JP2010517280A - 電子的構成部材 - Google Patents

電子的構成部材 Download PDF

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Publication number
JP2010517280A
JP2010517280A JP2009546708A JP2009546708A JP2010517280A JP 2010517280 A JP2010517280 A JP 2010517280A JP 2009546708 A JP2009546708 A JP 2009546708A JP 2009546708 A JP2009546708 A JP 2009546708A JP 2010517280 A JP2010517280 A JP 2010517280A
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JP
Japan
Prior art keywords
layer
electronic component
metal
diffusion barrier
substrate
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Pending
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JP2009546708A
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English (en)
Japanese (ja)
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JP2010517280A5 (enExample
Inventor
フィックス リヒャルト
ヴォルスト オリヴァー
マルティン アレクサンダー
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of JP2010517280A publication Critical patent/JP2010517280A/ja
Publication of JP2010517280A5 publication Critical patent/JP2010517280A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4827—Materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009546708A 2007-01-24 2008-01-09 電子的構成部材 Pending JP2010517280A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007003541A DE102007003541A1 (de) 2007-01-24 2007-01-24 Elektronisches Bauteil
PCT/EP2008/050199 WO2008090023A1 (de) 2007-01-24 2008-01-09 Elektronisches bauteil

Publications (2)

Publication Number Publication Date
JP2010517280A true JP2010517280A (ja) 2010-05-20
JP2010517280A5 JP2010517280A5 (enExample) 2013-11-21

Family

ID=39323786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009546708A Pending JP2010517280A (ja) 2007-01-24 2008-01-09 電子的構成部材

Country Status (6)

Country Link
US (1) US8242599B2 (enExample)
EP (1) EP2113131A1 (enExample)
JP (1) JP2010517280A (enExample)
CN (1) CN101589466B (enExample)
DE (1) DE102007003541A1 (enExample)
WO (1) WO2008090023A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011002854A1 (de) 2010-08-10 2012-02-16 Robert Bosch Gmbh Feldeffekt-Gassensor, Verfahren zur Herstellung eines Feldeffekt-Gassensors und Verfahren zur Detektion von Gas
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
DE102013204262A1 (de) 2013-03-12 2014-09-18 Robert Bosch Gmbh Funktionselement zum Anordnen vor dem aktiven Messbereich eines Sensorelements
DE102015106002A1 (de) * 2015-04-20 2016-10-20 Gottfried Wilhelm Leibniz Universität Hannover Elektrisches Bauteil, Konstruktionsbauteil eines technischen Gegenstands sowie Verfahren zu deren Herstellung
DE102016208970A1 (de) * 2016-05-24 2017-11-30 Robert Bosch Gmbh Verfahren zum Herstellen einer Elektromigration-resistenten kristallinen Übergangsmetall-Silizidschicht, entsprechende Schichtenfolge und Mikro-Heizer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298136A (ja) * 1986-06-18 1987-12-25 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH02181920A (ja) * 1989-01-09 1990-07-16 Hitachi Ltd 半導体集積回路装置
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法
JP2000315789A (ja) * 1999-04-30 2000-11-14 Toshiba Corp 半導体装置及びその製造方法
JP2001036083A (ja) * 1999-06-29 2001-02-09 Hyundai Electronics Ind Co Ltd ダマシン及び化学的機械的研磨工程を用いたｍｏｓトランジスタの形成方法
JP2003258121A (ja) * 2001-12-27 2003-09-12 Toshiba Corp 半導体装置及びその製造方法
JP2004022773A (ja) * 2002-06-17 2004-01-22 Nec Corp 半導体装置
JP2004111962A (ja) * 2002-09-19 2004-04-08 Samsung Electronics Co Ltd 金属ゲートパターンを有する半導体素子の製造方法
JP2005260028A (ja) * 2004-03-12 2005-09-22 Mitsubishi Electric Corp 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2096824A (en) 1981-04-09 1982-10-20 Sibbald Alastair Chemically sensitive field effect transistor
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
US6696345B2 (en) * 2002-01-07 2004-02-24 Intel Corporation Metal-gate electrode for CMOS transistor applications
US6787910B2 (en) * 2002-07-23 2004-09-07 National Chiao Tung University Schottky structure in GaAs semiconductor device
CN101019236A (zh) * 2004-07-15 2007-08-15 斯平内克半导体股份有限公司 金属源极功率晶体管及其制造方法
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
JPWO2007052335A1 (ja) * 2005-11-01 2009-04-30 株式会社日立製作所 半導体圧力センサ
US7389675B1 (en) * 2006-05-12 2008-06-24 The United States Of America As Represented By The National Aeronautics And Space Administration Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors
US7714386B2 (en) * 2006-06-09 2010-05-11 Northrop Grumman Systems Corporation Carbon nanotube field effect transistor
KR100781972B1 (ko) * 2006-09-18 2007-12-06 삼성전자주식회사 메모리 소자 및 그의 제조방법
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298136A (ja) * 1986-06-18 1987-12-25 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH02181920A (ja) * 1989-01-09 1990-07-16 Hitachi Ltd 半導体集積回路装置
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法
JP2000315789A (ja) * 1999-04-30 2000-11-14 Toshiba Corp 半導体装置及びその製造方法
JP2001036083A (ja) * 1999-06-29 2001-02-09 Hyundai Electronics Ind Co Ltd ダマシン及び化学的機械的研磨工程を用いたｍｏｓトランジスタの形成方法
JP2003258121A (ja) * 2001-12-27 2003-09-12 Toshiba Corp 半導体装置及びその製造方法
JP2004022773A (ja) * 2002-06-17 2004-01-22 Nec Corp 半導体装置
JP2004111962A (ja) * 2002-09-19 2004-04-08 Samsung Electronics Co Ltd 金属ゲートパターンを有する半導体素子の製造方法
JP2005260028A (ja) * 2004-03-12 2005-09-22 Mitsubishi Electric Corp 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"「拡散方程式」", 材料組織学補助教材, JPN6013062804, ISSN: 0002708509 *
滝沢 聡: "「4. 拡散現象」", 北海道大学工学部応用理工系学科(応用マテリアルコース)テキスト, JPN6013062800, ISSN: 0002708508 *

Also Published As

Publication number Publication date
CN101589466A (zh) 2009-11-25
CN101589466B (zh) 2011-09-28
WO2008090023A1 (de) 2008-07-31
US20100072621A1 (en) 2010-03-25
EP2113131A1 (de) 2009-11-04
US8242599B2 (en) 2012-08-14
DE102007003541A1 (de) 2008-07-31

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