JP2010123954A - プレストレスされる補助接点ばねを有するパワー半導体モジュール - Google Patents
プレストレスされる補助接点ばねを有するパワー半導体モジュール Download PDFInfo
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- JP2010123954A JP2010123954A JP2009258910A JP2009258910A JP2010123954A JP 2010123954 A JP2010123954 A JP 2010123954A JP 2009258910 A JP2009258910 A JP 2009258910A JP 2009258910 A JP2009258910 A JP 2009258910A JP 2010123954 A JP2010123954 A JP 2010123954A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2421—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means using coil springs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49534—Multi-layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Connecting Device With Holders (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
【解決手段】ハウジング4と、圧力部材6と、少なくとも1つの接触面10及び外部に対する少なくとも1つの端子要素を有する基板8とを備えているパワー半導体モジュール2において、端子要素は、接点ばね12として、第1接触装置とばね部分16と第2接触装置18とを備えて形成されている。圧力部材は、接点ばねを配するための2つのストップ要素を有している。接点ばねの第1接触装置は、基板の接触面と導電接続している。接点ばねの第2接触装置は半円形状で形成され、接点ばねの第2接触装置の半円形状の始端及び終端に夫々少なくとも1つの成形部を有し、第2接触装置の成形部によって、圧力部材の2つのストップ要素を用いて、接点ばねは押圧され、これにより接点ばねはプレストレスを有する。
【選択図】図2
Description
4 ハウジング
6 圧力部材
8 基板
10 接触面
12 接点ばね
14 第1接触装置
16 ばね部分
18 第2接触装置
20、22 ストップ要素
24、26 成形部
28 制御回路基板
Claims (5)
- ハウジング(4)と、圧力部材(6)と、少なくとも1つの接触面(10)及び外部に対する少なくとも1つの端子要素(12)を備えている基板(8)とを有している、パワー半導体モジュール(2)であって、
端子要素(12)が、第1接触装置(14)とばね部分(16)と第2接触装置(18)とを備えている接点ばね(12)として形成され、
圧力部材(6)が端子要素(12)ごとに少なくとも2つのストップ要素(20;22)を有し、
接点ばね(12)の第1接触装置(14)が、基板(8)の接触面(10)と導電接続し、
接点ばね(12)の第2接触装置(18)が半円形状で形成され、接点ばね(12)の第2接触装置(18)の半円形状の始端及び終端に夫々少なくとも1つの成形部(24;26)が形成され、
第2接触装置(18)の成形部(24;26)により、圧力部材(6)の2つのストップ要素(20;22)を用いて、接点ばね(12)は押圧され、これにより接点ばね(12)がプレストレスを有している、パワー半導体モジュール。 - 接点ばね(12)の第2接触装置(18)の成形部(24;26)がV字形状に形成され、各V字形状の成形部(24;26)の頂点がばねの縦軸から離れて延び、2つの成形部(24;26)が互いに向かい合って位置し、2つのV字形状の成形部(24;26)のうちの少なくとも1つが接点ばね(12)のばね部分(16)と接続している、請求項1に記載のパワー半導体モジュール。
- 第1接触装置(14)がピン状或いはアーチ形状に形成されている、請求項1に記載のパワー半導体モジュール。
- 接点ばね(12)のプレストレスを用いて、接点ばね(12)が、パワー半導体モジュール(2)上に取付け可能な制御回路基板(28)の接触面に対して、位置がより精密である電気接点接続を有している、請求項1又は2に記載のパワー半導体モジュール。
- 接点ばね(12)のプレストレスを用いて、接点ばね(12)が、パワー半導体モジュール(2)の基板(8)の接触面(10)に対して、接点ばね(12)の確実且つ安定した電気接点接続を有している、請求項1又は3に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008057832A DE102008057832B4 (de) | 2008-11-19 | 2008-11-19 | Leistungshalbleitermodul mit vorgespannter Hilfskontaktfeder |
DE102008057832.0 | 2008-11-19 |
Publications (2)
Publication Number | Publication Date |
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JP2010123954A true JP2010123954A (ja) | 2010-06-03 |
JP5555477B2 JP5555477B2 (ja) | 2014-07-23 |
Family
ID=42045342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009258910A Expired - Fee Related JP5555477B2 (ja) | 2008-11-19 | 2009-11-12 | プレストレスされる補助接点ばねを有するパワー半導体モジュール |
Country Status (8)
Country | Link |
---|---|
US (1) | US8182273B2 (ja) |
EP (1) | EP2194769B1 (ja) |
JP (1) | JP5555477B2 (ja) |
KR (1) | KR101621974B1 (ja) |
CN (1) | CN101740531B (ja) |
AT (1) | ATE543375T1 (ja) |
DE (1) | DE102008057832B4 (ja) |
ES (1) | ES2379314T3 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009046403B4 (de) * | 2009-11-04 | 2015-05-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontakttechnik |
TWI424624B (zh) * | 2011-09-05 | 2014-01-21 | Frank Hayama | Conductive element and its preparation method |
US9431311B1 (en) | 2015-02-19 | 2016-08-30 | Semiconductor Components Industries, Llc | Semiconductor package with elastic coupler and related methods |
DE102016112777B4 (de) * | 2016-07-12 | 2021-03-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
DE102016115572B4 (de) * | 2016-08-23 | 2019-06-13 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtungssystem mit einer ersten und einer zweiten Leistungshalbleitereinrichtung |
DE102017208081B3 (de) * | 2017-05-12 | 2018-10-11 | centrotherm international AG | Kontaktierungsvorrichtung zur Verbindung eines Waferbootes mit einer elektrischen Leistungsversorgung |
CN108011246A (zh) * | 2017-06-28 | 2018-05-08 | 贾军霞 | 一种安全性高的打磨装置 |
CN107994398A (zh) * | 2017-06-28 | 2018-05-04 | 贾军霞 | 一种改进型打磨装置 |
DE102018102002A1 (de) | 2018-01-30 | 2019-08-01 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul |
Citations (6)
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JPH07282923A (ja) * | 1994-04-01 | 1995-10-27 | Teikoku Tsushin Kogyo Co Ltd | 圧接コネクタ |
JP2000329790A (ja) * | 1999-03-12 | 2000-11-30 | Nhk Spring Co Ltd | 導電性接触子 |
JP2006165499A (ja) * | 2004-06-08 | 2006-06-22 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008153658A (ja) * | 2006-12-13 | 2008-07-03 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
JP2008153657A (ja) * | 2006-12-13 | 2008-07-03 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
JP2008198597A (ja) * | 2007-02-08 | 2008-08-28 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4237632A1 (de) | 1992-11-07 | 1994-05-11 | Export Contor Ausenhandelsgese | Schaltungsanordnung |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
DE10306643B4 (de) * | 2003-02-18 | 2005-08-25 | Semikron Elektronik Gmbh | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102004025609B4 (de) | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102005024900B4 (de) | 2004-06-08 | 2012-08-16 | Fuji Electric Co., Ltd. | Leistungsmodul |
CN100517669C (zh) * | 2004-06-08 | 2009-07-22 | 富士电机电子技术株式会社 | 半导体装置 |
DE102006006421B4 (de) * | 2006-02-13 | 2014-09-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102007010883A1 (de) | 2007-03-06 | 2008-09-18 | Infineon Technologies Ag | Leistungshalbleiteranordnung und Verfahren zu dessen Herstellung |
-
2008
- 2008-11-19 DE DE102008057832A patent/DE102008057832B4/de not_active Expired - Fee Related
-
2009
- 2009-09-26 AT AT09012247T patent/ATE543375T1/de active
- 2009-09-26 ES ES09012247T patent/ES2379314T3/es active Active
- 2009-09-26 EP EP09012247A patent/EP2194769B1/de not_active Not-in-force
- 2009-11-12 JP JP2009258910A patent/JP5555477B2/ja not_active Expired - Fee Related
- 2009-11-19 CN CN200910222837.XA patent/CN101740531B/zh not_active Expired - Fee Related
- 2009-11-19 KR KR1020090111974A patent/KR101621974B1/ko active IP Right Grant
- 2009-11-19 US US12/622,244 patent/US8182273B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07282923A (ja) * | 1994-04-01 | 1995-10-27 | Teikoku Tsushin Kogyo Co Ltd | 圧接コネクタ |
JP2000329790A (ja) * | 1999-03-12 | 2000-11-30 | Nhk Spring Co Ltd | 導電性接触子 |
JP2006165499A (ja) * | 2004-06-08 | 2006-06-22 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008153658A (ja) * | 2006-12-13 | 2008-07-03 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
JP2008153657A (ja) * | 2006-12-13 | 2008-07-03 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
JP2008198597A (ja) * | 2007-02-08 | 2008-08-28 | Semikron Elektronik Gmbh & Co Kg | 接触バネを有するパワー半導体モジュール |
Also Published As
Publication number | Publication date |
---|---|
EP2194769A2 (de) | 2010-06-09 |
EP2194769A3 (de) | 2011-01-19 |
DE102008057832B4 (de) | 2010-07-01 |
US8182273B2 (en) | 2012-05-22 |
JP5555477B2 (ja) | 2014-07-23 |
KR101621974B1 (ko) | 2016-05-17 |
EP2194769B1 (de) | 2012-01-25 |
KR20100056410A (ko) | 2010-05-27 |
CN101740531B (zh) | 2014-05-07 |
CN101740531A (zh) | 2010-06-16 |
DE102008057832A1 (de) | 2010-05-27 |
ATE543375T1 (de) | 2012-02-15 |
US20100130035A1 (en) | 2010-05-27 |
ES2379314T3 (es) | 2012-04-24 |
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