JP2010514219A - カーボンナノチューブトランジスタを用いた論理回路 - Google Patents
カーボンナノチューブトランジスタを用いた論理回路 Download PDFInfo
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- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000002071 nanotube Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
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Abstract
【選択図】図1
Description
Claims (20)
- 高供給基準と低供給基準との間に直列接続される第1のCNTFETおよび第2のCNTFETを備え、
前記第1のCNTFETが論理値Highおよび論理値Lowを受け取る論理入力を提供するゲートを有し、前記第2のCNTFETがバイアス電源に結合されるゲートを有することにより、前記第2のCNTFETが前記第1のCNTFETに能動負荷を提供し、適切な論理HighおよびLow出力レベルが提供される、
集積回路。 - 前記低供給基準のレベルは、論理Lowレベルより低い、請求項1に記載の集積回路。
- 前記第1のCNTFETと前記第2のCNTFETとでインバータゲートを構成する、請求項2に記載の集積回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、電子伝導性よりホール伝導性が強い、請求項3に記載の集積回路。
- 前記第1のCNTFETは、ホールを伝導するようバイアスをかけられ、前記第2のCNTFETは、電子を伝導するようバイアスをかけられ、前記第1のCNTFETは、前記第2のCNTFETより強い、請求項4に記載の集積回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、伝導帯より価電子帯に近いフェルミエネルギーレベルを有する材料によって形成されたドレインおよびソース電極を有する、請求項5に記載の集積回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、1つ以上のカーボンナノチューブを含むチャネルを有し、前記第1のCNTFETのチャネルが前記第2のCNTFETのチャネルより多くのカーボンナノチューブを有することにより、前記第1のCNTFETは、前記第2のCNTFETより強い伝導性を有する、請求項5に記載の集積回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、内在性カーボンナノチューブにより形成されたチャネルを有する、請求項1に記載の集積回路。
- インバータ回路であって、
前記インバータ回路の第1の供給基準と出力ノードとの間に結合された第1のCNTFETと、
前記出力ノードと第2の供給基準との間に結合された第2のCNTFETと、を備え、
前記第1のCNTFETは、前記インバータ回路に入力を提供し、前記第2のCNTFETは、前記第1のCNTFETに能動負荷を提供すべくバイアスがかけられる、インバータ回路。 - 前記第1の供給基準は、前記第2の供給基準より高い、請求項9に記載のインバータ回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、電子伝導性よりホール伝導性が強い、請求項10に記載のインバータ回路。
- 前記第1のCNTFETは、ホールを伝導するようバイアスをかけられ、前記第2のCNTFETは、電子を伝導するようバイアスをかけられ、前記第1のCNTFETは、前記第2のCNTFETより強い、請求項11に記載のインバータ回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、伝導帯より価電子帯に近いフェルミエネルギーレベルを有する材料によって形成されたドレインおよびソース電極を有する、請求項12に記載のインバータ回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、1つ以上のカーボンナノチューブを含むチャネルを有し、前記第1のCNTFETのチャネルが前記第2のCNTFETのチャネルより多くのカーボンナノチューブを有することにより、前記第1のCNTFETは、前記第2のCNTFETより強い伝導性を有する、請求項13に記載のインバータ回路。
- 前記第1のCNTFETおよび前記第2のCNTFETは、内在性カーボンナノチューブにより形成されたチャネルを有する、請求項9に記載のインバータ回路。
- コンピュータシステムであって、
(a)1つ以上のインバータ回路を有するプロセッサと、
(b)前記プロセッサに結合され、前記プロセッサに増設RAMを提供するメモリチップと、
(c)前記プロセッサに結合され、前記プロセッサと無線ネットワークとを通信可能に接続するアンテナと、
を備え、
前記1つ以上のインバータ回路は、
前記インバータ回路の第1の供給基準と出力ノードとの間に結合された第1のCNTFETと、
前記出力ノードと第2の供給基準との間に結合された第2のCNTFETと、を有し、
前記第1のCNTFETは、前記インバータ回路に入力を提供し、前記第2のCNTFETは、前記第1のCNTFETに能動負荷を提供すべくバイアスがかけられる、
コンピュータシステム。 - 前記第1の供給基準は、前記第2の供給基準より大きい、請求項16に記載のコンピュータシステム。
- 前記第1のCNTFETおよび前記第2のCNTFETは、電子伝導性よりホール伝導性が強い、請求項17に記載のコンピュータシステム。
- 前記第1のCNTFETは、ホールを伝導するようバイアスをかけられ、前記第2のCNTFETは、電子を伝導するようバイアスをかけられ、前記第1のCNTFETは、前記第2のCNTFETより強い、請求項18に記載のコンピュータシステム。
- 前記第1のCNTFETおよび前記第2のCNTFETは、伝導帯より価電子帯に近いフェルミエネルギーレベルを有する材料によって形成されたドレインおよびソース電極を有する、請求項19に記載のコンピュータシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/613,134 US8004043B2 (en) | 2006-12-19 | 2006-12-19 | Logic circuits using carbon nanotube transistors |
US11/613,134 | 2006-12-19 | ||
PCT/US2007/082965 WO2008076529A1 (en) | 2006-12-19 | 2007-10-30 | Logic circuits using carbon nanotube transistors |
Publications (2)
Publication Number | Publication Date |
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JP2010514219A true JP2010514219A (ja) | 2010-04-30 |
JP5373624B2 JP5373624B2 (ja) | 2013-12-18 |
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JP2009542989A Expired - Fee Related JP5373624B2 (ja) | 2006-12-19 | 2007-10-30 | カーボンナノチューブトランジスタを用いた論理回路 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8004043B2 (ja) |
JP (1) | JP5373624B2 (ja) |
KR (1) | KR20090091777A (ja) |
DE (1) | DE112007003087T5 (ja) |
TW (1) | TWI356588B (ja) |
WO (1) | WO2008076529A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014207439A (ja) * | 2013-04-15 | 2014-10-30 | ツィンファ ユニバーシティ | バイポーラ薄膜トランジスタ |
JP2015213994A (ja) * | 2014-05-12 | 2015-12-03 | 国立大学法人東北大学 | ナノメカニカル・スイッチを利用したデジタル回路 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US8004043B2 (en) | 2006-12-19 | 2011-08-23 | Intel Corporation | Logic circuits using carbon nanotube transistors |
US7858918B2 (en) * | 2007-02-05 | 2010-12-28 | Ludwig Lester F | Molecular transistor circuits compatible with carbon nanotube sensors and transducers |
KR101432037B1 (ko) * | 2008-04-25 | 2014-08-20 | 삼성전자주식회사 | 앰비폴라 특성을 가진 탄소나노튜브 트랜지스터를 구비한전환가능한 논리회로 |
KR20100094192A (ko) * | 2009-02-18 | 2010-08-26 | 삼성전자주식회사 | 탄소나노튜브 박막을 이용한 에스램 |
US10089930B2 (en) | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
EP2926376B1 (en) * | 2012-11-30 | 2017-11-08 | University of Florida Research Foundation, Inc. | Ambipolar vertical field effect transistor |
US11782057B2 (en) | 2014-12-18 | 2023-10-10 | Cardea Bio, Inc. | Ic with graphene fet sensor array patterned in layers above circuitry formed in a silicon based cmos wafer |
US9618474B2 (en) * | 2014-12-18 | 2017-04-11 | Edico Genome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
US10006910B2 (en) | 2014-12-18 | 2018-06-26 | Agilome, Inc. | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same |
US11921112B2 (en) | 2014-12-18 | 2024-03-05 | Paragraf Usa Inc. | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same |
US10594319B2 (en) * | 2016-06-03 | 2020-03-17 | Northwestern University | System and method for complimentary VT-drop ambipolar carbon nanotube logic |
US10665799B2 (en) | 2016-07-14 | 2020-05-26 | International Business Machines Corporation | N-type end-bonded metal contacts for carbon nanotube transistors |
US10665798B2 (en) | 2016-07-14 | 2020-05-26 | International Business Machines Corporation | Carbon nanotube transistor and logic with end-bonded metal contacts |
US10170702B2 (en) | 2017-01-12 | 2019-01-01 | International Business Machines Corporation | Intermetallic contact for carbon nanotube FETs |
US11309846B2 (en) * | 2017-08-25 | 2022-04-19 | University Of South Florida | Cascode common source transimpedance amplifiers for analyte monitoring systems |
KR102124110B1 (ko) * | 2019-10-08 | 2020-06-17 | 서경대학교 산학협력단 | 탄소나노튜브 트랜지스터로 구성된 버퍼를 갖는 제어구동장치 및 이를 이용하는 디스플레이 장치 |
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2006
- 2006-12-19 US US11/613,134 patent/US8004043B2/en not_active Expired - Fee Related
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2007
- 2007-10-29 TW TW096140552A patent/TWI356588B/zh not_active IP Right Cessation
- 2007-10-30 WO PCT/US2007/082965 patent/WO2008076529A1/en active Application Filing
- 2007-10-30 DE DE112007003087T patent/DE112007003087T5/de not_active Ceased
- 2007-10-30 KR KR1020097012726A patent/KR20090091777A/ko active Search and Examination
- 2007-10-30 JP JP2009542989A patent/JP5373624B2/ja not_active Expired - Fee Related
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2011
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JP2015213994A (ja) * | 2014-05-12 | 2015-12-03 | 国立大学法人東北大学 | ナノメカニカル・スイッチを利用したデジタル回路 |
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US20120049890A1 (en) | 2012-03-01 |
US8004043B2 (en) | 2011-08-23 |
US8513741B2 (en) | 2013-08-20 |
DE112007003087T5 (de) | 2009-10-15 |
JP5373624B2 (ja) | 2013-12-18 |
WO2008076529A1 (en) | 2008-06-26 |
US20080143389A1 (en) | 2008-06-19 |
TWI356588B (en) | 2012-01-11 |
TW200832912A (en) | 2008-08-01 |
KR20090091777A (ko) | 2009-08-28 |
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