JP2010263183A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 50
- 239000000956 alloy Substances 0.000 claims abstract description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 29
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000005669 field effect Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 31
- 125000004429 atom Chemical group 0.000 claims description 23
- 239000003989 dielectric material Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910000691 Re alloy Inorganic materials 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000007725 thermal activation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910015868 MSiO Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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Abstract
【解決手段】半導体基板上に形成されたゲート誘電体層108と、ゲート誘電体層108上に形成された酸素を含む合金層110と、酸素を含む合金層110上に形成されたRe層112と、ゲート誘電体層108と酸素を含む合金層110との間に位置するRe酸化物層502を含むp 型電界効果トランジスタを具備する。
【選択図】 図7
Description
Claims (5)
- 半導体基板上に形成された第1の高誘電体材料層と、
前記第1の高誘電体材料層上に形成された酸素を含む第1の合金層と、
前記酸素を含む第1の合金層上に形成されたRe層と、
前記第1の高誘電体材料層と前記酸素を含む第1の合金層との間に位置するRe酸化物層
を含むp 型電界効果トランジスタを具備する半導体装置。 - 前記半導体基板上に形成された第2の高誘電体材料層と、
前記第2の高誘電体材料層上に形成された酸素を含む第2の合金層と、
前記酸素を含む第2の合金層上に形成されたSiを含む金属層と、
前記第2の高誘電体材料層と前記酸素を含む第2の合金層との間に位置するAl層と、
前記Siを含む金属層と前記酸素を含む第2の合金層との間に位置するAl層
を含むn 型電界効果トランジスタをさらに具備する請求項1記載の半導体装置。 - 半導体基板上に高誘電体材料の層を堆積し、
酸素原子を含む合金層を形成し、
Re及びRe酸化物からなるグループから選択される1以上からなる第1の層を前記合金層の一部領域上に堆積し、
熱処理を加え、前記高誘電体材料の層と前記合金層との間に、Re酸化物層を形成する
ことを具備するp 型電界効果トランジスタを有する半導体装置の製造方法。 - 前記第1の層を前記合金層の一部領域上に堆積した後に、全面にSiを含む金属層を堆積し、
前記Siを含む金属層、前記第1の層、前記合金層、及び前記高誘電体材料の層からなる積層構造をパターニングして、前記p 型電界効果トランジスタの形成領域及びn 型電界効果トランジスタの形成領域に積層構造を残し、
前記Siを含む金属層に対してAl原子を注入した後、熱処理を行って、前記n 型電界効果トランジスタの形成領域において前記合金層と前記高誘電体材料の層との間に第1のAl層を形成する請求項3記載の半導体装置の製造方法。 - 前記熱処理を行って、前記n 型電界効果トランジスタの形成領域において前記合金層と前記高誘電体材料の層との間に前記第1のAl層を形成する際に、前記p 型電界効果トランジスタの形成領域においてSiを含む前記金属層と前記合金層との間にAlとReの合金層を形成し、かつ前記n 型電界効果トランジスタの形成領域において前記合金層と前記高誘電体材料の層との間に第2のAl層を形成する請求項4記載の半導体装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/434,070 | 2009-05-01 | ||
US12/434,070 US8120117B2 (en) | 2009-05-01 | 2009-05-01 | Semiconductor device with metal gate |
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JP2010263183A true JP2010263183A (ja) | 2010-11-18 |
JP2010263183A5 JP2010263183A5 (ja) | 2012-04-19 |
JP5023163B2 JP5023163B2 (ja) | 2012-09-12 |
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JP (1) | JP5023163B2 (ja) |
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US20110095379A1 (en) * | 2009-10-28 | 2011-04-28 | International Business Machines Corporation | Scaling of metal gate with aluminum containing metal layer for threshold voltage shift |
US8435878B2 (en) | 2010-04-06 | 2013-05-07 | International Business Machines Corporation | Field effect transistor device and fabrication |
CN103311247B (zh) * | 2012-03-14 | 2016-07-13 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN103311281B (zh) * | 2012-03-14 | 2016-03-30 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
JP5960491B2 (ja) * | 2012-04-27 | 2016-08-02 | キヤノンアネルバ株式会社 | 半導体装置およびその製造方法 |
CN103545190B (zh) * | 2012-07-16 | 2016-05-04 | 中国科学院微电子研究所 | 栅极结构的形成方法、半导体器件的形成方法以及半导体器件 |
US8921171B2 (en) | 2012-07-16 | 2014-12-30 | Institute of Microelectronics, Chinese Academy of Sciences | Method for forming gate structure, method for forming semiconductor device, and semiconductor device |
US9064857B2 (en) * | 2012-12-19 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | N metal for FinFET |
US9466492B2 (en) | 2014-05-02 | 2016-10-11 | International Business Machines Corporation | Method of lateral oxidation of NFET and PFET high-K gate stacks |
KR102354369B1 (ko) | 2015-11-20 | 2022-01-21 | 삼성전자주식회사 | 반도체 소자 |
KR102571567B1 (ko) | 2018-11-02 | 2023-08-29 | 삼성전자주식회사 | 반도체 소자 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336734A (ja) * | 1989-07-04 | 1991-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0799290A (ja) * | 1993-06-07 | 1995-04-11 | Motorola Inc | 半導体素子および強誘電体コンデンサ |
JP2008084970A (ja) * | 2006-09-26 | 2008-04-10 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2009141161A (ja) * | 2007-12-07 | 2009-06-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US20100013021A1 (en) * | 2008-07-21 | 2010-01-21 | International Business Machines Corporation | METHOD TO REDUCE THRESHOLD VOLTAGE (Vt) IN SILICON GERMANIUM (SIGE), HIGH-K DIELECTRIC-METAL GATE, P-TYPE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS |
JP2011509523A (ja) * | 2008-01-03 | 2011-03-24 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体デバイスを形成する方法 |
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US7494927B2 (en) * | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
US7189431B2 (en) * | 2004-09-30 | 2007-03-13 | Tokyo Electron Limited | Method for forming a passivated metal layer |
US7863126B2 (en) * | 2008-05-15 | 2011-01-04 | International Business Machines Corporation | Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336734A (ja) * | 1989-07-04 | 1991-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0799290A (ja) * | 1993-06-07 | 1995-04-11 | Motorola Inc | 半導体素子および強誘電体コンデンサ |
US5510651A (en) * | 1993-06-07 | 1996-04-23 | Motorola, Inc. | Semiconductor device having a reducing/oxidizing conductive material |
JP2008084970A (ja) * | 2006-09-26 | 2008-04-10 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2009141161A (ja) * | 2007-12-07 | 2009-06-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2011509523A (ja) * | 2008-01-03 | 2011-03-24 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体デバイスを形成する方法 |
US20100013021A1 (en) * | 2008-07-21 | 2010-01-21 | International Business Machines Corporation | METHOD TO REDUCE THRESHOLD VOLTAGE (Vt) IN SILICON GERMANIUM (SIGE), HIGH-K DIELECTRIC-METAL GATE, P-TYPE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS |
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US20100276760A1 (en) | 2010-11-04 |
US8120117B2 (en) | 2012-02-21 |
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