WO2007125836A1 - Ti膜の成膜方法 - Google Patents
Ti膜の成膜方法 Download PDFInfo
- Publication number
- WO2007125836A1 WO2007125836A1 PCT/JP2007/058662 JP2007058662W WO2007125836A1 WO 2007125836 A1 WO2007125836 A1 WO 2007125836A1 JP 2007058662 W JP2007058662 W JP 2007058662W WO 2007125836 A1 WO2007125836 A1 WO 2007125836A1
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- WIPO (PCT)
- Prior art keywords
- gas
- film
- frequency power
- plasma
- ticl
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 32
- 238000000151 deposition Methods 0.000 title description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 3
- 229910003074 TiCl4 Inorganic materials 0.000 abstract 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 62
- 150000002500 ions Chemical class 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Definitions
- the present invention discharges a processing gas containing TiCl gas from a shower head in a chamber.
- the present invention relates to a Ti film forming method for forming a Ti film on the surface of a substrate to be processed that is placed in a chamber.
- the circuit configuration tends to have a multilayer wiring structure. For this reason, a lower semiconductor substrate and an upper wiring are required. Embedding technology for electrical connection between layers such as contact holes that connect to layers and via holes that connect between upper and lower wiring layers is important
- Ti films such as these have been conventionally deposited using physical vapor deposition (PVD), but step coverage (step coverage) has become necessary due to device miniaturization and high integration requirements.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-197219
- a Ti film is formed by plasma CVD in which the above gas is turned into plasma and TiCl gas and H gas react.
- the present invention has been made in view of the strong situation, and when Ti is formed on a substrate to be processed having a small opening diameter and a Z or high aspect ratio hole by CVD using plasma.
- An object of the present invention is to provide a Ti film formation method that does not easily cause device damage due to charge-up damage.
- Another object of the present invention is to provide a computer readable storage medium for executing such a method.
- a substrate to be processed having a hole having a pore size of 0.13 ⁇ m or less and a hole or an aspect ratio of 10 or more is disposed in a chamber having a pair of parallel plate electrodes. Parallel to the process, while introducing a processing gas containing TiCl gas and H gas
- a method of forming a Ti film comprising: a high frequency power (W) / TiCl gas flow rate (mLZmin (sccm)) of 67 or less.
- a film forming method is provided.
- the flow rate of TiCl gas is greater than 12 mLZmin or TiC
- the partial pressure of one gas is greater than 0.23Pa.
- a computer-readable storage medium storing a control program that operates on a computer.
- the control program is executed by the method of the first aspect at the time of execution.
- a computer-readable storage medium that controls a film forming apparatus is provided.
- the unit of gas flow rate is mLZmin. Since the volume of gas is greatly changed by temperature and pressure, the value converted into the standard state is used in the present invention. Since the flow rate converted to the standard state is usually expressed in sccm (Standed Cubic Center per Minutes), sccm is also shown. Mark here The quasi-state is a state (STP) at a temperature of 0 ° C (273. 15K) and an atmospheric pressure latm (101325Pa).
- the present inventors consider that the charge-up damage is caused by the electron shading effect, and in order to reduce this electron shading effect, it is effective to reduce the amount of positive ions accumulated at the bottom of the hole. I came up with it.
- the raw material TiCl gas is ionized in the plasma to generate C1 anions.
- Electrons are consumed and the electron density decreases.
- the decrease in the electron density in the plasma reduces the sheath voltage (ion sheath voltage) that is caused by the difference between positive ions and electron mobility. Since the sheath voltage is the force that accelerates positive ions in the direction perpendicular to the hole bottom, the decrease in the sheath voltage reduces the probability that positive ions will reach the bottom of the hole. (Charge) accumulation can be reduced.
- Pw high frequency power
- Vpp plasma potential
- PD plasma density
- the density of positive ions that cause up-damage decreases, and this action can also reduce the accumulation of positive ions at the bottom of the hole.
- the high-frequency power (Pw) increases, the plasma density increases when Vpp is constant in the above equation. Therefore, the density of positive ions is increased, and the positive ions accumulated at the bottom of the holes increase and charge occurs. Promotes upda- tion. For this reason, it is better that the high frequency power is low.
- the value of (power of high-frequency power ZTiCl gas flow rate) is a predetermined value or less, specifically 6
- FIG. 1 is a schematic cross-sectional view showing an example of a Ti film forming apparatus used for carrying out a Ti film forming method according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view showing an example of the structure of a semiconductor wafer applied to the present invention.
- FIG. 3 is a diagram for explaining a mechanism that causes charge-up damage due to an electronic shading effect.
- FIG. 1 is a schematic cross-sectional view showing an example of a Ti film forming apparatus used for carrying out a Ti film forming method according to an embodiment of the present invention.
- the Ti film forming apparatus 100 is configured as a plasma CVD film forming apparatus that performs CVD film formation while forming plasma by forming a high-frequency electric field on parallel plate electrodes.
- the Ti film forming apparatus 100 has a substantially cylindrical chamber 1. Inside the chamber 1, a susceptor 2 for horizontally supporting a wafer W as a substrate to be processed is arranged in a state of being supported by a cylindrical support member 3 provided at the lower center of the susceptor. A guide ring 4 for guiding the wafer W is provided on the outer edge of the susceptor 2. In addition, a heater 5 is embedded in the susceptor 2, and the heater 5 is supplied with power from a heater power source 6 to heat the wafers W and W to be processed to a predetermined temperature. An electrode 8 that functions as a lower electrode of a parallel plate electrode is embedded in the vicinity of the surface of the susceptor 2, and this electrode 8 is grounded.
- the susceptor 2 can be made of ceramics such as A1N. In this case, a ceramic heater is formed.
- a shower head 10 that also functions as an upper electrode of a parallel plate electrode is provided on the top wall la of the chamber 1 via an insulating member 9.
- the shower head 10 includes an upper block body 10a, a middle block body 10b, and a lower block body 10c, and has a substantially disk shape.
- the upper block body 10a has a horizontal portion 10d that constitutes a sharer head main body together with the middle block body 10b and the lower block body 10c, and an annular support portion 10e continuous above the outer periphery of the horizontal portion 10d, and is formed in a concave shape. ing.
- the entire shower head 10 is supported by the annular support portion 10e.
- Discharge holes 17 and 18 for discharging gas are alternately formed in the lower block body 10c.
- the first block On the upper surface of the upper block body 10a, the first block The gas inlet 11 and the second gas inlet 12 are formed.
- a large number of gas passages 13 are branched from the first gas introduction port 11.
- a gas passage 15 is formed in the middle block body 10b, and the gas passage 13 communicates with these gas passages 15 via a communication passage 13a extending horizontally. Further, the gas passage 15 communicates with the discharge hole 17 of the lower block body 10c.
- a large number of gas passages 14 are branched from the second gas introduction port 12.
- Gas passages 16 are formed in the middle block body 10b, and the gas passages 14 communicate with the gas passages 16.
- the gas passage 16 is connected to a communication passage 16a extending horizontally in the middle block body 10b, and the communication passage 16a communicates with a number of discharge holes 18 of the lower block body 10c.
- the first and second gas inlets 11 and 12 are connected to the gas line of the gas supply mechanism 20.
- the gas supply mechanism 20 supplies a C1F gas that is a cleaning gas.
- TiCl gas supply source 22 that supplies TiCl gas, which is Ti compound gas, Ar gas is supplied
- Ar gas supply source 23 reducing gas H gas supply H gas supply source 24, nitriding gas
- Source 21 has C1F gas supply line 27 and 30b force TiCl gas supply 22 has TiCl gas
- H gas supply line 30 power NH gas supply source 25 has NH gas supply line 30a
- Each is connected. Although not shown, it also has an N2 gas supply source. Each gas line is provided with a mass flow controller 32 and two valves 31 sandwiching the mass flow controller 32! /.
- the first gas inlet 11 has a TiCl gas supply line extending from a TiCl gas supply source 22.
- TiCl gas supply line 28 is connected, and this TiCl gas supply line 28 extends from the C1F gas supply source 21.
- Ar gas supply line 29 extending from C1F gas supply line 27 and Ar gas supply source 23
- the second gas inlet 12 has an H gas extending from an H gas supply source 24.
- H gas supply line 30 is connected, and this H gas supply line 30 has NH gas supply
- H gas from source 24 passes through H gas supply gas line 30
- the gas inlet 12 to the shower head 10 From the gas inlet 12 to the shower head 10, the gas passes through the gas passages 14, 16 and is discharged from the discharge hole 18 into the chamber 1. That is, the shower head 10 is completely free of TiCl gas and H gas.
- It may be a premix type that supplies them into the chamber 1.
- a high frequency power supply 34 is connected to the shower head 10 via a matching unit 33, and this high frequency power supply 34 also supplies high frequency power to the shower head 10. By supplying high-frequency power from the high-frequency power source 34, the gas supplied into the chamber 1 through the shower head 10 is turned into plasma to perform film formation.
- a heater 45 for heating the shower head 10 is provided in the horizontal portion 10d of the upper block body 10a of the shower head 10.
- a heater power supply 46 is connected to the heater 45, and the shower head 10 is heated to a desired temperature by supplying power to the heater 45 from the heater power supply 46.
- a heat insulating member 47 is provided in the concave portion of the upper block body 10a in order to increase the heating efficiency by the heater 45.
- a circular hole 35 is formed in the center of the bottom wall lb of the chamber 1, and an exhaust chamber 36 that protrudes downward is provided in the bottom wall lb so as to cover the hole 35. .
- An exhaust pipe 37 is connected to the side surface of the exhaust chamber 36, and an exhaust device 38 is connected to the exhaust pipe 37. By operating the exhaust device 38, the inside of the chamber 1 can be depressurized to a predetermined degree of vacuum.
- the susceptor 2 is provided with three (two only shown) wafer support pins 39 for supporting the wafer W to be moved up and down so as to be able to project and retract with respect to the surface of the susceptor 2. 39 is fixed to the support plate 40.
- the wafer support pins 39 are lifted and lowered via the support plate 40 by a drive mechanism 41 such as an air cylinder.
- a wafer transfer chamber (not shown) provided adjacent to the chamber 1 and A loading / unloading port 42 for loading / unloading the wafer W and a gate valve 43 for opening / closing the loading / unloading port 42 are provided.
- the constituent parts of the Ti film forming apparatus 100 are connected to and controlled by the control part 50 that also has a computer power.
- the control unit 50 also includes a keyboard on which the process manager manages command input to manage the Ti film deposition apparatus 100, and a display that visualizes and displays the operating status of the Ti film deposition apparatus 100.
- a user interface 51 is connected, which is also of equal power.
- the control unit 50 includes a control program for realizing various processes executed by the Ti film deposition apparatus 100 under the control of the control unit 50, and each configuration of the Ti film deposition apparatus 100 according to the processing conditions.
- a storage unit 52 that stores a program for causing the unit to execute processing, that is, a recipe, is connected.
- the recipe may be stored in a hard disk or semiconductor memory, or may be set at a predetermined position in the storage unit 52 while being stored in a portable storage medium such as a CDROM or DVD. Furthermore, the recipe may be appropriately transmitted from another device via, for example, a dedicated line. Then, if necessary, an arbitrary recipe is called from the storage unit 52 by an instruction from the user interface 51 and is executed by the control unit 50, so that the Ti film forming apparatus 10 is controlled under the control of the control unit 50. The desired processing at 0 is performed.
- a semiconductor wafer W on which a Ti film is to be formed has a structure shown in FIG. That is, the gate electrode 103 is formed on the silicon substrate 101 via the gate insulating film 102, the interlayer insulating film 104 and the metal wiring layer 105 are formed around and on the gate electrode 103, and the metal wiring layer 105 and the gate electrode 103 Are connected by embedded wiring 106. On the metal wiring layer 105, an interlayer insulating film 108 in which a via hole 107 is formed is formed. Further, a trench 109 is formed in the interlayer insulating film 104.
- the inside of the chamber 1 is adjusted in the same manner as the external atmosphere connected via the gate valve 43, and then the gate valve 43 is opened.
- the wafer transfer chamber force (not shown) in a vacuum state has the above-described structure via the loading / unloading port 42.
- the wafer W to be loaded is loaded into the chamber 1.
- the wafer W is preheated while supplying Ar gas into the chamber 1.
- Ar gas, H gas When the temperature of wafer W is almost stabilized, Ar gas, H gas
- Pre-flow is performed by flowing a predetermined flow rate through the pre-flow line, not shown.
- the film flow is switched to the film forming line while maintaining the same gas flow rate and pressure, and these gases are introduced into the chamber 1 through the shower head 10.
- high frequency power is applied to the shower head 10 from the high frequency power source 34, whereby Ar gas, H gas, and TiCl gas introduced into the chamber 1 are turned into plasma.
- the heater 5 is applied to the shower head 10 from the high frequency power source 34, whereby Ar gas, H gas, and TiCl gas introduced into the chamber 1 are turned into plasma.
- Ti gas is deposited on the wafer W by the reaction of the gas converted into plasma on the wafer W that is heated each time.
- the via hole 107 with a small opening diameter and a large aspect ratio, the force that makes it difficult for the electron e to reach the bottom of the hole. Because the ion i is accelerated by the ion sheath S and reaches the bottom of the hole, the bottom of the via hole 107 is positive. (Electronic shading effect). On the other hand, since the trench 109 is wide, electrons e that move isotropically easily reach the bottom thereof. Therefore, a potential difference is generated between the bottom of the via hole 107 and the bottom of the trench 109, and an electric field is generated in the gate insulating film 102. This phenomenon becomes more prominent as the aperture diameter of via hole 107 is smaller and the aspect ratio is larger.
- the present inventors have been able to reduce the amount of accumulation by reducing the driving force that positive ions reach the bottom of the hole. I found it effective.
- the power (W) / TiCl gas flow rate (mLZmin (sccm)) of high frequency power should be set to 67 or less.
- the source gas, TiCl gas is ionized in the plasma
- the electrons present in the horra are consumed and the electron density is reduced.
- the decrease in the electron density in the plasma reduces the sheath voltage (ion sheath voltage) caused by the difference between positive ions and electron mobility. Since the sheath voltage is a force that accelerates positive ions in the direction perpendicular to the bottom of the hole (via hole 107), the probability that positive ions will reach the bottom of the hole will be reduced by decreasing this sheath voltage. Accumulation of positive ions (positive charges) can be reduced.
- Pw high frequency power
- Vpp plasma potential
- PD plasma density
- the density of positive ions that cause up-damage decreases, and this action can also reduce the accumulation of positive ions at the bottom of the hole.
- the high-frequency power (p w ) increases, the plasma density increases when Vpp is constant in the above equation. Therefore, the density of positive ions is increased and the number of positive ions accumulated at the bottom of the hole increases. It promotes charge-up damage. For this reason, it is better that the high frequency power is low. In this way, from the viewpoint of suppressing charge-up damage, the TiCl flow rate or partial pressure is high and the high-frequency power is high. From such a viewpoint, it is better that the lower one is (the power of high frequency power ZTici gas flow
- the value of (4 quantity) shall be less than the predetermined value.
- n (sccm), high frequency power Based on 800W, TiCl gas flow rate is less than 12mLZmin
- TiCl gas partial pressure is greater than 0.23Pa and high frequency power is greater than 800W
- the flow rate of TiCl gas is greater than 12 mLZmin (sccm) or
- the partial pressure of TiCl gas is larger than 0.23Pa and the high frequency power is smaller than 800W.
- the flow rate of TiCl gas is 12-20 mLZmin (sccm) or TiCl gas
- the partial pressure of 4 4 is 0.23 to 17.54 Pa and the high frequency power is less than 200 to 800 W. From this point of view, the power of high frequency power (W) ZTiCl gas flow rate (mLZmin (sccm))
- a preferred range of values is 10-67.
- the Ti film formation time is appropriately set according to the film thickness to be obtained.
- the Ti film may be nitrided as necessary.
- the TiCl gas is stopped and the H gas is removed.
- a high-frequency power is applied to plasma the process gas, and the surface of the Ti thin film deposited on the wafer and W is nitrided by the plasma process gas.
- Ti film may not be deposited on the sidewalls of contact holes and via holes. Therefore, if plasma is generated during nitriding, charge-up damage may occur. From the viewpoint of avoiding this, it is preferable to perform nitriding without forming plasma.
- Preferable conditions for the nitriding treatment are as follows.
- Ar gas flow rate 2000mLZmin (sccm) or less, preferably 800 ⁇ 2000mLZmin (sec m)
- this step is not essential, it is preferably performed from the viewpoint of preventing oxidation of the Ti film.
- the inside of the chamber 1 is adjusted in the same manner as the external atmosphere connected via the gate valve 43, and then the gate valve 43 is opened and the loading / unloading port 42 is opened. Unload the wafer W to the wafer transfer chamber.
- the chamber 1 is cleaned. This process is performed in a state where no wafer is present in the chamber 1 from the C1F gas supply source 21 to the C1F gas supply line 27 and in the chamber 1.
- plasma CVD is performed by simultaneously supplying TiCl gas, H gas, and Ar gas.
- an SFD process may be used that alternates between and. Instead, supply TiCl gas and Ar gas.
- the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as a liquid crystal display (LCD) substrate.
- LCD liquid crystal display
- the present invention is applicable to a Ti film forming method for forming a Ti film on the surface of a substrate to be processed.
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Abstract
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JP2008513179A JPWO2007125836A1 (ja) | 2006-04-24 | 2007-04-20 | Ti膜の成膜方法 |
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JP2006-119528 | 2006-04-24 |
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JP (1) | JPWO2007125836A1 (ja) |
KR (1) | KR20080007496A (ja) |
TW (1) | TW200745370A (ja) |
WO (1) | WO2007125836A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010111888A (ja) * | 2008-11-04 | 2010-05-20 | Tokyo Electron Ltd | Ti膜の成膜方法および成膜装置、ならびに記憶媒体 |
JP2010263126A (ja) * | 2009-05-08 | 2010-11-18 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
JP2018059173A (ja) * | 2016-10-07 | 2018-04-12 | 東京エレクトロン株式会社 | 成膜方法 |
Families Citing this family (2)
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JP5233734B2 (ja) * | 2008-02-20 | 2013-07-10 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置及び成膜方法 |
WO2009119627A1 (ja) | 2008-03-28 | 2009-10-01 | 東京エレクトロン株式会社 | 金属系膜の成膜方法および記憶媒体 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001040477A (ja) * | 1999-06-11 | 2001-02-13 | Applied Materials Inc | 窒化チタンの厚膜を堆積する方法 |
JP2004197219A (ja) * | 2002-12-05 | 2004-07-15 | Tokyo Electron Ltd | 成膜方法 |
JP2004285469A (ja) * | 2003-01-31 | 2004-10-14 | Tokyo Electron Ltd | 載置台、処理装置及び処理方法 |
JP2004343032A (ja) * | 2003-04-21 | 2004-12-02 | Tokyo Electron Ltd | 被処理体の昇降機構及び処理装置 |
-
2007
- 2007-04-20 JP JP2008513179A patent/JPWO2007125836A1/ja active Pending
- 2007-04-20 KR KR1020077028046A patent/KR20080007496A/ko not_active Application Discontinuation
- 2007-04-20 WO PCT/JP2007/058662 patent/WO2007125836A1/ja active Application Filing
- 2007-04-24 TW TW096114472A patent/TW200745370A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001040477A (ja) * | 1999-06-11 | 2001-02-13 | Applied Materials Inc | 窒化チタンの厚膜を堆積する方法 |
JP2004197219A (ja) * | 2002-12-05 | 2004-07-15 | Tokyo Electron Ltd | 成膜方法 |
JP2004285469A (ja) * | 2003-01-31 | 2004-10-14 | Tokyo Electron Ltd | 載置台、処理装置及び処理方法 |
JP2004343032A (ja) * | 2003-04-21 | 2004-12-02 | Tokyo Electron Ltd | 被処理体の昇降機構及び処理装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010111888A (ja) * | 2008-11-04 | 2010-05-20 | Tokyo Electron Ltd | Ti膜の成膜方法および成膜装置、ならびに記憶媒体 |
JP2010263126A (ja) * | 2009-05-08 | 2010-11-18 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
JP2018059173A (ja) * | 2016-10-07 | 2018-04-12 | 東京エレクトロン株式会社 | 成膜方法 |
Also Published As
Publication number | Publication date |
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TW200745370A (en) | 2007-12-16 |
JPWO2007125836A1 (ja) | 2009-09-10 |
KR20080007496A (ko) | 2008-01-21 |
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