JP2009111132A - Multilayer wiring board - Google Patents

Multilayer wiring board Download PDF

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Publication number
JP2009111132A
JP2009111132A JP2007281469A JP2007281469A JP2009111132A JP 2009111132 A JP2009111132 A JP 2009111132A JP 2007281469 A JP2007281469 A JP 2007281469A JP 2007281469 A JP2007281469 A JP 2007281469A JP 2009111132 A JP2009111132 A JP 2009111132A
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conductor
wiring
conductor layer
wiring board
semiconductor element
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Shigetoshi Ogawa
成敏 小川
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Abstract

<P>PROBLEM TO BE SOLVED: To suppress the inductance components of the power source or grounding circuit of a multilayer wiring board and to provide a structure of a thin multilayer wiring board. <P>SOLUTION: The multilayer wiring board has a strip line for which a wiring conductor 16 is disposed between two conductor layers 8 and 9 in the inside, the wiring conductor 16 and a semiconductor element 11 are connected, and the second conductor layer 10 of the roughly same area as a loading part 11a is provided between the conductor layers 8 and 9 and the wiring conductor 16 right below the loading part 11a of the semiconductor element 11. By providing the second conductor layer 10, the inductance components of a current route connecting the semiconductor element 11 and a connection pad 17 are suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は高周波電子回路基板等に使用される多層配線基板における配線構造に関するものである。   The present invention relates to a wiring structure in a multilayer wiring board used for a high-frequency electronic circuit board or the like.

近年、電子素子が実装される多層配線基板には、高速な信号処理に対応可能な高周波伝送特性を有するものが求められている。   In recent years, multilayer wiring boards on which electronic elements are mounted are required to have high-frequency transmission characteristics that can handle high-speed signal processing.

高速信号伝送の障害となるものとして、信号配線においては、インピーダンス不整合に伴う反射によるリンギングノイズ、信号配線の抵抗成分によるロス、信号配線間に発生するクロストークノイズなどが挙げられる。   Examples of obstacles to high-speed signal transmission include ringing noise due to reflection due to impedance mismatch, loss due to resistance components of signal wiring, crosstalk noise generated between signal wirings, and the like.

また、他の高速信号伝送の障害として、電源または接地に係る配線層やこれら配線層同士を接続する貫通導体の持つインダクタンス成分が挙げられる。このインダクタンス成分はスイッチングノイズの発生原因となる。   Another obstacle to high-speed signal transmission is an inductance component of a wiring layer related to power supply or grounding and a through conductor connecting these wiring layers. This inductance component causes switching noise.

このような電源または接地配線のインダクタンス成分を抑制する多層配線基板の構造として、例えば特開平6−163739に示す構造のものが提案されている。図3はその構造を示した分解斜視図である。   As a structure of a multilayer wiring board that suppresses the inductance component of such a power supply or ground wiring, for example, a structure shown in JP-A-6-163739 has been proposed. FIG. 3 is an exploded perspective view showing the structure.

図3において、21,22,24,26は、判りやすくするためにハッチングを付して示す電源もしくは接地配線層28,29,31,33を表面に形成した絶縁体、23,25は表面に配線群30,32を形成した絶縁体、27は表面に半導体素子の実装部34を備えた絶縁体である。そして、これら絶縁体21〜27が積層されて多層配線基板が形成されている。   In FIG. 3, 21, 22, 24, and 26 are insulators on which the power supply or ground wiring layers 28, 29, 31, and 33 are hatched for easy understanding, and 23 and 25 are on the surface. An insulator 27 in which the wiring groups 30 and 32 are formed is an insulator having a semiconductor element mounting portion 34 on the surface. And these insulators 21-27 are laminated | stacked, and the multilayer wiring board is formed.

また、これら電源もしくは接地配線層28,29,31,33は貫通導体(図示せず)によって他層の配線層28,29,31,33と電気的に接続されている。信号配線群30,32においても、貫通導体(図示せず)によって半導体素子と多層配線基板の下面電極との接続がなされている。   The power supply or ground wiring layers 28, 29, 31, 33 are electrically connected to the other wiring layers 28, 29, 31, 33 by through conductors (not shown). Also in the signal wiring groups 30 and 32, the semiconductor element and the lower surface electrode of the multilayer wiring board are connected by a through conductor (not shown).

配線群30,32は、その上下に電源もしくは接地配線層28,29,31,33が配置されており、これによってストリップライン構造を構成している。そして電源もしくは接地配線層28,29,31,33の面積を各層において広く確保することで電極の自己インダクタンスを低減させている。
特開平6−163739号公報
In the wiring groups 30 and 32, power supply or ground wiring layers 28, 29, 31, and 33 are disposed above and below the wiring groups 30 and 32, thereby forming a stripline structure. In addition, the self-inductance of the electrode is reduced by ensuring a wide area of the power source or ground wiring layers 28, 29, 31, 33 in each layer.
JP-A-6-163739

しかしながら、これら単層の電源もしくは接地配線層28,29,31,33だけではインダクタンス成分の低減を十分に図れない場合があるという問題点があった。   However, there is a problem in that the inductance component may not be sufficiently reduced only by these single-layer power supply or ground wiring layers 28, 29, 31, and 33.

また、半導体素子駆動用の電源もしくは接地の電流経路には、電源もしくは接地配線層28,29,31,33の各層間を接続する貫通導体によって、垂直方向の電流ループが形成される。そして、この電流経路においてインダクタンス成分が大きくなると、スイッチングノイズを生じてしまうという問題点があった。   Further, a vertical current loop is formed in the power source or ground current path for driving the semiconductor element by the through conductors connecting the power source or ground wiring layers 28, 29, 31 and 33. When the inductance component increases in this current path, there is a problem that switching noise occurs.

本発明はこれらの問題点を解決するために為されたもので、その目的は、多層配線基板の電源または接地回路のインダクタンス成分を抑制するとともに、薄い多層配線基板を提供することにある。   The present invention has been made to solve these problems, and an object thereof is to provide a thin multilayer wiring board while suppressing the inductance component of the power supply or ground circuit of the multilayer wiring board.

本発明の多層配線基板は、半導体素子が搭載される搭載部を有し、2つの導体層の間に前記半導体素子を電気的に接続するための配線導体が配置されたストリップラインを内部に備えた多層配線基板において、前記半導体素子の搭載部直下に前記導体層と前記配線導体の少なくとも一部が配置されているとともに、この導体層と前記配線導体との間に、前記搭載部と略同面積の第2導体層を設け、また、好ましくは、前記第2導体層が、前記配線導体の上下両側に設けられており、前記配線導体は、前記第2導体層の形成領域において線幅が細く形成されている。前記導体層は、基準電位または電源電位に接続される。   The multilayer wiring board of the present invention has a mounting portion on which a semiconductor element is mounted, and internally includes a strip line in which a wiring conductor for electrically connecting the semiconductor element is disposed between two conductor layers. In the multilayer wiring board, at least a part of the conductor layer and the wiring conductor is disposed immediately below the mounting portion of the semiconductor element, and substantially the same as the mounting portion between the conductor layer and the wiring conductor. A second conductor layer having an area is provided, and preferably, the second conductor layer is provided on both upper and lower sides of the wiring conductor, and the wiring conductor has a line width in a formation region of the second conductor layer. It is thin. The conductor layer is connected to a reference potential or a power supply potential.

本発明の多層配線基板によれば、半導体素子が搭載される搭載部を有し、2つの導体層の間に半導体素子を電気的に接続するための配線導体が配置されたストリップラインを内部に備えた多層配線基板において、半導体素子の搭載部の直下に導体層と配線導体の少なくとも一部が配置されているとともに、この導体層と配線導体との間に、搭載部と略同面積の第2導体層を設けたことから、半導体素子を駆動する電源もしくは接地回路を構成する導体層が並列接続されるので、電源もしくは接地回路のインダクタンスが低減される。   According to the multilayer wiring board of the present invention, the strip line having the mounting portion on which the semiconductor element is mounted and the wiring conductor for electrically connecting the semiconductor element between the two conductor layers is disposed inside. In the multilayer wiring board provided, at least a part of the conductor layer and the wiring conductor is disposed immediately below the mounting portion of the semiconductor element, and the first portion having substantially the same area as the mounting portion is disposed between the conductor layer and the wiring conductor. Since the two conductor layers are provided, the power layers for driving the semiconductor elements or the conductor layers constituting the ground circuit are connected in parallel, so that the inductance of the power source or the ground circuit is reduced.

また、第2導体層が配線導体の上下両側に設けられる場合、電源もしくは接地層が配線導体に対して上下対称な配置となるため、配線導体の周囲に発生する電磁界の広がりに偏りが無く、より安定した信号伝送が可能となる。   In addition, when the second conductor layer is provided on both upper and lower sides of the wiring conductor, the power source or ground layer is arranged symmetrically with respect to the wiring conductor, so there is no bias in the spread of the electromagnetic field generated around the wiring conductor. More stable signal transmission is possible.

また、配線導体が第2導体層の形成領域において線幅を細く形成されている場合、配線導体の特性インピーダンスを変化させずに第2導体層を配線導体の近くに配置することができる。従って多層配線基板の厚みを薄いものにできる。   Further, when the wiring conductor is formed with a narrow line width in the formation region of the second conductor layer, the second conductor layer can be disposed near the wiring conductor without changing the characteristic impedance of the wiring conductor. Therefore, the thickness of the multilayer wiring board can be reduced.

また、導体層は、基準電位または電源電位に接続される場合、搭載される半導体素子に、電源電位または基準電位を与える導体層の配置設計が容易な多層配線基板とすることができる。   Further, when the conductor layer is connected to the reference potential or the power supply potential, it can be a multilayer wiring board in which the layout design of the conductor layer that gives the power supply potential or the reference potential to the mounted semiconductor element is easy.

以下に、添付の図面を参照して、本発明の実施の形態について説明する。図1は半導体素子を搭載した本発明の多層配線基板の断面図、図2は本発明の多層配線基板を分解して示す分解斜視図である。   Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view of a multilayer wiring board of the present invention on which a semiconductor element is mounted, and FIG. 2 is an exploded perspective view showing the multilayer wiring board of the present invention in an exploded manner.

図1,図2において、8,9は導体層、16は2つの導体層8,9の間に配置された配線導体である。なお、8は配線導体16の接地層として機能する導体層、9は配線導体16の配線の細くなっている部分16aに対しての接地層として機能するとともに、半導体素子11の駆動電力を供給するまたは接地電位を供給する導体層であり、この導体層は電源電位または接地電位となる基準電位に接続される。そして、これら2層の導体層8,9と配線導体16とでストリップ導体が構成されている。また、半導体素子11の搭載部11aの直下の第1導体層8,9と配線導体16との間に、搭載部11aと略同面積の第2導体層10が設けられている。   In FIGS. 1 and 2, reference numerals 8 and 9 denote conductor layers, and reference numeral 16 denotes a wiring conductor disposed between the two conductor layers 8 and 9. Reference numeral 8 denotes a conductor layer that functions as a ground layer for the wiring conductor 16, and 9 functions as a ground layer for the narrowed portion 16 a of the wiring conductor 16 and supplies driving power to the semiconductor element 11. Alternatively, it is a conductor layer that supplies a ground potential, and this conductor layer is connected to a reference potential that is a power supply potential or a ground potential. The two conductor layers 8 and 9 and the wiring conductor 16 constitute a strip conductor. A second conductor layer 10 having substantially the same area as the mounting portion 11 a is provided between the first conductor layers 8 and 9 and the wiring conductor 16 immediately below the mounting portion 11 a of the semiconductor element 11.

図2において、1は外部との接続パッド17を下面に有する絶縁層、2および6は電源もしくは接地用の導体層8と半導体素子駆動用の電源もしくは接地用の導体層9を有する絶縁層、3および5は電源もしくは接地用の第2の導体層10を有する絶縁層、4は配線導体16と半導体素子11に接続される電極に接続された貫通導体14の受けパッド15とを備える複数の配線が含まれた配線群12を有する絶縁層、7は半導体素子11の搭載部11aを有する絶縁層である。なお、図2において、判りやすくするため、導体層8,9,10にはハッチングを付した。したがって、これらは断面を示すものではない。   In FIG. 2, 1 is an insulating layer having a connection pad 17 for external connection on the lower surface, 2 and 6 are insulating layers having a power source or grounding conductor layer 8 and a semiconductor element driving power source or grounding conductor layer 9, 3 and 5 are a plurality of insulating layers having a second conductor layer 10 for power supply or grounding, and 4 is a plurality of wiring conductors 16 and a plurality of receiving pads 15 of through conductors 14 connected to electrodes connected to the semiconductor element 11. An insulating layer having a wiring group 12 including wiring, and 7 is an insulating layer having a mounting portion 11 a of the semiconductor element 11. In FIG. 2, the conductor layers 8, 9, and 10 are hatched for easy understanding. Therefore, they do not show a cross section.

また、これら絶縁層1〜7にはそれぞれの絶縁層1〜7に形成された配線導体16および導体層8,9,10同士が貫通導体13,14によって層間接続されている。例えば具体的には、13は半導体素子11に接続される電極と導体層9と第2導体層10と接続パッド17とを電気的に接続する半導体素子11駆動用の貫通導体、14は配線導体16の受けパッド15と、半導体素子11に接続される電極群のうち両端に配置された電極および配線導体16と接続パッド17とを電気的に接続する貫通導体である。貫通導体14は、導体層9および第2導体層10には接続されない。このため、導体層9および第2導体層10の貫通導体14が貫通する部分は抜きパッド、すなわち貫通導体14が導体層9,10に接触しないように導体層9、10を円形等に除去し、その中心を貫通させるようにしてある。   In addition, the wiring conductor 16 and the conductor layers 8, 9, 10 formed on the insulating layers 1 to 7 are connected to each other by the through conductors 13 and 14. For example, specifically, 13 is a through conductor for driving the semiconductor element 11 that electrically connects the electrode connected to the semiconductor element 11, the conductor layer 9, the second conductor layer 10, and the connection pad 17, and 14 is a wiring conductor. This is a through conductor that electrically connects the receiving pad 15 and the electrodes disposed at both ends of the electrode group connected to the semiconductor element 11 and the wiring conductor 16 and the connection pad 17. The through conductor 14 is not connected to the conductor layer 9 and the second conductor layer 10. For this reason, the portion of the conductor layer 9 and the second conductor layer 10 through which the through conductor 14 penetrates is removed, that is, the conductor layers 9 and 10 are removed in a circular shape or the like so that the through conductor 14 does not contact the conductor layers 9 and 10. The center is penetrated.

絶縁層1〜7は、例えばセラミックグリーンシート積層法によって積層されて積層体とされる。積層体は、酸化アルミニウム質焼結体,窒化アルミニウム質焼結体,炭化珪素質焼結体,窒化珪素質焼結体,ムライト質焼結体またはガラスセラミックス等の無機絶縁材料から成る。あるいはポリイミド,エポキシ樹脂,フッ素樹脂,ポリノルボルネンまたはベンゾシクロブテン等の有機絶縁材料を積層して、あるいはセラミックス粉末等の無機絶縁物粉末をエポキシ系樹脂等の熱硬化性樹脂で結合して成る複合絶縁材料などの電気絶縁材料を積層して多層の有機樹脂基板とされる。   The insulating layers 1 to 7 are laminated by, for example, a ceramic green sheet laminating method to form a laminated body. The laminate is made of an inorganic insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a silicon nitride sintered body, a mullite sintered body, or a glass ceramic. Or a composite made by laminating organic insulating materials such as polyimide, epoxy resin, fluororesin, polynorbornene or benzocyclobutene, or bonding inorganic insulating powder such as ceramic powder with thermosetting resin such as epoxy resin A multilayer organic resin substrate is formed by laminating an electrical insulating material such as an insulating material.

これら絶縁層1〜7の厚みとしては、使用する材料の特性に応じて、要求される仕様に対応する機械的強度や電気的特性、貫通導体群の形成の容易さ等の条件を満たすように適宜設定される。   The thickness of these insulating layers 1 to 7 satisfies the conditions such as mechanical strength and electrical characteristics corresponding to the required specifications, ease of formation of the through conductor group, etc., depending on the characteristics of the materials used. Set as appropriate.

また、平行な配線群12、導体層8,9,10および貫通導体13,14は、例えばタングステン,モリブデン,モリブデン−マンガン,銅,銀または銀−パラジウム等の金属粉末メタライズ、あるいは銅,銀,ニッケル,クロム,チタン,金,ニオブまたはこれら金属の合金等から成る。   The parallel wiring group 12, the conductor layers 8, 9, 10 and the through conductors 13 and 14 are made of metal powder metallization such as tungsten, molybdenum, molybdenum-manganese, copper, silver or silver-palladium, or copper, silver, It consists of nickel, chromium, titanium, gold, niobium or alloys of these metals.

例えば、タングステンの金属粉末メタライズから成る場合であれば、タングステン粉末に適当な有機バインダおよび溶剤等を添加混合して得た金属ペーストを、絶縁層1〜7となるセラミックグリーンシートに所定のパターンに印刷塗布し、これを積層したセラミックグリーンシートの積層体とともに焼成することによって、配線群12、導体層8,9,10および貫通導体13,14が各絶縁層1〜7の層間または表面に配設される。また,金属材料の薄膜から成る場合であれば、例えばスパッタリング法,真空蒸着法またはメッキ法により金属層を形成した後、フォトリソグラフィ法により所定の配線パターンに形成される。   For example, if it is made of tungsten metal powder metallization, a metal paste obtained by adding and mixing an appropriate organic binder and solvent to the tungsten powder is formed into a predetermined pattern on the ceramic green sheets to be the insulating layers 1-7. The wiring group 12, the conductor layers 8, 9, and 10 and the through conductors 13 and 14 are arranged between the insulating layers 1 to 7 or between the surfaces by printing and applying and firing together with a laminated body of ceramic green sheets. Established. In the case of a thin film of a metal material, a metal layer is formed by, for example, a sputtering method, a vacuum evaporation method, or a plating method, and then formed into a predetermined wiring pattern by a photolithography method.

本発明の多層配線基板は、配線導体16が多数配置された絶縁層4の上下に電源電位もしくは接地となる基準電位に接続される導体層8,9が設けられた絶縁層2,6が積層される。これによって、ストリップライン構造の高周波伝送線路が内部に形成されるのであるが、さらに導体層8,9と配線導体16との間に第2導体層10が配置されるように絶縁層3,5が同時に積層される。第2導体層10は、上層および/または下層の導体層9と貫通導体13を介して接続されて半導体素子11駆動用の電源配線層または接地配線層とされており、貫通導体13は半導体素子11と接続される電極および接続パッド17と接続されている。   In the multilayer wiring board of the present invention, insulating layers 2 and 6 provided with conductor layers 8 and 9 connected to a reference potential serving as a power supply potential or ground are laminated above and below an insulating layer 4 on which a large number of wiring conductors 16 are arranged. Is done. As a result, a high-frequency transmission line having a stripline structure is formed inside, and the insulating layers 3 and 5 are arranged so that the second conductor layer 10 is further disposed between the conductor layers 8 and 9 and the wiring conductor 16. Are stacked simultaneously. The second conductor layer 10 is connected to an upper layer and / or lower layer conductor layer 9 via a through conductor 13 to be a power supply wiring layer or a ground wiring layer for driving the semiconductor element 11, and the through conductor 13 is a semiconductor element. 11 and the connection pad 17 are connected.

すなわち、配線導体16は、貫通導体14および受けパッド15を介して半導体素子11と接続され、他端は貫通導体14を介して外部との接続パッド17に接続される。また、電源供給用または基準電位供給用の導体層8,9を上下層に有し、その間に配線導体16が配置されたストリップライン構造を有している。   That is, the wiring conductor 16 is connected to the semiconductor element 11 through the through conductor 14 and the receiving pad 15, and the other end is connected to the connection pad 17 to the outside through the through conductor 14. Further, it has a stripline structure in which conductor layers 8 and 9 for power supply or reference potential supply are provided in upper and lower layers, and a wiring conductor 16 is disposed between them.

また、導体層9および第2導体層10は半導体素子11の搭載部11aと平面視において相似形で、少なくとも貫通導体13,14が配置される領域を含み、半導体素子11の投影面と同じ程度の面積に設けられる。   In addition, the conductor layer 9 and the second conductor layer 10 are similar to the mounting portion 11a of the semiconductor element 11 in plan view, and include at least a region where the through conductors 13 and 14 are disposed, and are approximately the same as the projection surface of the semiconductor element 11. Is provided in the area.

なお、図2において図示していないが、半導体素子11に接続される電極と導体層9との間の貫通導体13は、通常、電極の数と同数で設けられる。これに対し、導体層9および第2導体層10を接続する層間の貫通導体13は、半導体素子11と導体層9との間の貫通導体13の数より多く設けられる。   Although not shown in FIG. 2, the number of through conductors 13 between the electrode connected to the semiconductor element 11 and the conductor layer 9 is usually the same as the number of electrodes. On the other hand, the number of through conductors 13 between the layers connecting the conductor layer 9 and the second conductor layer 10 is provided more than the number of through conductors 13 between the semiconductor element 11 and the conductor layer 9.

半導体素子11を駆動するために、半導体素子11には多層配線基板から半導体素子11駆動用の電源電位および接地用の基準電位が貫通導体13によって供給される。そして、半導体素子11と接続パッド17との間に垂直方向の電流経路が形成される。近年の半導体素子11は、集積度が高くなり、半導体素子11のスイッチング動作に伴って、これら電流経路には大きく変動する電源電流または接地電流が流れる。この場合、電流経路のインダクタンス成分がスイッチングノイズの原因となって半導体素子11の動作に影響を与えるため、多層配線基板のインダクタンス成分を低く抑えることが必要となってくる。   In order to drive the semiconductor element 11, a power supply potential for driving the semiconductor element 11 and a reference potential for grounding are supplied to the semiconductor element 11 from the multilayer wiring board by the through conductor 13. A vertical current path is formed between the semiconductor element 11 and the connection pad 17. In recent years, the degree of integration of the semiconductor element 11 has increased, and a power supply current or a ground current that varies greatly flows through these current paths in accordance with the switching operation of the semiconductor element 11. In this case, since the inductance component of the current path causes switching noise and affects the operation of the semiconductor element 11, it is necessary to keep the inductance component of the multilayer wiring board low.

本発明の多層配線基板は、配線導体16と導体層9との間に第2導体層10が配置されている。そして、これら導体層9および第2導体層10は多くの貫通導体13によって接続されている。これにより、導体層9,第2導体層10および複数の貫通導体13が相互に並列接続されることになり、インダクタンス値を低減することができる。   In the multilayer wiring board of the present invention, the second conductor layer 10 is disposed between the wiring conductor 16 and the conductor layer 9. The conductor layer 9 and the second conductor layer 10 are connected by many through conductors 13. Thereby, the conductor layer 9, the second conductor layer 10, and the plurality of through conductors 13 are connected in parallel to each other, and the inductance value can be reduced.

すなわち、本発明の多層配線基板においては、第2導体層10を設けることにより、貫通導体13から導体層9へ電流が流れ、導体層9で広がった電流が他の貫通導体13を介して上側もしくは下側に位置する導体層9または第2導体層10へ流れる。このように半導体素子11の直下において、貫通導体13と導体層9,10とでループを形成する垂直方向の電流経路が並列に形成されることによって、これら電流経路におけるインダクタンス値を低減することができる。   That is, in the multilayer wiring board of the present invention, by providing the second conductor layer 10, a current flows from the through conductor 13 to the conductor layer 9, and the current spread in the conductor layer 9 passes through the other through conductor 13 to the upper side. Or it flows to the conductor layer 9 or the second conductor layer 10 located on the lower side. In this manner, the vertical current paths that form loops are formed in parallel between the through conductor 13 and the conductor layers 9 and 10 immediately below the semiconductor element 11, thereby reducing the inductance value in these current paths. it can.

また、本発明の多層配線基板において、配線導体16は第2導体層10の形成領域、すなわち第2導体層10を絶縁層4に投影した領域内において、線幅が細くされている部分16aを有する。これによって、配線導体16の特性インピーダンスを変化させることなく、第2導体層10と配線導体16との間の距離を導体層9と配線導体16との間の距離よりも小さくすることができる。そして、第2導体層10を追加することにより、基板の厚みを厚くする必要がないため、薄い多層配線基板とすることができる。   In the multilayer wiring board of the present invention, the wiring conductor 16 includes a portion 16a having a narrow line width in a region where the second conductor layer 10 is formed, that is, in a region where the second conductor layer 10 is projected onto the insulating layer 4. Have. Accordingly, the distance between the second conductor layer 10 and the wiring conductor 16 can be made smaller than the distance between the conductor layer 9 and the wiring conductor 16 without changing the characteristic impedance of the wiring conductor 16. And by adding the 2nd conductor layer 10, since it is not necessary to make the thickness of a board | substrate thick, it can be set as a thin multilayer wiring board.

ストリップライン構造は、配線導体16の形状や、配線導体16と導体層8,9との距離によって決定される特性インピーダンスを一定に保つ設計によって形成されるのが一般的である。配線導体16の幅が一定で、第2導体層10を導体層9の内側の導体層9と配線導体16との間に挿入し、配線導体16と第2導体層10との距離が近くなってしまうと、第2導体層10の形成領域内における配線導体16および第2導体層10で構成されるストリップラインの特性インピーダンスが変化してしまうが、本発明の多層配線基板によれば第2導体層10と重なる領域において配線導体16の線幅を細くしているので、特性インピーダンスの変化を抑えつつ、第2導体層10を配置することができる。その結果、特性インピーダンスの不整合による信号の反射が抑制され、リンギングノイズを抑えた伝送特性を実現することができる。   The stripline structure is generally formed by a design that maintains a constant characteristic impedance determined by the shape of the wiring conductor 16 and the distance between the wiring conductor 16 and the conductor layers 8 and 9. The width of the wiring conductor 16 is constant, and the second conductor layer 10 is inserted between the conductor layer 9 inside the conductor layer 9 and the wiring conductor 16 so that the distance between the wiring conductor 16 and the second conductor layer 10 is reduced. As a result, the characteristic impedance of the strip line constituted by the wiring conductor 16 and the second conductor layer 10 in the region where the second conductor layer 10 is formed changes. However, according to the multilayer wiring board of the present invention, the second Since the line width of the wiring conductor 16 is reduced in the region overlapping with the conductor layer 10, the second conductor layer 10 can be disposed while suppressing a change in characteristic impedance. As a result, signal reflection due to characteristic impedance mismatch is suppressed, and transmission characteristics with reduced ringing noise can be realized.

また、第2導体層10を導体層9の内側に配置し、薄い多層配線基板とできることによって、貫通導体13,14が長くならず、貫通導体13,14のインダクタンス成分が増加することがない。したがって、電流経路内の貫通導体13,14によるインダクタンス成分を抑制することができる。この結果、インダクタンス成分に起因するスイッチングノイズを抑制することができ、良好な伝送特性を実現することができる。   In addition, since the second conductor layer 10 is disposed inside the conductor layer 9 to form a thin multilayer wiring board, the through conductors 13 and 14 do not become long, and the inductance component of the through conductors 13 and 14 does not increase. Therefore, the inductance component due to the through conductors 13 and 14 in the current path can be suppressed. As a result, switching noise caused by the inductance component can be suppressed, and good transmission characteristics can be realized.

さらに、配線導体16の線幅の細い部分16aを形成することで、配線導体16における線幅の細い部分16aにおける配線間のスペースに受けパッド15をより多く配置することができ、半導体素子11の電極数の増加に対応することが可能となる。   Furthermore, by forming the narrow line width portion 16 a of the wiring conductor 16, more receiving pads 15 can be arranged in the space between the wirings in the narrow line width portion 16 a of the wiring conductor 16. It is possible to cope with an increase in the number of electrodes.

なお、第2導体層10は、配線導体16上方または下方のいずれか片側だけに設けてもインダクタンス成分を抑制することが可能であるが、より好ましくは、上方および下方の両側に設けるのがよい。   Although the second conductor layer 10 can suppress the inductance component even if it is provided only on one side above or below the wiring conductor 16, it is more preferable to provide it on both sides above and below. .

これによって、片側に設ける場合に比べて電流経路に係る導体層が多くなり、よりインダクタンス成分が抑制されるとともに、電源もしくは接地層となる第2導体層10が配線導体16に対して上下対称な配置となるため、配線導体16の周囲に発生する電磁界の広がりが偏らず、より安定した信号伝送が可能となる。   As a result, the number of conductor layers related to the current path is increased as compared with the case of being provided on one side, the inductance component is further suppressed, and the second conductor layer 10 serving as a power supply or ground layer is vertically symmetrical with respect to the wiring conductor 16. Therefore, the spread of the electromagnetic field generated around the wiring conductor 16 is not biased, and more stable signal transmission is possible.

以上のように本発明によれば、電源または接地回路のインダクタンス成分を抑制した薄型の多層配線基板とすることができる。さらに、第2導体層10の形成領域で配線導体16の線幅を細くし、上下両側に第2導体層10を設けることによって、特性インピーダンスの不整合を生じることがなく、特性インピーダンスが配線内で一定な多層配線基板とすることができる。これによって、高速信号処理のための高周波信号の反射を抑制することができ、良好な伝送特性を有する多層配線基板を提供することができる。   As described above, according to the present invention, a thin multilayer wiring board in which an inductance component of a power supply or a ground circuit is suppressed can be obtained. Furthermore, by narrowing the line width of the wiring conductor 16 in the region where the second conductor layer 10 is formed and providing the second conductor layer 10 on both the upper and lower sides, there is no mismatch in characteristic impedance, and the characteristic impedance is reduced in the wiring. Thus, a constant multilayer wiring board can be obtained. Thereby, reflection of high-frequency signals for high-speed signal processing can be suppressed, and a multilayer wiring board having good transmission characteristics can be provided.

なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を加えることは何ら差し支えない。例えば、配線導体16が設けられた絶縁層4の層数をさらに増やして多層積層した多層配線基板とすることができる。   In addition, this invention is not limited to the example of the above embodiment, A various change may be added in the range which does not deviate from the summary of this invention. For example, the number of insulating layers 4 provided with the wiring conductors 16 can be further increased to provide a multilayer wiring board in which multiple layers are stacked.

また、上記実施の形態の説明において上下左右という用語は、単に図面上の位置関係を説明するために用いたものであり、実際の使用時における位置関係を意味するものではない。   In the description of the above embodiment, the terms “upper, lower, left and right” are merely used to describe the positional relationship in the drawings, and do not mean the positional relationship in actual use.

本発明の多層配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the multilayer wiring board of this invention. 本発明の多層配線基板の実施の形態の一例を示す分解斜視図である。It is a disassembled perspective view which shows an example of embodiment of the multilayer wiring board of this invention. 従来の多層配線基板の例を示す分解斜視図である。It is a disassembled perspective view which shows the example of the conventional multilayer wiring board.

符号の説明Explanation of symbols

1〜7:絶縁層
8,9:導体層
10:第2導体層
11a:半導体素子の搭載部
12:複数の配線導体を含む配線群
13:貫通導体
14:貫通導体
15:受けパッド
16:配線導体
17:接続パッド
DESCRIPTION OF SYMBOLS 1-7: Insulating layer 8,9: Conductor layer 10: 2nd conductor layer 11a: Mount part of a semiconductor element 12: Wiring group including a plurality of wiring conductors 13: Through conductor 14: Through conductor 15: Receiving pad 16: Wiring Conductor 17: Connection pad

Claims (4)

半導体素子が搭載される搭載部を有し、2つの導体層の間に前記半導体素子を電気的に接続するための配線導体が配置されたストリップラインを内部に備えた多層配線基板において、前記半導体素子の搭載部の直下に前記導体層と前記配線導体の少なくとも一部が配置されているとともに、該導体層と前記配線導体との間に、前記搭載部と略同面積の第2導体層を設けたことを特徴とする多層配線基板。 In a multilayer wiring board having a mounting portion on which a semiconductor element is mounted and having a strip line in which a wiring conductor for electrically connecting the semiconductor element is disposed between two conductor layers, the semiconductor At least a part of the conductor layer and the wiring conductor is disposed directly under the element mounting portion, and a second conductor layer having substantially the same area as the mounting portion is provided between the conductor layer and the wiring conductor. A multilayer wiring board characterized by being provided. 前記第2導体層が、前記配線導体の上下両側に設けられていることを特徴とする請求項1記載の多層配線基板。 The multilayer wiring board according to claim 1, wherein the second conductor layer is provided on both upper and lower sides of the wiring conductor. 前記配線導体は、前記第2導体層の形成領域において線幅が細く形成されていることを特徴とする請求項1または2記載の多層配線基板。 3. The multilayer wiring board according to claim 1, wherein the wiring conductor has a narrow line width in a region where the second conductor layer is formed. 前記導体層は、基準電位または電源電位に接続されることを特徴とする請求項1乃至3のいずれかに記載の多層配線基板。 4. The multilayer wiring board according to claim 1, wherein the conductor layer is connected to a reference potential or a power supply potential.
JP2007281469A 2007-10-30 2007-10-30 Multilayer wiring board Pending JP2009111132A (en)

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WO2011111313A1 (en) * 2010-03-08 2011-09-15 日本電気株式会社 Electronic device, wiring substrate, and noise shielding method
WO2011111314A1 (en) * 2010-03-08 2011-09-15 日本電気株式会社 Wiring substrate, electronic device, and noise shielding method
WO2012042740A1 (en) * 2010-09-28 2012-04-05 日本電気株式会社 Structural body and wiring substrate
JP2014175628A (en) * 2013-03-13 2014-09-22 Canon Inc Semiconductor package and printed circuit board
JP2017050560A (en) * 2016-11-16 2017-03-09 株式会社村田製作所 High frequency module
WO2021153494A1 (en) * 2020-01-30 2021-08-05 京セラ株式会社 Circuit board and probe card
CN113640927A (en) * 2021-07-26 2021-11-12 嘉兴佳利电子有限公司 Multilayer structure packaging ceramic for 5G optical communication module and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111313A1 (en) * 2010-03-08 2011-09-15 日本電気株式会社 Electronic device, wiring substrate, and noise shielding method
WO2011111314A1 (en) * 2010-03-08 2011-09-15 日本電気株式会社 Wiring substrate, electronic device, and noise shielding method
US8873246B2 (en) 2010-03-08 2014-10-28 Nec Corporation Electronic device, wiring board, and method of shielding noise
WO2012042740A1 (en) * 2010-09-28 2012-04-05 日本電気株式会社 Structural body and wiring substrate
US8952266B2 (en) 2010-09-28 2015-02-10 Nec Corporation Structural body and interconnect substrate
JP2014175628A (en) * 2013-03-13 2014-09-22 Canon Inc Semiconductor package and printed circuit board
JP2017050560A (en) * 2016-11-16 2017-03-09 株式会社村田製作所 High frequency module
WO2021153494A1 (en) * 2020-01-30 2021-08-05 京セラ株式会社 Circuit board and probe card
JP7397888B2 (en) 2020-01-30 2023-12-13 京セラ株式会社 Circuit board and probe card
CN113640927A (en) * 2021-07-26 2021-11-12 嘉兴佳利电子有限公司 Multilayer structure packaging ceramic for 5G optical communication module and preparation method thereof

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