JP2010087037A - Multilayer wiring board for differential transmission - Google Patents

Multilayer wiring board for differential transmission Download PDF

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JP2010087037A
JP2010087037A JP2008251662A JP2008251662A JP2010087037A JP 2010087037 A JP2010087037 A JP 2010087037A JP 2008251662 A JP2008251662 A JP 2008251662A JP 2008251662 A JP2008251662 A JP 2008251662A JP 2010087037 A JP2010087037 A JP 2010087037A
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inner layer
connection pad
wiring
distance
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JP5323435B2 (en
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Maroaki Maetani
麿明 前谷
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer wiring board for differential transmission, which attains the excellent differential transmission by matching a differential impedance in an inter-layer connection conductor. <P>SOLUTION: An inter-center distance between a penetration conductor 10c and a penetration conductor 11c is made to be different from the inter-center distance between a connection pad 4a and a connection pad 4b. When the differential impedance is higher than the differential impedances of inner layer wiring 11a and inner layer wiring 10a in the case where the inter-center distance between the penetration conductor 10c and the penetration conductor 11c is equal to the inter-center distance between the connection pad 4a and the connection pad 4b, the inter-center distance between the penetration conductor 10c and the penetration conductor 11c is made to be smaller than the inter-center distance between the connection pad 4a and the connection pad 4b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、高速で作動する半導体素子および光半導体素子などの半導体集積回路を搭載するのに好適な差動伝送用多層配線基板に関する。   The present invention relates to a multilayer wiring board for differential transmission suitable for mounting a semiconductor integrated circuit such as a semiconductor element and an optical semiconductor element that operate at high speed.

従来、高速で作動するIC、LSI等の半導体素子を実装封止したパッケージ実装部品や表面実装対応の電子部品の内部配線構造においては、高速の高周波信号を正確かつ効率よく伝播させることを目的として差動伝送線路構造が採用されていることが少なくない。従来の差動伝送配線構造では、支持体および絶縁体を兼ねた誘電体基板の主面に二本を一対とする信号用導体が並置して設けられている。   Conventionally, in the internal wiring structure of package mounting parts and surface mountable electronic parts that are mounted and sealed with semiconductor elements such as ICs and LSIs that operate at high speed, the purpose is to transmit high-speed high-frequency signals accurately and efficiently. A differential transmission line structure is often adopted. In a conventional differential transmission wiring structure, a pair of signal conductors are provided side by side on the main surface of a dielectric substrate that also serves as a support and an insulator.

差動伝送は、このような信号用導体対の各々における電圧もしくは電流を互いに逆相とし、かつその差を負荷で消費させる構成をとることにより、負荷への電圧もしくは電流の供給を倍増できる。また、信号用導体対の各々に対してそれぞれ等しい外来雑音が印加されるような場合において、負荷において電圧もしくは電流の差をとることから、印加された外来雑音が相殺されるという利点をも有しており、高速パルスを伝送する有効な手段と目されてきている。   The differential transmission can double the supply of voltage or current to the load by adopting a configuration in which the voltage or current in each of the signal conductor pairs is out of phase with each other and the difference is consumed by the load. In addition, in the case where the same external noise is applied to each of the signal conductor pairs, there is an advantage that the applied external noise is canceled because a difference in voltage or current is taken at the load. Therefore, it has been regarded as an effective means for transmitting high-speed pulses.

これまでの差動伝送配線構造としては誘電体基板主面に信号用導体が並置して設けられている構造、すなわち並行マイクロストリップ線路の形態、あるいはかかる形態を内層化した並行ストリップ線路の形態をとっていることが多かったが、並置することによって配線占有面積が増大する傾向があった。   The conventional differential transmission wiring structure has a structure in which signal conductors are arranged in parallel on the main surface of the dielectric substrate, that is, a parallel microstrip line form or a parallel strip line form in which such a form is formed as an inner layer. In many cases, the wiring occupation area tends to increase by juxtaposition.

半導体素子における電極端子ピッチの狭小化のためには、たとえば複数の誘電体層からなる多層配線基板において中間の誘電体層を介して互いに基板の厚み方向に対向する一対の導体によって構成される差動伝送配線構造、すなわちブロードサイド結合ストリップ線路が好適である。   In order to narrow the electrode terminal pitch in a semiconductor element, for example, in a multilayer wiring board composed of a plurality of dielectric layers, a difference constituted by a pair of conductors facing each other in the thickness direction of the board via an intermediate dielectric layer. A dynamic transmission wiring structure, i.e. a broadside coupled stripline, is preferred.

ブロードサイド結合ストリップ線路を適用した場合、誘電体層数は増えるものの誘電体基板主面に投影した配線密度は一本分となることから狭ピッチへの対応が可能になる。また、対となる信号用導体間の結合が、配線幅同士で結合するため、並行マイクロストリップ線路のような配線厚み同士での結合に比べてより密となるために、クロストーク特性の向上も期待できる(たとえば特許文献1参照)。   When the broadside coupled strip line is applied, the number of dielectric layers is increased, but the wiring density projected onto the main surface of the dielectric substrate is one, so that it is possible to cope with a narrow pitch. In addition, since the coupling between the signal conductors to be paired is coupled between the wiring widths, the coupling between the wiring thicknesses such as the parallel microstrip line becomes denser, so that the crosstalk characteristics are improved. It can be expected (see, for example, Patent Document 1).

ところでパッケージ部品あるいは電子部品においては、中間層を介して互いに対向する信号用配線を、表層である基板主面に引き出すことにより、実装用配線基板における電極端子との電気的な接続を実現することができる。このため従来のブロードサイド結合ストリップ線路は、ビア導体のような配線層間を接続する厚み方向の層間接続導体を介して表層の実装用パッドに接続される。   By the way, in package parts or electronic parts, electrical connection with the electrode terminals on the mounting wiring board is realized by drawing the signal wirings facing each other through the intermediate layer to the main surface of the board as the surface layer. Can do. For this reason, the conventional broadside coupling strip line is connected to the surface mounting pad via the interlayer connection conductor in the thickness direction connecting the wiring layers such as via conductors.

このとき、層間接続導体は、差動伝送配線構造を構成する一対の配線導体の各端部と、実装用パッドとを接続する。実装用パッドは、実装基板側の実装用パッドに合わせたピッチ(中心間距離)で設けられる。層間接続導体は、実装用パッドの中心位置に、層間接続導体の中心を合わせるように設けられる(特許文献1参照)。   At this time, the interlayer connection conductor connects each end of the pair of wiring conductors constituting the differential transmission wiring structure and the mounting pad. The mounting pads are provided at a pitch (center distance) that matches the mounting pads on the mounting substrate side. The interlayer connection conductor is provided so that the center of the interlayer connection conductor is aligned with the center position of the mounting pad (see Patent Document 1).

特開平8−46136号公報JP-A-8-46136

ブロードサイド結合ストリップ線路に接続される一対の層間接続導体は、層間接続導体間の結合により差動インピーダンスが決定する。一対の層間接続導体の差動インピーダンスは、導体の大きさ、誘電体層の誘電率、導体間の距離などによって決まることになる。   The differential impedance of the pair of interlayer connection conductors connected to the broadside coupling strip line is determined by the coupling between the interlayer connection conductors. The differential impedance of the pair of interlayer connection conductors is determined by the size of the conductor, the dielectric constant of the dielectric layer, the distance between the conductors, and the like.

導体間の距離が従来のように、実装用パッドのピッチによって決まってしまうと、一対の層間接続導体の差動インピーダンスは、一対の配線導体における差動インピーダンスと整合がとれなくなり、配線導体と層間接続導体との接続部分で差動信号の反射が発生して伝送特性が劣化してしまうという問題があった。   If the distance between the conductors is determined by the pitch of the mounting pads as in the conventional case, the differential impedance of the pair of interlayer connection conductors cannot be matched with the differential impedance of the pair of wiring conductors. There is a problem that differential signal reflection occurs at the connection portion with the connection conductor and the transmission characteristics deteriorate.

本発明の目的は、層間接続導体での差動インピーダンスを整合し、良好な差動伝送が可能な差動伝送用多層配線基板を提供することである。   An object of the present invention is to provide a differential transmission multilayer wiring board capable of matching differential impedances in interlayer connection conductors and enabling good differential transmission.

本発明は、誘電体基板と、前記誘電体基板の内層に、互いに結合可能に設けられる第1の信号用導体および第2の信号用導体から成る配線導体対と、前記誘電体基板の主面に設けられ、第1の信号用導体に接続される第1の実装用パッドと第2の信号用導体に接続される第2の実装用パッドとからなる実装用パッド対と、誘電体基板の厚み方向に第1の信号用導体と第1の実装用パッドとを接続する第1の層間接続導体と、誘電体基板の厚み方向に第2の信号用導体と第2の実装用パッドとを接続する第2の層間接続導体とからなる層間接続導体対と、を有する差動伝送用多層配線基板であって、前記第1の実装用パッドと前記第2の実装用パッドの中心間距離と、前記第1の層間接続導体と前記第2の層間接続導体の中心間距離とが異なるように構成される差動伝送用多層配線基板である。   The present invention provides a dielectric substrate, a wiring conductor pair including a first signal conductor and a second signal conductor provided on the inner layer of the dielectric substrate so as to be coupled to each other, and a main surface of the dielectric substrate A mounting pad pair including a first mounting pad connected to the first signal conductor and a second mounting pad connected to the second signal conductor, and a dielectric substrate. A first interlayer connecting conductor for connecting the first signal conductor and the first mounting pad in the thickness direction; and a second signal conductor and a second mounting pad in the thickness direction of the dielectric substrate. A multilayer wiring board for differential transmission having a pair of interlayer connection conductors including a second interlayer connection conductor to be connected, the distance between the centers of the first mounting pad and the second mounting pad; The distance between the centers of the first interlayer connection conductor and the second interlayer connection conductor is different. Sea urchin is a differential transmission multilayer wiring board constructed.

また本発明は、前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体とが、前記誘電体基板の厚み方向に並設される。   According to the present invention, in the wiring conductor pair, the first signal conductor and the second signal conductor are arranged in parallel in the thickness direction of the dielectric substrate.

また本発明は、前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体とが、延伸方向に直交する断面形状が矩形状であり、それぞれの矩形の長辺同士が対向するように並設される。   Further, according to the present invention, in the wiring conductor pair, the first signal conductor and the second signal conductor have a rectangular cross-sectional shape orthogonal to the extending direction, and the long sides of the respective rectangles are It is arranged side by side so as to face each other.

また本発明は、前記誘電体基板が、第1の誘電体層と、前記第1の誘電体層を挟むようにそれぞれ積層される第2の誘電体層および第3の誘電体層とを含み、
前記第1の信号用導体が、前記第1の誘電体層と前記第2の誘電体層との間に設けられ、
前記第2の信号用導体が、前記第1の誘電体層と前記第3の誘電体層との間に設けられ、
前記第1の層間接続導体が前記第2の誘電体層を貫通するように設けられ、
前記第2の層間接続導体が前記第1の誘電体層および前記第2の誘電体層を貫通するように設けられる。
In the invention, it is preferable that the dielectric substrate includes a first dielectric layer and a second dielectric layer and a third dielectric layer that are stacked so as to sandwich the first dielectric layer. ,
The first signal conductor is provided between the first dielectric layer and the second dielectric layer;
The second signal conductor is provided between the first dielectric layer and the third dielectric layer;
The first interlayer connection conductor is provided so as to penetrate the second dielectric layer;
The second interlayer connection conductor is provided so as to penetrate the first dielectric layer and the second dielectric layer.

また本発明は、前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体とが、前記誘電体基板の主面に平行な方向に並設される。   According to the present invention, in the wiring conductor pair, the first signal conductor and the second signal conductor are arranged in parallel in a direction parallel to the main surface of the dielectric substrate.

本発明によれば、誘電体基板の内層には、互いに結合可能に設けられる第1の信号用導体および第2の信号用導体から成る配線導体対が設けられ、誘電体基板の主面には、第1の信号用導体に接続される第1の実装用パッドと第2の信号用導体に接続される第2の実装用パッドとからなる実装用パッド対が設けられる。さらに、誘電体基板の内層に誘電体基板の厚み方向に第1の信号用導体と第1の実装用パッドとを接続する第1の層間接続導体と、誘電体基板の厚み方向に第2の信号用導体と第2の実装用パッドとを接続する第2の層間接続導体とからなる層間接続導体対が設けられ、第1の実装用パッドと第2の実装用パッドの中心間距離と、第1の層間接続導体と第2の層間接続導体の中心間距離とが異なるように構成される。   According to the present invention, the inner layer of the dielectric substrate is provided with a pair of wiring conductors composed of a first signal conductor and a second signal conductor that are provided so as to be coupled to each other. A mounting pad pair including a first mounting pad connected to the first signal conductor and a second mounting pad connected to the second signal conductor is provided. Furthermore, a first interlayer connection conductor connecting the first signal conductor and the first mounting pad in the thickness direction of the dielectric substrate to the inner layer of the dielectric substrate, and a second layer in the thickness direction of the dielectric substrate. An interlayer connection conductor pair including a second interlayer connection conductor connecting the signal conductor and the second mounting pad; and a center-to-center distance between the first mounting pad and the second mounting pad; The distance between the centers of the first interlayer connection conductor and the second interlayer connection conductor is different.

これにより、層間接続導体対の差動インピーダンスが、配線導体対の差動インピーダンスと整合がとれるので、配線導体と層間接続導体との接続部分での差動信号の反射を抑制して、良好な差動伝送が可能となる。   As a result, the differential impedance of the interlayer connection conductor pair can be matched with the differential impedance of the wiring conductor pair, so that reflection of the differential signal at the connection portion between the wiring conductor and the interlayer connection conductor is suppressed, and a good result is obtained. Differential transmission is possible.

以下、図面を参照しながら本発明を実施するための形態を、複数の形態について説明する。各形態で先行する形態で説明している事項に対応している部分には同一の参照符を付し、重複する説明を略する場合がある。構成の一部のみを説明している場合、構成の他の部分は、先行して説明している形態と同様とする。   Hereinafter, a plurality of embodiments for carrying out the present invention will be described with reference to the drawings. Portions corresponding to the matters described in the preceding forms in each embodiment are denoted by the same reference numerals, and overlapping description may be omitted. When only a part of the configuration is described, the other parts of the configuration are the same as those described in the preceding section.

図1は、本発明の第1の実施形態であるパッケージ2を示す斜視図である。図2は、パッケージ2を示す平面図である。図3は、パッケージ2を示す正面図である。図4は、パッケージ2を示す側面図である。   FIG. 1 is a perspective view showing a package 2 according to the first embodiment of the present invention. FIG. 2 is a plan view showing the package 2. FIG. 3 is a front view showing the package 2. FIG. 4 is a side view showing the package 2.

図1では、差動伝送用多層配線基板であるパッケージ2が実装ボード3に実装された状態を示し、パッケージ2に設けられた接続パッド4と、実装ボード3に設けられた接続パッド5とが、はんだボール12によって電気的に接続されて実装されている。   FIG. 1 shows a state where a package 2 which is a multilayer wiring board for differential transmission is mounted on a mounting board 3. A connection pad 4 provided on the package 2 and a connection pad 5 provided on the mounting board 3 are shown in FIG. The solder balls 12 are electrically connected and mounted.

パッケージ2は、誘電体基板である誘電体基板6と、内層線路対7と、接続パッド4と有し、実装ボード3は、樹脂基板8と、表層線路対9と、接続パッド5とを有する。   The package 2 has a dielectric substrate 6 which is a dielectric substrate, an inner layer line pair 7 and a connection pad 4, and the mounting board 3 has a resin substrate 8, a surface layer line pair 9 and a connection pad 5. .

パッケージ2は、図示しない半導体素子が実装され、半導体素子の内部配線と内層線路対7とが接続されて内層線路対7を高周波信号が伝送される。内層線路対7は、内層線路7bと、内層線路7aからなり、差動伝送配線構造を構成する。   The package 2 is mounted with a semiconductor element (not shown), and the internal wiring of the semiconductor element and the inner layer line pair 7 are connected to transmit a high-frequency signal through the inner layer line pair 7. The inner layer line pair 7 includes an inner layer line 7b and an inner layer line 7a, and constitutes a differential transmission wiring structure.

内層線路7bは、さらに第1の信号用導体である内層配線11aとランド11bと第1の層間接続導体である貫通導体11cからなり、内層線路7aは、さらに第2の信号用導体である内層配線10aとランド10bと第2の層間接続導体である貫通導体10cからなる。   The inner layer line 7b further includes an inner layer wiring 11a that is a first signal conductor, a land 11b, and a through conductor 11c that is a first interlayer connection conductor. The inner layer line 7a is further an inner layer that is a second signal conductor. The wiring 10a, the land 10b, and the through conductor 10c as the second interlayer connection conductor.

内層線路対7は、誘電体基板6の内層に、互いに結合可能に設けられる差動伝送配線対であり、誘電体基板6の厚み方向に並設されるブロードサイド結合ストリップ線路である。内層配線10aと内層配線11aとは、誘電体基板6の厚み方向に誘電体を挟んで対向して設けられており、パッケージ2を上面視したとき、内層配線10aと内層配線11aとが重なるように配置されている。   The inner layer line pair 7 is a differential transmission wiring pair provided on the inner layer of the dielectric substrate 6 so as to be coupled to each other, and is a broad-side coupled strip line provided in parallel in the thickness direction of the dielectric substrate 6. The inner layer wiring 10a and the inner layer wiring 11a are provided to face each other with a dielectric in the thickness direction of the dielectric substrate 6, and the inner layer wiring 10a and the inner layer wiring 11a overlap when the package 2 is viewed from above. Is arranged.

また、図3に示すように、内層配線10aと内層配線11aとは、その延伸方向に直交する断面形状、すなわち図3における紙面に平行な面の断面形状が、矩形状に形成されており、内層配線10aと内層配線11aとそれぞれの矩形の長辺同士が対向するように並設される。このように対向することで、内層配線10aと内層配線11aとは、幅方向に広がる面同士が対向することになり、信号伝送時により強い結合を得ることができる。   Further, as shown in FIG. 3, the inner layer wiring 10a and the inner layer wiring 11a have a cross-sectional shape orthogonal to the extending direction thereof, that is, a cross-sectional shape of a plane parallel to the paper surface in FIG. The inner layer wiring 10a and the inner layer wiring 11a are arranged in parallel so that the long sides of the respective rectangles face each other. By facing in this way, the inner layer wiring 10a and the inner layer wiring 11a face each other in the width direction, and stronger coupling can be obtained during signal transmission.

内層線路対7を伝送される高周波信号において、電圧もしくは電流を互いに逆相とし、かつその差を負荷で消費させることにより、負荷への電圧もしくは電流の供給を倍増できるとともに、内層線路対7の各々に対してそれぞれ等しい外来雑音が印加されるような場合に、負荷において電圧または電流の差をとることから、印加された外来雑音が相殺される。   In the high-frequency signal transmitted through the inner layer line pair 7, the voltage or current is reversed in phase with each other and the difference is consumed by the load, so that the supply of voltage or current to the load can be doubled. When the same external noise is applied to each of them, the applied external noise is canceled by taking a voltage or current difference at the load.

内層線路7aを接続パッド4へと引き出すためには、内層配線10aの端部において、ランド10bと貫通導体10cにより厚み方向に延びて接続パッド4へと接続する垂直配線部分を設ける。また、内層線路7bを接続パッド4へと引き出すためには、内層配線11aの端部において、ランド11bと貫通導体11cにより厚み方向に延びて接続パッド4へと接続する垂直配線部分を設ける。   In order to pull out the inner layer line 7a to the connection pad 4, a vertical wiring portion extending in the thickness direction by the land 10b and the through conductor 10c and connected to the connection pad 4 is provided at the end of the inner layer wiring 10a. Further, in order to pull out the inner layer line 7b to the connection pad 4, a vertical wiring portion that extends in the thickness direction by the land 11b and the through conductor 11c and is connected to the connection pad 4 is provided at the end of the inner layer wiring 11a.

接続パッド4は、内層配線10aとランド10bおよび貫通導体10cを介して接続される接続パッド4aと、内層配線11aとランド11bおよび貫通導体11cを介して接続される接続パッド4bとで構成される実装用パッド対である。   The connection pad 4 includes a connection pad 4a connected to the inner layer wiring 10a via the land 10b and the through conductor 10c, and a connection pad 4b connected to the inner layer wiring 11a via the land 11b and the through conductor 11c. This is a mounting pad pair.

誘電体基板6は、第1の誘電体層6aと、第2の誘電体層6bと、第3の誘電体層6cの3層が、第1の誘電体層6aを挟むようにそれぞれ第2の誘電体層6bおよび第3の誘電体層6cが設けられ、実装ボード3に対向する側から第2の誘電体層6b、第1の誘電体層6a、第3の誘電体層6cの順に積層される。   The dielectric substrate 6 includes a second dielectric layer 6a, a second dielectric layer 6b, and a third dielectric layer 6c sandwiching the first dielectric layer 6a. The dielectric layer 6b and the third dielectric layer 6c are provided, and the second dielectric layer 6b, the first dielectric layer 6a, and the third dielectric layer 6c are arranged in this order from the side facing the mounting board 3. Laminated.

内層配線11aは、第1の誘電体層6aと第2の誘電体層6bとの間に設けられ、内層配線10aは、第1の誘電体層6aと第3の誘電体層6cとの間に設けられる。   The inner layer wiring 11a is provided between the first dielectric layer 6a and the second dielectric layer 6b, and the inner layer wiring 10a is formed between the first dielectric layer 6a and the third dielectric layer 6c. Provided.

貫通導体11cは、第2の誘電体層6bを貫通して接続パッド4bに接続し、貫通導体10cは、第1の誘電体層6aおよび第2の誘電体層6bを貫通して接続パッド4aに接続する。   The through conductor 11c penetrates the second dielectric layer 6b and connects to the connection pad 4b. The through conductor 10c penetrates the first dielectric layer 6a and the second dielectric layer 6b and connects to the connection pad 4a. Connect to.

従来の技術であれば、貫通導体10cと貫通導体11cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離と同じとなり、貫通導体10cおよび貫通導体11cが、接続パッド4aおよび接続パッド4bの中心に接続することになる。しかしながら、接続パッド4aと接続パッド4bの中心間距離は、実装ボード3の接続パッド5の中心間距離に一致させているだけであって伝送特性についてはほとんど考慮されていない。したがって、接続パッド4aおよび接続パッド4bの中心間距離に、貫通導体10cと貫通導体11cの中心間距離を合わせると貫通導体10cと貫通導体11cの差動インピーダンスは、内層配線11aと内層配線10aの配線導体対の差動インピーダンスからずれることになる。   In the conventional technique, the distance between the centers of the through conductor 10c and the through conductor 11c is the same as the distance between the centers of the connection pad 4a and the connection pad 4b, and the through conductor 10c and the through conductor 11c are connected to the connection pad 4a and the connection pad. It will be connected to the center of 4b. However, the distance between the centers of the connection pad 4a and the connection pad 4b is merely matched with the distance between the centers of the connection pads 5 of the mounting board 3, and transmission characteristics are hardly considered. Therefore, when the distance between the centers of the through conductor 10c and the through conductor 11c is adjusted to the distance between the centers of the connection pad 4a and the connection pad 4b, the differential impedance of the through conductor 10c and the through conductor 11c is the difference between the inner layer wiring 11a and the inner layer wiring 10a. It will deviate from the differential impedance of the wiring conductor pair.

本発明では、貫通導体10cと貫通導体11cの中心間距離と、接続パッド4aと接続パッド4bの中心間距離とが異なるように構成される。   In the present invention, the distance between the centers of the through conductor 10c and the through conductor 11c is different from the distance between the centers of the connection pad 4a and the connection pad 4b.

本実施形態では、たとえば、貫通導体10cと貫通導体11cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離よりも小さくなるように構成している。差動インピーダンスは、差動伝送構造として予め設計値が決まっており、予め決められた設計値に整合させるために、貫通導体10cと貫通導体11cの中心間距離を調整する。   In the present embodiment, for example, the distance between the centers of the through conductor 10c and the through conductor 11c is configured to be smaller than the distance between the centers of the connection pad 4a and the connection pad 4b. The differential impedance has a predetermined design value for the differential transmission structure, and the distance between the centers of the through conductor 10c and the through conductor 11c is adjusted in order to match the predetermined design value.

本実施形態のように、ブロードサイド結合ストリップ線路の場合、内層配線11aと内層配線10aとが異なる誘電体層間に配設されているので、貫通導体10cと貫通導体11cの中心間距離は、内層配線11aと内層配線10aの長さを変更することで容易に調整することができる。   In the case of the broadside coupled strip line as in the present embodiment, the inner layer wiring 11a and the inner layer wiring 10a are disposed between different dielectric layers, and therefore the distance between the centers of the through conductor 10c and the through conductor 11c is the inner layer. It can be easily adjusted by changing the length of the wiring 11a and the inner layer wiring 10a.

本実施形態では、貫通導体10cと貫通導体11cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離よりも小さくなるように構成しているが、これに限らず、貫通導体10cと貫通導体11cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離よりも大きくなるように構成してもよく、貫通導体10cと貫通導体11cの差動インピーダンスが予め決められた値に整合可能であれば、貫通導体10cと貫通導体11cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離とどのように異なっていてもよい。   In the present embodiment, the distance between the centers of the through conductor 10c and the through conductor 11c is configured to be smaller than the distance between the centers of the connection pad 4a and the connection pad 4b. The distance between the centers of the through conductors 11c may be larger than the distance between the centers of the connection pads 4a and 4b, and the differential impedance between the through conductors 10c and the through conductors 11c is set to a predetermined value. If alignment is possible, the distance between the centers of the through conductors 10c and the through conductors 11c may be different from the distance between the centers of the connection pads 4a and the connection pads 4b.

貫通導体10cと貫通導体11cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離と同じとした場合に、差動インピーダンスが内層配線11aと内層配線10aの差動インピーダンスよりも高い場合には、貫通導体10cと貫通導体11cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離よりも小さくすればよく、貫通導体10cと貫通導体11cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離と同じとした場合に、作動インピーダンスが内層配線11aと内層配線10aの差動インピーダンスよりも低い場合には、貫通導体10cと貫通導体11cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離よりも大きくすればよい。   When the distance between the centers of the through conductor 10c and the through conductor 11c is the same as the distance between the centers of the connection pad 4a and the connection pad 4b, the differential impedance is higher than the differential impedance of the inner layer wiring 11a and the inner layer wiring 10a. For this, the distance between the centers of the through conductor 10c and the through conductor 11c may be made smaller than the distance between the centers of the connection pad 4a and the connection pad 4b, and the distance between the centers of the through conductor 10c and the through conductor 11c may be set to the connection pad 4a. When the operating impedance is lower than the differential impedance between the inner layer wiring 11a and the inner layer wiring 10a, the distance between the centers of the through conductor 10c and the through conductor 11c is connected. What is necessary is just to make it larger than the center distance of the pad 4a and the connection pad 4b.

このようにして、貫通導体10cと貫通導体11cの差動インピーダンスを、内層配線11aと内層配線10aの差動インピーダンスに整合させることで、内層配線11aと内層配線10aと、貫通導体10cと貫通導体11との接続部分での差動信号の反射を抑制して、良好な差動伝送が可能となる。   In this way, by matching the differential impedance of the through conductor 10c and the through conductor 11c with the differential impedance of the inner layer wiring 11a and the inner layer wiring 10a, the inner layer wiring 11a, the inner layer wiring 10a, the through conductor 10c, and the through conductor Thus, the differential signal reflection at the connection portion with the terminal 11 is suppressed, and good differential transmission is possible.

なお、貫通導体10cと貫通導体11cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離よりも大きくする場合も、内層配線11aと内層配線10aの長さを変更することで容易に実現できる。   Even when the distance between the centers of the through conductor 10c and the through conductor 11c is larger than the distance between the centers of the connection pad 4a and the connection pad 4b, it is easy to change the lengths of the inner layer wiring 11a and the inner layer wiring 10a. realizable.

内層線路対7が、ブロードサイド結合ストリップ線路を実現するために、内層配線10aと内層配線11aとは、誘電体層6中で異なる高さの配線層に設けられ、接続パッド4は、内層配線10aと内層配線11aの延伸方向に並んで設けられる。   In order for the inner layer line pair 7 to realize a broadside coupled strip line, the inner layer wiring 10a and the inner layer wiring 11a are provided in wiring layers having different heights in the dielectric layer 6, and the connection pad 4 10a and the inner layer wiring 11a are provided side by side in the extending direction.

接続パッド4は、誘電体層6の樹脂基板8と対向する主面6aの周縁に設けられる接続パッド群の一部を構成する。接続パッド4aおよび接続パッド4bは、内層配線10aと内層配線11aの延伸方向に並んで設けられ、誘電体層6に設けられる接続パッド群のうち、最外周のパッドと最外周から2列目のパッドとで構成される。ここで、最外周のパッドが、接続パッド4aに相当し、最外周から2列目のパッドが、接続パッド4bに相当する。   The connection pad 4 constitutes a part of a connection pad group provided on the periphery of the main surface 6 a of the dielectric layer 6 facing the resin substrate 8. The connection pad 4a and the connection pad 4b are provided side by side in the extending direction of the inner layer wiring 10a and the inner layer wiring 11a. Of the connection pad group provided in the dielectric layer 6, the outermost pad and the second row from the outermost row It consists of a pad. Here, the outermost pad corresponds to the connection pad 4a, and the second row pad from the outermost periphery corresponds to the connection pad 4b.

このような接続パッド4の構成は、伝送信号の周波数が10GHz以上となる高周波信号の伝送に好適である。   Such a configuration of the connection pad 4 is suitable for transmission of a high-frequency signal having a transmission signal frequency of 10 GHz or more.

一方、実装ボード3では、表層線路対9によって差動伝送配線構造を構成する。
実装ボード3では、パッケージ2の誘電体基板6の主面6aに対向する樹脂基板8の主面8aに接続パッド5が設けられており、パッケージ2の接続パッド4と実装ボード3の接続パッド5とがはんだボール12によって電気的に接続され、パッケージ2の内層線路対7を伝送する高周波信号が、接続パッド4,5およびはんだボール12を介して表層線路対9を伝送する。
On the other hand, in the mounting board 3, a differential transmission wiring structure is configured by the surface layer line pair 9.
In the mounting board 3, the connection pads 5 are provided on the main surface 8 a of the resin substrate 8 facing the main surface 6 a of the dielectric substrate 6 of the package 2. Are electrically connected by the solder balls 12, and a high-frequency signal transmitted through the inner layer line pair 7 of the package 2 is transmitted through the surface pads 9 through the connection pads 4 and 5 and the solder balls 12.

表層線路対9は、表層線路9aと表層線路9bが、樹脂基板8の主面8aに、互いに結合可能に並設され、並行マイクロストリップ線路を構成する。   In the surface layer line pair 9, the surface layer line 9a and the surface layer line 9b are arranged in parallel on the main surface 8a of the resin substrate 8 so as to be coupled to each other, thereby forming a parallel microstrip line.

表層線路9aおよび表層線路9bは、樹脂基板8の主面8a上に設けられるので、表層線路9aが接続パッド5aに接続するまでは、表層線路9aおよび表層線路9bは、樹脂基板8の主面8a上で平行に延び、配線厚み同士で結合しながら高周波信号を差動伝送する。   Since the surface layer line 9a and the surface layer line 9b are provided on the main surface 8a of the resin substrate 8, the surface layer line 9a and the surface layer line 9b are the main surface of the resin substrate 8 until the surface layer line 9a is connected to the connection pad 5a. A high-frequency signal is differentially transmitted while extending in parallel on 8a and being coupled with each other in wiring thickness.

図2に示すように、パッケージ2と実装ボード3とを上面視したときに、表層線路9aと、内層線路7aと内層線路7bとは同一直線上に配置される。さらに、接続パッド5aと接続パッド5bとは、この同一直線上に配置される。また、接続パッド5から表層線路対9が伸びる方向と、接続パッド4から内層線路対7が伸びる方向とが反対方向となるように、内層線路対7、表層線路対9および接続パッド4,5を配置してパッケージ2と実装ボード3とを接続する。   As shown in FIG. 2, when the package 2 and the mounting board 3 are viewed from above, the surface layer line 9a, the inner layer line 7a, and the inner layer line 7b are arranged on the same straight line. Further, the connection pad 5a and the connection pad 5b are arranged on the same straight line. Also, the inner layer line pair 7, the surface layer line pair 9, and the connection pads 4, 5 are arranged so that the direction in which the surface layer line pair 9 extends from the connection pad 5 and the direction in which the inner layer line pair 7 extends from the connection pad 4 are opposite. And the package 2 and the mounting board 3 are connected.

接続パッド5は、樹脂基板8の主面8aに設けられ、表層線路対9の表層線路9aの端部に設けられた接続パッド5aと、表層線路対9の表層線路9bの端部に設けられた接続パッド5bで構成される。   The connection pad 5 is provided on the main surface 8 a of the resin substrate 8, and is provided on the end of the surface layer line 9 b of the surface layer line pair 9 and the connection pad 5 a provided on the end part of the surface layer line 9 a of the surface layer line pair 9. The connection pad 5b.

図2に示すように、接続パッド5は、接続パッド5aと接続パッド5bとが、表層線路9aと表層線路9bの延伸方向に沿って設けられる。本実施形態では、表層線路9aが屈曲することなく直線的に接続パッド5aに接続しており、この表層線路9aの延長線上に接続パッド5aの中心と接続パッド5bの中心とが並ぶように設けられている。   As shown in FIG. 2, the connection pad 5 includes a connection pad 5a and a connection pad 5b along the extending direction of the surface layer line 9a and the surface layer line 9b. In the present embodiment, the surface layer line 9a is linearly connected to the connection pad 5a without bending, and the center of the connection pad 5a and the center of the connection pad 5b are arranged on the extended line of the surface layer line 9a. It has been.

表層線路9bは、表層線路9aが接続パッド5aに接続するまでの線路並列部においては、表層線路9aと同じ長さを保っているが表層線路9aが接続パッド5aに接続した先では、接続パッド5aの奥に設けられた接続パッド5bまでさらに延びて接続する。表層線路9bは、樹脂基板8の主面8a上に設けられているため、接続パッド5bに接続するためには、接続パッド5aの近傍を、接続パッド5aに沿うように迂回して配置される。   The surface layer line 9b maintains the same length as the surface layer line 9a in the line parallel portion until the surface layer line 9a is connected to the connection pad 5a, but the connection pad is connected to the surface layer line 9a where the surface layer line 9a is connected to the connection pad 5a. Further extending to the connection pad 5b provided at the back of 5a is connected. Since the surface layer line 9b is provided on the main surface 8a of the resin substrate 8, in order to connect to the connection pad 5b, the vicinity of the connection pad 5a is arranged around the connection pad 5a. .

次に、本発明の第2の実施形態について説明する。
図5は、第2の実施形態の第1態様であるパッケージ2を示す図である。図5(a)は、パッケージ2の平面図を示し、図5(b)は、パッケージ2の正面図を示す。
Next, a second embodiment of the present invention will be described.
FIG. 5 is a diagram illustrating a package 2 that is a first aspect of the second embodiment. FIG. 5A shows a plan view of the package 2, and FIG. 5B shows a front view of the package 2.

第1の実施形態では、内層線路対7の内層線路7aと内層線路7bとが、誘電体基板6の厚み方向に並設されるブロードサイド結合ストリップ線路としていたが、本実施形態では、内層線路対15を構成する内層線路15aおよび内層線路15bが、誘電体基板6内において、互いに結合可能に並設され、並行マイクロストリップ線路を構成している。   In the first embodiment, the inner layer line 7a and the inner layer line 7b of the inner layer line pair 7 are broad-side coupled strip lines arranged in parallel in the thickness direction of the dielectric substrate 6, but in this embodiment, the inner layer line Inner layer line 15a and inner layer line 15b constituting pair 15 are juxtaposed in dielectric substrate 6 so as to be coupled to each other, thereby forming a parallel microstrip line.

内層線路15aは、第1の信号用導体である内層配線16aとランド16bと第1の層間接続導体である貫通導体16cからなり、内層線路15bは、第2の信号用導体である内層配線17aとランド17bと第2の層間接続導体である貫通導体17cからなる。   The inner layer line 15a includes an inner layer wiring 16a that is a first signal conductor, a land 16b, and a through conductor 16c that is a first interlayer connection conductor. The inner layer line 15b is an inner layer wiring 17a that is a second signal conductor. And a land 17b and a through conductor 17c as a second interlayer connection conductor.

誘電体基板6は、第1の誘電体層6aと、第2の誘電体層6bと、第3の誘電体層6cの3層で構成され、内層配線16aおよび内層配線17aは、第1の誘電体層6aと第3の誘電体層6cとの間に設けられる。   The dielectric substrate 6 is composed of three layers of a first dielectric layer 6a, a second dielectric layer 6b, and a third dielectric layer 6c. The inner layer wiring 16a and the inner layer wiring 17a It is provided between the dielectric layer 6a and the third dielectric layer 6c.

貫通導体16cおよび貫通導体17cは、第1の誘電体層6aおよび第2の誘電体層6bを貫通して接続パッド4aおよび接続パッド4bに接続する。   The through conductor 16c and the through conductor 17c penetrate the first dielectric layer 6a and the second dielectric layer 6b and connect to the connection pad 4a and the connection pad 4b.

図5に示す第1態様では、内層配線16aと内層配線17aの中心間距離よりも、貫通導体16cと貫通導体17cの中心間距離を小さくし、貫通導体16cと貫通導体17cの中心間距離を接続パッド4aと接続パッド4bの中心間距離とを異ならせている。   In the first mode shown in FIG. 5, the distance between the centers of the through conductor 16c and the through conductor 17c is made smaller than the distance between the centers of the inner layer wiring 16a and the inner layer wiring 17a, and the distance between the centers of the through conductor 16c and the through conductor 17c is reduced. The distance between the centers of the connection pad 4a and the connection pad 4b is made different.

本実施形態のように、並行マイクロストリップ線路の場合、内層配線16aと内層配線17aとが同じ誘電体層間に配設されているので、貫通導体16cと貫通導体17cの中心間距離は、内層配線16aがランド16bに接続する部分で屈曲し、内層配線17aがランド17cに接続する部分で屈曲することで調整することができる。   In the case of a parallel microstrip line as in the present embodiment, since the inner layer wiring 16a and the inner layer wiring 17a are disposed between the same dielectric layers, the distance between the centers of the through conductor 16c and the through conductor 17c is the inner layer wiring. Adjustment can be made by bending 16a at a portion connecting to the land 16b and bending the inner layer wiring 17a at a portion connecting to the land 17c.

本態様では、内層配線16aと内層配線17aとが、互いに近づくように屈曲して所定の中心間距離を有するランド16bおよびランド17bに接続し、同じ中心間距離で貫通導体16cと貫通導体17cが接続パッド4aおよび接続パッド4bに接続する。このとき、貫通導体16cと貫通導体17cの中心間距離は、接続パッド4aと接続パッド4bの中心間距離よりも小さい。   In this embodiment, the inner layer wiring 16a and the inner layer wiring 17a are bent so as to approach each other and are connected to the land 16b and the land 17b having a predetermined center distance, and the through conductor 16c and the through conductor 17c are connected at the same center distance. Connect to the connection pad 4a and the connection pad 4b. At this time, the distance between the centers of the through conductor 16c and the through conductor 17c is smaller than the distance between the centers of the connection pad 4a and the connection pad 4b.

図6は、第2の実施形態の第2態様であるパッケージ2を示す図である。図6(a)は、パッケージ2の平面図を示し、図6(b)は、パッケージ2の正面図を示す。   FIG. 6 is a diagram illustrating a package 2 that is a second aspect of the second embodiment. FIG. 6A shows a plan view of the package 2, and FIG. 6B shows a front view of the package 2.

図6に示す第2態様では、内層配線16aと内層配線17aの中心間距離よりも、貫通導体16cと貫通導体17cの中心間距離を大きくし、貫通導体16cと貫通導体17cの中心間距離を接続パッド4aと接続パッド4bの中心間距離とを異ならせている。   In the second mode shown in FIG. 6, the distance between the centers of the through conductor 16c and the through conductor 17c is made larger than the distance between the centers of the inner layer wiring 16a and the inner layer wiring 17a, and the distance between the centers of the through conductor 16c and the through conductor 17c is set. The distance between the centers of the connection pad 4a and the connection pad 4b is made different.

本実施形態のように、並行マイクロストリップ線路の場合、内層配線16aと内層配線17aとが同じ誘電体層間に配設されているので、貫通導体16cと貫通導体17cの中心間距離は、内層配線16aがランド16bに接続する部分で屈曲し、内層配線17aがランド17cに接続する部分で屈曲することで調整することができる。   In the case of a parallel microstrip line as in the present embodiment, since the inner layer wiring 16a and the inner layer wiring 17a are disposed between the same dielectric layers, the distance between the centers of the through conductor 16c and the through conductor 17c is the inner layer wiring. Adjustment can be made by bending 16a at a portion connecting to the land 16b and bending the inner layer wiring 17a at a portion connecting to the land 17c.

本態様では、内層配線16aと内層配線17aとが、互いに離れるように屈曲して所定の中心間距離を有するランド16bおよびランド17bに接続し、同じ中心間距離で貫通導体16cと貫通導体17cが接続パッド4aおよび接続パッド4bに接続する。このとき、貫通導体16cと貫通導体17cの中心間距離は、接続パッド4aと接続パッド4bの中心間距離よりも小さい。   In this embodiment, the inner layer wiring 16a and the inner layer wiring 17a are bent so as to be separated from each other and connected to the land 16b and the land 17b having a predetermined center distance, and the through conductor 16c and the through conductor 17c are connected at the same center distance. Connect to the connection pad 4a and the connection pad 4b. At this time, the distance between the centers of the through conductor 16c and the through conductor 17c is smaller than the distance between the centers of the connection pad 4a and the connection pad 4b.

図7は、第2の実施形態の第3態様であるパッケージ2を示す図である。図7(a)は、パッケージ2の平面図を示し、図7(b)は、パッケージ2の正面図を示す。   FIG. 7 is a diagram illustrating a package 2 that is a third aspect of the second embodiment. FIG. 7A shows a plan view of the package 2, and FIG. 7B shows a front view of the package 2.

図7に示す第3態様では、内層配線16aと内層配線17aの中心間距離と、貫通導体16cと貫通導体17cの中心間距離が同じであり、貫通導体16cと貫通導体17cの中心間距離を接続パッド4aと接続パッド4bの中心間距離とを異ならせている。   In the third mode shown in FIG. 7, the distance between the centers of the inner layer wiring 16a and the inner layer wiring 17a is the same as the distance between the centers of the through conductor 16c and the through conductor 17c, and the distance between the centers of the through conductor 16c and the through conductor 17c is the same. The distance between the centers of the connection pad 4a and the connection pad 4b is made different.

内層配線16aと内層配線17aの差動インピーダンスと貫通導体16cと貫通導体17cの差動インピーダンスが整合されていれば、内層配線16aと内層配線17aの中心間距離と、貫通導体16cと貫通導体17cの中心間距離が同じとなる場合がある。このような場合、内層配線16aと内層配線17aの中心間距離と、接続パッド4aと接続パッド4bの中心間距離とが異なるのであれば、貫通導体16cと貫通導体17cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離と異ならせることになる。   If the differential impedance of the inner layer wiring 16a and the inner layer wiring 17a and the differential impedance of the through conductor 16c and the through conductor 17c are matched, the distance between the centers of the inner layer wiring 16a and the inner layer wiring 17a, the through conductor 16c, and the through conductor 17c. May have the same center-to-center distance. In such a case, if the distance between the centers of the inner layer wiring 16a and the inner layer wiring 17a is different from the distance between the centers of the connection pad 4a and the connection pad 4b, the distance between the centers of the through conductor 16c and the through conductor 17c is This is different from the center-to-center distance between the pad 4a and the connection pad 4b.

本態様では、内層配線16aと内層配線17aとが、同じ中心距離を保持したまま、同じ中心間距離を有するランド16bおよびランド17bに接続し、同じ中心間距離で貫通導体16cと貫通導体17cが接続パッド4aおよび接続パッド4bに接続する。このとき、貫通導体16cと貫通導体17cの中心間距離は、接続パッド4aと接続パッド4bの中心間距離よりも小さい。   In this embodiment, the inner layer wiring 16a and the inner layer wiring 17a are connected to the land 16b and the land 17b having the same center distance while maintaining the same center distance, and the through conductor 16c and the through conductor 17c are connected at the same center distance. Connect to the connection pad 4a and the connection pad 4b. At this time, the distance between the centers of the through conductor 16c and the through conductor 17c is smaller than the distance between the centers of the connection pad 4a and the connection pad 4b.

本実施形態も第1の実施形態と同様に、貫通導体16cと貫通導体17cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離よりも小さくなるように構成しているが、これに限らず、貫通導体16cと貫通導体17cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離よりも大きくなるように構成してもよく、貫通導体16cと貫通導体17cの差動インピーダンスが予め決められた値に整合可能であれば、貫通導体16cと貫通導体17cの中心間距離が、接続パッド4aと接続パッド4bの中心間距離とどのように異なっていてもよい。   In the present embodiment, as in the first embodiment, the distance between the centers of the through conductors 16c and the through conductors 17c is configured to be smaller than the distance between the centers of the connection pads 4a and the connection pads 4b. However, the distance between the centers of the through conductor 16c and the through conductor 17c may be larger than the distance between the centers of the connection pad 4a and the connection pad 4b. The differential between the through conductor 16c and the through conductor 17c may be used. As long as the impedance can be matched to a predetermined value, the distance between the centers of the through conductor 16c and the through conductor 17c may be different from the distance between the centers of the connection pad 4a and the connection pad 4b.

貫通導体16cと貫通導体17cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離と同じとした場合に、作動インピーダンスが内層配線16aと内層配線17aの差動インピーダンスよりも高い場合には、貫通導体16cと貫通導体17cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離よりも小さくすればよく、貫通導体16cと貫通導体17cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離と同じとした場合に、作動インピーダンスが内層配線16aと内層配線17aの差動インピーダンスよりも低い場合には、貫通導体16cと貫通導体17cの中心間距離を、接続パッド4aと接続パッド4bの中心間距離よりも大きくすればよい。   When the operating impedance is higher than the differential impedance between the inner layer wiring 16a and the inner layer wiring 17a when the distance between the centers of the through conductor 16c and the through conductor 17c is the same as the center distance between the connection pad 4a and the connection pad 4b. The distance between the centers of the through conductor 16c and the through conductor 17c may be made smaller than the distance between the centers of the connection pad 4a and the connection pad 4b, and the distance between the centers of the through conductor 16c and the through conductor 17c may be reduced with the connection pad 4a. If the operating impedance is lower than the differential impedance between the inner layer wiring 16a and the inner layer wiring 17a when the distance between the centers of the connection pads 4b is the same, the distance between the centers of the through conductor 16c and the through conductor 17c is determined as the connection pad. What is necessary is just to make it larger than the distance between the centers of 4a and the connection pad 4b.

パッケージ2の誘電体基板6は、内部に多層配線構造を実現できるものであれば、セラミックスなどの無機誘電体や樹脂などの有機誘電体を用いることができる。たとえばアルミナ(Al)セラミックス、ムライト(3Al・2SiO)セラミックスもしくはガラスセラミックス等の無機材料、四フッ化エチレン樹脂(ポリテトラフルオロエチレン;PTFE)、四フッ化エチレン−エチレン共重合樹脂(エチレン−テトラフルオロエチレンコポリマー;ETFE)、あるいは四フッ化エチレン−パーフルオロアルキルビニルエーテル共重合樹脂(パーフルオロアルコキシアルカン;PFA)等のフッ素樹脂、またはガラスエポキシ樹脂、ポリフェニレンエーテル(PPE)樹脂、液晶ポリエステル(LCP)、あるいはポリイミド(PI)等の樹脂材料が用いられる。また誘電体基板6の形状および寸法は用途に応じて適宜設定されるが、特に厚みについては伝送信号の周波数やインピーダンス設計に応じて設定される。 As the dielectric substrate 6 of the package 2, an inorganic dielectric such as ceramics or an organic dielectric such as resin can be used as long as a multilayer wiring structure can be realized therein. For example, alumina (Al 2 O 3) ceramics, mullite (3Al 2 O 3 · 2SiO 2 ) ceramics or inorganic materials as glass ceramics, polytetrafluoroethylene resin (polytetrafluoroethylene; PTFE), tetrafluoroethylene - ethylene copolymer Polymer resin (ethylene-tetrafluoroethylene copolymer; ETFE), fluororesin such as tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer resin (perfluoroalkoxyalkane; PFA), glass epoxy resin, polyphenylene ether (PPE) resin A resin material such as liquid crystal polyester (LCP) or polyimide (PI) is used. The shape and dimensions of the dielectric substrate 6 are appropriately set according to the application, but the thickness is particularly set according to the frequency of the transmission signal and the impedance design.

内層線路対7の材料としては、高速信号伝送用途として適した金属の導体層からなり、たとえば誘電体基板6の材料としてセラミックスを用いる場合、導体線路の材料として銅、モリブデン−マンガン、タングステン、もしくはモリブデン−マンガンメタライズ上にニッケルメッキおよび金メッキを被着させたもの、タングステンメタライズ上にニッケルメッキおよび金メッキを被着させたもの、窒化タンタル上にニッケル−クロム合金および金メッキを被着させたもの、またはニッケル−クロム合金上に白金、金メッキを被着させたもの等が用いられ、製造方法としては、たとえば厚膜印刷法あるいは各種の薄膜形成法、およびメッキ処理法等が工法として用いられる。各導体配線の幅や厚みは伝送信号の周波数やインピーダンス設計に応じて設定される。   The material of the inner layer pair 7 is made of a metal conductor layer suitable for high-speed signal transmission. For example, when ceramic is used as the material of the dielectric substrate 6, copper, molybdenum-manganese, tungsten, or Nickel plating and gold plating on molybdenum-manganese metallization, nickel plating and gold plating on tungsten metallization, nickel-chromium alloy and gold plating on tantalum nitride, or A nickel-chromium alloy having platinum or gold plated thereon is used, and as a manufacturing method, for example, a thick film printing method or various thin film forming methods, a plating method, and the like are used. The width and thickness of each conductor wiring are set according to the frequency and impedance design of the transmission signal.

実装ボード3には、本実施形態のように主に樹脂基板8が用いられるが、これに限らずパッケージ2と同様、セラミックスなどの無機誘電体や樹脂などの有機誘電体を用いることができる。   Although the resin board 8 is mainly used for the mounting board 3 as in the present embodiment, the present invention is not limited to this, and similarly to the package 2, an inorganic dielectric such as ceramics or an organic dielectric such as resin can be used.

接続パッド4,5を電気的に接続する導電性部材として、本実施形態では、はんだボールを用いているが、高速信号伝送用途として適した導電性部材であれば使用することが可能である。たとえば、金、銀、銅などの金属部材を使用し、さらにその形態としてはボールに限らず、柱状、バンプ状などであってもよい。   In this embodiment, a solder ball is used as a conductive member for electrically connecting the connection pads 4 and 5. However, any conductive member suitable for high-speed signal transmission can be used. For example, a metal member such as gold, silver, or copper is used, and the form thereof is not limited to a ball, and may be a columnar shape, a bump shape, or the like.

第1の実施形態のパッケージ2の作製は、たとえば以下のように行う。誘電体基板6がたとえばアルミナセラミックスからなる場合、まずアルミナセラミックスのグリーンシートを準備し、これに所定の打ち抜き加工を施して貫通導体10c,11cを設けるための貫通孔を形成する。次に、スクリーン印刷法によってタングステンおよびモリブデンなどの導体ペーストを貫通孔に充填するとともに、導体配線、すなわち内層配線10aと内層配線11a、ランド10bとランド11bとなるパターンをグリーンシートの所定の位置に印刷塗布する。次に、パターンが形成されたグリーンシートを重ねて、これを約1600℃で焼成する。   For example, the package 2 of the first embodiment is manufactured as follows. When the dielectric substrate 6 is made of alumina ceramic, for example, first, a green sheet of alumina ceramic is prepared, and a predetermined punching process is performed on the green sheet to form through holes for providing the through conductors 10c and 11c. Next, a conductive paste such as tungsten and molybdenum is filled into the through-holes by screen printing, and the conductor wiring, that is, the pattern of the inner layer wiring 10a and the inner layer wiring 11a, and the land 10b and the land 11b are placed at predetermined positions on the green sheet. Apply printing. Next, the green sheets on which the patterns are formed are stacked and fired at about 1600 ° C.

また、実装ボード3の作製は、FR−4などのガラスエポキシ基板の表面に銅箔を張り付けた銅貼り基板を準備し、銅箔をエッチングなど公知のパターニング技術により表層線路対9および接続パッド5をパターン形成する。   The mounting board 3 is prepared by preparing a copper-bonded substrate in which a copper foil is attached to the surface of a glass epoxy substrate such as FR-4, and by using a known patterning technique such as etching the copper foil to form the surface line pair 9 and the connection pad 5. The pattern is formed.

誘電体基板6の接続パッド4が形成された主面6a、および樹脂基板8の接続パッド5が形成された主面8aには、それぞれソルダレジスト13,14を設ける。   Solder resists 13 and 14 are provided on the main surface 6a of the dielectric substrate 6 on which the connection pads 4 are formed and the main surface 8a of the resin substrate 8 on which the connection pads 5 are formed, respectively.

はんだボール12を実装ボード3の接続パッド5上に載置し、パッケージ2の接続パッド4を、対応する接続パッド5に位置合わせして超音波振動、リフローなどにより接続パッド4,5とはんだボール12とを接合する。   Solder balls 12 are placed on the connection pads 5 of the mounting board 3, and the connection pads 4 of the package 2 are aligned with the corresponding connection pads 5, and the connection pads 4 and 5 are soldered to the solder balls by ultrasonic vibration, reflow, or the like. 12 is joined.

本発明の第1の実施形態であるパッケージ2を示す斜視図である。It is a perspective view which shows the package 2 which is the 1st Embodiment of this invention. パッケージ2を示す平面図である。3 is a plan view showing a package 2. FIG. パッケージ2を示す正面図である。3 is a front view showing a package 2. FIG. パッケージ2を示す側面図である。3 is a side view showing a package 2. FIG. 第2の実施形態の第1態様であるパッケージ2を示す図である。It is a figure which shows the package 2 which is the 1st aspect of 2nd Embodiment. 第2の実施形態の第2態様であるパッケージ2を示す図である。It is a figure which shows the package 2 which is the 2nd aspect of 2nd Embodiment. 第2の実施形態の第3態様であるパッケージ2を示す図である。It is a figure which shows the package 2 which is the 3rd aspect of 2nd Embodiment.

符号の説明Explanation of symbols

2 パッケージ
3 実装ボード
4,5 接続パッド
7 内層線路対
9 表層線路対
9a,9b 表層線路
10a,11a,16a,17a 内層配線
10b,11b,16b,17b ランド
10c,11c,16c,17c 貫通導体
2 Package 3 Mounting board 4, 5 Connection pad 7 Inner layer line pair 9 Surface layer line pair 9a, 9b Surface layer line 10a, 11a, 16a, 17a Inner layer wiring 10b, 11b, 16b, 17b Land 10c, 11c, 16c, 17c Through conductor

Claims (5)

誘電体基板と、
前記誘電体基板の内層に、互いに結合可能に設けられる第1の信号用導体および第2の信号用導体から成る配線導体対と、
前記誘電体基板の主面に設けられ、第1の信号用導体に接続される第1の実装用パッドと第2の信号用導体に接続される第2の実装用パッドとからなる実装用パッド対と、
誘電体基板の厚み方向に第1の信号用導体と第1の実装用パッドとを接続する第1の層間接続導体と、誘電体基板の厚み方向に第2の信号用導体と第2の実装用パッドとを接続する第2の層間接続導体とからなる層間接続導体対と、
を有する差動伝送用多層配線基板であって、
前記第1の実装用パッドと前記第2の実装用パッドの中心間距離と、前記第1の層間接続導体と前記第2の層間接続導体の中心間距離と、が異なるように構成される差動伝送用多層配線基板。
A dielectric substrate;
A pair of wiring conductors composed of a first signal conductor and a second signal conductor provided on the inner layer of the dielectric substrate so as to be coupled to each other;
A mounting pad provided on the main surface of the dielectric substrate and comprising a first mounting pad connected to the first signal conductor and a second mounting pad connected to the second signal conductor Vs.
A first interlayer connecting conductor connecting the first signal conductor and the first mounting pad in the thickness direction of the dielectric substrate; and a second signal conductor and second mounting in the thickness direction of the dielectric substrate. An interlayer connection conductor pair composed of a second interlayer connection conductor connecting the pad for use;
A multi-layer wiring board for differential transmission having
A difference in which the distance between the centers of the first mounting pad and the second mounting pad is different from the distance between the centers of the first interlayer connection conductor and the second interlayer connection conductor. Multi-layer wiring board for dynamic transmission.
前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体が、前記誘電体基板の厚み方向に並設される請求項1に記載の差動伝送用多層配線基板。   2. The multi-layer wiring board for differential transmission according to claim 1, wherein the wiring conductor pair includes the first signal conductor and the second signal conductor arranged in parallel in a thickness direction of the dielectric substrate. 前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体が、延伸方向に直交する断面形状が矩形状であり、それぞれの矩形の長辺同士が対向するように並設される請求項1または2記載の差動伝送用多層配線基板。   The wiring conductor pairs are arranged in parallel so that the first signal conductor and the second signal conductor have a rectangular cross-sectional shape perpendicular to the extending direction, and the long sides of each rectangle face each other. The multilayer wiring board for differential transmission according to claim 1 or 2. 前記誘電体基板が、第1の誘電体層と、前記第1の誘電体層を挟むようにそれぞれ積層される第2の誘電体層および第3の誘電体層とを含み、
前記第1の信号用導体が、前記第1の誘電体層と前記第2の誘電体層との間に設けられ、
前記第2の信号用導体が、前記第1の誘電体層と前記第3の誘電体層との間に設けられ、
前記第1の層間接続導体が前記第2の誘電体層を貫通するように設けられ、
前記第2の層間接続導体が前記第1の誘電体層および前記第2の誘電体層を貫通するように設けられる請求項1乃至3のいずれか記載の差動伝送用多層配線基板
The dielectric substrate includes a first dielectric layer, and a second dielectric layer and a third dielectric layer that are stacked so as to sandwich the first dielectric layer, respectively.
The first signal conductor is provided between the first dielectric layer and the second dielectric layer;
The second signal conductor is provided between the first dielectric layer and the third dielectric layer;
The first interlayer connection conductor is provided so as to penetrate the second dielectric layer;
4. The multi-layer wiring board for differential transmission according to claim 1, wherein the second interlayer connection conductor is provided so as to penetrate the first dielectric layer and the second dielectric layer.
前記配線導体対は、前記第1の信号用導体および前記第2の信号用導体が、前記誘電体基板の主面に平行な方向に並設される請求項1乃至4のいずれか記載の差動伝送用多層配線基板。   5. The difference according to claim 1, wherein in the wiring conductor pair, the first signal conductor and the second signal conductor are arranged in parallel in a direction parallel to a main surface of the dielectric substrate. Multi-layer wiring board for dynamic transmission.
JP2008251662A 2008-09-29 2008-09-29 Multi-layer wiring board for differential transmission Active JP5323435B2 (en)

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Application Number Priority Date Filing Date Title
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Publications (2)

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Cited By (7)

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JP2012033777A (en) * 2010-07-30 2012-02-16 Kyocer Slc Technologies Corp Wiring board
JP2012099587A (en) * 2010-10-30 2012-05-24 Kyocer Slc Technologies Corp Wiring board
JP2012119473A (en) * 2010-11-30 2012-06-21 Kyocer Slc Technologies Corp Wiring board
WO2013153869A1 (en) * 2012-04-11 2013-10-17 株式会社日本マイクロニクス Multilayer wiring board, manufacturing method therefor and probe card
US8957325B2 (en) 2013-01-15 2015-02-17 Fujitsu Limited Optimized via cutouts with ground references
JP2020119917A (en) * 2019-01-18 2020-08-06 ルネサスエレクトロニクス株式会社 Semiconductor device
JP2022545023A (en) * 2019-09-16 2022-10-24 中興通訊股▲ふん▼有限公司 circuit board

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JP2003078062A (en) * 2001-09-05 2003-03-14 Hitachi Cable Ltd Wiring board and production method therefor
JP2008109094A (en) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd Element-mounting board and semiconductor module

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JPH11186674A (en) * 1997-12-19 1999-07-09 Hitachi Ltd Transmission line board
JP2003078062A (en) * 2001-09-05 2003-03-14 Hitachi Cable Ltd Wiring board and production method therefor
JP2008109094A (en) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd Element-mounting board and semiconductor module

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033777A (en) * 2010-07-30 2012-02-16 Kyocer Slc Technologies Corp Wiring board
JP2012099587A (en) * 2010-10-30 2012-05-24 Kyocer Slc Technologies Corp Wiring board
JP2012119473A (en) * 2010-11-30 2012-06-21 Kyocer Slc Technologies Corp Wiring board
WO2013153869A1 (en) * 2012-04-11 2013-10-17 株式会社日本マイクロニクス Multilayer wiring board, manufacturing method therefor and probe card
JP2013219287A (en) * 2012-04-11 2013-10-24 Micronics Japan Co Ltd Multilayer wiring board and manufacturing method of the same
US9622344B2 (en) 2012-04-11 2017-04-11 Kabushiki Kaisha Nihon Micronics Multilayer wiring board with enclosed Ur-variant dual conductive layer
US8957325B2 (en) 2013-01-15 2015-02-17 Fujitsu Limited Optimized via cutouts with ground references
JP2020119917A (en) * 2019-01-18 2020-08-06 ルネサスエレクトロニクス株式会社 Semiconductor device
JP7163205B2 (en) 2019-01-18 2022-10-31 ルネサスエレクトロニクス株式会社 semiconductor equipment
JP2022545023A (en) * 2019-09-16 2022-10-24 中興通訊股▲ふん▼有限公司 circuit board
US11696399B2 (en) 2019-09-16 2023-07-04 Zte Corporation Circuit board
JP7353467B2 (en) 2019-09-16 2023-09-29 中興通訊股▲ふん▼有限公司 circuit board

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