JP2011008683A5 - - Google Patents

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Publication number
JP2011008683A5
JP2011008683A5 JP2009153702A JP2009153702A JP2011008683A5 JP 2011008683 A5 JP2011008683 A5 JP 2011008683A5 JP 2009153702 A JP2009153702 A JP 2009153702A JP 2009153702 A JP2009153702 A JP 2009153702A JP 2011008683 A5 JP2011008683 A5 JP 2011008683A5
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JP
Japan
Prior art keywords
reference voltage
generating
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009153702A
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English (en)
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JP2011008683A (ja
JP5412190B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2009153702A priority Critical patent/JP5412190B2/ja
Priority claimed from JP2009153702A external-priority patent/JP5412190B2/ja
Priority to US12/796,033 priority patent/US20100327841A1/en
Publication of JP2011008683A publication Critical patent/JP2011008683A/ja
Publication of JP2011008683A5 publication Critical patent/JP2011008683A5/ja
Application granted granted Critical
Publication of JP5412190B2 publication Critical patent/JP5412190B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (1)

  1. レファレンス電圧を生成するレファレンス電圧生成手段を備えた半導体集積回路装置であって、
    前記レファレンス電圧生成手段は、
    前記レファレンス電圧を生成するレファレンス電圧生成部と、
    低消費電力モードの１つであるスタンバイモード時に、前記レファレンス電圧生成部を間欠動作させて前記レファレンス電圧を生成する間欠動作制御部とを備えたことを特徴とする半導体集積回路装置。
JP2009153702A 2009-06-29 2009-06-29 半導体集積回路装置 Expired - Fee Related JP5412190B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009153702A JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置
US12/796,033 US20100327841A1 (en) 2009-06-29 2010-06-08 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009153702A JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2011008683A JP2011008683A (ja) 2011-01-13
JP2011008683A5 true JP2011008683A5 (ja) 2012-05-24
JP5412190B2 JP5412190B2 (ja) 2014-02-12

Family

ID=43379947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009153702A Expired - Fee Related JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置

Country Status (2)

Country Link
US (1) US20100327841A1 (ja)
JP (1) JP5412190B2 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5695439B2 (ja) * 2011-02-18 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6120528B2 (ja) * 2012-11-08 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015069019A (ja) 2013-09-30 2015-04-13 シナプティクス・ディスプレイ・デバイス株式会社 半導体装置
KR102190453B1 (ko) * 2014-02-17 2020-12-11 삼성전자주식회사 전력 관리 장치 및 이를 포함하는 시스템 온 칩
JP6492507B2 (ja) 2014-10-06 2019-04-03 株式会社デンソー 電子制御装置
JP5888387B1 (ja) * 2014-10-22 2016-03-22 ミツミ電機株式会社 電池保護回路及び電池保護装置、並びに電池パック
KR20170007036A (ko) 2015-07-10 2017-01-18 에스케이하이닉스 주식회사 입력 회로 및 이를 포함하는 반도체 장치
CN113448458A (zh) * 2020-03-25 2021-09-28 昇佳电子股份有限公司 电容感测电路
US11404129B1 (en) 2021-02-05 2022-08-02 Micron Technology, Inc. Power architecture for non-volatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318365B2 (ja) * 1992-10-20 2002-08-26 富士通株式会社 定電圧回路
JPH09288897A (ja) * 1996-04-19 1997-11-04 Sony Corp 電圧供給回路
US5959471A (en) * 1997-09-25 1999-09-28 Siemens Aktiengesellschaft Method and apparatus for reducing the bias current in a reference voltage circuit
JP3293584B2 (ja) * 1999-03-02 2002-06-17 日本電気株式会社 基準電圧発生装置および方法
JP3398693B2 (ja) * 1999-08-24 2003-04-21 エヌイーシーマイクロシステム株式会社 半導体記憶装置
JP2002091591A (ja) * 2000-09-14 2002-03-29 Seiko Epson Corp 定電圧出力装置
GB2376081B (en) * 2001-03-14 2004-12-08 Micron Technology Inc Measurement of the integrity of a power supply
JP2003005844A (ja) * 2001-06-25 2003-01-08 Matsushita Electric Ind Co Ltd 低消費電流型レギュレータ回路
TW200524139A (en) * 2003-12-24 2005-07-16 Renesas Tech Corp Voltage generating circuit and semiconductor integrated circuit
JP5067836B2 (ja) * 2005-12-19 2012-11-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその動作方法
JP5460093B2 (ja) * 2009-03-26 2014-04-02 ラピスセミコンダクタ株式会社 半導体メモリの内部電源制御回路及び半導体装置

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