JP2010147459A - 窒化物半導体素子 - Google Patents
窒化物半導体素子 Download PDFInfo
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- JP2010147459A JP2010147459A JP2009238773A JP2009238773A JP2010147459A JP 2010147459 A JP2010147459 A JP 2010147459A JP 2009238773 A JP2009238773 A JP 2009238773A JP 2009238773 A JP2009238773 A JP 2009238773A JP 2010147459 A JP2010147459 A JP 2010147459A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 78
- 230000008646 thermal stress Effects 0.000 claims abstract description 52
- 230000035882 stress Effects 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 4
- 230000002040 relaxant effect Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract 4
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】本発明の一実施の形態は、n型及びp型窒化物半導体層と、前記n型及びp型窒化物半導体層の間に形成され、量子障壁層と量子井戸層の交互積層構造からなる活性層と、前記n型窒化物半導体層と前記活性層の間に形成され、前記n型及びp型窒化物半導体層を成す物質より小さな熱膨脹係数を有する物質からなる熱応力緩和層と、前記熱応力緩和層と前記活性層の間に形成され、前記熱応力緩和層よりはバンドギャップエネルギーが小さく、前記量子井戸層よりはバンドギャップエネルギーが大きい物質からなり、上面に形成されたピットを有する第1層と前記第1層と前記活性層との間に前記第1層と異なる物質からなり、前記ピットを埋めるように形成された第2層とを具備する格子応力緩和層と、を含む窒化物半導体素子を提供する。
【選択図】図1
Description
102:n型窒化物半導体層
103:熱応力緩和層
104:格子応力緩和層
105:活性層
106:p型窒化物半導体層
107a、107b:n型及びp型電極
307:導電性基板
Claims (11)
- n型及びp型窒化物半導体層と、
前記n型及びp型窒化物半導体層の間に形成され、量子障壁層と量子井戸層の交互積層構造からなる活性層と、
前記n型窒化物半導体層と前記活性層の間に形成され、前記n型及びp型窒化物半導体層を成す物質より小さな熱膨脹係数を有する物質からなる熱応力緩和層と、
上面に形成されたピットを有する第1層、及び前記第1層と異なる物質からなり、前記第1層と前記活性層との間に前記ピットを埋めるように形成された第2層を具備し、前記第1層及び前記第2層は、前記熱応力緩和層と前記活性層の間に形成され、前記熱応力緩和層より小さく、かつ前記量子井戸層よりが大きいバンドギャップエネルギーの物質からなる格子応力緩和層と、を含む窒化物半導体素子。 - 前記熱応力緩和層は、Alx1Iny1Ga(1−x1)N(0<x1≦1、0≦y1≦0.01)からなることを特徴とする請求項1に記載の窒化物半導体素子。
- 前記n型及びp型窒化物半導体層は、GaNからなることを特徴とする請求項2に記載の窒化物半導体素子。
- 前記熱応力緩和層は、Alx1Iny1Ga(1−x1)N(0<x1≦1、0≦y1≦0.01)からなる第3層と、前記第3層と前記格子応力緩和層の間に形成され、前記第3層と異なる物質からなる第4層とを具備することを特徴とする請求項1から3の何れか1項に記載の窒化物半導体素子。
- 前記第4層はAlx2Ga(1−x2)N(0≦x2<1)からなることを特徴とする請求項4に記載の窒化物半導体素子。
- 前記熱応力緩和層の厚さは100nm以上であることを特徴とする請求項1から5の何れか1項に記載の窒化物半導体素子。
- 前記第1層はAlx3Iny3Ga(1−x3−y3)N(0≦x3<1、0<y3<1)からなることを特徴とする請求項1から6の何れか1項に記載の窒化物半導体素子。
- 前記第2層はAlx4Iny4Ga(1−x4−y4)N(0≦x4<1、0≦y4<y3)からなることを特徴とする請求項7に記載の窒化物半導体素子。
- 前記第1層のIn含量は前記量子井戸層のIn含量より低いことを特徴とする請求項7に記載の窒化物半導体素子。
- 前記ピットは、前記第1層の欠陥領域が除去されて形成されたことを特徴とする請求項1から9の何れか1項に記載の窒化物半導体素子。
- 前記第1層の厚さは20nm以上であることを特徴とする請求項1から10の何れか1項に記載の窒化物半導体素子。
Applications Claiming Priority (2)
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KR10-2008-0130075 | 2008-12-19 | ||
KR1020080130075A KR100990646B1 (ko) | 2008-12-19 | 2008-12-19 | 질화물 반도체 소자 |
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JP2010147459A true JP2010147459A (ja) | 2010-07-01 |
JP5246714B2 JP5246714B2 (ja) | 2013-07-24 |
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US (1) | US7973303B2 (ja) |
JP (1) | JP5246714B2 (ja) |
KR (1) | KR100990646B1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010225765A (ja) * | 2009-03-23 | 2010-10-07 | Panasonic Corp | 半導体装置及びその製造方法 |
KR101778161B1 (ko) | 2011-01-26 | 2017-09-13 | 엘지이노텍 주식회사 | 발광소자 |
US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
US10256368B2 (en) * | 2012-12-18 | 2019-04-09 | Sk Siltron Co., Ltd. | Semiconductor substrate for controlling a strain |
WO2014098321A1 (ko) * | 2012-12-18 | 2014-06-26 | 주식회사 엘지실트론 | 반도체 기판 및 그 제조 방법 |
KR20140100115A (ko) * | 2013-02-05 | 2014-08-14 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102086365B1 (ko) | 2013-04-19 | 2020-03-09 | 삼성전자주식회사 | 반도체 발광소자 |
KR102075987B1 (ko) | 2014-02-04 | 2020-02-12 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
KR102506441B1 (ko) * | 2017-12-04 | 2023-03-06 | 삼성전자주식회사 | 반도체 발광 어레이의 제조 방법 및 반도체 발광 어레이 |
Citations (2)
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JPH11243227A (ja) * | 1994-12-02 | 1999-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子の製造方法 |
JP2002134786A (ja) * | 1995-03-29 | 2002-05-10 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
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JPS617674A (ja) | 1984-06-22 | 1986-01-14 | Nec Corp | 3/5族化合物半導体発光素子 |
JPH10303510A (ja) | 1997-04-23 | 1998-11-13 | Fuji Electric Co Ltd | Iii 族窒化物半導体素子およびその製造方法 |
EP1063711B1 (en) | 1998-03-12 | 2013-02-27 | Nichia Corporation | Nitride semiconductor device |
US6423984B1 (en) | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
US6635904B2 (en) | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
JP4899632B2 (ja) | 2006-05-19 | 2012-03-21 | 日立電線株式会社 | 窒化物半導体発光ダイオード |
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JPH11243227A (ja) * | 1994-12-02 | 1999-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子の製造方法 |
JP2002134786A (ja) * | 1995-03-29 | 2002-05-10 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
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KR20100071380A (ko) | 2010-06-29 |
US20100155699A1 (en) | 2010-06-24 |
KR100990646B1 (ko) | 2010-10-29 |
JP5246714B2 (ja) | 2013-07-24 |
US7973303B2 (en) | 2011-07-05 |
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