JP2010500761A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010500761A5 JP2010500761A5 JP2009523910A JP2009523910A JP2010500761A5 JP 2010500761 A5 JP2010500761 A5 JP 2010500761A5 JP 2009523910 A JP2009523910 A JP 2009523910A JP 2009523910 A JP2009523910 A JP 2009523910A JP 2010500761 A5 JP2010500761 A5 JP 2010500761A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning process
- dry cleaning
- silicon oxide
- process further
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 27
- 238000005108 dry cleaning Methods 0.000 claims 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 238000003776 cleavage reaction Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 230000007017 scission Effects 0.000 claims 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 238000007654 immersion Methods 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 2
- 239000000356 contaminant Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/463,425 | 2006-08-09 | ||
| US11/463,425 US7745309B2 (en) | 2006-08-09 | 2006-08-09 | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure |
| PCT/US2007/075118 WO2008021746A2 (en) | 2006-08-09 | 2007-08-02 | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010500761A JP2010500761A (ja) | 2010-01-07 |
| JP2010500761A5 true JP2010500761A5 (OSRAM) | 2010-09-16 |
| JP5340934B2 JP5340934B2 (ja) | 2013-11-13 |
Family
ID=39051326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009523910A Expired - Fee Related JP5340934B2 (ja) | 2006-08-09 | 2007-08-02 | シリコン・オン・インシュレータ構造に使用されるプラズマ浸漬イオン注入処理による表面活性化のための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7745309B2 (OSRAM) |
| JP (1) | JP5340934B2 (OSRAM) |
| TW (1) | TWI366237B (OSRAM) |
| WO (1) | WO2008021746A2 (OSRAM) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7390708B2 (en) * | 2006-10-23 | 2008-06-24 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Patterning of doped poly-silicon gates |
| US7858495B2 (en) * | 2008-02-04 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP5452590B2 (ja) * | 2008-06-20 | 2014-03-26 | 天錫 李 | 薄膜製造方法 |
| JP5663150B2 (ja) * | 2008-07-22 | 2015-02-04 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| EP2282332B1 (en) * | 2009-08-04 | 2012-06-27 | S.O.I. TEC Silicon | Method for fabricating a semiconductor substrate |
| TWI402898B (zh) * | 2009-09-03 | 2013-07-21 | Atomic Energy Council | 鈍化修補太陽能電池缺陷之方法 |
| KR101705937B1 (ko) | 2011-01-25 | 2017-02-10 | 에베 그룹 에. 탈너 게엠베하 | 웨이퍼들의 영구적 결합을 위한 방법 |
| JP2014516470A (ja) | 2011-04-08 | 2014-07-10 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | ウェハを恒久的にボンディングするための方法 |
| US8987096B2 (en) * | 2012-02-07 | 2015-03-24 | United Microelectronics Corp. | Semiconductor process |
| CN104488065B (zh) * | 2012-07-24 | 2017-09-05 | Ev 集团 E·索尔纳有限责任公司 | 永久结合晶圆的方法及装置 |
| US8951896B2 (en) | 2013-06-28 | 2015-02-10 | International Business Machines Corporation | High linearity SOI wafer for low-distortion circuit applications |
| EP3608973A1 (en) * | 2018-08-08 | 2020-02-12 | Meyer Burger Research AG | Method for manufacturing photovoltaic devices and photovoltaic devices made with the method |
| CN117174728B (zh) * | 2023-11-02 | 2024-02-20 | 合肥新晶集成电路有限公司 | 晶圆处理方法及晶圆结构 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472522A (en) * | 1987-09-14 | 1989-03-17 | Nippon Telegraph & Telephone | Apparatus for manufacturing semiconductor substrate |
| JPH0391227A (ja) * | 1989-09-01 | 1991-04-16 | Nippon Soken Inc | 半導体基板の接着方法 |
| JP2910334B2 (ja) * | 1991-07-22 | 1999-06-23 | 富士電機株式会社 | 接合方法 |
| WO1999026277A1 (en) | 1997-11-17 | 1999-05-27 | Mattson Technology, Inc. | Systems and methods for plasma enhanced processing of semiconductor wafers |
| US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
| US6489241B1 (en) * | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
| US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
| US7183177B2 (en) | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
| US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
| JP4730645B2 (ja) * | 2004-02-13 | 2011-07-20 | 株式会社Ｓｕｍｃｏ | Ｓｏｉウェーハの製造方法 |
| US7261793B2 (en) * | 2004-08-13 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | System and method for low temperature plasma-enhanced bonding |
-
2006
- 2006-08-09 US US11/463,425 patent/US7745309B2/en active Active
-
2007
- 2007-08-02 JP JP2009523910A patent/JP5340934B2/ja not_active Expired - Fee Related
- 2007-08-02 WO PCT/US2007/075118 patent/WO2008021746A2/en not_active Ceased
- 2007-08-09 TW TW096129446A patent/TWI366237B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010500761A5 (OSRAM) | ||
| JP5989642B2 (ja) | シリコン・オン・インシュレータウエハをインサイチュで不導体化する方法 | |
| KR100769327B1 (ko) | 두 웨이퍼 결합에 선행되는 열처리 | |
| KR100755368B1 (ko) | 3차원 구조를 갖는 반도체 소자의 제조 방법들 및 그에의해 제조된 반도체 소자들 | |
| JP2013534731A5 (OSRAM) | ||
| KR101541940B1 (ko) | Ｓｏｉ 기판의 제조 방법 | |
| JP2006080314A (ja) | 結合基板の製造方法 | |
| TWI456637B (zh) | 絕緣層上覆矽（ｓｏｉ）基板之製造方法 | |
| JP2009111362A5 (OSRAM) | ||
| JP2006191029A5 (OSRAM) | ||
| TW200822241A (en) | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure | |
| JP2009212503A5 (OSRAM) | ||
| JP2009135430A5 (OSRAM) | ||
| JP2009094487A5 (OSRAM) | ||
| JP2008306166A (ja) | 半導体装置製造用基板の作製方法、および半導体装置の作製方法 | |
| RU2217842C1 (ru) | Способ изготовления структуры кремний-на-изоляторе | |
| JP2010538459A (ja) | 熱処理を用いる剥離プロセスにおける半導体ウエハの再使用 | |
| JP2010087492A (ja) | Ｓｏｉ基板の作製方法 | |
| JP5417399B2 (ja) | 複合ウェーハの製造方法 | |
| JP2017005201A5 (OSRAM) | ||
| JP2011512040A5 (OSRAM) | ||
| JP2020096155A5 (OSRAM) | ||
| KR101969679B1 (ko) | Soi 웨이퍼와 열처리 공정을 이용한 박막 형성 및 전사 방법 | |
| TWI483350B (zh) | SOI wafer manufacturing method and glass cleaning method | |
| JP2005079389A (ja) | 貼り合わせウェーハの分離方法及びその分離用ボート |