器公司 静电保护装置

Also Published As

Publication number Publication date
DE102010025506A1 (de) 2011-02-24
US8355229B2 (en) 2013-01-15
US20110002076A1 (en) 2011-01-06

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