DE602006016247D1 - Leistungs-halbleitermodul - Google Patents

Leistungs-halbleitermodul

Info

Publication number
DE602006016247D1
DE602006016247D1 DE602006016247T DE602006016247T DE602006016247D1 DE 602006016247 D1 DE602006016247 D1 DE 602006016247D1 DE 602006016247 T DE602006016247 T DE 602006016247T DE 602006016247 T DE602006016247 T DE 602006016247T DE 602006016247 D1 DE602006016247 D1 DE 602006016247D1
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor module
module
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016247T
Other languages
English (en)
Inventor
Norifumi Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of DE602006016247D1 publication Critical patent/DE602006016247D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C3/00—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
    • H01C3/06—Flexible or folding resistors, whereby such a resistor can be looped or collapsed upon itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE602006016247T 2005-03-23 2006-03-16 Leistungs-halbleitermodul Active DE602006016247D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005084361 2005-03-23
JP2006069326A JP4661645B2 (ja) 2005-03-23 2006-03-14 パワー半導体モジュール
PCT/JP2006/305770 WO2006101150A2 (en) 2005-03-23 2006-03-16 Power semiconductor module

Publications (1)

Publication Number Publication Date
DE602006016247D1 true DE602006016247D1 (de) 2010-09-30

Family

ID=36581747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016247T Active DE602006016247D1 (de) 2005-03-23 2006-03-16 Leistungs-halbleitermodul

Country Status (5)

Country Link
US (1) US8269331B2 (de)
EP (1) EP1861878B1 (de)
JP (1) JP4661645B2 (de)
DE (1) DE602006016247D1 (de)
WO (1) WO2006101150A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4436843B2 (ja) 2007-02-07 2010-03-24 株式会社日立製作所 電力変換装置
JP5488540B2 (ja) 2011-07-04 2014-05-14 トヨタ自動車株式会社 半導体モジュール
JP5935672B2 (ja) 2012-01-31 2016-06-15 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
JP5754398B2 (ja) * 2012-03-09 2015-07-29 三菱電機株式会社 半導体装置
DE102012206271A1 (de) * 2012-04-17 2013-10-17 Semikron Elektronik Gmbh & Co. Kg Flüssigkeitsgekühlte Anordnung mit anreihbaren Leistungshalbleitermodulen und mindestens einer Kondensatoreinrichtung und Leistungshalbleitermodul hierzu
JP5915350B2 (ja) * 2012-04-19 2016-05-11 富士電機株式会社 パワー半導体モジュール
JP5860784B2 (ja) * 2012-09-10 2016-02-16 日立オートモティブシステムズ株式会社 パワー半導体モジュール
KR101482317B1 (ko) * 2012-10-30 2015-01-13 삼성전기주식회사 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지
JP5737272B2 (ja) 2012-11-14 2015-06-17 トヨタ自動車株式会社 半導体装置
CN203445107U (zh) * 2013-08-13 2014-02-19 深圳市朗科智能电气股份有限公司 一种镇流器内部隔离散热结构
DE202013104510U1 (de) 2013-10-04 2013-11-14 Abb Technology Ag Halbleiterstapel für Umrichter mit Snubber-Kondensatoren
DE102017105351B4 (de) * 2017-03-14 2022-11-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Leistungshalbleiterbauelementen und einem Kondensator
JP2020137159A (ja) * 2019-02-13 2020-08-31 トヨタ自動車株式会社 電力変換器
JP7105214B2 (ja) * 2019-07-24 2022-07-22 株式会社日立製作所 パワー半導体装置
US20230378888A1 (en) 2020-10-05 2023-11-23 Valeo Eautomotive Germany Gmbh Electrical system with an electrical power module and a dc link capacitor and method for manufacturing such an electrical system
JP2023003947A (ja) * 2021-06-25 2023-01-17 日本電産株式会社 コンデンサモジュールとこれを備えたインバータ装置、モータモジュール及び車両

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120760Y2 (de) * 1980-06-17 1986-06-21
US4454529A (en) * 1981-01-12 1984-06-12 Avx Corporation Integrated circuit device having internal dampening for a plurality of power supplies
JPH05161253A (ja) 1991-12-09 1993-06-25 Fuji Electric Co Ltd 半導体電力変換装置のスナバ回路
DE4230510C1 (de) * 1992-09-11 1993-09-02 Gruendl Und Hoffmann Gesellschaft Fuer Elektrotechnische Entwicklungen Mbh, 82319 Starnberg, De
JPH06209562A (ja) 1993-01-05 1994-07-26 Central Japan Railway Co 電力変換装置の浸漬形沸騰冷却装置
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement
JP2000092847A (ja) 1998-09-14 2000-03-31 Denso Corp コンデンサ付き半導体モジュール装置
JP3501685B2 (ja) 1999-06-04 2004-03-02 三菱電機株式会社 電力変換装置
JP3460973B2 (ja) 1999-12-27 2003-10-27 三菱電機株式会社 電力変換装置
JP3484122B2 (ja) * 2000-01-13 2004-01-06 三菱電機株式会社 電力変換装置
EP1148547B8 (de) 2000-04-19 2016-01-06 Denso Corporation Kühlmittelgekühlte Halbleiteranordnung
JP4423746B2 (ja) * 2000-05-10 2010-03-03 株式会社デンソー 冷媒冷却型両面冷却半導体装置
JP2002057173A (ja) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd 回路装置の製造方法
WO2002017400A1 (fr) * 2000-08-18 2002-02-28 Mitsubishi Denki Kabushiki Kaisha Module d'alimentation
JP3847676B2 (ja) * 2002-07-15 2006-11-22 三菱電機株式会社 パワー半導体装置
JP2004152982A (ja) 2002-10-30 2004-05-27 Matsushita Electric Ind Co Ltd 電子部品実装済部品の製造方法、及び該電子部品実装済部品を備えた電子部品実装済完成品の製造方法、並びに電子部品実装済完成品

Also Published As

Publication number Publication date
WO2006101150A2 (en) 2006-09-28
EP1861878A2 (de) 2007-12-05
US20080192437A1 (en) 2008-08-14
US8269331B2 (en) 2012-09-18
WO2006101150A3 (en) 2007-04-19
JP2006303455A (ja) 2006-11-02
JP4661645B2 (ja) 2011-03-30
EP1861878B1 (de) 2010-08-18

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