JP2010504627A - Iii族窒化物白色発光ダイオード - Google Patents
Iii族窒化物白色発光ダイオード Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title description 5
- 239000002096 quantum dot Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 36
- 229910052738 indium Inorganic materials 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 27
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 42
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 36
- 239000002243 precursor Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 239000011701 zinc Substances 0.000 description 15
- JMMJWXHSCXIWRF-UHFFFAOYSA-N ethyl(dimethyl)indigane Chemical compound CC[In](C)C JMMJWXHSCXIWRF-UHFFFAOYSA-N 0.000 description 9
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000103 photoluminescence spectrum Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001194 electroluminescence spectrum Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
【解決手段】 白色発光ダイオードは、n型半導体層と、n型半導体層を覆って形成された一又は複数の量子井戸構造と、量子井戸構造上に形成されたp型半導体層と、p型半導体層上に形成された第1の電極と、n型半導体層の表面の少なくとも一部上に形成された第2の電極とを備える。各量子井戸構造は、InxGa1−xN量子井戸層、InyGa1−yNバリア層(x>0.3又はx=0.3)、InzGa1−zN量子ドットを含み、ここでx<y<z≦1である。
【選択図】図1
Description
Claims (22)
- 白色発光ダイオードであって、
n型半導体層を備え、
一又は複数の量子井戸構造を備え、各量子井戸構造は、InxGa1−xN量子井戸層及びInyGa1−yNバリア層を備え、ここで、X>0.3又はX=0.3であり、各量子井戸構造はInzGa1−zN量子ドットを包含しており、ここでx<y<z≦1、前記量子井戸構造は前記n型半導体層を覆って形成されており、
前記量子井戸構造を覆って形成されたp型半導体層を備え、
前記p型半導体層を覆って形成された第1の電極を備え、
前記n型半導体層の第2の部分の表面の少なくとも一部分を覆って形成された第2の電極を備える、白色発光ダイオード。 - 白色発光ダイオードであって、
n型半導体層を備え、
一又は複数の量子井戸構造を備え、各量子井戸構造は、InxGa1−xN量子井戸層及びInyGa1−yNバリア層を備え、ここで、x>yであり、各量子井戸構造はInzGa1−zN量子ドットを包含しており、ここでx<z≦1、前記InxGa1−xN量子井戸層はp型ドーパントを含み、前記量子井戸構造は前記n型半導体層を覆って形成されており、
前記量子井戸構造を覆って形成されたp型半導体層を備え、
前記p型半導体層を覆って形成された第1の電極を備え、
前記n型半導体層の表面の少なくとも一部分に形成された第2の電極を備える、白色発光ダイオード。 - 前記InxGa1−xN量子井戸層はp型ドーパント及びn型ドーパントの両方を含む、請求項2に記載された白色発光ダイオード。
- 前記InxGa1−xN量子井戸層はp型ドーパントを含み、ここでx>0.3又はx=0.3である、請求項1に記載された白色発光ダイオード。
- 前記InxGa1−xN量子井戸層はp型ドーパント及びn型ドーパントの両方を含み、ここでx>0.3又はx=0.3である、請求項1に記載された白色発光ダイオード。
- 前記量子井戸構造は420nmから750nmの範囲にわたる連続スペクトルを有する、請求項1に記載された白色発光ダイオード。
- TMIn、TEIn及びEDMInの少なくともいずれか一つを第1の流量でまず流して最初に核の形成を行うと共に、TMGa及びアンモニアと一緒にTMIn、TEIn及びEDMInの少なくともいずれか一つを第2の流量で次いで流して前記核を成長させ前記量子井戸構造内にキャップすることによって、前記量子ドットが形成される、請求項1、請求項2及び請求項6のいずれか一項に記載の白色発光ダイオード。
- 前記量子井戸構造の数は1〜30の間にある、請求項7に記載された白色発光ダイオード。
- 前記InxGa1−xN量子井戸層の厚さは約1〜10nmであり、前記InyGa1−yNバリア層の厚さは約5〜30nmである、請求項7に記載された白色発光ダイオード。
- 1>x>y>0またはy=0である、請求項7に記載された白色発光ダイオード。
- 前記n型半導体層は基板上に形成されており、前記基板はサファイア、SiC、GaN及びZnOのいずれか一つからなる、請求項7に記載された白色発光ダイオード。
- ビスシクロペンタジエニルマグネシウム、ジエチル亜鉛、及びシランの少なくともいずれかが、前記量子井戸構造の成長中にドーパントとして使用される、請求項7に記載された白色発光ダイオード。
- 白色光を発光する量子井戸構造であって、
InxGa1−xN井戸層と、
x>0.3の前記InxGa1−xN井戸層に埋め込まれた、インジウムリッチの量子ドットと、
前記量子ドット及び前記量子井戸層を覆うInyGa1−yNバリア層と
を備える量子井戸構造。 - 白色光を発光する量子井戸構造であって、
p型ドーパントでドープされたInxGa1−xN井戸層と、
前記InxGa1−xN井戸層に埋め込まれた、インジウムリッチのInGaN量子ドットと、
前記量子ドット及び前記量子井戸層を覆うInyGa1−yNバリア層と
を備える量子井戸構造。 - 前記InGaN量子井戸層はn型ドーパントを含む、請求項14に記載された量子井戸構造。
- 前記InGaN量子井戸層はp型ドーパントを含む、請求項13に記載された量子井戸構造。
- 前記InGaN量子井戸層はn型ドーパント及びp型ドーパントの両方を含む、請求項13に記載された量子井戸構造。
- 当該量子井戸構造は、420nm〜750nmの範囲にわたる光を発光するように設けられており、前記光は420nm〜750nmの範囲の連続スペクトルを有する、請求項13及び請求項14のいずれか一項に記載された量子井戸構造。
- TMIn、TEIn及びEDMInの少なくともいずれか一つを第1の流量で最初に流してまず核の形成を行うと共に、TMG及びアンモニアと共にTMIn、TEIn及びEDMInの少なくとも一つを第2の流量で次いで流して前記核を成長させて前記量子井戸内にキャップすることによって、前記量子ドットが形成される、請求項13及び請求項14のいずれか一項に記載の量子井戸構造。
- 前記InxGa1−xN量子井戸層の厚さは約1〜10nmであり、前記InyGa1−yNバリア層の厚さは約5〜30nmである、請求項13及び請求項14のいずれか一項に記載の量子井戸構造。
- 1>x>y>0またはy=0である、請求項13及び請求項14のいずれか一項に記載の量子井戸構造。
- ビスシクロペンタジエニルマグネシウム、ジエチル亜鉛、及びシランの少なくともいずれかが、前記量子井戸層の成長中にドーパントとして使用される、請求項13及び請求項14のいずれか一項に記載の量子井戸構造。
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PCT/JP2006/319396 WO2008035447A1 (en) | 2006-09-22 | 2006-09-22 | Group iii nitride white light emitting diode |
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JP2010504627A true JP2010504627A (ja) | 2010-02-12 |
JP5260502B2 JP5260502B2 (ja) | 2013-08-14 |
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US (1) | US8120012B2 (ja) |
EP (1) | EP2064751A1 (ja) |
JP (1) | JP5260502B2 (ja) |
KR (1) | KR101485890B1 (ja) |
CN (1) | CN101346827B (ja) |
CA (1) | CA2627823A1 (ja) |
SG (1) | SG174789A1 (ja) |
WO (1) | WO2008035447A1 (ja) |
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100784065B1 (ko) * | 2006-09-18 | 2007-12-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1022525A (ja) * | 1996-06-28 | 1998-01-23 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH11243227A (ja) * | 1994-12-02 | 1999-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子の製造方法 |
JP2002232000A (ja) * | 2001-02-06 | 2002-08-16 | Showa Denko Kk | Iii族窒化物半導体発光ダイオード |
JP2003017741A (ja) * | 2001-03-21 | 2003-01-17 | Furukawa Electric Co Ltd:The | GaN系発光素子 |
US20030059971A1 (en) * | 2001-09-27 | 2003-03-27 | Chua Soo Jin | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
JP2003101069A (ja) * | 2001-09-25 | 2003-04-04 | Nagoya Industrial Science Research Inst | Iii族窒化物量子ドットおよびその製造方法 |
JP2004207610A (ja) * | 2002-12-26 | 2004-07-22 | Sumitomo Electric Ind Ltd | 白色発光素子およびその製造方法 |
JP2004343074A (ja) * | 2003-03-31 | 2004-12-02 | Ngk Insulators Ltd | 半導体基板、半導体発光素子及び半導体発光素子の製造方法 |
JP2005079583A (ja) * | 2003-08-28 | 2005-03-24 | Genesys Photonics Inc | 広域スペクトルAl(1−x−y)InyGaxN発光ダイオードおよび固体白色発光デバイス |
JP2005277401A (ja) * | 2004-02-24 | 2005-10-06 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物およびその製造方法 |
WO2008030183A1 (en) * | 2006-09-08 | 2008-03-13 | Agency For Science, Technology And Research | Tunable wavelength light emitting diode |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6900465B2 (en) | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
US6608330B1 (en) * | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
KR20000074844A (ko) | 1999-05-26 | 2000-12-15 | 김효근 | 질화인듐갈륨 활성 우물을 포함하는 양자우물 구조를 이용한백색 발광 다이오드 및 그의 제조방법 |
GB2361354B (en) | 2000-04-13 | 2004-06-30 | Arima Optoelectronics Corp | White light emitting diode with single asymmetric quantum well in active layer |
RU2233013C2 (ru) | 2002-03-06 | 2004-07-20 | Институт проблем химической физики РАН | Полупроводниковый электролюминесцентный источник света и способ его изготовления (варианты) |
DE102004004765A1 (de) | 2004-01-29 | 2005-09-01 | Rwe Space Solar Power Gmbh | Aktive Zonen aufweisende Halbleiterstruktur |
CN1595670B (zh) * | 2004-06-25 | 2011-12-28 | 清华大学 | 宽谱白光led的量子点有源区结构及其外延生长方法 |
CN100349306C (zh) | 2004-08-27 | 2007-11-14 | 中国科学院半导体研究所 | 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法 |
TWI253191B (en) | 2005-01-06 | 2006-04-11 | Genesis Photonics Inc | White light-emitting equipment with LED, and its application |
-
2006
- 2006-09-22 JP JP2009512766A patent/JP5260502B2/ja not_active Expired - Fee Related
- 2006-09-22 KR KR1020087013823A patent/KR101485890B1/ko not_active IP Right Cessation
- 2006-09-22 SG SG2011064805A patent/SG174789A1/en unknown
- 2006-09-22 US US12/442,180 patent/US8120012B2/en not_active Expired - Fee Related
- 2006-09-22 CA CA002627823A patent/CA2627823A1/en not_active Abandoned
- 2006-09-22 EP EP06810802A patent/EP2064751A1/en not_active Withdrawn
- 2006-09-22 WO PCT/JP2006/319396 patent/WO2008035447A1/en active Application Filing
- 2006-09-22 CN CN2006800492175A patent/CN101346827B/zh not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11243227A (ja) * | 1994-12-02 | 1999-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子の製造方法 |
JPH1022525A (ja) * | 1996-06-28 | 1998-01-23 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JP2002232000A (ja) * | 2001-02-06 | 2002-08-16 | Showa Denko Kk | Iii族窒化物半導体発光ダイオード |
JP2003017741A (ja) * | 2001-03-21 | 2003-01-17 | Furukawa Electric Co Ltd:The | GaN系発光素子 |
JP2003101069A (ja) * | 2001-09-25 | 2003-04-04 | Nagoya Industrial Science Research Inst | Iii族窒化物量子ドットおよびその製造方法 |
US20030059971A1 (en) * | 2001-09-27 | 2003-03-27 | Chua Soo Jin | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
JP2004207610A (ja) * | 2002-12-26 | 2004-07-22 | Sumitomo Electric Ind Ltd | 白色発光素子およびその製造方法 |
JP2004343074A (ja) * | 2003-03-31 | 2004-12-02 | Ngk Insulators Ltd | 半導体基板、半導体発光素子及び半導体発光素子の製造方法 |
JP2005079583A (ja) * | 2003-08-28 | 2005-03-24 | Genesys Photonics Inc | 広域スペクトルAl(1−x−y)InyGaxN発光ダイオードおよび固体白色発光デバイス |
JP2005277401A (ja) * | 2004-02-24 | 2005-10-06 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物およびその製造方法 |
WO2008030183A1 (en) * | 2006-09-08 | 2008-03-13 | Agency For Science, Technology And Research | Tunable wavelength light emitting diode |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019093056A1 (ja) * | 2017-11-09 | 2019-05-16 | 信越半導体株式会社 | 半導体型蛍光体 |
JP2019085519A (ja) * | 2017-11-09 | 2019-06-06 | 信越半導体株式会社 | 半導体型蛍光体 |
US11898078B2 (en) | 2017-11-09 | 2024-02-13 | Shin-Etsu Handotai Co., Ltd. | Semiconductor phosphor |
Also Published As
Publication number | Publication date |
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EP2064751A1 (en) | 2009-06-03 |
CN101346827B (zh) | 2010-10-06 |
WO2008035447A1 (en) | 2008-03-27 |
US8120012B2 (en) | 2012-02-21 |
KR101485890B1 (ko) | 2015-01-26 |
CA2627823A1 (en) | 2008-03-27 |
US20090302308A1 (en) | 2009-12-10 |
SG174789A1 (en) | 2011-10-28 |
KR20090054410A (ko) | 2009-05-29 |
JP5260502B2 (ja) | 2013-08-14 |
CN101346827A (zh) | 2009-01-14 |
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