JP2010109356A5 - - Google Patents
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- Publication number
- JP2010109356A5 JP2010109356A5 JP2009229202A JP2009229202A JP2010109356A5 JP 2010109356 A5 JP2010109356 A5 JP 2010109356A5 JP 2009229202 A JP2009229202 A JP 2009229202A JP 2009229202 A JP2009229202 A JP 2009229202A JP 2010109356 A5 JP2010109356 A5 JP 2010109356A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- substrate
- semiconductor substrate
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 13
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009229202A JP5681354B2 (ja) | 2008-10-02 | 2009-10-01 | Ｓｏｉ基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008257762 | 2008-10-02 | ||
| JP2008257762 | 2008-10-02 | ||
| JP2009229202A JP5681354B2 (ja) | 2008-10-02 | 2009-10-01 | Ｓｏｉ基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010109356A JP2010109356A (ja) | 2010-05-13 |
| JP2010109356A5 true JP2010109356A5 (OSRAM) | 2012-11-01 |
| JP5681354B2 JP5681354B2 (ja) | 2015-03-04 |
Family
ID=42076126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009229202A Expired - Fee Related JP5681354B2 (ja) | 2008-10-02 | 2009-10-01 | Ｓｏｉ基板の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8871610B2 (OSRAM) |
| JP (1) | JP5681354B2 (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8357974B2 (en) * | 2010-06-30 | 2013-01-22 | Corning Incorporated | Semiconductor on glass substrate with stiffening layer and process of making the same |
| FR2964111B1 (fr) * | 2010-08-31 | 2013-01-25 | Commissariat Energie Atomique | Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote |
| TWI500118B (zh) | 2010-11-12 | 2015-09-11 | Semiconductor Energy Lab | 半導體基底之製造方法 |
| FR2993095B1 (fr) * | 2012-07-03 | 2014-08-08 | Commissariat Energie Atomique | Detachement d’une couche autoportee de silicium <100> |
| JP6061251B2 (ja) * | 2013-07-05 | 2017-01-18 | 株式会社豊田自動織機 | 半導体基板の製造方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JP3250673B2 (ja) * | 1992-01-31 | 2002-01-28 | キヤノン株式会社 | 半導体素子基体とその作製方法 |
| JP3352340B2 (ja) | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| KR100232886B1 (ko) * | 1996-11-23 | 1999-12-01 | 김영환 | Soi 웨이퍼 제조방법 |
| US6287988B1 (en) | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
| SG63832A1 (en) | 1997-03-26 | 1999-03-30 | Canon Kk | Substrate and production method thereof |
| US6143628A (en) | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
| JPH10284431A (ja) * | 1997-04-11 | 1998-10-23 | Sharp Corp | Ｓｏｉ基板の製造方法 |
| US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
| US5985742A (en) * | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
| US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JPH1197379A (ja) | 1997-07-25 | 1999-04-09 | Denso Corp | 半導体基板及び半導体基板の製造方法 |
| JP3395661B2 (ja) | 1998-07-07 | 2003-04-14 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP3233281B2 (ja) | 1999-02-15 | 2001-11-26 | 日本電気株式会社 | ゲート酸化膜の形成方法 |
| JP2000349266A (ja) * | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法 |
| US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
| JP4450126B2 (ja) | 2000-01-21 | 2010-04-14 | 日新電機株式会社 | シリコン系結晶薄膜の形成方法 |
| FR2894990B1 (fr) * | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
| JP4330815B2 (ja) | 2001-03-26 | 2009-09-16 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
| US6979630B2 (en) * | 2002-08-08 | 2005-12-27 | Isonics Corporation | Method and apparatus for transferring a thin layer of semiconductor material |
| US7176528B2 (en) | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| JP2006120965A (ja) | 2004-10-25 | 2006-05-11 | Elpida Memory Inc | ゲート酸化膜の形成方法 |
| JP2007043121A (ja) | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7820495B2 (en) | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7625783B2 (en) | 2005-11-23 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and method for manufacturing the same |
| EP1835533B1 (en) * | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
| FR2938120B1 (fr) * | 2008-10-31 | 2011-04-08 | Commissariat Energie Atomique | Procede de formation d'une couche monocristalline dans le domaine micro-electronique |
-
2009
- 2009-09-29 US US12/568,768 patent/US8871610B2/en not_active Expired - Fee Related
- 2009-10-01 JP JP2009229202A patent/JP5681354B2/ja not_active Expired - Fee Related
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