JP2010135798A - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP2010135798A JP2010135798A JP2009276265A JP2009276265A JP2010135798A JP 2010135798 A JP2010135798 A JP 2010135798A JP 2009276265 A JP2009276265 A JP 2009276265A JP 2009276265 A JP2009276265 A JP 2009276265A JP 2010135798 A JP2010135798 A JP 2010135798A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 153
- 239000004038 photonic crystal Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】第2電極層50と、前記第2電極層の上に第2導電型半導体層21と、前記第2導電型半導体層の上に活性層22と、前記活性層の上にマスク層71及びエアーギャップ72を含む第1フォトニック結晶70が形成された第1導電型半導体層23と、及び前記第1導電型半導体層の上に設けられた第1電極層60と、を含む。前記第1フォトニック結晶は、nを前記第1導電型半導体層の屈折率とし、λを前記活性層から放出される光の波長としたときに、λ/n以上及び10λ/n以下の周期に形成される。前記エアーギャップは、前記マスク層及び第1導電型半導体層により囲まれて形成される。前記マスク層の上面は、前記第1導電型半導体層の上面と面一に配置される。
【選択図】図5
Description
Claims (20)
- 第2電極層と、
前記第2電極層の上に第2導電型半導体層と、
前記第2導電型半導体層の上に活性層と、
前記活性層の上にマスク層及びエアーギャップを含む第1フォトニック結晶が形成された第1導電型半導体層と、
前記第1導電型半導体層の上に設けられた第1電極層と、
を備えることを特徴とする発光素子。 - 前記第1フォトニック結晶は、nを前記第1導電型半導体層の屈折率とし、λを前記活性層から放出される光の波長としたときに、λ/n以上及び10λ/n以下の周期に形成されることを特徴とする請求項1に記載の発光素子。
- 前記エアーギャップは、前記マスク層及び第1導電型半導体層により囲まれて形成されることを特徴とする請求項1に記載の発光素子。
- 前記マスク層の上面は、前記第1導電型半導体層の上面と面一に配置されることを特徴とする請求項1に記載の発光素子。
- 前記エアーギャップは、前記第1電極層よりも前記第2電極層に隣接して配置されることを特徴とする請求項1に記載の発光素子。
- 前記マスク層の上面及び側面は前記第1導電型半導体層と接触し、前記マスク層の下面は前記エアーギャップに向かい合うことを特徴とする請求項1に記載の発光素子。
- 前記マスク層は、SiO2を含むことを特徴とする請求項1に記載の発光素子。
- 第2電極層と、
前記第2電極層の上に第2導電型半導体層と、
前記第2導電型半導体層の上に活性層と、
前記活性層の上に第1フォトニック結晶が形成された第1導電型半導体層と、
前記第1導電型半導体層の上に第2フォトニック結晶が形成された非伝導性半導体層と、
前記第1導電型半導体層の上に設けられた第1電極層と、
を備えることを特徴とする発光素子。 - 前記非伝導性半導体層は、前記第1導電型半導体層及び第2導電型半導体層より電気伝導性が低い物質から形成されたことを特徴とする請求項8に記載の発光素子。
- 前記非伝導性半導体層はUn−doped GaN層を含むことを特徴とする請求項9に記載の発光素子。
- 前記第2フォトニック結晶は、複数のホール又は柱を含むことを特徴とする請求項8に記載の発光素子。
- 前記第1フォトニック結晶は、前記第1導電型半導体層の内部に配置され、前記第1導電型半導体層の屈折率より低い屈折率を有することを特徴とする請求項8に記載の発光素子。
- 前記第1フォトニック結晶は、前記第1導電型半導体層の内部に一部分配置され、前記第1導電型半導体層の屈折率より低い屈折率を有することを特徴とする請求項8に記載の発光素子。
- 前記第1フォトニック結晶は、nを前記第1導電型半導体層の屈折率とし、λを前記活性層から放出される光の波長としたとき、λ/n以上及び10λ/n以下の周期に形成されたことを特徴とする請求項8に記載の発光素子。
- 前記第2フォトニック結晶は、nを前記第1導電型半導体層の屈折率とし、λを前記活性層から放出される光の波長としたとき、λ/n以上及び10λ/n以下の周期に形成されたことを特徴とする請求項8に記載の発光素子。
- 前記第1フォトニック結晶は、マスク層及びエアーギャップを含むことを特徴とする請求項8に記載の発光素子。
- 前記エアーギャップは、前記マスク層及び第1導電型半導体層により囲まれて形成されることを特徴とする請求項16に記載の発光素子。
- 前記マスク層の上面は、前記第1導電型半導体層の上面と面一に配置されることを特徴とする請求項16に記載の発光素子。
- 前記マスク層の上面及び側面は前記第1導電型半導体層と接触し、前記マスク層の下面は前記エアーギャップに向かい合うことを特徴とする請求項16に記載の発光素子。
- 前記マスク層はSiO2を含むことを特徴とする請求項16に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020080122308A KR101040462B1 (ko) | 2008-12-04 | 2008-12-04 | 발광 소자 및 그 제조방법 |
KR10-2008-0122308 | 2008-12-04 |
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JP2010135798A true JP2010135798A (ja) | 2010-06-17 |
JP5512249B2 JP5512249B2 (ja) | 2014-06-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009276265A Active JP5512249B2 (ja) | 2008-12-04 | 2009-12-04 | 発光素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8164107B2 (ja) |
EP (1) | EP2194587A3 (ja) |
JP (1) | JP5512249B2 (ja) |
KR (1) | KR101040462B1 (ja) |
CN (1) | CN101752486B (ja) |
TW (1) | TWI487142B (ja) |
Cited By (12)
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JP2013529846A (ja) * | 2010-06-24 | 2013-07-22 | ソウル オプト デバイス カンパニー リミテッド | 発光ダイオード |
US8907360B2 (en) | 2009-11-13 | 2014-12-09 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
WO2015008776A1 (ja) | 2013-07-17 | 2015-01-22 | 丸文株式会社 | 半導体発光素子及び製造方法 |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US8963183B2 (en) | 2010-07-28 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode having distributed Bragg reflector |
US9349918B2 (en) | 2011-07-12 | 2016-05-24 | Marubun Corporation | Light emitting element and method for manufacturing same |
US9806229B2 (en) | 2014-03-06 | 2017-10-31 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
KR101832314B1 (ko) * | 2011-08-30 | 2018-02-26 | 엘지이노텍 주식회사 | 발광소자 |
US9929317B2 (en) | 2015-01-16 | 2018-03-27 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
US10056526B2 (en) | 2016-03-30 | 2018-08-21 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
US10680134B2 (en) | 2015-09-03 | 2020-06-09 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
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KR100999713B1 (ko) | 2009-03-17 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101034053B1 (ko) * | 2010-05-25 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101235239B1 (ko) * | 2011-05-20 | 2013-02-21 | 서울대학교산학협력단 | 반도체 박막 구조 및 그 형성 방법 |
KR101791175B1 (ko) * | 2011-06-30 | 2017-10-27 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 패키지 |
JP5743806B2 (ja) * | 2011-08-23 | 2015-07-01 | シャープ株式会社 | 窒化物半導体発光素子、窒化物半導体発光装置、及び窒化物半導体発光素子の製造方法 |
CN102610729B (zh) * | 2012-03-21 | 2014-05-07 | 天津理工大学 | 一种嵌入自组装光子晶体薄膜的发光器件及其制备方法 |
JP2021057442A (ja) * | 2019-09-30 | 2021-04-08 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
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- 2009-12-03 CN CN200910251374.XA patent/CN101752486B/zh not_active Expired - Fee Related
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Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
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US8907360B2 (en) | 2009-11-13 | 2014-12-09 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
US10141480B2 (en) | 2009-11-13 | 2018-11-27 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed Bragg reflector and method of fabricating the same |
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Also Published As
Publication number | Publication date |
---|---|
EP2194587A2 (en) | 2010-06-09 |
US8592848B2 (en) | 2013-11-26 |
CN101752486A (zh) | 2010-06-23 |
US8164107B2 (en) | 2012-04-24 |
US20120175632A1 (en) | 2012-07-12 |
EP2194587A3 (en) | 2010-09-08 |
TW201025684A (en) | 2010-07-01 |
KR101040462B1 (ko) | 2011-06-09 |
CN101752486B (zh) | 2014-08-13 |
TWI487142B (zh) | 2015-06-01 |
JP5512249B2 (ja) | 2014-06-04 |
US20100140643A1 (en) | 2010-06-10 |
KR20100063932A (ko) | 2010-06-14 |
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