JP2010541295A - 半導体波長コンバータが接合された発光ダイオード - Google Patents

半導体波長コンバータが接合された発光ダイオード Download PDF

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Publication number
JP2010541295A
JP2010541295A JP2010528921A JP2010528921A JP2010541295A JP 2010541295 A JP2010541295 A JP 2010541295A JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010541295 A JP2010541295 A JP 2010541295A
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Prior art keywords
led
wavelength converter
wafer
planarized surface
converter
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JP2010528921A
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Japanese (ja)
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JP2010541295A5 (enExample
Inventor
トミー ダブリュ． ケリー，
マイケル エー． ハッセ，
キャサリン エー． レザーデール，
テリー エル． スミス，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2010541295A publication Critical patent/JP2010541295A/ja
Publication of JP2010541295A5 publication Critical patent/JP2010541295A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
JP2010528921A 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード Pending JP2010541295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08
PCT/US2008/075710 WO2009048704A2 (en) 2007-10-08 2008-09-09 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

Publication Number Publication Date
JP2010541295A true JP2010541295A (ja) 2010-12-24
JP2010541295A5 JP2010541295A5 (enExample) 2011-10-20

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JP2010528921A Pending JP2010541295A (ja) 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード

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US (1) US20100283074A1 (enExample)
EP (1) EP2206164A2 (enExample)
JP (1) JP2010541295A (enExample)
KR (1) KR20100077191A (enExample)
CN (1) CN101821866B (enExample)
TW (1) TW200924249A (enExample)
WO (1) WO2009048704A2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
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JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ
JP2012521644A (ja) * 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2018525794A (ja) * 2015-08-17 2018-09-06 インフィニット アースロスコピー インコーポレーテッド， リミテッド 光源
JP2019508732A (ja) * 2016-01-27 2019-03-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 変換要素、および、このタイプの変換要素を備えた放射放出半導体装置
US10610089B2 (en) 2017-02-15 2020-04-07 Infinite Arthroscopy, Inc. Limited Wireless imaging system comprising a head unit and a light cable that comprises an integrated light source
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
US11330963B2 (en) 2015-11-16 2022-05-17 Lazurite Holdings Llc Wireless medical imaging system
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source

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KR20100097205A (ko) * 2007-12-10 2010-09-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드
WO2009085594A2 (en) * 2007-12-28 2009-07-09 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8748911B2 (en) * 2008-07-16 2014-06-10 3M Innovative Properties Company Stable light source
EP2335296A2 (en) * 2008-09-04 2011-06-22 3M Innovative Properties Company Light source having light blocking components
US8488641B2 (en) * 2008-09-04 2013-07-16 3M Innovative Properties Company II-VI MQW VSEL on a heat sink optically pumped by a GaN LD
WO2010027581A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
CN102318088A (zh) 2008-12-24 2012-01-11 3M创新有限公司 制备双面波长转换器和使用所述双面波长转换器的光产生装置的方法
CN102804422A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 用于与led结合使用的重发光半导体载流子器件及其制造方法
CN102804411A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 利用铟耗尽机理在含铟衬底上生长的半导体器件
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
DE102009027977A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
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CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
DE102015105693B4 (de) 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102384731B1 (ko) * 2017-10-17 2022-04-08 삼성전자주식회사 Led 장치 및 그 제조 방법
CN112086548A (zh) * 2018-07-16 2020-12-15 厦门三安光电有限公司 微发光装置及其显示器
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN109841710B (zh) * 2019-04-12 2020-05-15 南京大学 用于透明显示的GaN Micro-LED阵列器件及其制备方法
JP7071648B2 (ja) * 2019-05-16 2022-05-19 日亜化学工業株式会社 発光装置及び発光装置の製造方法
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Cited By (15)

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Publication number Priority date Publication date Assignee Title
JP2012521644A (ja) * 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ
US11137117B2 (en) 2015-08-17 2021-10-05 Lazurite Holdings Llc Light converter
JP2018525794A (ja) * 2015-08-17 2018-09-06 インフィニット アースロスコピー インコーポレーテッド， リミテッド 光源
US10488018B2 (en) 2015-08-17 2019-11-26 Infinite Arthroscopy, Inc. Limited Light source
US12292164B2 (en) 2015-08-17 2025-05-06 Lazurite Holdings Llc Light source
JP2020123573A (ja) * 2015-08-17 2020-08-13 インフィニット アースロスコピー インコーポレーテッド， リミテッド 光変換器
US11330963B2 (en) 2015-11-16 2022-05-17 Lazurite Holdings Llc Wireless medical imaging system
JP2019508732A (ja) * 2016-01-27 2019-03-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 変換要素、および、このタイプの変換要素を備えた放射放出半導体装置
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US10932658B2 (en) 2017-02-15 2021-03-02 Infinite Arthroscopy, Inc. Limited Wireless imaging system comprising a head unit and a light cable that comprises an integrated light source
US11889987B2 (en) 2017-02-15 2024-02-06 Lazurite Holdings Llc Wireless imaging system
US10610089B2 (en) 2017-02-15 2020-04-07 Infinite Arthroscopy, Inc. Limited Wireless imaging system comprising a head unit and a light cable that comprises an integrated light source
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source

Also Published As

Publication number Publication date
KR20100077191A (ko) 2010-07-07
TW200924249A (en) 2009-06-01
EP2206164A2 (en) 2010-07-14
US20100283074A1 (en) 2010-11-11
CN101821866A (zh) 2010-09-01
WO2009048704A3 (en) 2009-05-28
CN101821866B (zh) 2012-05-23
WO2009048704A2 (en) 2009-04-16

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