JP2010278224A - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 279
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
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- 239000010410 layer Substances 0.000 claims description 96
- 238000000034 method Methods 0.000 claims description 20
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- 238000005530 etching Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
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- 229910002601 GaN Inorganic materials 0.000 description 28
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- 229910052733 gallium Inorganic materials 0.000 description 4
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- 239000010980 sapphire Substances 0.000 description 3
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 210000000746 body region Anatomy 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【解決手段】転位束集中領域を含むn型窒化物半導体基板と、n型窒化物半導体基板上に、n型窒化物半導体層、活性層およびp型窒化物半導体層をこの順序で有する窒化物半導体積層構造体と、を含み、転位束集中領域に対応する窒化物半導体積層構造体の領域に誘電体領域を有し、p型窒化物半導体層および誘電体領域のそれぞれの一部に接して設置されたp型用電極と、n型窒化物半導体基板の窒化物半導体積層構造体の設置側とは反対側に設置されたn型用電極と、を有する窒化物半導体発光素子およびその製造方法である。
【選択図】図1
Description
図1(a)に、本発明の窒化物半導体発光素子の一例である実施の形態1の窒化物半導体発光ダイオード素子の模式的な平面図を示し、図1(b)に、図1(a)のIb−Ibに沿った模式的な断面図を示す。
図9(a)に、本発明の窒化物半導体発光素子の他の一例である実施の形態2の窒化物半導体発光ダイオード素子の模式的な平面図を示し、図9(b)に、図9(a)のIXb−IXbに沿った模式的な断面図を示す。
図12(a)に、本発明の窒化物半導体発光素子の他の一例である実施の形態3の窒化物半導体発光ダイオード素子の模式的な平面図を示し、図12(b)に、図12(a)のXIIb−XIIbに沿った模式的な断面図を示す。
図13に、本発明の窒化物半導体発光素子の他の一例である実施の形態4の窒化物半導体発光ダイオード素子の模式的な断面図を示す。ここで、実施の形態4の窒化物半導体発光ダイオード素子は、n型窒化物半導体基板1の表面において転位束集中領域8がランダムに形成されている点に特徴がある。
Claims (9)
- 転位束集中領域を含むn型窒化物半導体基板と、
前記n型窒化物半導体基板上に、n型窒化物半導体層、活性層およびp型窒化物半導体層をこの順序で有する窒化物半導体積層構造体と、を含み、
前記転位束集中領域に対応する前記窒化物半導体積層構造体の領域に誘電体領域を有し、
前記p型窒化物半導体層および前記誘電体領域のそれぞれの一部に接して設置されたp型用電極と、
前記n型窒化物半導体基板の前記窒化物半導体積層構造体の設置側とは反対側に設置されたn型用電極と、を有する、窒化物半導体発光素子。 - 前記転位束集中領域の表面は、点状および線状の少なくとも一方の形状に形成されている、請求項1に記載の窒化物半導体発光素子。
- 前記p型用電極の少なくとも一部が、前記誘電体領域に沿うようにして配置されている、請求項1または2に記載の窒化物半導体発光素子。
- 前記誘電体領域は、酸化シリコン、窒化シリコン、窒化アルミニウム、酸化アルミニウム、酸化チタン、酸化タンタル、酸化ニオブ、酸化ジルコニウムおよび酸化ハフニウムからなる群から選択された少なくとも1種の誘電体を含む単層膜、または前記単層膜が複数積層してなる多層膜を含む、請求項1から3のいずれかに記載の窒化物半導体発光素子。
- 前記転位束集中領域は、前記n型窒化物半導体基板の表面において周期的に配置されている、請求項1から4のいずれかに記載の窒化物半導体発光素子。
- 前記転位束集中領域の周期の間隔は、100μm以上1000μm以下の間隔をあけて配置されている、請求項5に記載の窒化物半導体発光素子。
- 前記転位束集中領域は、前記n型窒化物半導体基板の表面においてランダムに配置されている、請求項1から4のいずれかに記載の窒化物半導体発光素子。
- 請求項1から7のいずれかに記載の窒化物半導体発光素子を製造する方法であって、
前記転位束集中領域を含む前記n型窒化物半導体基板上に、前記n型窒化物半導体層、前記活性層および前記p型窒化物半導体層をこの順序で積層することによって前記窒化物半導体積層構造体を形成する工程と、
前記転位束集中領域に対応する前記窒化物半導体積層構造体の領域をエッチングすることによって前記窒化物半導体積層構造体に孔を形成する工程と、
前記窒化物半導体積層構造体の前記孔を誘電体で埋めることによって前記誘電体領域を形成する工程と、を含む、窒化物半導体発光素子の製造方法。 - 前記エッチングは、水酸化カリウム水溶液を用いて前記窒化物半導体積層構造体をウエットエッチングすることにより行なわれる、請求項8に記載の窒化物半導体発光素子の製造方法。
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JP2009129138A JP5306904B2 (ja) | 2009-05-28 | 2009-05-28 | 窒化物半導体発光ダイオード素子およびその製造方法 |
US12/784,223 US20100301381A1 (en) | 2009-05-28 | 2010-05-20 | Nitride semiconductor light emitting element and manufacturing method thereof |
CN201010194102.3A CN101901860A (zh) | 2009-05-28 | 2010-05-28 | 氮化物半导体发光元件及其制造方法 |
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Cited By (3)
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WO2013061735A1 (ja) * | 2011-10-25 | 2013-05-02 | 昭和電工株式会社 | 発光ダイオード、発光ダイオードの製造方法、発光ダイオードランプ及び照明装置 |
JP2013191670A (ja) * | 2012-03-13 | 2013-09-26 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP2014063904A (ja) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体発光素子及びその製造方法 |
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JP4786730B2 (ja) * | 2009-05-28 | 2011-10-05 | シャープ株式会社 | 電界効果型トランジスタおよびその製造方法 |
US9184344B2 (en) * | 2012-01-25 | 2015-11-10 | Invenlux Limited | Lighting-emitting device with nanostructured layer and method for fabricating the same |
FR3060837B1 (fr) * | 2016-12-15 | 2019-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif comprenant une couche de materiau iii-n avec des defauts de surface |
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CN1581526A (zh) * | 2003-08-07 | 2005-02-16 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
JP4974455B2 (ja) * | 2004-11-26 | 2012-07-11 | ソニー株式会社 | GaN系発光ダイオードの製造方法 |
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2009
- 2009-05-28 JP JP2009129138A patent/JP5306904B2/ja not_active Expired - Fee Related
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2010
- 2010-05-20 US US12/784,223 patent/US20100301381A1/en not_active Abandoned
- 2010-05-28 CN CN201010194102.3A patent/CN101901860A/zh active Pending
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JP2004327879A (ja) * | 2003-04-28 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子および光学装置 |
JP2007184371A (ja) * | 2006-01-05 | 2007-07-19 | Sumitomo Electric Ind Ltd | 電極一体形成型窒化物系半導体装置 |
JP2008130656A (ja) * | 2006-11-17 | 2008-06-05 | Sony Corp | 発光ダイオードおよびその製造方法ならびに光源セルユニットならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013061735A1 (ja) * | 2011-10-25 | 2013-05-02 | 昭和電工株式会社 | 発光ダイオード、発光ダイオードの製造方法、発光ダイオードランプ及び照明装置 |
US9705034B2 (en) | 2011-10-25 | 2017-07-11 | Showa Denko K.K. | Light-emitting diode, method for manufacturing light-emitting diode, light-emitting diode lamp and illumination device |
JP2013191670A (ja) * | 2012-03-13 | 2013-09-26 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP2014063904A (ja) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US9130134B2 (en) | 2012-09-21 | 2015-09-08 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
Also Published As
Publication number | Publication date |
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US20100301381A1 (en) | 2010-12-02 |
CN101901860A (zh) | 2010-12-01 |
JP5306904B2 (ja) | 2013-10-02 |
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