JP2010507260A5 - - Google Patents

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Publication number
JP2010507260A5
JP2010507260A5 JP2009533462A JP2009533462A JP2010507260A5 JP 2010507260 A5 JP2010507260 A5 JP 2010507260A5 JP 2009533462 A JP2009533462 A JP 2009533462A JP 2009533462 A JP2009533462 A JP 2009533462A JP 2010507260 A5 JP2010507260 A5 JP 2010507260A5
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JP
Japan
Prior art keywords
forming
groove
wafer
completed wafer
area
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JP2009533462A
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English (en)
Japanese (ja)
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JP5269799B2 (ja
JP2010507260A (ja
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Priority claimed from PCT/US2007/081380 external-priority patent/WO2008048925A2/en
Publication of JP2010507260A publication Critical patent/JP2010507260A/ja
Publication of JP2010507260A5 publication Critical patent/JP2010507260A5/ja
Application granted granted Critical
Publication of JP5269799B2 publication Critical patent/JP5269799B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009533462A 2006-10-17 2007-10-15 ウエハのバイア形成 Expired - Fee Related JP5269799B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82977206P 2006-10-17 2006-10-17
US60/829,772 2006-10-17
PCT/US2007/081380 WO2008048925A2 (en) 2006-10-17 2007-10-15 Wafer via formation

Publications (3)

Publication Number Publication Date
JP2010507260A JP2010507260A (ja) 2010-03-04
JP2010507260A5 true JP2010507260A5 (enExample) 2013-02-07
JP5269799B2 JP5269799B2 (ja) 2013-08-21

Family

ID=39314773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009533462A Expired - Fee Related JP5269799B2 (ja) 2006-10-17 2007-10-15 ウエハのバイア形成

Country Status (6)

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US (1) US7871927B2 (enExample)
EP (1) EP2074647B1 (enExample)
JP (1) JP5269799B2 (enExample)
KR (1) KR101175393B1 (enExample)
CN (1) CN101553903B (enExample)
WO (1) WO2008048925A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916754B (zh) * 2010-06-29 2012-08-29 香港应用科技研究院有限公司 通孔和通孔形成方法以及通孔填充方法
WO2012119333A1 (zh) * 2011-03-04 2012-09-13 中国科学院微电子研究所 穿硅通孔结构及其形成方法
US8486805B2 (en) 2011-03-04 2013-07-16 Institute of Microelectronics, Chinese Academy of Sciences Through-silicon via and method for forming the same
CN102683308B (zh) * 2011-03-11 2015-02-04 中国科学院微电子研究所 穿硅通孔结构及其形成方法
US20130015504A1 (en) * 2011-07-11 2013-01-17 Chien-Li Kuo Tsv structure and method for forming the same
JP5834563B2 (ja) * 2011-07-14 2015-12-24 セイコーエプソン株式会社 半導体装置の製造方法
MY201172A (en) * 2018-09-19 2024-02-08 Intel Corp Stacked through-silicon vias for multi-device packages

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