JP2010199569A - Ｓｉｍｏｘウェーハの製造方法 - Google Patents

Ｓｉｍｏｘウェーハの製造方法 Download PDF

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Publication number
JP2010199569A
JP2010199569A JP2010015046A JP2010015046A JP2010199569A JP 2010199569 A JP2010199569 A JP 2010199569A JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010199569 A JP2010199569 A JP 2010199569A
Authority
JP
Japan
Prior art keywords
wafer
heating fluid
holding means
ion implantation
wafer holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010015046A
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English (en)
Japanese (ja)
Other versions
JP2010199569A5 (https=
Inventor
Bong-Gyun Ko
奉均 高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2010015046A priority Critical patent/JP2010199569A/ja
Publication of JP2010199569A publication Critical patent/JP2010199569A/ja
Publication of JP2010199569A5 publication Critical patent/JP2010199569A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H10P30/209—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
JP2010015046A 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法 Withdrawn JP2010199569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010015046A JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009021421 2009-02-02
JP2010015046A JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Publications (2)

Publication Number Publication Date
JP2010199569A true JP2010199569A (ja) 2010-09-09
JP2010199569A5 JP2010199569A5 (https=) 2013-03-07

Family

ID=42398029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010015046A Withdrawn JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Country Status (2)

Country Link
US (1) US8153450B2 (https=)
JP (1) JP2010199569A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151651B2 (ja) * 2008-04-22 2013-02-27 株式会社Ｓｕｍｃｏ 酸素イオン注入装置
JP2011029618A (ja) 2009-06-25 2011-02-10 Sumco Corp Ｓｉｍｏｘウェーハの製造方法、ｓｉｍｏｘウェーハ
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JPH0927462A (ja) 1995-07-07 1997-01-28 Tel Varian Ltd イオン注入方法およびその装置
US5930643A (en) * 1997-12-22 1999-07-27 International Business Machines Corporation Defect induced buried oxide (DIBOX) for throughput SOI
US6614190B2 (en) * 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
US6794662B1 (en) 2003-10-07 2004-09-21 Ibis Technology Corporation Thermosetting resin wafer-holding pin
JP2007005563A (ja) 2005-06-23 2007-01-11 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
EP1909309A4 (en) * 2005-07-22 2010-10-20 Sumco Corp METHOD OF MANUFACTURING A SIMOX WAFER AND SIMOX WAFER PRODUCED BY SUCH A METHOD
JP4795755B2 (ja) 2005-08-25 2011-10-19 株式会社日立ハイテクノロジーズ 半導体基板の製造装置
EP1953802A3 (en) * 2007-02-01 2012-05-23 Parker-Hannifin Corporation Semiconductor process chamber
JP2009054837A (ja) * 2007-08-28 2009-03-12 Sumco Corp Ｓｉｍｏｘウェーハ製造方法およびｓｉｍｏｘウェーハ

Also Published As

Publication number Publication date
US8153450B2 (en) 2012-04-10
US20100197047A1 (en) 2010-08-05

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