JP2010192880A5 - - Google Patents
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- Publication number
- JP2010192880A5 JP2010192880A5 JP2009296775A JP2009296775A JP2010192880A5 JP 2010192880 A5 JP2010192880 A5 JP 2010192880A5 JP 2009296775 A JP2009296775 A JP 2009296775A JP 2009296775 A JP2009296775 A JP 2009296775A JP 2010192880 A5 JP2010192880 A5 JP 2010192880A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- semiconductor material
- forming
- type dopant
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002019 doping agent Substances 0.000 claims 28
- 239000004065 semiconductor Substances 0.000 claims 22
- 239000000463 material Substances 0.000 claims 21
- 238000000034 method Methods 0.000 claims 17
- 239000002243 precursor Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000003877 atomic layer epitaxy Methods 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14119708P | 2008-12-29 | 2008-12-29 | |
| US61/141,197 | 2008-12-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010192880A JP2010192880A (ja) | 2010-09-02 |
| JP2010192880A5 true JP2010192880A5 (enExample) | 2012-09-06 |
| JP5080552B2 JP5080552B2 (ja) | 2012-11-21 |
Family
ID=42173680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009296775A Active JP5080552B2 (ja) | 2008-12-29 | 2009-12-28 | 接合の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8158451B2 (enExample) |
| EP (1) | EP2202784B1 (enExample) |
| JP (1) | JP5080552B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2718962A1 (en) | 2011-06-10 | 2014-04-16 | Massachusetts Institute Of Technology | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
| US8525233B1 (en) * | 2012-03-23 | 2013-09-03 | Texas Instruments Incorporated | SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region |
| US9870925B1 (en) | 2012-08-15 | 2018-01-16 | Anatoly Feygenson | Quantum doping method and use in fabrication of nanoscale electronic devices |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
| JPH0666274B2 (ja) * | 1987-07-01 | 1994-08-24 | 日本電気株式会社 | ▲ｉｉｉ▼−ｖ族化合物半導体の形成方法 |
| US4825265A (en) * | 1987-09-04 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Transistor |
| DE3918094A1 (de) * | 1989-06-02 | 1990-12-06 | Aixtron Gmbh | Verfahren zur herstellung von dotierten halbleiterschichten |
| CA2031253A1 (en) | 1989-12-01 | 1991-06-02 | Kenji Aoki | Method of producing bipolar transistor |
| JP3057503B2 (ja) * | 1990-01-23 | 2000-06-26 | ソニー株式会社 | 化合物半導体の成長方法 |
| EP0505877A2 (en) * | 1991-03-27 | 1992-09-30 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
| US5332689A (en) * | 1993-02-17 | 1994-07-26 | Micron Technology, Inc. | Method for depositing low bulk resistivity doped films |
| KR960042932A (ko) * | 1995-05-08 | 1996-12-21 | 패트리시아 에이. 버랭기에리 | 반도체 물질 제조 방법 |
| DE69935024T2 (de) | 1998-02-20 | 2007-05-24 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleiterbauelement mit Bipolartransistor |
| DE19840866B4 (de) | 1998-08-31 | 2005-02-03 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren |
| US6653213B2 (en) * | 2000-12-21 | 2003-11-25 | Bookham Technology, Plc | Structure and method for doping of III-V compounds |
| JP2003059936A (ja) | 2001-08-14 | 2003-02-28 | Rohm Co Ltd | バイポーラトランジスタの製造方法 |
| US7122733B2 (en) * | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
| JP2005260040A (ja) * | 2004-02-12 | 2005-09-22 | Sony Corp | ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法 |
| DE102004013478B4 (de) * | 2004-03-18 | 2010-04-01 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Bipolartransistors mit verbessertem Basisanschluss |
| US8110469B2 (en) * | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
| DE102006011240A1 (de) * | 2006-03-10 | 2007-09-20 | Infineon Technologies Ag | Bipolartransistor und Verfahren zum Herstellen eines Bipolartransistors |
| WO2007121524A1 (en) * | 2006-04-20 | 2007-11-01 | Epitactix Pty Ltd. | Method of manufacture and resulting structures for semiconductor devices |
| JP2008021745A (ja) * | 2006-07-11 | 2008-01-31 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体積層構造体およびその成長方法 |
-
2009
- 2009-12-18 EP EP09180038.3A patent/EP2202784B1/en active Active
- 2009-12-28 JP JP2009296775A patent/JP5080552B2/ja active Active
- 2009-12-28 US US12/647,773 patent/US8158451B2/en active Active
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