CN101821866B - 具有粘接的半导体波长转换器的发光二极管 - Google Patents

具有粘接的半导体波长转换器的发光二极管 Download PDF

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Publication number
CN101821866B
CN101821866B CN2008801107526A CN200880110752A CN101821866B CN 101821866 B CN101821866 B CN 101821866B CN 2008801107526 A CN2008801107526 A CN 2008801107526A CN 200880110752 A CN200880110752 A CN 200880110752A CN 101821866 B CN101821866 B CN 101821866B
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China
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led
textured surface
wavelength converter
converter
stack
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Expired - Fee Related
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Chinese (zh)
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CN101821866A (zh
Inventor
托米·W·凯利
迈克尔·A·哈斯
凯瑟琳·A·莱瑟达勒
特里·L·史密斯
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Device Packages (AREA)
CN2008801107526A 2007-10-08 2008-09-09 具有粘接的半导体波长转换器的发光二极管 Expired - Fee Related CN101821866B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08
US60/978,304 2007-10-08
PCT/US2008/075710 WO2009048704A2 (en) 2007-10-08 2008-09-09 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

Publication Number Publication Date
CN101821866A CN101821866A (zh) 2010-09-01
CN101821866B true CN101821866B (zh) 2012-05-23

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CN2008801107526A Expired - Fee Related CN101821866B (zh) 2007-10-08 2008-09-09 具有粘接的半导体波长转换器的发光二极管

Country Status (7)

Country Link
US (1) US20100283074A1 (enExample)
EP (1) EP2206164A2 (enExample)
JP (1) JP2010541295A (enExample)
KR (1) KR20100077191A (enExample)
CN (1) CN101821866B (enExample)
TW (1) TW200924249A (enExample)
WO (1) WO2009048704A2 (enExample)

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Also Published As

Publication number Publication date
WO2009048704A3 (en) 2009-05-28
CN101821866A (zh) 2010-09-01
KR20100077191A (ko) 2010-07-07
EP2206164A2 (en) 2010-07-14
TW200924249A (en) 2009-06-01
WO2009048704A2 (en) 2009-04-16
JP2010541295A (ja) 2010-12-24
US20100283074A1 (en) 2010-11-11

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