JP2010111888A - Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 - Google Patents
Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 Download PDFInfo
- Publication number
- JP2010111888A JP2010111888A JP2008283373A JP2008283373A JP2010111888A JP 2010111888 A JP2010111888 A JP 2010111888A JP 2008283373 A JP2008283373 A JP 2008283373A JP 2008283373 A JP2008283373 A JP 2008283373A JP 2010111888 A JP2010111888 A JP 2010111888A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- ticl
- flow rate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000003860 storage Methods 0.000 title claims description 14
- 230000008021 deposition Effects 0.000 title claims description 12
- 238000000151 deposition Methods 0.000 title abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 60
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 230000007246 mechanism Effects 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 22
- 230000003247 decreasing effect Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 230000006378 damage Effects 0.000 abstract description 36
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 167
- 239000010408 film Substances 0.000 description 163
- 235000012431 wafers Nutrition 0.000 description 59
- 239000000460 chlorine Substances 0.000 description 44
- 238000005755 formation reaction Methods 0.000 description 35
- 238000002474 experimental method Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000005121 nitriding Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008283373A JP2010111888A (ja) | 2008-11-04 | 2008-11-04 | Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008283373A JP2010111888A (ja) | 2008-11-04 | 2008-11-04 | Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010111888A true JP2010111888A (ja) | 2010-05-20 |
| JP2010111888A5 JP2010111888A5 (enExample) | 2011-10-20 |
Family
ID=42300673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008283373A Pending JP2010111888A (ja) | 2008-11-04 | 2008-11-04 | Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010111888A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017022302A (ja) * | 2015-07-14 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2018137369A (ja) * | 2017-02-22 | 2018-08-30 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR20240058202A (ko) | 2021-10-05 | 2024-05-03 | 도쿄엘렉트론가부시키가이샤 | 티탄 막을 형성하는 방법 및 티탄 막을 형성하는 장치 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10298768A (ja) * | 1997-01-24 | 1998-11-10 | Applied Materials Inc | チタン層を堆積するための、高温、高堆積率の方法及び装置 |
| JP2000200761A (ja) * | 1999-01-07 | 2000-07-18 | Nec Corp | 半導体装置の製造方法 |
| JP2004158828A (ja) * | 2002-10-17 | 2004-06-03 | Tokyo Electron Ltd | 成膜方法 |
| JP2005064017A (ja) * | 2003-08-11 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理方法及び成膜方法 |
| JP2007211326A (ja) * | 2006-02-13 | 2007-08-23 | Nec Electronics Corp | 成膜装置および成膜方法 |
| WO2007125836A1 (ja) * | 2006-04-24 | 2007-11-08 | Tokyo Electron Limited | Ｔｉ膜の成膜方法 |
| JP2008202107A (ja) * | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
-
2008
- 2008-11-04 JP JP2008283373A patent/JP2010111888A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10298768A (ja) * | 1997-01-24 | 1998-11-10 | Applied Materials Inc | チタン層を堆積するための、高温、高堆積率の方法及び装置 |
| JP2000200761A (ja) * | 1999-01-07 | 2000-07-18 | Nec Corp | 半導体装置の製造方法 |
| JP2004158828A (ja) * | 2002-10-17 | 2004-06-03 | Tokyo Electron Ltd | 成膜方法 |
| JP2005064017A (ja) * | 2003-08-11 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理方法及び成膜方法 |
| JP2007211326A (ja) * | 2006-02-13 | 2007-08-23 | Nec Electronics Corp | 成膜装置および成膜方法 |
| WO2007125836A1 (ja) * | 2006-04-24 | 2007-11-08 | Tokyo Electron Limited | Ｔｉ膜の成膜方法 |
| JP2008202107A (ja) * | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017022302A (ja) * | 2015-07-14 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2018137369A (ja) * | 2017-02-22 | 2018-08-30 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR20240058202A (ko) | 2021-10-05 | 2024-05-03 | 도쿄엘렉트론가부시키가이샤 | 티탄 막을 형성하는 방법 및 티탄 막을 형성하는 장치 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11069512B2 (en) | Film forming apparatus and gas injection member used therefor | |
| JP6426893B2 (ja) | コンタクト層の形成方法 | |
| US20120183689A1 (en) | Ni film forming method | |
| US20060216950A1 (en) | Film-forming apparatus and film-forming method | |
| US9396930B2 (en) | Substrate processing apparatus | |
| JP6389608B2 (ja) | Ｔｉ膜の成膜方法 | |
| JP2012193445A (ja) | 窒化チタン膜の形成方法、窒化チタン膜の形成装置及びプログラム | |
| US20200258722A1 (en) | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device | |
| US8334208B2 (en) | Film-forming method and film-forming apparatus | |
| JP2010065309A (ja) | Ｔｉ系膜の成膜方法および記憶媒体 | |
| JP2008192835A (ja) | 成膜方法，基板処理装置，および半導体装置 | |
| JP2010016136A (ja) | 薄膜の成膜方法及び成膜装置 | |
| JP4916257B2 (ja) | 酸化膜の形成方法、酸化膜の形成装置及びプログラム | |
| JP5193494B2 (ja) | Ｔｉ膜の成膜方法および記憶媒体 | |
| JP2010111888A (ja) | Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 | |
| JP5560589B2 (ja) | 成膜方法及びプラズマ成膜装置 | |
| JP2006173236A (ja) | シリコン酸窒化膜の形成方法、形成装置及びプログラム | |
| JPWO2007125836A1 (ja) | Ｔｉ膜の成膜方法 | |
| TW202229582A (zh) | 改良阻障性質之鈦材料的氮化物覆蓋 | |
| CN110942976A (zh) | 半导体器件的制造方法及衬底处理装置 | |
| JP4810281B2 (ja) | プラズマ処理装置 | |
| KR20090060198A (ko) | 타이타늄막의 성막 방법 및 타이타늄막의 성막 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110905 |
|
| A621 | Written request for application examination |
Effective date: 20110905 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130305 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130423 |
|
| A02 | Decision of refusal |
Effective date: 20131029 Free format text: JAPANESE INTERMEDIATE CODE: A02 |