JP2010135783A - 電力用半導体モジュール - Google Patents
電力用半導体モジュール Download PDFInfo
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- JP2010135783A JP2010135783A JP2009256853A JP2009256853A JP2010135783A JP 2010135783 A JP2010135783 A JP 2010135783A JP 2009256853 A JP2009256853 A JP 2009256853A JP 2009256853 A JP2009256853 A JP 2009256853A JP 2010135783 A JP2010135783 A JP 2010135783A
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- substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】
本発明の電力用半導体モジュールは、電力用半導体素子が載置され、パターンが形成される基板と、上記基板に電源を印加する電源端子及び上記基板に信号を入出力する信号端子が絶縁樹脂材質からなる胴体部と一体型に組み立てられた一体型端子ユニットと、を含み、上記一体型端子ユニットを上記基板に載置することにより上記電源端子及び上記信号端子を上記基板に同時に連結することを特徴とする。
【選択図】図1
Description
150 電力用半導体素子
210,220,230 電源端子
212、222、232 安着部
234 制御部
236 折り曲げ部
238 端子連結部
300 一体型端子ユニット
311,311',312,312',313,313',314,314' 信号端子
390 胴体部
392 圧入部
Claims (9)
- 電力用半導体素子が載置され、パターンが形成される基板と、
前記基板に電源を印加する電源端子及び前記基板に信号を入出力する信号端子が絶縁樹脂材質からなる胴体部と一体型に組み立てられた一体型端子ユニットと、を含み、
前記一体型端子ユニットを前記基板に載置することにより、前記電源端子及び前記信号端子を前記基板に同時に連結することを特徴とする電力用半導体モジュール。 - 前記電源端子及び前記信号端子は前記胴体部と共に同一射出金型によりインサート射出されることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記電源端子及び前記信号端子を複数個具備し、
前記胴体部は前記信号端子の間、前記電源端子と前記信号端子との間に絶縁樹脂材質にして介在されることを特徴とする請求項2に記載の電力用半導体モジュール。 - 前記信号端子は前記胴体部と共に同一射出金型によりインサート射出され、前記電源端子は前記胴体部に形成された圧入部に圧入されることにより、前記一体型端子ユニットが形成されることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記基板はDBC(Direct Bonded Copper)基板であることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記電源端子は、
前記基板に連結される安着部と、前記胴体部に対する位置を制限する制限部と、外部との電気的連結のための端子連結部と、前記端子連結部を折り曲げる折り曲げ部と、を備えることを特徴とする請求項5に記載の電力用半導体モジュール。 - 前記電源端子は第1の電源端子、第2の電源端子及び第3の電源端子を備えて3相電源を前記基板に印加し、
前記第1の電源端子、前記第2の電源端子及び前記第3の電源端子のうち少なくとも一つが前記一体型端子ユニットと一体に備えられることを特徴とする請求項1に記載の電力用半導体モジュール。 - 電力用半導体素子が載置され、パターンが形成される基板と、
前記基板に電源を印加する複数の電源端子及び前記基板に信号を入出力する複数の信号端子が絶縁樹脂材質からなる胴体部と一体型に形成された一体型端子ユニットと、を含み、
前記一体型端子ユニットが前記基板に固定されることにより、前記複数の電源端子及び前記基板の電気的連結と前記複数の信号端子及び前記基板の電気的連結とが同時に行われることを特徴とする電力用半導体モジュール。 - 電力用半導体素子が載置され、パターンが形成される基板と、
前記基板に電源を印加する複数の電源端子及び前記基板に信号を入出力する複数の信号端子が絶縁樹脂材質からなる胴体部と一体型に形成された一体型端子ユニットと、を含み、
前記電源端子、前記信号端子及び前記基板は前記胴体部により互いに隔離されることにより電気的に絶縁されることを特徴とする電力用半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080122080A KR101073286B1 (ko) | 2008-12-03 | 2008-12-03 | 전력용 반도체 모듈 |
KR10-2008-0122080 | 2008-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010135783A true JP2010135783A (ja) | 2010-06-17 |
JP5133965B2 JP5133965B2 (ja) | 2013-01-30 |
Family
ID=42040536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009256853A Expired - Fee Related JP5133965B2 (ja) | 2008-12-03 | 2009-11-10 | 電力用半導体モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US8223506B2 (ja) |
EP (1) | EP2194577A1 (ja) |
JP (1) | JP5133965B2 (ja) |
KR (1) | KR101073286B1 (ja) |
CN (1) | CN101752333B (ja) |
TW (1) | TW201023720A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019116910A1 (ja) * | 2017-12-13 | 2019-06-20 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9036355B2 (en) * | 2012-03-29 | 2015-05-19 | Hamilton Sundstrand Corporation | Printed wiring board (PWB) for high amperage circuits |
KR102034717B1 (ko) * | 2013-02-07 | 2019-10-21 | 삼성전자주식회사 | 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈 |
KR101942722B1 (ko) * | 2013-10-23 | 2019-01-28 | 삼성전기 주식회사 | 전력 모듈 패키지 |
US10759658B2 (en) * | 2018-12-10 | 2020-09-01 | Texas Instruments Incorporated | Hermetic vertical shear weld wafer bonding |
CN112366196A (zh) * | 2020-10-29 | 2021-02-12 | 珠海格力电器股份有限公司 | 引脚结构及智能功率模块 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087956A (ja) * | 1994-06-23 | 1996-01-12 | Fuji Electric Co Ltd | 半導体装置の端子組立構造 |
JPH11177017A (ja) * | 1997-12-16 | 1999-07-02 | Nippon Inter Electronics Corp | 複合半導体装置 |
JP2008294275A (ja) * | 2007-05-25 | 2008-12-04 | Mitsubishi Electric Corp | 電力半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3452678B2 (ja) * | 1995-03-03 | 2003-09-29 | 三菱電機株式会社 | 配線構成体の製造方法 |
US6703703B2 (en) * | 2000-01-12 | 2004-03-09 | International Rectifier Corporation | Low cost power semiconductor module without substrate |
US7012810B2 (en) * | 2000-09-20 | 2006-03-14 | Ballard Power Systems Corporation | Leadframe-based module DC bus design to reduce module inductance |
EP1316999A1 (de) | 2001-11-28 | 2003-06-04 | Continental ISAD Electronic Systems GmbH & Co. oHG | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
DE10345768B4 (de) | 2003-10-01 | 2006-07-27 | Siemens Ag | Anschlussmittel und Verfahren zum Kontaktieren des Anschlussmittels |
JP4453498B2 (ja) * | 2004-09-22 | 2010-04-21 | 富士電機システムズ株式会社 | パワー半導体モジュールおよびその製造方法 |
JP4715283B2 (ja) * | 2005-04-25 | 2011-07-06 | 日産自動車株式会社 | 電力変換装置及びその製造方法 |
DE102006006424B4 (de) | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
JP4353951B2 (ja) * | 2006-03-06 | 2009-10-28 | 三菱電機株式会社 | 電動式パワーステアリング装置 |
US7804131B2 (en) * | 2006-04-28 | 2010-09-28 | International Rectifier Corporation | Multi-chip module |
US7911792B2 (en) * | 2008-03-11 | 2011-03-22 | Ford Global Technologies Llc | Direct dipping cooled power module and packaging |
-
2008
- 2008-12-03 KR KR1020080122080A patent/KR101073286B1/ko not_active IP Right Cessation
-
2009
- 2009-11-02 US US12/611,072 patent/US8223506B2/en active Active
- 2009-11-06 CN CN2009102096898A patent/CN101752333B/zh not_active Expired - Fee Related
- 2009-11-10 JP JP2009256853A patent/JP5133965B2/ja not_active Expired - Fee Related
- 2009-11-11 EP EP09175637A patent/EP2194577A1/en not_active Withdrawn
- 2009-11-26 TW TW098140338A patent/TW201023720A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087956A (ja) * | 1994-06-23 | 1996-01-12 | Fuji Electric Co Ltd | 半導体装置の端子組立構造 |
JPH11177017A (ja) * | 1997-12-16 | 1999-07-02 | Nippon Inter Electronics Corp | 複合半導体装置 |
JP2008294275A (ja) * | 2007-05-25 | 2008-12-04 | Mitsubishi Electric Corp | 電力半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019116910A1 (ja) * | 2017-12-13 | 2019-06-20 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JPWO2019116910A1 (ja) * | 2017-12-13 | 2020-11-26 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
US11398447B2 (en) | 2017-12-13 | 2022-07-26 | Mitsubishi Electric Corporation | Semiconductor device and method for producing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP5133965B2 (ja) | 2013-01-30 |
CN101752333A (zh) | 2010-06-23 |
US20100134994A1 (en) | 2010-06-03 |
KR20100063524A (ko) | 2010-06-11 |
TW201023720A (en) | 2010-06-16 |
KR101073286B1 (ko) | 2011-10-12 |
EP2194577A1 (en) | 2010-06-09 |
CN101752333B (zh) | 2012-01-25 |
US8223506B2 (en) | 2012-07-17 |
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