TW200924249A - Light emitting diode with bonded semiconductor wavelength converter - Google Patents

Light emitting diode with bonded semiconductor wavelength converter Download PDF

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Publication number
TW200924249A
TW200924249A TW097137549A TW97137549A TW200924249A TW 200924249 A TW200924249 A TW 200924249A TW 097137549 A TW097137549 A TW 097137549A TW 97137549 A TW97137549 A TW 97137549A TW 200924249 A TW200924249 A TW 200924249A
Authority
TW
Taiwan
Prior art keywords
led
wavelength converter
textured surface
wafer
converter
Prior art date
Application number
TW097137549A
Other languages
English (en)
Chinese (zh)
Inventor
Tommie Wilson Kelley
Catherine Anne Leatherdale
Michael Albert Haase
Terry Lee Smith
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200924249A publication Critical patent/TW200924249A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Device Packages (AREA)
TW097137549A 2007-10-08 2008-09-30 Light emitting diode with bonded semiconductor wavelength converter TW200924249A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08

Publications (1)

Publication Number Publication Date
TW200924249A true TW200924249A (en) 2009-06-01

Family

ID=40549799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137549A TW200924249A (en) 2007-10-08 2008-09-30 Light emitting diode with bonded semiconductor wavelength converter

Country Status (7)

Country Link
US (1) US20100283074A1 (enExample)
EP (1) EP2206164A2 (enExample)
JP (1) JP2010541295A (enExample)
KR (1) KR20100077191A (enExample)
CN (1) CN101821866B (enExample)
TW (1) TW200924249A (enExample)
WO (1) WO2009048704A2 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681056B (zh) 2007-05-20 2013-03-27 3M创新有限公司 中空光循环腔型显示器背光源
CN101681057B (zh) 2007-05-20 2012-07-04 3M创新有限公司 光循环型薄壁中空腔体背光源
WO2008144644A2 (en) 2007-05-20 2008-11-27 3M Innovative Properties Company Semi-specular components in hollow cavity light recycling backlights
KR20100097205A (ko) * 2007-12-10 2010-09-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드
WO2009085594A2 (en) * 2007-12-28 2009-07-09 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8748911B2 (en) * 2008-07-16 2014-06-10 3M Innovative Properties Company Stable light source
EP2335296A2 (en) * 2008-09-04 2011-06-22 3M Innovative Properties Company Light source having light blocking components
US8488641B2 (en) * 2008-09-04 2013-07-16 3M Innovative Properties Company II-VI MQW VSEL on a heat sink optically pumped by a GaN LD
WO2010027581A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
CN102318088A (zh) 2008-12-24 2012-01-11 3M创新有限公司 制备双面波长转换器和使用所述双面波长转换器的光产生装置的方法
DE102009020127A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
CN102804422A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 用于与led结合使用的重发光半导体载流子器件及其制造方法
CN102804411A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 利用铟耗尽机理在含铟衬底上生长的半导体器件
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
DE102009027977A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
WO2012164456A1 (en) * 2011-06-01 2012-12-06 Koninklijke Philips Electronics N.V. Method of attaching a light emitting device to a support substrate
DE102011122778B3 (de) 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
KR101894025B1 (ko) * 2011-12-16 2018-09-03 엘지이노텍 주식회사 발광소자
US9054235B2 (en) 2013-01-22 2015-06-09 Micron Technology, Inc. Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
EP2979310B1 (en) 2013-03-29 2019-07-03 Signify Holding B.V. Light emitting device comprising wavelength converter
CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
DE102015105693B4 (de) 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
EP3338310A4 (en) * 2015-08-17 2019-02-27 Infinite Arthroscopy Inc, Limited Light source
US11330963B2 (en) 2015-11-16 2022-05-17 Lazurite Holdings Llc Wireless medical imaging system
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
CN114680800A (zh) 2017-02-15 2022-07-01 青金石控股有限责任公司 包括头单元和包含集成光源的光缆的无线医学成像系统
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102384731B1 (ko) * 2017-10-17 2022-04-08 삼성전자주식회사 Led 장치 및 그 제조 방법
CN112086548A (zh) * 2018-07-16 2020-12-15 厦门三安光电有限公司 微发光装置及其显示器
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN109841710B (zh) * 2019-04-12 2020-05-15 南京大学 用于透明显示的GaN Micro-LED阵列器件及其制备方法
JP7071648B2 (ja) * 2019-05-16 2022-05-19 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN114303240A (zh) 2019-08-20 2022-04-08 首尔伟傲世有限公司 显示用发光元件以及具有其的显示装置
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source
GB2600429B (en) * 2020-10-28 2023-11-01 Plessey Semiconductors Ltd High colour purity LED

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
EP1234344B1 (en) * 1999-12-03 2020-12-02 Cree, Inc. Enhanced light extraction in leds through the use of internal and external optical elements
JP3407730B2 (ja) * 2000-11-02 2003-05-19 サンケン電気株式会社 半導体発光装置の製法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006041077A (ja) * 2004-07-26 2006-02-09 Sumitomo Chemical Co Ltd 蛍光体
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
TW200729540A (en) * 2006-01-27 2007-08-01 San-Bao Lin Improvement of brightness for light-emitting device
US8049233B2 (en) * 2006-03-10 2011-11-01 Panasonic Electric Works Co., Ltd. Light-emitting device
US20090008729A1 (en) * 2007-07-03 2009-01-08 Advanced Chip Engineering Technology Inc. Image sensor package utilizing a removable protection film and method of making the same
US7538359B2 (en) * 2007-08-16 2009-05-26 Philips Lumiled Lighting Company, Llc Backlight including side-emitting semiconductor light emitting devices

Also Published As

Publication number Publication date
KR20100077191A (ko) 2010-07-07
EP2206164A2 (en) 2010-07-14
US20100283074A1 (en) 2010-11-11
CN101821866A (zh) 2010-09-01
WO2009048704A3 (en) 2009-05-28
CN101821866B (zh) 2012-05-23
JP2010541295A (ja) 2010-12-24
WO2009048704A2 (en) 2009-04-16

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