JP5415285B2 - シリコン精製装置 - Google Patents
シリコン精製装置 Download PDFInfo
- Publication number
- JP5415285B2 JP5415285B2 JP2009549842A JP2009549842A JP5415285B2 JP 5415285 B2 JP5415285 B2 JP 5415285B2 JP 2009549842 A JP2009549842 A JP 2009549842A JP 2009549842 A JP2009549842 A JP 2009549842A JP 5415285 B2 JP5415285 B2 JP 5415285B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- furnace
- refractory material
- bottom portion
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title description 88
- 239000010703 silicon Substances 0.000 title description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 87
- 238000000746 purification Methods 0.000 title description 19
- 239000011819 refractory material Substances 0.000 claims description 25
- 238000004804 winding Methods 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000002210 silicon-based material Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000006698 induction Effects 0.000 claims description 14
- 239000012809 cooling fluid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000007123 defense Effects 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
- C03B5/225—Refining
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
- C03B5/021—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by induction heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
Claims (8)
- シリコン材料を精製する装置において、
炭化ケイ素を有する耐火セメントを含んでおり、熱伝導性が良好な少なくとも1種類の第1耐火材料を用いて形成され、上表面が平面である少なくとも1個の底部を備える炉と、
前記底部を冷却するための手段と、
前記底部と前記シリコン材料との間に配置され、アルミナ、石英、ジルコニア若しくはシリカ又はそれらの材料のうちの2種以上で構成される混合物を含んでおり熱伝導性が良好でない少なくとも1種類の第2耐火材料を含む粉体から作られる防御要素とを備え、
前記防御要素は表面がポケット型形状をしており、前記シリコン材料を受け取るようにしてあり、
前記底部の内部または下側に配置された巻線を備えており、電流を誘導することにより前記シリコン材料を加熱するための手段と
を備えることを特徴とする装置。 - 前記底部は、内側に冷却用流体が流れるパイプに横断されており、該パイプは、前記第2耐火材料、炭化ケイ素系材料を含む第3耐火材料、または良好な導電性材料で形成されている
ことを特徴とする請求項1に記載の装置。 - 前記巻線は、冷却用流体が内部を流れる中空管である
ことを特徴とする請求項1又は2に記載の装置。 - 前記防御要素は、少なくとも前記表面の部位に、炭素をさらに含む
ことを特徴とする請求項1に記載の装置。 - 前記シリコン材料の自由表面に向けられたプラズマトーチをさらに備える
ことを特徴とする請求項1に記載の装置。 - 前記炉は、前記底部の外周に金属外壁を備えており、
該外壁を冷却するための手段を備える
ことを特徴とする請求項1に記載の装置。 - 前記外壁は、冷却用流体を流す空洞を備えた単一金属部である
ことを特徴とする請求項6に記載の装置。 - シリコン材料を精製するための方法において、
炭化ケイ素を有する耐火セメントを含んでおり、熱伝導性が良好な少なくとも1種類の第1耐火材料を用いて形成され、上表面が平面である少なくとも1個の底部を備える炉を準備するステップと、
該炉に、アルミナ、石英、ジルコニア若しくはシリカ又はそれらの材料のうちの2種以上で構成される混合物を含んでおり熱伝導性が良好でない少なくとも1種類の第2耐火材料を含む粉体から作られる防御要素を配置するステップと、
前記シリコン材料を受け取るポケット型表面を形成することにより、前記炉に前記粉体を分散させるステップと、
前記防御要素上に前記シリコン材料を載置するステップと、
前記底部を冷却するステップと、
前記底部の内部または下側に配置された巻線を備える誘導加熱手段により前記シリコン材料を加熱するステップと
を備えることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0753256 | 2007-02-14 | ||
FR0753256A FR2912397B1 (fr) | 2007-02-14 | 2007-02-14 | Installation d'affinage de silicium. |
PCT/FR2008/050220 WO2008104702A2 (fr) | 2007-02-14 | 2008-02-12 | Installation d'affinage de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010517924A JP2010517924A (ja) | 2010-05-27 |
JP5415285B2 true JP5415285B2 (ja) | 2014-02-12 |
Family
ID=38543853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009549842A Expired - Fee Related JP5415285B2 (ja) | 2007-02-14 | 2008-02-12 | シリコン精製装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20130133373A1 (ja) |
EP (1) | EP2118005A2 (ja) |
JP (1) | JP5415285B2 (ja) |
CN (1) | CN101646621B (ja) |
AU (1) | AU2008220638B2 (ja) |
FR (1) | FR2912397B1 (ja) |
WO (1) | WO2008104702A2 (ja) |
ZA (1) | ZA200906337B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981740B1 (fr) * | 2011-10-20 | 2018-03-23 | Francewafer | Installation de purification d'un materiau |
CN105276980B (zh) * | 2014-05-28 | 2017-11-03 | 国核华清(北京)核电技术研发中心有限公司 | 陶瓷坩埚 |
US10069535B2 (en) | 2016-12-08 | 2018-09-04 | At&T Intellectual Property I, L.P. | Apparatus and methods for launching electromagnetic waves having a certain electric field structure |
US11912608B2 (en) | 2019-10-01 | 2024-02-27 | Owens-Brockway Glass Container Inc. | Glass manufacturing |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2009459A1 (de) * | 1970-02-28 | 1971-09-09 | Consortium Elektrochem Ind | Verfahren zur Herstellung von Sihciumformkorpern |
DE3732073A1 (de) * | 1987-09-23 | 1989-04-06 | Siemens Ag | Hochreine innenauskleidung fuer einen elektroniederschachtofen |
JP3205352B2 (ja) * | 1990-05-30 | 2001-09-04 | 川崎製鉄株式会社 | シリコン精製方法及び装置 |
JPH09142823A (ja) * | 1995-11-29 | 1997-06-03 | Kawasaki Steel Corp | 金属シリコンの精製方法および精製装置 |
FR2751738B1 (fr) * | 1996-07-25 | 1998-08-28 | Commissariat Energie Atomique | Four de fusion par induction directe en creuset froid |
JPH10182133A (ja) * | 1996-12-26 | 1998-07-07 | Kawasaki Steel Corp | シリコン精製方法 |
DE19962449C2 (de) * | 1999-12-22 | 2003-09-25 | Heraeus Quarzglas | Quarzglastiegel und Verfahren für seine Herstellung |
FR2871151B1 (fr) * | 2004-06-07 | 2006-08-11 | Centre Nat Rech Scient Cnrse | Installation d'affinage de silicium |
-
2007
- 2007-02-14 FR FR0753256A patent/FR2912397B1/fr not_active Expired - Fee Related
-
2008
- 2008-02-12 EP EP08762072A patent/EP2118005A2/fr not_active Withdrawn
- 2008-02-12 AU AU2008220638A patent/AU2008220638B2/en not_active Ceased
- 2008-02-12 JP JP2009549842A patent/JP5415285B2/ja not_active Expired - Fee Related
- 2008-02-12 CN CN2008800050944A patent/CN101646621B/zh not_active Expired - Fee Related
- 2008-02-12 US US12/527,036 patent/US20130133373A1/en not_active Abandoned
- 2008-02-12 WO PCT/FR2008/050220 patent/WO2008104702A2/fr active Application Filing
-
2009
- 2009-09-11 ZA ZA2009/06337A patent/ZA200906337B/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2912397B1 (fr) | 2009-05-08 |
ZA200906337B (en) | 2010-11-24 |
FR2912397A1 (fr) | 2008-08-15 |
CN101646621B (zh) | 2013-11-06 |
EP2118005A2 (fr) | 2009-11-18 |
AU2008220638B2 (en) | 2012-10-25 |
US20130133373A1 (en) | 2013-05-30 |
AU2008220638A1 (en) | 2008-09-04 |
WO2008104702A2 (fr) | 2008-09-04 |
CN101646621A (zh) | 2010-02-10 |
JP2010517924A (ja) | 2010-05-27 |
WO2008104702A3 (fr) | 2008-11-06 |
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