JP2010510541A5 - - Google Patents
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- Publication number
- JP2010510541A5 JP2010510541A5 JP2009537092A JP2009537092A JP2010510541A5 JP 2010510541 A5 JP2010510541 A5 JP 2010510541A5 JP 2009537092 A JP2009537092 A JP 2009537092A JP 2009537092 A JP2009537092 A JP 2009537092A JP 2010510541 A5 JP2010510541 A5 JP 2010510541A5
- Authority
- JP
- Japan
- Prior art keywords
- hard mask
- group
- tetrabutylammonium
- layer
- aromatic ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims 15
- 125000003118 aryl group Chemical group 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 7
- 125000002947 alkylene group Chemical group 0.000 claims 6
- 150000001282 organosilanes Chemical class 0.000 claims 5
- 229920000642 polymer Polymers 0.000 claims 5
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000003377 acid catalyst Substances 0.000 claims 3
- 125000000524 functional group Chemical group 0.000 claims 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims 3
- 125000005647 linker group Chemical group 0.000 claims 3
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 claims 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 3
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 239000003431 cross linking reagent Substances 0.000 claims 2
- 125000000623 heterocyclic group Chemical group 0.000 claims 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- SHFJWMWCIHQNCP-UHFFFAOYSA-M hydron;tetrabutylazanium;sulfate Chemical compound OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC SHFJWMWCIHQNCP-UHFFFAOYSA-M 0.000 claims 2
- KJIFKLIQANRMOU-UHFFFAOYSA-N oxidanium;4-methylbenzenesulfonate Chemical compound O.CC1=CC=C(S(O)(=O)=O)C=C1 KJIFKLIQANRMOU-UHFFFAOYSA-N 0.000 claims 2
- 238000006068 polycondensation reaction Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 239000003381 stabilizer Substances 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 2
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims 2
- LLNAMUJRIZIXHF-CLFYSBASSA-N (z)-2-methyl-3-phenylprop-2-en-1-ol Chemical compound OCC(/C)=C\C1=CC=CC=C1 LLNAMUJRIZIXHF-CLFYSBASSA-N 0.000 claims 1
- KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical compound NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 claims 1
- CLCSYZQBLQDRQU-UHFFFAOYSA-N 3-[3-(hexadecanoylamino)propyl-dimethylazaniumyl]propane-1-sulfonate Chemical compound CCCCCCCCCCCCCCCC(=O)NCCC[N+](C)(C)CCCS([O-])(=O)=O CLCSYZQBLQDRQU-UHFFFAOYSA-N 0.000 claims 1
- REAVCZWUMGIGSW-UHFFFAOYSA-M 4-methylbenzenesulfonate;tetrabutylazanium Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.CCCC[N+](CCCC)(CCCC)CCCC REAVCZWUMGIGSW-UHFFFAOYSA-M 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 claims 1
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- JTMZBRWRXFAITF-UHFFFAOYSA-N azane;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonic acid Chemical compound [NH4+].C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C JTMZBRWRXFAITF-UHFFFAOYSA-N 0.000 claims 1
- 239000007810 chemical reaction solvent Substances 0.000 claims 1
- DENRZWYUOJLTMF-UHFFFAOYSA-N diethyl sulfate Chemical compound CCOS(=O)(=O)OCC DENRZWYUOJLTMF-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- FDTUVFSBEYKVAP-UHFFFAOYSA-N formic acid;pyridine Chemical compound OC=O.C1=CC=NC=C1 FDTUVFSBEYKVAP-UHFFFAOYSA-N 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- WYSXJFIFFXPGAP-UHFFFAOYSA-N nitrous acid hydrobromide Chemical compound N(=O)O.Br WYSXJFIFFXPGAP-UHFFFAOYSA-N 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims 1
- MCZDHTKJGDCTAE-UHFFFAOYSA-M tetrabutylazanium;acetate Chemical compound CC([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC MCZDHTKJGDCTAE-UHFFFAOYSA-M 0.000 claims 1
- GMRIOAVKKGNMMV-UHFFFAOYSA-N tetrabutylazanium;azide Chemical compound [N-]=[N+]=[N-].CCCC[N+](CCCC)(CCCC)CCCC GMRIOAVKKGNMMV-UHFFFAOYSA-N 0.000 claims 1
- WGYONVRJGWHMKV-UHFFFAOYSA-M tetrabutylazanium;benzoate Chemical compound [O-]C(=O)C1=CC=CC=C1.CCCC[N+](CCCC)(CCCC)CCCC WGYONVRJGWHMKV-UHFFFAOYSA-M 0.000 claims 1
- KRRBFUJMQBDDPR-UHFFFAOYSA-N tetrabutylazanium;cyanide Chemical compound N#[C-].CCCC[N+](CCCC)(CCCC)CCCC KRRBFUJMQBDDPR-UHFFFAOYSA-N 0.000 claims 1
- SNMZANHSFVMKKA-UHFFFAOYSA-M tetrabutylazanium;formate Chemical compound [O-]C=O.CCCC[N+](CCCC)(CCCC)CCCC SNMZANHSFVMKKA-UHFFFAOYSA-M 0.000 claims 1
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 claims 1
- ZXUCBXRTRRIBSO-UHFFFAOYSA-L tetrabutylazanium;sulfate Chemical compound [O-]S([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC ZXUCBXRTRRIBSO-UHFFFAOYSA-L 0.000 claims 1
- WWIYWFVQZQOECA-UHFFFAOYSA-M tetramethylazanium;formate Chemical compound [O-]C=O.C[N+](C)(C)C WWIYWFVQZQOECA-UHFFFAOYSA-M 0.000 claims 1
- PTMFUWGXPRYYMC-UHFFFAOYSA-N triethylazanium;formate Chemical compound OC=O.CCN(CC)CC PTMFUWGXPRYYMC-UHFFFAOYSA-N 0.000 claims 1
- UPVCRZBVVOXMDA-UHFFFAOYSA-N trimethylazanium;formate Chemical compound OC=O.CN(C)C UPVCRZBVVOXMDA-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0115411 | 2006-11-21 | ||
| KR1020060115411A KR100796047B1 (ko) | 2006-11-21 | 2006-11-21 | 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스 |
| PCT/KR2007/005894 WO2008063016A1 (en) | 2006-11-21 | 2007-11-21 | Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010510541A JP2010510541A (ja) | 2010-04-02 |
| JP2010510541A5 true JP2010510541A5 (enExample) | 2011-01-13 |
| JP5271274B2 JP5271274B2 (ja) | 2013-08-21 |
Family
ID=39218552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009537092A Active JP5271274B2 (ja) | 2006-11-21 | 2007-11-21 | レジスト下層膜加工用ハードマスク組成物、前記ハードマスク組成物を用いた半導体集積回路デバイスの製造方法、および前記方法によって製造された半導体集積回路デバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8273519B2 (enExample) |
| EP (1) | EP2095188B1 (enExample) |
| JP (1) | JP5271274B2 (enExample) |
| KR (1) | KR100796047B1 (enExample) |
| CN (1) | CN101490621B (enExample) |
| TW (1) | TWI366068B (enExample) |
| WO (1) | WO2008063016A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100894417B1 (ko) * | 2007-09-06 | 2009-04-24 | 제일모직주식회사 | 갭 필 능력이 개선된 반도체 미세 갭 필용 유기실란계중합체 및 이를 이용한 반도체 미세 갭 필용 조성물 |
| JP2009199061A (ja) * | 2007-11-12 | 2009-09-03 | Rohm & Haas Electronic Materials Llc | オーバーコートされたフォトレジストと共に用いるためのコーティング組成物 |
| KR100930672B1 (ko) | 2008-01-11 | 2009-12-09 | 제일모직주식회사 | 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법 |
| JP5136439B2 (ja) * | 2008-11-28 | 2013-02-06 | Ｊｓｒ株式会社 | 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法 |
| KR101288572B1 (ko) * | 2008-12-17 | 2013-07-22 | 제일모직주식회사 | 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물 |
| KR101266291B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법 |
| KR101266290B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101354637B1 (ko) * | 2009-12-30 | 2014-01-22 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101344795B1 (ko) * | 2009-12-31 | 2013-12-26 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101400182B1 (ko) | 2009-12-31 | 2014-05-27 | 제일모직 주식회사 | 포토레지스트 하층막용 조성물 및 이를 이용하는 반도체 소자의 제조 방법 |
| KR101344794B1 (ko) | 2009-12-31 | 2014-01-16 | 제일모직주식회사 | 레지스트 하층막용 방향족 고리 함유 중합체 및 이를 포함하는 레지스트 하층막 조성물 |
| KR20110079202A (ko) | 2009-12-31 | 2011-07-07 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| US8980751B2 (en) * | 2010-01-27 | 2015-03-17 | Canon Nanotechnologies, Inc. | Methods and systems of material removal and pattern transfer |
| JP5765298B2 (ja) * | 2010-09-09 | 2015-08-19 | Jsr株式会社 | レジストパターン形成方法 |
| JP5518772B2 (ja) * | 2011-03-15 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法 |
| US8647809B2 (en) | 2011-07-07 | 2014-02-11 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
| KR101432607B1 (ko) * | 2011-08-11 | 2014-08-21 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101556281B1 (ko) | 2012-12-28 | 2015-09-30 | 제일모직 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| TWI541611B (zh) | 2013-06-26 | 2016-07-11 | 第一毛織股份有限公司 | 用於硬罩幕組合物的單體、包括該單體的硬罩幕組合物及使用該硬罩幕組合物形成圖案的方法 |
| KR101666484B1 (ko) * | 2013-06-26 | 2016-10-17 | 제일모직 주식회사 | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
| KR101705756B1 (ko) * | 2013-06-26 | 2017-02-13 | 제일모직 주식회사 | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
| JP6243815B2 (ja) * | 2014-09-01 | 2017-12-06 | 信越化学工業株式会社 | 半導体装置基板の製造方法 |
| KR102477091B1 (ko) | 2015-07-24 | 2022-12-13 | 삼성전자주식회사 | 2차원 물질 하드마스크와 그 제조방법 및 하드 마스크를 이용한 물질층 패턴 형성방법 |
| KR101920642B1 (ko) * | 2015-11-27 | 2018-11-21 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자 |
| CN109415513B (zh) * | 2016-06-16 | 2022-02-25 | 美国陶氏有机硅公司 | 富含硅的倍半硅氧烷树脂 |
| KR102480348B1 (ko) * | 2018-03-15 | 2022-12-23 | 삼성전자주식회사 | 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| CN108871814A (zh) * | 2018-07-09 | 2018-11-23 | 广东工贸职业技术学院 | 一种基于轮载式智能传感汽车轮胎动态负荷能力监测方法 |
| JP7553245B2 (ja) * | 2020-02-20 | 2024-09-18 | 東京応化工業株式会社 | ハードマスク形成用組成物及び電子部品の製造方法、及び樹脂 |
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| JP2623780B2 (ja) * | 1988-10-19 | 1997-06-25 | 富士通株式会社 | 有機硅素重合体レジスト組成物 |
| JP4096138B2 (ja) * | 1999-04-12 | 2008-06-04 | Ｊｓｒ株式会社 | レジスト下層膜用組成物の製造方法 |
| EP1837902B1 (en) | 2000-08-21 | 2017-05-24 | Dow Global Technologies LLC | Use of organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
| AU2002354487A1 (en) * | 2001-12-14 | 2003-06-30 | Asahi Kasei Kabushiki Kaisha | Coating composition for forming low-refractive index thin layers |
| US6730454B2 (en) * | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| JP3953982B2 (ja) | 2002-06-28 | 2007-08-08 | 富士通株式会社 | 半導体装置の製造方法及びパターンの形成方法 |
| JP2004059738A (ja) | 2002-07-29 | 2004-02-26 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP4369203B2 (ja) | 2003-03-24 | 2009-11-18 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
| US7202013B2 (en) * | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
| US7172849B2 (en) | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
| US7270931B2 (en) | 2003-10-06 | 2007-09-18 | International Business Machines Corporation | Silicon-containing compositions for spin-on ARC/hardmask materials |
| JP2005173552A (ja) * | 2003-11-20 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用下層膜形成材料およびこれを用いた配線形成方法 |
| JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
| JP4860953B2 (ja) | 2005-07-08 | 2012-01-25 | 富士通株式会社 | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
| EP1762895B1 (en) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
| JP2007291167A (ja) * | 2006-04-21 | 2007-11-08 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
| US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
-
2006
- 2006-11-21 KR KR1020060115411A patent/KR100796047B1/ko active Active
-
2007
- 2007-11-21 TW TW096144078A patent/TWI366068B/zh active
- 2007-11-21 JP JP2009537092A patent/JP5271274B2/ja active Active
- 2007-11-21 EP EP07834200.3A patent/EP2095188B1/en active Active
- 2007-11-21 CN CN2007800259245A patent/CN101490621B/zh active Active
- 2007-11-21 US US11/984,741 patent/US8273519B2/en active Active
- 2007-11-21 WO PCT/KR2007/005894 patent/WO2008063016A1/en not_active Ceased
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