JP2010510656A - 誘電性アンチヒューズと直列にシリサイドに隣接して結晶化されたｐ−ｉ−ｎダイオードおよびその形成方法 - Google Patents

誘電性アンチヒューズと直列にシリサイドに隣接して結晶化されたｐ−ｉ−ｎダイオードおよびその形成方法 Download PDF

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JP2010510656A
JP2010510656A JP2009537188A JP2009537188A JP2010510656A JP 2010510656 A JP2010510656 A JP 2010510656A JP 2009537188 A JP2009537188 A JP 2009537188A JP 2009537188 A JP2009537188 A JP 2009537188A JP 2010510656 A JP2010510656 A JP 2010510656A
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dielectric
layer
silicide
conductor
germanide
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JP2009537188A
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JP2010510656A5 (enExample
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ハーナー，エス．ブラッド
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サンディスク スリーディー，エルエルシー
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Priority claimed from US11/560,283 external-priority patent/US7682920B2/en
Priority claimed from US11/560,289 external-priority patent/US8018024B2/en
Application filed by サンディスク スリーディー，エルエルシー filed Critical サンディスク スリーディー，エルエルシー
Priority claimed from PCT/US2007/023855 external-priority patent/WO2008060543A2/en
Publication of JP2010510656A publication Critical patent/JP2010510656A/ja
Publication of JP2010510656A5 publication Critical patent/JP2010510656A5/ja
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JP2009537188A 2006-11-15 2007-11-13 誘電性アンチヒューズと直列にシリサイドに隣接して結晶化されたｐ−ｉ−ｎダイオードおよびその形成方法 Pending JP2010510656A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/560,283 US7682920B2 (en) 2003-12-03 2006-11-15 Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US11/560,289 US8018024B2 (en) 2003-12-03 2006-11-15 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
PCT/US2007/023855 WO2008060543A2 (en) 2006-11-15 2007-11-13 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same

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JP2010510656A true JP2010510656A (ja) 2010-04-02
JP2010510656A5 JP2010510656A5 (enExample) 2010-10-21

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009289963A (ja) * 2008-05-29 2009-12-10 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法
JP2012028765A (ja) * 2010-07-09 2012-02-09 Crossbar Inc ＳｉＧｅ材料を使用する抵抗性メモリー

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4719910B2 (ja) * 2008-11-26 2011-07-06 国立大学法人東北大学 半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302700A (ja) * 1993-04-19 1994-10-28 Kawasaki Steel Corp 半導体装置およびその製造方法
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
JP2003197867A (ja) * 2001-12-14 2003-07-11 Hewlett Packard Co <Hp> メモリ構造における連続アンチヒューズ材料
JP2003203864A (ja) * 2002-01-09 2003-07-18 Sangaku Renkei Kiko Kyushu:Kk 半導体薄膜の製造方法
JP2004327677A (ja) * 2003-04-24 2004-11-18 Sharp Corp 半導体膜およびその製造方法
JP2005347468A (ja) * 2004-06-02 2005-12-15 Matsushita Electric Ind Co Ltd 不揮発性メモリ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050158950A1 (en) * 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302700A (ja) * 1993-04-19 1994-10-28 Kawasaki Steel Corp 半導体装置およびその製造方法
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
JP2003197867A (ja) * 2001-12-14 2003-07-11 Hewlett Packard Co <Hp> メモリ構造における連続アンチヒューズ材料
JP2003203864A (ja) * 2002-01-09 2003-07-18 Sangaku Renkei Kiko Kyushu:Kk 半導体薄膜の製造方法
JP2004327677A (ja) * 2003-04-24 2004-11-18 Sharp Corp 半導体膜およびその製造方法
JP2005347468A (ja) * 2004-06-02 2005-12-15 Matsushita Electric Ind Co Ltd 不揮発性メモリ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009289963A (ja) * 2008-05-29 2009-12-10 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2012028765A (ja) * 2010-07-09 2012-02-09 Crossbar Inc ＳｉＧｅ材料を使用する抵抗性メモリー
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法

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TWI424535B (zh) 2014-01-21
TW200837897A (en) 2008-09-16

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