JP2010519681A5 - - Google Patents

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Publication number
JP2010519681A5
JP2010519681A5 JP2009549482A JP2009549482A JP2010519681A5 JP 2010519681 A5 JP2010519681 A5 JP 2010519681A5 JP 2009549482 A JP2009549482 A JP 2009549482A JP 2009549482 A JP2009549482 A JP 2009549482A JP 2010519681 A5 JP2010519681 A5 JP 2010519681A5
Authority
JP
Japan
Prior art keywords
electrode
mount
opening
movable mount
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009549482A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010519681A (ja
Filing date
Publication date
Priority claimed from GBGB0703044.8A external-priority patent/GB0703044D0/en
Application filed filed Critical
Publication of JP2010519681A publication Critical patent/JP2010519681A/ja
Publication of JP2010519681A5 publication Critical patent/JP2010519681A5/ja
Pending legal-status Critical Current

Links

JP2009549482A 2007-02-16 2008-02-15 可動マウントに取り付けられた電極を備えるイオンビーム加速装置 Pending JP2010519681A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0703044.8A GB0703044D0 (en) 2007-02-16 2007-02-16 Apparatus
PCT/GB2008/050098 WO2008099218A1 (en) 2007-02-16 2008-02-15 Ion beam accelerating apparatus with electrodes mounted in a movable mount

Publications (2)

Publication Number Publication Date
JP2010519681A JP2010519681A (ja) 2010-06-03
JP2010519681A5 true JP2010519681A5 (enExample) 2011-03-31

Family

ID=37908761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009549482A Pending JP2010519681A (ja) 2007-02-16 2008-02-15 可動マウントに取り付けられた電極を備えるイオンビーム加速装置

Country Status (6)

Country Link
US (1) US20100044579A1 (enExample)
EP (1) EP2111630A1 (enExample)
JP (1) JP2010519681A (enExample)
CN (1) CN101542675A (enExample)
GB (1) GB0703044D0 (enExample)
WO (1) WO2008099218A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105154856B (zh) 2008-08-04 2018-08-10 北美Agc平板玻璃公司 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
DE102009048400A1 (de) * 2009-10-06 2011-04-14 Siemens Aktiengesellschaft HF-Resonatorkavität und Beschleuniger
JP2013098003A (ja) * 2011-10-31 2013-05-20 Nissin Ion Equipment Co Ltd イオンビーム引出し用電極およびこれを備えたイオン源
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
CN107615888B (zh) 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
SG11201805171YA (en) * 2015-12-18 2018-07-30 Agc Flat Glass Na Inc Hollow cathode ion source and method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
US9807864B1 (en) * 2016-08-04 2017-10-31 Varian Semiconductor Equipment Associates Inc. Electrode, accelerator column and ion implantation apparatus including same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149055A (en) * 1977-05-02 1979-04-10 Hughes Aircraft Company Focusing ion accelerator
JPS6043620B2 (ja) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 マイクロ波イオン源
JPS59207553A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 荷電粒子線軸合せ装置
JPH0746588B2 (ja) * 1986-09-09 1995-05-17 日本電信電話株式会社 マイクロ波イオン源
JPH01204341A (ja) * 1988-02-08 1989-08-16 Japan Steel Works Ltd:The イオンビーム装置
US4933551A (en) * 1989-06-05 1990-06-12 The United State Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Reversal electron attachment ionizer for detection of trace species
US5365070A (en) * 1992-04-29 1994-11-15 The Regents Of The University Of California Negative ion beam injection apparatus with magnetic shield and electron removal means
JPH0668806A (ja) * 1992-08-21 1994-03-11 Japan Steel Works Ltd:The イオン源
US5608773A (en) * 1993-11-30 1997-03-04 Canon Kabushiki Kaisha Mask holding device, and an exposure apparatus and a device manufacturing method using the device
JP3243168B2 (ja) * 1996-02-06 2002-01-07 キヤノン株式会社 原版保持装置およびこれを用いた露光装置
DE19851097A1 (de) * 1997-11-05 1999-05-06 Ims Ionen Mikrofab Syst Mechanisch einstellbare, elektrostatische Linse
JPH11283552A (ja) * 1998-03-31 1999-10-15 Tadamoto Tamai イオン注入装置、イオン注入方法、イオンビーム源、及び可変スリット機構
US6458723B1 (en) * 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
TW521295B (en) * 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
US6838677B2 (en) * 2000-11-20 2005-01-04 Varian Semiconductor Equipment Associates, Inc. Extraction and deceleration of low energy beam with low beam divergence
US6768120B2 (en) * 2001-08-31 2004-07-27 The Regents Of The University Of California Focused electron and ion beam systems
US6936981B2 (en) * 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
JP3858092B2 (ja) 2002-11-14 2006-12-13 独立行政法人航空宇宙技術研究所 イオン抽出装置
US7145157B2 (en) * 2003-09-11 2006-12-05 Applied Materials, Inc. Kinematic ion implanter electrode mounting
JP4316394B2 (ja) * 2004-01-21 2009-08-19 株式会社東芝 荷電ビーム装置
JP5068928B2 (ja) * 2004-11-30 2012-11-07 株式会社Ｓｅｎ 低エネルギービーム増大化方法及びビーム照射装置
US7279687B2 (en) * 2005-08-26 2007-10-09 Varian Semiconductor Equipment Associates, Inc. Technique for implementing a variable aperture lens in an ion implanter
WO2008000836A2 (en) 2006-06-30 2008-01-03 Nordiko Technical Services Limited Apparatus for accelerating an ion beam

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