JP2010517924A - シリコン精製装置 - Google Patents
シリコン精製装置 Download PDFInfo
- Publication number
- JP2010517924A JP2010517924A JP2009549842A JP2009549842A JP2010517924A JP 2010517924 A JP2010517924 A JP 2010517924A JP 2009549842 A JP2009549842 A JP 2009549842A JP 2009549842 A JP2009549842 A JP 2009549842A JP 2010517924 A JP2010517924 A JP 2010517924A
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- Prior art keywords
- furnace
- silicon
- refractory material
- silicon material
- protective element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title description 88
- 239000010703 silicon Substances 0.000 title description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 87
- 238000000746 purification Methods 0.000 title description 19
- 239000011819 refractory material Substances 0.000 claims abstract description 29
- 238000004804 winding Methods 0.000 claims abstract description 26
- 239000002210 silicon-based material Substances 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 230000006698 induction Effects 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims description 23
- 230000007123 defense Effects 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 239000012809 cooling fluid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
- C03B5/225—Refining
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
- C03B5/021—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by induction heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (13)
- シリコン材料(s)を精製する装置において、
熱伝導性が良好な少なくとも1種類の第1耐火材料を用いて形成される少なくとも1個の底部(20)を備える炉(5)と、
前記底部を冷却するための手段(26、28)と、
前記炉と前記シリコン材料との間に配置され、熱伝導性が良好でない少なくとも1種類の第2耐火材料を用いて形成される防御要素(30)と、
前記底部の内側または下側に配置された巻線(23)を備えており、前記シリコン材料を誘導することにより前記底部を加熱するための手段(23、24)と
を備えることを特徴とする装置。 - 前記底部(20)は、内側に冷却用流体が流れるパイプ(26)に横断されており、該パイプは、前記第2耐火材料、第3耐火材料、または良好な導電性材料で形成されている
ことを特徴とする請求項1に記載の装置。 - 前記巻線(23)は、冷却用流体が内部を流れる中空管であることを特徴とする請求項1又は2に記載の装置。
- 前記防御要素(30)は、少なくとも前記第2耐火材料を含む粉体であり、表面(32)がポケット型の形状をしており、前記材料(s)を受け取ることを特徴とする請求項1から3のいずれか1つに記載の装置。
- 前記防御要素(30)は、少なくとも前記表面(32)の部位に、炭素をさらに含むことを特徴とする請求項4に記載の装置。
- 前記底部(20)の前記シリコン材料(s)側表面(21)は、丸みを帯びた表面形状を有していることを特徴とする請求項1から5のいずれか1つに記載の装置。
- 前記防御要素(30)は、前記丸みを帯びた表面(21)を覆う部分を備えており、該部分の厚みは10%以内の範囲で一定であることを特徴とする請求項6に記載の装置。
- 前記巻線(23)は、前記丸みを帯びた表面(21)の形状に対応することを特徴とする請求項6又は7に記載の装置。
- 前記シリコン材料(s)の自由表面に向けられたプラズマトーチ(35)をさらに備えることを特徴とする請求項1から8のいずれか1つに記載の装置。
- 前記炉(5)は、前記底部(20)の外周に金属外壁(10)を備えており、前記装置は、該外壁を冷却するための手段(12、14)を備えることを特徴とする請求項1から9のいずれか1つに記載の装置。
- 前記外壁(10)は、冷却用流体を流す空洞(12)を備えた単一金属部であることを特徴とする請求項10に記載の装置。
- シリコン材料(s)を精製するための方法において、
熱伝導性が良好な少なくとも1種類の第1耐火材料を用いて形成される少なくとも1個の底部(20)を備える炉(5)を準備するステップと、
該炉に、熱伝導性が良好でない少なくとも1種類の第2耐火材料を用いて形成される防御要素(30)を配置するステップと、
該防御要素上に前記シリコン材料を載置するステップと、
前記底部を冷却するステップと、
前記底部の内側または下側に配置された巻線(23)を備える誘導加熱手段(23、24)により前記シリコン材料を加熱するステップと
を備えることを特徴とする方法。 - 前記防御要素(30)は、少なくとも前記第2耐火材料を含む粉体であり、前記方法は、前記シリコン材料(s)を受け取るポケット型表面(32)を形成することにより、前記炉(5)に前記粉体を分散させるステップを含むことを特徴とする請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0753256 | 2007-02-14 | ||
FR0753256A FR2912397B1 (fr) | 2007-02-14 | 2007-02-14 | Installation d'affinage de silicium. |
PCT/FR2008/050220 WO2008104702A2 (fr) | 2007-02-14 | 2008-02-12 | Installation d'affinage de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010517924A true JP2010517924A (ja) | 2010-05-27 |
JP5415285B2 JP5415285B2 (ja) | 2014-02-12 |
Family
ID=38543853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009549842A Expired - Fee Related JP5415285B2 (ja) | 2007-02-14 | 2008-02-12 | シリコン精製装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20130133373A1 (ja) |
EP (1) | EP2118005A2 (ja) |
JP (1) | JP5415285B2 (ja) |
CN (1) | CN101646621B (ja) |
AU (1) | AU2008220638B2 (ja) |
FR (1) | FR2912397B1 (ja) |
WO (1) | WO2008104702A2 (ja) |
ZA (1) | ZA200906337B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981740B1 (fr) * | 2011-10-20 | 2018-03-23 | Francewafer | Installation de purification d'un materiau |
CN105276980B (zh) * | 2014-05-28 | 2017-11-03 | 国核华清(北京)核电技术研发中心有限公司 | 陶瓷坩埚 |
US10069535B2 (en) | 2016-12-08 | 2018-09-04 | At&T Intellectual Property I, L.P. | Apparatus and methods for launching electromagnetic waves having a certain electric field structure |
US11912608B2 (en) | 2019-10-01 | 2024-02-27 | Owens-Brockway Glass Container Inc. | Glass manufacturing |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04228414A (ja) * | 1990-05-30 | 1992-08-18 | Kawasaki Steel Corp | シリコン精製方法及び装置 |
JPH09142823A (ja) * | 1995-11-29 | 1997-06-03 | Kawasaki Steel Corp | 金属シリコンの精製方法および精製装置 |
JPH10182133A (ja) * | 1996-12-26 | 1998-07-07 | Kawasaki Steel Corp | シリコン精製方法 |
JP2000515235A (ja) * | 1996-07-25 | 2000-11-14 | コミツサリア タ レネルジー アトミーク | 冷ルツボ内でガラスを溶融させるための誘導炉 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2009459A1 (de) * | 1970-02-28 | 1971-09-09 | Consortium Elektrochem Ind | Verfahren zur Herstellung von Sihciumformkorpern |
DE3732073A1 (de) * | 1987-09-23 | 1989-04-06 | Siemens Ag | Hochreine innenauskleidung fuer einen elektroniederschachtofen |
DE19962449C2 (de) * | 1999-12-22 | 2003-09-25 | Heraeus Quarzglas | Quarzglastiegel und Verfahren für seine Herstellung |
FR2871151B1 (fr) * | 2004-06-07 | 2006-08-11 | Centre Nat Rech Scient Cnrse | Installation d'affinage de silicium |
-
2007
- 2007-02-14 FR FR0753256A patent/FR2912397B1/fr not_active Expired - Fee Related
-
2008
- 2008-02-12 US US12/527,036 patent/US20130133373A1/en not_active Abandoned
- 2008-02-12 CN CN2008800050944A patent/CN101646621B/zh not_active Expired - Fee Related
- 2008-02-12 AU AU2008220638A patent/AU2008220638B2/en not_active Ceased
- 2008-02-12 WO PCT/FR2008/050220 patent/WO2008104702A2/fr active Application Filing
- 2008-02-12 JP JP2009549842A patent/JP5415285B2/ja not_active Expired - Fee Related
- 2008-02-12 EP EP08762072A patent/EP2118005A2/fr not_active Withdrawn
-
2009
- 2009-09-11 ZA ZA2009/06337A patent/ZA200906337B/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04228414A (ja) * | 1990-05-30 | 1992-08-18 | Kawasaki Steel Corp | シリコン精製方法及び装置 |
JPH09142823A (ja) * | 1995-11-29 | 1997-06-03 | Kawasaki Steel Corp | 金属シリコンの精製方法および精製装置 |
JP2000515235A (ja) * | 1996-07-25 | 2000-11-14 | コミツサリア タ レネルジー アトミーク | 冷ルツボ内でガラスを溶融させるための誘導炉 |
JPH10182133A (ja) * | 1996-12-26 | 1998-07-07 | Kawasaki Steel Corp | シリコン精製方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2008220638B2 (en) | 2012-10-25 |
FR2912397B1 (fr) | 2009-05-08 |
CN101646621B (zh) | 2013-11-06 |
ZA200906337B (en) | 2010-11-24 |
JP5415285B2 (ja) | 2014-02-12 |
FR2912397A1 (fr) | 2008-08-15 |
CN101646621A (zh) | 2010-02-10 |
AU2008220638A1 (en) | 2008-09-04 |
WO2008104702A3 (fr) | 2008-11-06 |
US20130133373A1 (en) | 2013-05-30 |
WO2008104702A2 (fr) | 2008-09-04 |
EP2118005A2 (fr) | 2009-11-18 |
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