JP2011014719A5 - - Google Patents

Download PDF

Info

Publication number
JP2011014719A5
JP2011014719A5 JP2009157656A JP2009157656A JP2011014719A5 JP 2011014719 A5 JP2011014719 A5 JP 2011014719A5 JP 2009157656 A JP2009157656 A JP 2009157656A JP 2009157656 A JP2009157656 A JP 2009157656A JP 2011014719 A5 JP2011014719 A5 JP 2011014719A5
Authority
JP
Japan
Prior art keywords
circuit
semiconductor device
connection node
discharge element
electrostatic discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009157656A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011014719A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009157656A priority Critical patent/JP2011014719A/ja
Priority claimed from JP2009157656A external-priority patent/JP2011014719A/ja
Priority to US12/826,080 priority patent/US8355229B2/en
Priority to DE102010025506A priority patent/DE102010025506A1/de
Publication of JP2011014719A publication Critical patent/JP2011014719A/ja
Publication of JP2011014719A5 publication Critical patent/JP2011014719A5/ja
Pending legal-status Critical Current

Links

JP2009157656A 2009-07-02 2009-07-02 半導体装置 Pending JP2011014719A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置
US12/826,080 US8355229B2 (en) 2009-07-02 2010-06-29 Semiconductor device with an inductor
DE102010025506A DE102010025506A1 (de) 2009-07-02 2010-06-29 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2011014719A JP2011014719A (ja) 2011-01-20
JP2011014719A5 true JP2011014719A5 (enExample) 2012-04-05

Family

ID=43412539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157656A Pending JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Country Status (3)

Country Link
US (1) US8355229B2 (enExample)
JP (1) JP2011014719A (enExample)
DE (1) DE102010025506A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置
CN103400820B (zh) 2013-01-30 2016-08-10 威盛电子股份有限公司 半导体装置
EP3101685B1 (en) 2014-01-29 2020-01-01 Renesas Electronics Corporation Semiconductor device
JP2016171163A (ja) 2015-03-12 2016-09-23 ルネサスエレクトロニクス株式会社 半導体集積回路、通信モジュール、及びスマートメータ
US10742026B2 (en) * 2018-02-07 2020-08-11 International Business Machines Corporation Electrostatic protection device
US11912564B2 (en) * 2020-07-31 2024-02-27 Knowles Electronics, Llc Sensor package including a substrate with an inductor layer
CN218498072U (zh) * 2021-05-25 2023-02-17 意法半导体有限公司 集成电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7400485B2 (en) * 2005-09-28 2008-07-15 Tdk Corporation Surge absorber
JP4312188B2 (ja) 2005-09-30 2009-08-12 Ｔｄｋ株式会社 インダクタ素子
US7750408B2 (en) * 2007-03-29 2010-07-06 International Business Machines Corporation Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuit
JP2009064923A (ja) * 2007-09-05 2009-03-26 Toshiba Corp 半導体装置
JP2009157656A (ja) 2007-12-26 2009-07-16 Samsung Electronics Co Ltd 画像処理装置、画像処理方法、プログラム、および表示装置
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置

Similar Documents

Publication Publication Date Title
JP2011014719A5 (enExample)
JP2011238312A5 (enExample)
DK2011215T3 (da) Elektriske maskiner.
TWI346367B (en) Stacked integrated circuit and semiconductor component
JP2013178522A5 (ja) 半導体装置
JP2010178026A5 (enExample)
DE602008004858D1 (de) Halbleiterpaket
DK2249392T3 (da) Omvendt ledende halvlederenhed
SI2149902T1 (sl) Močnostni polprevodniški moduli in naprava za električni oblok, ki le-tega uporablja
JP2010244935A5 (enExample)
JP2012033615A5 (enExample)
FI20040462A0 (fi) Tehopuolijohdekomponenttien suojaus
ITMI20062176A1 (it) Dispositivo semiconduttore avente una regione di separazione
JP2014030321A5 (enExample)
DE602007013332D1 (de) Halbleiterspeichervorrichtung
JP2012099199A5 (enExample)
DE602006016247D1 (de) Leistungs-halbleitermodul
DK2033266T3 (da) Ledertilslutningsklemme
IT1397432B1 (it) Circuito generatore di una grandezza elettrica di riferimento.
JP2013136288A5 (enExample)
JP2013512203A5 (enExample)
DE602007002574D1 (de) Halbleiterspeicherelement
GB0819936D0 (en) Semiconductor integrated circuit
ITMI20062237A1 (it) Circuito elettrico con protezione dalle sovratensioni
GB0520909D0 (en) Power semiconductor devices