JP2010171128A5 - - Google Patents
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- Publication number
- JP2010171128A5 JP2010171128A5 JP2009011027A JP2009011027A JP2010171128A5 JP 2010171128 A5 JP2010171128 A5 JP 2010171128A5 JP 2009011027 A JP2009011027 A JP 2009011027A JP 2009011027 A JP2009011027 A JP 2009011027A JP 2010171128 A5 JP2010171128 A5 JP 2010171128A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- forming
- oxidation treatment
- treatment step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims 24
- 238000000034 method Methods 0.000 claims 13
- 230000003647 oxidation Effects 0.000 claims 13
- 238000007254 oxidation reaction Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009011027A JP5166297B2 (ja) | 2009-01-21 | 2009-01-21 | 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 |
| US12/550,788 US8026187B2 (en) | 2009-01-21 | 2009-08-31 | Method of forming silicon oxide film and method of production of semiconductor memory device using this method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009011027A JP5166297B2 (ja) | 2009-01-21 | 2009-01-21 | 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010171128A JP2010171128A (ja) | 2010-08-05 |
| JP2010171128A5 true JP2010171128A5 (cg-RX-API-DMAC7.html) | 2012-03-08 |
| JP5166297B2 JP5166297B2 (ja) | 2013-03-21 |
Family
ID=42337295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009011027A Active JP5166297B2 (ja) | 2009-01-21 | 2009-01-21 | 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8026187B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5166297B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5479304B2 (ja) * | 2010-11-10 | 2014-04-23 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱酸化膜形成方法 |
| KR101854609B1 (ko) | 2011-12-27 | 2018-05-08 | 삼성전자주식회사 | 게이트 절연층의 형성 방법 |
| US10622449B2 (en) * | 2012-04-05 | 2020-04-14 | X-Fab Semiconductor Foundries Gmbh | Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device |
| EP2772934A1 (en) | 2013-02-28 | 2014-09-03 | Singulus Technologies AG | Method and system for naturally oxidizing a substrate |
| WO2016191621A1 (en) * | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
| WO2019017326A1 (ja) | 2017-07-19 | 2019-01-24 | グローバルウェーハズ・ジャパン株式会社 | 三次元構造体の製造方法、縦型トランジスタの製造方法、縦型トランジスタ用ウェ－ハおよび縦型トランジスタ用基板 |
| WO2020054038A1 (ja) | 2018-09-13 | 2020-03-19 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、及びプログラム |
| US11629409B2 (en) * | 2019-05-28 | 2023-04-18 | Applied Materials, Inc. | Inline microwave batch degas chamber |
| KR102586610B1 (ko) * | 2020-03-10 | 2023-10-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 선택적 산화 및 단순화된 사전-세정 |
| US12272531B2 (en) * | 2021-12-29 | 2025-04-08 | Applied Materials, Inc. | Dual pressure oxidation method for forming an oxide layer in a feature |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314470B2 (cg-RX-API-DMAC7.html) * | 1974-05-22 | 1978-05-17 | ||
| JPS51125698A (en) * | 1975-04-03 | 1976-11-02 | Mitsubishi Electric Corp | The formation of silicon dioxide film |
| JP3439580B2 (ja) * | 1995-09-26 | 2003-08-25 | 株式会社リコー | シリコン酸化膜の形成方法および形成装置 |
| JPH09223752A (ja) * | 1996-02-16 | 1997-08-26 | Hitachi Ltd | 不揮発性半導体記憶装置の製造方法 |
| US6461984B1 (en) * | 1997-03-18 | 2002-10-08 | Korea Advanced Institute Of Science & Technology | Semiconductor device using N2O plasma oxide and a method of fabricating the same |
| JP3233281B2 (ja) * | 1999-02-15 | 2001-11-26 | 日本電気株式会社 | ゲート酸化膜の形成方法 |
| JP3384795B2 (ja) | 1999-05-26 | 2003-03-10 | 忠弘 大見 | プラズマプロセス装置 |
| CN100347832C (zh) | 2001-01-25 | 2007-11-07 | 东京毅力科创株式会社 | 电子器件材料的制造方法 |
| JP4162601B2 (ja) | 2002-03-29 | 2008-10-08 | 東京エレクトロン株式会社 | 絶縁膜の形成方法 |
| JP4408653B2 (ja) | 2003-05-30 | 2010-02-03 | 東京エレクトロン株式会社 | 基板処理方法および半導体装置の製造方法 |
| JP4965849B2 (ja) | 2004-11-04 | 2012-07-04 | 東京エレクトロン株式会社 | 絶縁膜形成方法およびコンピュータ記録媒体 |
| JP4718189B2 (ja) * | 2005-01-07 | 2011-07-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| CN101069274B (zh) * | 2005-04-15 | 2010-05-19 | 东京毅力科创株式会社 | 半导体装置的制造方法和等离子体氮化处理方法 |
| KR100648194B1 (ko) * | 2005-07-27 | 2006-11-23 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| JP2007201507A (ja) | 2007-05-01 | 2007-08-09 | Tokyo Electron Ltd | 基板処理方法および基板処理装置 |
-
2009
- 2009-01-21 JP JP2009011027A patent/JP5166297B2/ja active Active
- 2009-08-31 US US12/550,788 patent/US8026187B2/en not_active Expired - Fee Related
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