JP2010508657A5 - - Google Patents

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Publication number
JP2010508657A5
JP2010508657A5 JP2009534733A JP2009534733A JP2010508657A5 JP 2010508657 A5 JP2010508657 A5 JP 2010508657A5 JP 2009534733 A JP2009534733 A JP 2009534733A JP 2009534733 A JP2009534733 A JP 2009534733A JP 2010508657 A5 JP2010508657 A5 JP 2010508657A5
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JP
Japan
Prior art keywords
source
drain region
region
drain
gate
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JP2009534733A
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English (en)
Japanese (ja)
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JP2010508657A (ja
JP5317353B2 (ja
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Priority claimed from US11/554,851 external-priority patent/US7608898B2/en
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Publication of JP2010508657A publication Critical patent/JP2010508657A/ja
Publication of JP2010508657A5 publication Critical patent/JP2010508657A5/ja
Application granted granted Critical
Publication of JP5317353B2 publication Critical patent/JP5317353B2/ja
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JP2009534733A 2006-10-31 2007-08-30 ワン・トランジスタｄｒａｍセル構造及びその製造方法 Active JP5317353B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/554,851 2006-10-31
US11/554,851 US7608898B2 (en) 2006-10-31 2006-10-31 One transistor DRAM cell structure
PCT/US2007/077170 WO2008054919A1 (en) 2006-10-31 2007-08-30 One transistor dram cell structure and method for forming

Publications (3)

Publication Number Publication Date
JP2010508657A JP2010508657A (ja) 2010-03-18
JP2010508657A5 true JP2010508657A5 (https=) 2010-10-14
JP5317353B2 JP5317353B2 (ja) 2013-10-16

Family

ID=39329076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009534733A Active JP5317353B2 (ja) 2006-10-31 2007-08-30 ワン・トランジスタｄｒａｍセル構造及びその製造方法

Country Status (7)

Country Link
US (2) US7608898B2 (https=)
EP (1) EP2080217A4 (https=)
JP (1) JP5317353B2 (https=)
KR (1) KR101389293B1 (https=)
CN (1) CN101523557B (https=)
TW (1) TWI441319B (https=)
WO (1) WO2008054919A1 (https=)

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CN102044433B (zh) * 2009-10-10 2013-02-27 复旦大学 一种混合源漏场效应晶体管及其制备方法
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CN101777562B (zh) * 2010-01-15 2015-05-20 复旦大学 浮栅非挥发半导体存储器及其制造方法
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