CN101821866B - 具有粘接的半导体波长转换器的发光二极管 - Google Patents

具有粘接的半导体波长转换器的发光二极管 Download PDF

Info

Publication number
CN101821866B
CN101821866B CN2008801107526A CN200880110752A CN101821866B CN 101821866 B CN101821866 B CN 101821866B CN 2008801107526 A CN2008801107526 A CN 2008801107526A CN 200880110752 A CN200880110752 A CN 200880110752A CN 101821866 B CN101821866 B CN 101821866B
Authority
CN
China
Prior art keywords
led
textured surface
wavelength converter
converter
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801107526A
Other languages
English (en)
Chinese (zh)
Other versions
CN101821866A (zh
Inventor
托米·W·凯利
迈克尔·A·哈斯
凯瑟琳·A·莱瑟达勒
特里·L·史密斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101821866A publication Critical patent/CN101821866A/zh
Application granted granted Critical
Publication of CN101821866B publication Critical patent/CN101821866B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Device Packages (AREA)
CN2008801107526A 2007-10-08 2008-09-09 具有粘接的半导体波长转换器的发光二极管 Expired - Fee Related CN101821866B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08
US60/978,304 2007-10-08
PCT/US2008/075710 WO2009048704A2 (en) 2007-10-08 2008-09-09 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

Publication Number Publication Date
CN101821866A CN101821866A (zh) 2010-09-01
CN101821866B true CN101821866B (zh) 2012-05-23

Family

ID=40549799

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801107526A Expired - Fee Related CN101821866B (zh) 2007-10-08 2008-09-09 具有粘接的半导体波长转换器的发光二极管

Country Status (7)

Country Link
US (1) US20100283074A1 (enExample)
EP (1) EP2206164A2 (enExample)
JP (1) JP2010541295A (enExample)
KR (1) KR20100077191A (enExample)
CN (1) CN101821866B (enExample)
TW (1) TW200924249A (enExample)
WO (1) WO2009048704A2 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2487535A1 (en) 2007-05-20 2012-08-15 3M Innovative Properties Company Design parameters for backlights, which have a thin hollow cavity and recycle the light
JP5336474B2 (ja) 2007-05-20 2013-11-06 スリーエム イノベイティブ プロパティズ カンパニー 半鏡面構成要素を備えたリサイクル型バックライト
KR101464795B1 (ko) 2007-05-20 2014-11-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 재순환 중공 공동형 디스플레이 백라이트
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
EP2232596A4 (en) * 2007-12-28 2011-03-02 3M Innovative Properties Co LIGHT SOURCE SUBJECT TO DOWN CONVERSION WITH UNIFORM WAVE LENGTH EMISSION
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8748911B2 (en) * 2008-07-16 2014-06-10 3M Innovative Properties Company Stable light source
CN102197554A (zh) 2008-09-04 2011-09-21 3M创新有限公司 单色光源
KR20110048580A (ko) * 2008-09-04 2011-05-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 차단 구성요소를 갖는 광원
CN102197551A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 由gan ld光泵的散热器上式ⅱ-ⅵ族mqw vcsel
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
KR20110105842A (ko) 2008-12-24 2011-09-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 파장 변환기를 갖는 광 발생 소자
DE102009020127A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
WO2010129412A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
CN102804422A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 用于与led结合使用的重发光半导体载流子器件及其制造方法
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
DE102009027977A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009048401A1 (de) * 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
WO2012164456A1 (en) * 2011-06-01 2012-12-06 Koninklijke Philips Electronics N.V. Method of attaching a light emitting device to a support substrate
DE102011122778B3 (de) * 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
KR101894025B1 (ko) * 2011-12-16 2018-09-03 엘지이노텍 주식회사 발광소자
US9054235B2 (en) 2013-01-22 2015-06-09 Micron Technology, Inc. Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
CN105074945B (zh) 2013-03-29 2018-02-02 飞利浦照明控股有限公司 包括波长转换器的发光设备
CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
DE102015105693B4 (de) 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
CN107924976B (zh) * 2015-08-17 2021-01-08 无限关节内窥镜检查公司 集成光源
US11330963B2 (en) 2015-11-16 2022-05-17 Lazurite Holdings Llc Wireless medical imaging system
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
JP6793846B6 (ja) 2017-02-15 2020-12-23 インフィニット アースロスコピー インコーポレーテッド， リミテッド ヘッドユニットと集積光源を備える光ケーブルとを備える無線医療撮像システム
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102384731B1 (ko) * 2017-10-17 2022-04-08 삼성전자주식회사 Led 장치 및 그 제조 방법
CN109037405B (zh) * 2018-07-16 2020-11-13 厦门三安光电有限公司 微发光装置及其显示器
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
CN109841710B (zh) * 2019-04-12 2020-05-15 南京大学 用于透明显示的GaN Micro-LED阵列器件及其制备方法
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
JP7071648B2 (ja) * 2019-05-16 2022-05-19 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102019115351A1 (de) 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN114303240A (zh) 2019-08-20 2022-04-08 首尔伟傲世有限公司 显示用发光元件以及具有其的显示装置
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source
GB2600429B (en) * 2020-10-28 2023-11-01 Plessey Semiconductors Ltd High colour purity LED

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
WO2007105626A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works, Ltd. 発光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP3407730B2 (ja) * 2000-11-02 2003-05-19 サンケン電気株式会社 半導体発光装置の製法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006041077A (ja) * 2004-07-26 2006-02-09 Sumitomo Chemical Co Ltd 蛍光体
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
TW200729540A (en) * 2006-01-27 2007-08-01 San-Bao Lin Improvement of brightness for light-emitting device
US20090008729A1 (en) * 2007-07-03 2009-01-08 Advanced Chip Engineering Technology Inc. Image sensor package utilizing a removable protection film and method of making the same
US7538359B2 (en) * 2007-08-16 2009-05-26 Philips Lumiled Lighting Company, Llc Backlight including side-emitting semiconductor light emitting devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
WO2007105626A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works, Ltd. 発光素子

Also Published As

Publication number Publication date
CN101821866A (zh) 2010-09-01
US20100283074A1 (en) 2010-11-11
WO2009048704A3 (en) 2009-05-28
TW200924249A (en) 2009-06-01
KR20100077191A (ko) 2010-07-07
WO2009048704A2 (en) 2009-04-16
EP2206164A2 (en) 2010-07-14
JP2010541295A (ja) 2010-12-24

Similar Documents

Publication Publication Date Title
CN101821866B (zh) 具有粘接的半导体波长转换器的发光二极管
CN103222073B (zh) 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
EP2087563B1 (en) Textured phosphor conversion layer light emitting diode
TWI414088B (zh) 發光元件及其製造方法
US7842547B2 (en) Laser lift-off of sapphire from a nitride flip-chip
US7951633B2 (en) Light emitting diode and method of making the same
CN101897038B (zh) 波长转换发光二极管及其制造方法
TWI631736B (zh) 用於形成發光裝置的方法及用於發光裝置的結構
CN103199170B (zh) 系统级光电结构及其制作方法
US20120199843A1 (en) High reflective board or substrate for leds
CN102057507A (zh) 具有分隔的波长转换材料的半导体光发射器件及其形成方法
JP2013106048A (ja) 発光装置及びこれを備えた発光装置
CN105393373A (zh) 具有光学元件和反射体的发光器件
CN102804422A (zh) 用于与led结合使用的重发光半导体载流子器件及其制造方法
CN106299040A (zh) 一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件
CN101958374B (zh) 发光元件及其制造方法
US7791090B2 (en) GaN based LED having reduced thickness and method for making the same
TWI583025B (zh) 具雙基座之薄膜式覆晶發光二極體及其製造方法
CN107039564B (zh) 发射光的半导体器件
KR20070011041A (ko) 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법
CN103178075A (zh) 发光二极管阵列及其形成方法
Zou et al. Fabrication and characterization of high-voltage LEDs using photoresist-filled-trench technique
CN104904010B (zh) 包括滤光器和保护层的发光器件
CN103219415B (zh) 光电半导体装置及其制造方法
KR20210027943A (ko) 반도체 소자

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523

Termination date: 20130909