JP2010535356A - 微小共振装置およびその製造方法 - Google Patents
微小共振装置およびその製造方法 Download PDFInfo
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- JP2010535356A JP2010535356A JP2010519239A JP2010519239A JP2010535356A JP 2010535356 A JP2010535356 A JP 2010535356A JP 2010519239 A JP2010519239 A JP 2010519239A JP 2010519239 A JP2010519239 A JP 2010519239A JP 2010535356 A JP2010535356 A JP 2010535356A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
- H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (10)
- 上面層(204)を有する基板(206)と、
前記基板(206)内に埋込まれ、前記基板の前記上面層に隣接して配置される少なくとも1つの導波路(214、216)と、
上層(218)、中間層(222)、下層(220)、周辺領域、および周囲被膜(224)を有する微小共振器とを備え、
前記微小共振器の前記下層は前記基板の前記上面層に接続されて前記上面層と電気通信を行い、前記微小共振器が配置されることによって、前記周辺領域の少なくとも一部が少なくとも1つの前記導波路の上方に配置され、
前記周囲被膜は前記周囲面の少なくとも一部を覆い、前記微小共振器の前記上層、中間層、および下層に比べて比較的低い屈折率を有することを特徴とする微小共振装置(200)。 - 前記微小共振器の前記上面層上に配置される第1の電極(208)と、
前記基板の前記上面層上で前記微小共振器に隣接して配置される少なくとも1つの第2の電極(212)とをさらに備えることを特徴とする請求項1に記載の装置。 - 前記中間層内に少なくとも1つの量子井戸(301−303)をさらに備えることを特徴とする請求項1に記載の装置。
- 前記上層(218)はp型半導体をさらに備え、
前記下層(222)はn型半導体をさらに備えることを特徴とする請求項1に記載の装置。 - 前記周囲被膜(224)はリン系半導体を更に備え、前記微小共振器に対するクラッド層として機能することを特徴とする請求項1に記載の装置。
- 前記微小共振器は、マイクロディスク(102)およびマイクロリング(402)のうち1つをさらに備えることを特徴とする請求項1に記載の装置。
- 上層(218)と、
下層(220)と、
少なくとも1つの量子井戸(301−303)を有し、前記上層および前記下層間に配置される中間層(222)と、
前記上層、前記下層、および前記中間層の周囲面の少なくとも一部を覆い、前記上層、前記下層、および前記中間層に比べて比較的低い屈折率を有する周囲被膜(224)とを備えることを特徴とする微小共振器。 - 前記上層(218)はp型半導体をさらに備え、
前記下層(220)はn型半導体をさらに備えることを特徴とする請求項7に記載の微小共振器。 - 前記周囲被膜(224)はリン系半導体をさらに備え、クラッド層として機能することを特徴とする請求項7に記載の微小共振器。
- マイクロディスク(202)およびマイクロリング(402)のうち1つをさらに備えることを特徴とする請求項7に記載の微小共振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/888,015 US7764852B2 (en) | 2007-07-30 | 2007-07-30 | Microresonantor systems and methods of fabricating the same |
PCT/US2008/009225 WO2009017770A2 (en) | 2007-07-30 | 2008-07-30 | Microresonantor systems and methods of fabricating the same |
Publications (1)
Publication Number | Publication Date |
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JP2010535356A true JP2010535356A (ja) | 2010-11-18 |
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ID=40305132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010519239A Pending JP2010535356A (ja) | 2007-07-30 | 2008-07-30 | 微小共振装置およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7764852B2 (ja) |
JP (1) | JP2010535356A (ja) |
KR (1) | KR101516690B1 (ja) |
CN (1) | CN101772867B (ja) |
DE (1) | DE112008002059B4 (ja) |
WO (1) | WO2009017770A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204706A (ja) * | 2011-03-28 | 2012-10-22 | Toshiba Corp | 受光素子、その製造方法、および光送受信ユニット |
JP2013191704A (ja) * | 2012-03-13 | 2013-09-26 | Toshiba Corp | 受光素子 |
JP2013205786A (ja) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | 光送受信システムおよび光受光ユニット |
JP2015506488A (ja) * | 2011-12-20 | 2015-03-02 | オラクル・インターナショナル・コーポレイション | 反転された基板レスチップ上の光学装置 |
JP2022061930A (ja) * | 2020-10-07 | 2022-04-19 | ジュニパー ネットワークス, インコーポレーテッド | ハイブリッドフォトニックリング変調器 |
Families Citing this family (14)
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US7561761B2 (en) * | 2007-01-03 | 2009-07-14 | Hewlett-Packard Development Company, L.P. | Photonic systems and methods for encoding data in carrier electromagnetic waves |
US8019185B2 (en) * | 2008-02-14 | 2011-09-13 | Hrl Laboratories, Llc | Unit-cell array optical signal processor |
US9190560B2 (en) | 2010-05-18 | 2015-11-17 | Agency For Science Technology And Research | Method of forming a light emitting diode structure and a light diode structure |
JP5209010B2 (ja) * | 2010-09-16 | 2013-06-12 | 株式会社東芝 | 半導体レーザ |
CN103779769B (zh) * | 2014-01-23 | 2016-03-02 | 北京大学 | 一种单模半微盘谐振腔 |
JP2015184375A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | 光配線デバイスおよびその製造方法 |
US9450597B1 (en) | 2014-05-02 | 2016-09-20 | Hrl Laboratories, Llc | Hardware based compressive sampling ADC architecture for non-uniform sampled signal recovery |
US11444696B2 (en) * | 2014-07-08 | 2022-09-13 | PhotonIC International Pte. Ltd. | Micro-disc modulator, silicon photonic device and optoelectronic communication apparatus using the same |
KR102384228B1 (ko) * | 2015-09-30 | 2022-04-07 | 삼성전자주식회사 | 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자 |
WO2017200620A2 (en) * | 2016-02-29 | 2017-11-23 | Stc.Unm | Ring laser integrated with silicon-on-insulator waveguide |
KR101914274B1 (ko) * | 2016-12-16 | 2018-11-01 | 재단법인 대구경북과학기술원 | 단일 방향 발진 마이크로 디스크 |
CN110994358B (zh) * | 2019-12-23 | 2021-04-20 | 华中科技大学 | 电泵浦的切向偏振矢量光束激光器 |
DE102020123477A1 (de) * | 2020-09-09 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Umgebungssensor, messvorrichtung und verfahren zum betreiben einer messvorrichtung |
CN114552349A (zh) * | 2020-11-24 | 2022-05-27 | 中国科学技术大学 | 椭圆柱形光学微谐振腔及椭圆柱形光学微谐振腔制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204706A (ja) * | 2011-03-28 | 2012-10-22 | Toshiba Corp | 受光素子、その製造方法、および光送受信ユニット |
JP2015506488A (ja) * | 2011-12-20 | 2015-03-02 | オラクル・インターナショナル・コーポレイション | 反転された基板レスチップ上の光学装置 |
JP2013191704A (ja) * | 2012-03-13 | 2013-09-26 | Toshiba Corp | 受光素子 |
JP2013205786A (ja) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | 光送受信システムおよび光受光ユニット |
US9008473B2 (en) | 2012-03-29 | 2015-04-14 | Kabushiki Kaisha Toshiba | Optical transmission-reception system and light-receiving unit |
JP2022061930A (ja) * | 2020-10-07 | 2022-04-19 | ジュニパー ネットワークス, インコーポレーテッド | ハイブリッドフォトニックリング変調器 |
US11914264B2 (en) | 2020-10-07 | 2024-02-27 | Openlight Photonics, Inc. | Hybrid photonic ring modulators |
JP7480032B2 (ja) | 2020-10-07 | 2024-05-09 | オープンライト フォトニクス インコーポレイテッド | ハイブリッドフォトニックリング変調器 |
Also Published As
Publication number | Publication date |
---|---|
US7764852B2 (en) | 2010-07-27 |
WO2009017770A2 (en) | 2009-02-05 |
DE112008002059T5 (de) | 2010-09-09 |
KR20100051833A (ko) | 2010-05-18 |
DE112008002059B4 (de) | 2013-11-14 |
US20090034905A1 (en) | 2009-02-05 |
CN101772867B (zh) | 2012-07-25 |
KR101516690B1 (ko) | 2015-05-04 |
WO2009017770A3 (en) | 2009-04-02 |
CN101772867A (zh) | 2010-07-07 |
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