JP2001068593A - Multilayer wiring board - Google Patents

Multilayer wiring board

Info

Publication number
JP2001068593A
JP2001068593A JP24409499A JP24409499A JP2001068593A JP 2001068593 A JP2001068593 A JP 2001068593A JP 24409499 A JP24409499 A JP 24409499A JP 24409499 A JP24409499 A JP 24409499A JP 2001068593 A JP2001068593 A JP 2001068593A
Authority
JP
Japan
Prior art keywords
wiring
group
parallel
parallel wiring
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24409499A
Other languages
Japanese (ja)
Inventor
Masanao Kabumoto
正尚 株元
Yoshihiro Nabe
義博 鍋
Koki Kawabata
幸喜 川畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP24409499A priority Critical patent/JP2001068593A/en
Publication of JP2001068593A publication Critical patent/JP2001068593A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain a multilayer wiring board, capable of efficiently connecting terminals without reducing the flexibility of wiring connection, even in a group of parallel wiring being laminated alternately with the shortest distance, can reduce crosstalk noise between wiring, and is suited for an electronic circuit substrate or the like for mounting electronic components, such as a semiconductor element that operates speedily. SOLUTION: A second laminated D2, where a fourth insulation layer 14 with a fourth parallel wiring group L4, that orthogonally crosses a third insulation layer 13 with a third group of parallel wiring L3, that orthogonally crosses a first group of parallel wiring L1 by 30-60 degrees is laminated, is laminated on a first laminate D1 where a second insulation layer I2 with a second group of parallel wiring L2, that orthogonally crosses is laminated on a first insulation layer I1 with the first group of parallel wiring L1. Furthermore, in the multilayer wiring board, an interval h2 between the second and third groups of parallel wiring L2 and L3 is set larger than an interval h1' between the third and fourth groups of parallel wiring L3 and L4, thus reducing the crosstalk noises between wirings, while improving the flexibility of wiring connection.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電子回路基板等に使
用される多層配線基板に関し、より詳細には高速で作動
する半導体素子を搭載する多層配線基板における配線構
造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board used for an electronic circuit board or the like, and more particularly to a wiring structure in a multilayer wiring board on which a semiconductor element operating at a high speed is mounted.

【0002】[0002]

【従来の技術】従来、半導体集積回路素子等の半導体素
子が搭載され、電子回路基板等に使用される多層配線基
板においては、内部配線用の配線導体の形成にあたっ
て、アルミナ等のセラミックスから成る絶縁層とタング
ステン(W)等の高融点金属から成る配線導体とを交互
に積層して多層配線基板を形成していた。
2. Description of the Related Art Conventionally, in a multilayer wiring board on which a semiconductor element such as a semiconductor integrated circuit element is mounted and which is used for an electronic circuit board or the like, an insulating material made of ceramics such as alumina is used for forming a wiring conductor for internal wiring. Layers and wiring conductors made of a refractory metal such as tungsten (W) are alternately stacked to form a multilayer wiring board.

【0003】従来の多層配線基板においては、内部配線
用配線導体のうち信号配線は通常はストリップ線路構造
とされており、信号配線として形成された配線導体の上
下に絶縁層を介していわゆるベタパターン形状の広面積
の接地(グランド)層または電源層が形成されていた。
In a conventional multilayer wiring board, signal wirings of internal wiring wiring conductors usually have a strip line structure, and a so-called solid pattern is formed above and below wiring conductors formed as signal wirings via insulating layers. A ground (ground) layer or a power supply layer having a wide area of the shape was formed.

【0004】また、多層配線基板が取り扱う電気信号の
高速化に伴い、絶縁層を比誘電率が10程度であるアルミ
ナセラミックスに代えて比誘電率が3.5 〜5と比較的小
さいポリイミド樹脂やエポキシ樹脂を用いて形成し、こ
の絶縁層上に蒸着法やスパッタリング法等の気相成長法
による薄膜形成技術を用いて銅(Cu)からなる内部配
線用導体層を形成し、フォトリソグラフィ法により微細
なパターンの配線導体を形成して、この絶縁層と配線導
体とを多層化することにより高密度・高機能でかつ半導
体素子の高速作動が可能となる多層配線基板を得ること
も行なわれていた。
Further, with the increase in the speed of electric signals handled by the multilayer wiring board, the insulating layer is replaced with alumina ceramics having a relative dielectric constant of about 10, and a polyimide resin or epoxy resin having a relatively small relative dielectric constant of 3.5 to 5 is used. And a conductive layer for internal wiring made of copper (Cu) is formed on the insulating layer by using a thin film forming technique such as a vapor deposition method such as a vapor deposition method or a sputtering method. By forming a wiring conductor in a pattern and multiplying the insulating layer and the wiring conductor into layers, a multilayer wiring board having a high density, a high function and a high speed operation of a semiconductor element has been obtained.

【0005】一方、多層配線基板の内部配線の配線構造
として、配線のインピーダンスの低減や信号配線間のク
ロストークの低減等を図り、しかも高密度配線を実現す
るために、各絶縁層の上面に平行配線群を形成し、これ
を多層化して各層の配線群のうち所定の配線同士をビア
導体やスルーホール導体等の貫通導体を介して電気的に
接続する構造が提案されている。
On the other hand, the wiring structure of the internal wiring of the multilayer wiring board is designed to reduce the impedance of the wiring, reduce the crosstalk between signal wirings, etc. A structure has been proposed in which a group of parallel wirings is formed, which is multi-layered, and predetermined wirings in the wiring group of each layer are electrically connected to each other via through conductors such as via conductors and through-hole conductors.

【0006】このような平行配線群を有する多層配線基
板においては、この多層配線基板に搭載される半導体素
子等の電子部品とこの多層配線基板が実装される実装ボ
ードとを電気的に接続するために、多層配線基板内で各
平行配線群のうちから適当な配線を選択し、異なる配線
層間における配線同士の電気的な接続はビア導体等の貫
通導体を介して行なわれる。
In a multilayer wiring board having such parallel wiring groups, an electronic component such as a semiconductor element mounted on the multilayer wiring board is electrically connected to a mounting board on which the multilayer wiring board is mounted. First, an appropriate wiring is selected from each parallel wiring group in the multilayer wiring board, and the electrical connection between the wirings between different wiring layers is performed via a through conductor such as a via conductor.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、この従
来の多層配線基板における各平行配線の配線方向は互い
に直交するいわゆるX方向とY方向とで構成されること
から、この多層配線基板中のこれら直交する平行配線群
を介して所望の半導体素子の電極端子と実装ボードの接
続端子間を電気的に接続する場合に最短距離で配線する
ことができず、基板内の配線長が長くなるため、信号配
線の抵抗やキャパシタンス・インダクタンスが最短で配
線した場合に比べて大きくなってしまうという問題点が
あった。その結果、高速で動作させるべき信号の立ち上
がりが遅くなり、またノイズも増加してしまうという問
題点があった これに対して、例えば特開昭59−86248 号公報には、第
1の方向に走る配線群を有する第1の配線層、第1の方
向と垂直な第2の方向に平行に走る配線群を有する第2
の配線層、第1の方向とは斜めの第3の方向に走る配線
群を有する体3の配線層、および第3の方向と垂直な第
4の方向に走る配線群を有する第4の配線層を相互間に
絶縁層を挟んで重畳してなる多層配線基板が開示されて
いる。これによれば、互いに直交する配線群を有する2
枚の絶縁層と、これらの配線群と斜めに交差しかつ互い
に直交する2枚の配線群とを各配線層間に絶縁層を挟ん
で重畳して構成したので、従来の配線格子よりも2端子
間の接続線長を短くすることができ、接続線間のクロス
トークを少なくすることができるというものである。す
なわち、X方向およびY方向の配線群以外に斜め方向の
配線群を有する配線層を加えることにより、配線接続の
自由度が上がり、X方向およびY方向の配線群のみを有
する多層配線基板に比べて接続配線長を短くすることが
できるというものである。
However, since the wiring direction of each parallel wiring in the conventional multilayer wiring board is composed of a so-called X direction and a Y direction which are orthogonal to each other, these orthogonal wirings in the multilayer wiring board are not included. When the electrode terminals of the desired semiconductor element and the connection terminals of the mounting board are electrically connected via the parallel wiring group, the wiring cannot be made in the shortest distance, and the wiring length in the substrate becomes longer, so that the signal There is a problem in that the resistance, capacitance, and inductance of the wiring are increased as compared with the case where the wiring is shortest. As a result, there has been a problem that the rise of a signal to be operated at a high speed is delayed and the noise is increased. On the other hand, for example, Japanese Patent Application Laid-Open No. 59-86248 discloses a first direction. A first wiring layer having a group of wirings running, and a second having a group of wirings running parallel to a second direction perpendicular to the first direction.
Wiring layer, a wiring layer of the body 3 having a wiring group running in a third direction oblique to the first direction, and a fourth wiring having a wiring group running in a fourth direction perpendicular to the third direction. A multilayer wiring board in which layers are overlapped with an insulating layer interposed therebetween is disclosed. According to this, 2 having a group of wirings orthogonal to each other
Since one insulating layer and two wiring groups obliquely intersecting with these wiring groups and orthogonal to each other are overlapped with each other between the wiring layers with an insulating layer interposed therebetween, two terminals are provided as compared with the conventional wiring grid. The length of the connection line between them can be shortened, and crosstalk between the connection lines can be reduced. That is, by adding a wiring layer having a wiring group in an oblique direction in addition to a wiring group in the X and Y directions, the degree of freedom of wiring connection is increased, and compared to a multilayer wiring board having only a wiring group in the X and Y directions. Thus, the connection wiring length can be shortened.

【0008】しかしながら、特開昭59−86248 号公報に
開示された多層配線基板における第1および第2の配線
層と第3および第4の配線層とのように、ある配線層に
おける配線群の配線方向とその配線層の直上もしくは直
下の配線層における配線群の配線方向とが直交しておら
ず、配線同士が斜めに交差している場合には、それらの
配線間で不要な電磁的結合を持つこととなり、その結合
により上下の配線間にクロストークノイズが発生してし
まうという問題点があった。
However, as in the first and second wiring layers and the third and fourth wiring layers in the multilayer wiring board disclosed in Japanese Unexamined Patent Publication No. 59-86248, a wiring group in a certain wiring layer is When the wiring direction is not orthogonal to the wiring direction of the wiring group in the wiring layer immediately above or immediately below the wiring layer and the wirings obliquely intersect, unnecessary electromagnetic coupling between the wirings Therefore, there is a problem that the coupling causes crosstalk noise between the upper and lower wirings.

【0009】本発明は上記問題点に鑑み案出されたもの
であり、その目的は、交互に積層された平行配線群でも
って配線接続の自由度を減少させることなく端子間を最
短距離に近い距離で効率よく接続することができ、かつ
配線間のクロストークノイズを低減させることができ
る、高速で作動する半導体素子等の電子部品を搭載する
電子回路基板等に好適な多層配線基板を提供することに
ある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a parallel wiring group alternately stacked so that the distance between terminals is close to the shortest distance without reducing the degree of freedom of wiring connection. Provided is a multilayer wiring board suitable for an electronic circuit board or the like on which an electronic component such as a semiconductor element operating at a high speed can be efficiently connected at a distance and can reduce crosstalk noise between wirings. It is in.

【0010】[0010]

【課題を解決するための手段】本発明の多層配線基板
は、第1の平行配線群を有する第1の絶縁層上に前記第
1の平行配線群と直交する第2の平行配線群を有する第
2の絶縁層を積層して前記第1および第2の平行配線群
を第1の貫通導体群で電気的に接続して成る第1積層体
の上に、第3の平行配線群を有する第3の絶縁層上に前
記第3の平行配線群と直交する第4の平行配線群を有す
る第4の絶縁層を積層して前記第3および第4の平行配
線群を第2の貫通導体群で電気的に接続して成る第2積
層体を、前記第3の平行配線群を前記第1の平行配線群
に対して30〜60度に交差させて積層するとともに前
記第1または第2の平行配線群と前記第3または第4の
平行配線群とを前記導体層を貫通する第3の貫通導体群
で電気的に接続して成り、かつ前記第2および第3の平
行配線群間の間隔を前記第1および第2の平行配線群間
の間隔ならびに前記第3および第4の平行配線群間の間
隔より大きくしたことを特徴とするものである。
A multilayer wiring board according to the present invention has, on a first insulating layer having a first parallel wiring group, a second parallel wiring group orthogonal to the first parallel wiring group. A third parallel wiring group is provided on a first laminate formed by laminating a second insulating layer and electrically connecting the first and second parallel wiring groups with a first through conductor group. A fourth insulating layer having a fourth parallel wiring group orthogonal to the third parallel wiring group is laminated on a third insulating layer, and the third and fourth parallel wiring groups are connected to a second through conductor. A second stacked body electrically connected in a group, the third parallel wiring group being stacked so as to cross the first parallel wiring group at an angle of 30 to 60 degrees with the first parallel wiring group; Is electrically connected to the third or fourth parallel wiring group by a third through conductor group penetrating the conductor layer. And the distance between the second and third parallel wiring groups is larger than the distance between the first and second parallel wiring groups and the distance between the third and fourth parallel wiring groups. It is assumed that.

【0011】また本発明の多層配線基板は、上記構成に
おいて、前記第2および第3の平行配線群間の間隔を前
記第1および第2の平行配線群間の間隔ならびに前記第
3および第4の平行配線群間の間隔の1.1〜5倍とし
たことを特徴とするものである。
Further, in the multilayer wiring board according to the present invention, in the above structure, the distance between the second and third parallel wiring groups is changed to the distance between the first and second parallel wiring groups and the third and fourth parallel wiring groups. Is 1.1 to 5 times the distance between the parallel wiring groups.

【0012】さらに本発明の多層配線基板は、上記構成
において、前記第1〜第4の平行配線群は、それぞれ複
数の信号配線と、各信号配線に隣接する電源配線または
接地配線とを有することを特徴とするものである。
Further, in the multilayer wiring board according to the present invention, the first to fourth parallel wiring groups each include a plurality of signal wirings and a power supply wiring or a ground wiring adjacent to each signal wiring. It is characterized by the following.

【0013】本発明の多層回路基板によれば、第1積層
体における第1の平行配線群と第2の平行配線群とが、
および第2積層体における第3の平行配線群と第4の平
行配線群とがそれぞれ直交していることから、各積層体
の配線間におけるクロストークノイズを減少させて最小
とすることができる。また、第2積層体の第3および第
4の平行配線群が第1積層体の第1および第2の平行配
線群に対して30〜60度の斜め方向に配設されていること
から、平行配線群が直交するようにのみ配設されている
従来の多層配線基板に比べて、第1積層体の第1の平行
配線群から第2積層体の第4の平行配線群に至る端子間
の配線接続の自由度を減少させることなく端子間を最短
距離に近い距離で効率よく接続することができて接続配
線長を短くすることができ、第1積層体から第2積層体
にわたって端子間を接続する配線の抵抗・キャパシタン
ス・インダクタンスを小さくすることができる。
According to the multilayer circuit board of the present invention, the first parallel wiring group and the second parallel wiring group in the first laminate are
In addition, since the third parallel wiring group and the fourth parallel wiring group in the second stacked body are orthogonal to each other, crosstalk noise between the wirings of each stacked body can be reduced and minimized. Further, since the third and fourth parallel wiring groups of the second stacked body are arranged at an angle of 30 to 60 degrees with respect to the first and second parallel wiring groups of the first stacked body, Compared with a conventional multilayer wiring board in which parallel wiring groups are arranged only orthogonally, the terminals between the first parallel wiring group of the first stacked body and the fourth parallel wiring group of the second stacked body are different. It is possible to efficiently connect the terminals at a distance close to the shortest distance without reducing the degree of freedom of the wiring connection, and to reduce the connection wiring length, and to reduce the distance between the terminals from the first laminate to the second laminate. Can be reduced in resistance, capacitance, and inductance of the wiring connecting them.

【0014】さらに、互いに30〜60度の斜め方向に配設
される第2の平行配線群と第3の平行配線群間の間隔を
第1および第2の平行配線群間の間隔ならびに第3およ
び第4の平行配線群間の間隔より大きくしたことから、
第2の平行配線群と第3の平行配線群との間において、
さらには第1および第2の平行配線群と第3および第4
の平行配線群との間において生ずる不要な電磁的結合を
抑制して、第1積層体と第2積層体との間のクロストー
クノイズを十分に低減することができる。
Further, the distance between the second parallel wiring group and the third parallel wiring group disposed obliquely at an angle of 30 to 60 degrees with respect to each other is defined as the distance between the first and second parallel wiring groups and the third parallel wiring group. And the distance between the fourth parallel wiring groups is larger than
Between the second parallel wiring group and the third parallel wiring group,
Further, the first and second parallel wiring groups and the third and fourth parallel wiring groups
Unnecessary electromagnetic coupling between the first and second parallel wiring groups can be suppressed, and crosstalk noise between the first and second stacked bodies can be sufficiently reduced.

【0015】これにより、本発明の多層配線基板によれ
ば、配線接続の自由度を減少させることなく端子間を最
短距離に近い距離で効率よく接続することができ、高速
で作動する半導体素子等の電子部品を誤動作させること
なく正確かつ安定に動作させることができる。
Thus, according to the multilayer wiring board of the present invention, terminals can be efficiently connected at a distance close to the shortest distance without reducing the degree of freedom of wiring connection, and a semiconductor element or the like which operates at a high speed. Electronic components can be accurately and stably operated without malfunctioning.

【0016】[0016]

【発明の実施の形態】以下、本発明の多層配線基板につ
いて添付図面に示す実施例に基づき詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a multilayer wiring board according to the present invention will be described in detail based on an embodiment shown in the accompanying drawings.

【0017】図1は本発明の多層配線基板の実施の形態
の一例を示す分解平面図であり、同図(a)は第1の絶
縁層の、(b)は第2の絶縁層の、(c)は第3の絶縁
層の、(d)は第4の絶縁層の平面図をそれぞれ示して
いる。また、図2はこれらを積層して成る本発明の多層
配線基板の実施の形態の一例を示す要部断面図である。
FIG. 1 is an exploded plan view showing an example of an embodiment of a multilayer wiring board according to the present invention. FIG. 1 (a) shows a first insulating layer, FIG. 1 (b) shows a second insulating layer, and FIG. (C) is a plan view of the third insulating layer, and (d) is a plan view of the fourth insulating layer. FIG. 2 is a cross-sectional view of a main part showing an example of an embodiment of a multilayer wiring board of the present invention formed by laminating them.

【0018】これらの図において、I1〜I4はそれぞ
れ第1〜第4の絶縁層であり、I5は第4の絶縁層I4
の上に積層され、多層配線基板の表面層となる第5の絶
縁層である。L1〜L4はそれぞれ第1〜第4の絶縁層
I1〜I4の上面に略平行に配設された第1〜第4の平
行配線群であり、P1〜P4はそれぞれ第1〜第4の平
行配線群L1〜L4中の電源配線、G1〜G4はそれぞ
れ第1〜第4の平行配線群L1〜L4中の接地配線、S
1〜S4はそれぞれ第1〜第4の平行配線群L1〜L4
中の信号配線を示している。
In these figures, I1 to I4 are first to fourth insulating layers, respectively, and I5 is a fourth insulating layer I4.
And a fifth insulating layer which is laminated on the substrate and serves as a surface layer of the multilayer wiring board. L1 to L4 are first to fourth parallel wiring groups disposed substantially in parallel on the upper surfaces of the first to fourth insulating layers I1 to I4, respectively, and P1 to P4 are first to fourth parallel wiring groups, respectively. The power supply lines in the wiring groups L1 to L4, G1 to G4 are the ground wirings in the first to fourth parallel wiring groups L1 to L4, respectively,
1 to S4 are first to fourth parallel wiring groups L1 to L4, respectively.
The inside signal wiring is shown.

【0019】なお、同じ平面に配設された複数の信号配
線S1〜S4はそれぞれ異なる信号を伝送するものとし
てもよく、同じ平面に配設された複数の電源配線P1〜
P4はそれぞれ異なる電源を供給するものとしてもよい
ことは言うまでもない。
The plurality of signal wirings S1 to S4 arranged on the same plane may transmit different signals, respectively, and the plurality of power supply wirings P1 to P1 arranged on the same plane may be used.
It goes without saying that P4 may supply different power supplies.

【0020】このような多層配線基板には、例えばその
表面にMPU(Micro Processing Unit )・ASIC
(Application Specific Integrated Circuit )・DS
P(Digital Signal Processor)のような半導体素子等
の電子部品が搭載される。これらの電子部品は、例えば
いわゆるバンプ電極によりこの多層配線基板の表面に実
装されて、あるいは接着剤・ろう材等により搭載部に取
着されるとともにボンディングワイヤ等を介して、第4
の平行配線群L4等と電気的に接続される。なお、外部
電気回路との接続部ならびに搭載される半導体素子等の
電子部品との接続部は図示していない。
Such a multilayer wiring board has, for example, an MPU (Micro Processing Unit) / ASIC on its surface.
(Application Specific Integrated Circuit) DS
An electronic component such as a semiconductor element such as a P (Digital Signal Processor) is mounted. These electronic components are mounted on the surface of the multilayer wiring board by, for example, so-called bump electrodes, or are attached to a mounting portion by an adhesive, a brazing material, or the like, and are connected to a fourth wire via a bonding wire or the like.
Are electrically connected to the parallel wiring group L4 and the like. A connection portion with an external electric circuit and a connection portion with an electronic component such as a semiconductor element to be mounted are not shown.

【0021】多層配線基板の表面層となる第5の絶縁層
I5は必要に応じて形成されるものであり、例えば第4
の配線群L4が第4の絶縁層I4中に配設される場合な
どには必ずしも形成する必要はない。
The fifth insulating layer I5 serving as a surface layer of the multilayer wiring board is formed as necessary, and is, for example, a fourth insulating layer I5.
When the wiring group L4 is disposed in the fourth insulating layer I4, it is not always necessary to form the wiring group L4.

【0022】第1の絶縁層I1上の第1の平行配線群L
1は第1の方向に略平行に、第2の絶縁層I2上の第2
の平行配線群L2は第1の方向と直交する第2の方向に
略平行に配設されており、これにより第1積層体D1を
構成している。また、第3の絶縁層I3上の第3の平行
配線群L3は第1の方向に対して30〜60度の第3の方向
に略平行に、第4の絶縁層I4上の第4の平行配線群L
4は第3の方向と直交する(第2の方向に対して30〜60
度の)第4の方向に略平行に配設されており、これによ
り第2積層体D2を構成している。この例では第3の方
向を第1の方向に対して、また第4の方向を第2の方向
に対してそれぞれ略45度としている。
First parallel wiring group L on first insulating layer I1
1 is substantially parallel to the first direction, and the second on the second insulating layer I2
Are arranged substantially parallel to a second direction orthogonal to the first direction, thereby forming a first stacked body D1. Further, the third parallel wiring group L3 on the third insulating layer I3 is substantially parallel to the third direction of 30 to 60 degrees with respect to the first direction, and is connected to the fourth parallel wiring group L3 on the fourth insulating layer I4. Parallel wiring group L
4 is orthogonal to the third direction (30 to 60 with respect to the second direction).
The second stack D2 is disposed substantially parallel to the fourth direction. In this example, the third direction is approximately 45 degrees with respect to the first direction, and the fourth direction is approximately 45 degrees with respect to the second direction.

【0023】このように第1の方向に対して第3の方向
を30〜60度の斜め方向に設定することにより、第1〜第
4の平行配線群L1〜L4を直交する平行配線群のみと
して構成した場合に比べて、第1の平行配線群L1から
第4の平行配線群L4に至る端子間の接続配線長を約20
%短くすることができる。また、第1の方向に対して第
3の方向を好適には40〜50度に設定することで配線長を
より短くすることができ、略45度に設定することで配線
長は約30%短くすることができ、抵抗やキャパシタンス
・インダクタンスも約30%程度低減することができて、
最適な配線構造となる。
As described above, by setting the third direction to the oblique direction of 30 to 60 degrees with respect to the first direction, the first to fourth parallel wiring groups L1 to L4 can be changed only to the parallel wiring groups orthogonal to each other. In comparison with the case where the configuration is made as described above, the connection wiring length between the terminals from the first parallel wiring group L1 to the fourth parallel wiring group L4 is about 20.
% Can be shortened. Also, by setting the third direction to preferably 40 to 50 degrees with respect to the first direction, the wiring length can be further shortened. Can be shortened, and the resistance, capacitance and inductance can be reduced by about 30%.
An optimal wiring structure is obtained.

【0024】また、この例では第1〜第4の平行配線群
L1〜L4は、信号配線S1〜S4に電源配線P1〜P
4または接地配線G1〜G4がそれぞれ隣接するように
配設されている。これにより、同じ絶縁層I1〜I4上
の信号配線S1〜S4間を電磁的に遮断して、同じ平面
上の左右の信号配線S1〜S4間のクロストークノイズ
を良好に低減することができる。さらに、信号配線S1
〜S4に必ず電源配線P1〜P4または接地配線G1〜
G4を隣接させることで、同じ平面上の電源配線P1〜
P4と信号配線S1〜S4および接地配線G1〜G4と
信号配線S1〜S4との相互作用が最大となり、電源配
線P1〜P4および接地配線G1〜G4のインダクタン
スを減少させることができる。このインダクタンスの減
少により、電源ノイズおよび接地ノイズを効果的に低減
することができる。
In this example, the first to fourth parallel wiring groups L1 to L4 are formed by connecting the power wirings P1 to P4 to the signal wirings S1 to S4.
4 or ground wirings G1 to G4 are arranged adjacent to each other. Thereby, the signal wirings S1 to S4 on the same insulating layers I1 to I4 are electromagnetically cut off, and crosstalk noise between the left and right signal wirings S1 to S4 on the same plane can be reduced favorably. Further, the signal wiring S1
To S4, power lines P1 to P4 or ground lines G1 to G4.
By making G4 adjacent, power supply wirings P1 to P1 on the same plane
The interaction between P4 and the signal lines S1 to S4, and the ground lines G1 to G4 and the signal lines S1 to S4 is maximized, and the inductance of the power lines P1 to P4 and the ground lines G1 to G4 can be reduced. Due to this reduction in inductance, power supply noise and ground noise can be effectively reduced.

【0025】T1〜T3はそれぞれビア導体やスルーホ
ール導体等の第1〜第3の貫通導体群であり、第1の貫
通導体群T1(丸で示す)は第1の平行配線群L1と同
じ電位やファンクションの第2の平行配線群L2とを、
第2の貫通導体群T2(四角で示す)は第3の平行配線
群L3と第4の平行配線群L4とを、第3の貫通導体群
T3(二重丸で示す)は第1または第2の平行配線群L
1・L2と第3または第4の平行配線群L3・L4と
を、それぞれの配線群間の絶縁層を貫通して電気的に接
続している。なお、ここでは第3の貫通導体群T3によ
り第2の平行配線群L2と第3の平行配線群L3とを接
続している例を示している。また、図2においては貫通
導体群は図示していない。
T1 to T3 are first to third through conductor groups such as via conductors and through hole conductors, respectively. The first through conductor group T1 (shown by a circle) is the same as the first parallel wiring group L1. The second parallel wiring group L2 of the potential and the function is
The second through conductor group T2 (indicated by a square) corresponds to the third parallel wiring group L3 and the fourth parallel wiring group L4, and the third through conductor group T3 (indicated by a double circle) corresponds to the first or the second. 2 parallel wiring groups L
The first and fourth parallel wiring groups L3 and L4 are electrically connected to each other through the insulating layer between the respective wiring groups. Here, an example is shown in which the second parallel wiring group L2 and the third parallel wiring group L3 are connected by the third through conductor group T3. Further, the through conductor group is not shown in FIG.

【0026】これら第1〜第3の貫通導体群T1〜T3
と同様の貫通導体群は、各平行配線群の配線と半導体素
子または多層配線基板の表面に取着された外部接続端子
等とを電気的に接続する場合にも用いられる。
The first to third through conductor groups T1 to T3
The through conductor group similar to the above is also used when electrically connecting the wiring of each parallel wiring group to an external connection terminal or the like attached to the surface of the semiconductor element or the multilayer wiring board.

【0027】そして、本発明の多層配線基板によれば、
図2に示すように、第2および第3の平行配線群L2・
L3間の間隔h2を第1および第2の平行配線群L1・
L2間の間隔h1ならびに第3および第4の平行配線群
L3・L4間の間隔h1’より大きく(h2>h1,h
1’)している。この例では、第2および第3の平行配
線群L2・L3間に位置する第3の絶縁層I3の厚みを
第1および第2の平行配線群L1・L2間に位置する第
2の絶縁層I2の厚みならびに第3および第4の平行配
線群L3・L4間に位置する第4の絶縁層I4の厚みよ
りも大きくすることにより、各平行配線群間の間隔を上
記のように設定している。これにより異なる積層体間の
第2および第3の平行配線群L2・L3間の不要な結合
を、同じ積層体内において上下に位置する第1および第
2の平行配線群L1・L2間ならびに第3および第4の
平行配線群L3・L4間における結合と同程度にまで低
減させることができ、接続配線の自由度を減少させるこ
となく第1・第2積層体D1・D2間におけるクロスト
ークノイズを十分に低減することができる。
According to the multilayer wiring board of the present invention,
As shown in FIG. 2, the second and third parallel wiring groups L2.
The distance h2 between L3 and the first and second parallel wiring groups L1.
The distance h1 between L2 and the distance h1 ′ between the third and fourth parallel wiring groups L3 and L4 are larger than (h2> h1, h
1 '). In this example, the thickness of the third insulating layer I3 located between the second and third parallel wiring groups L2 and L3 is increased by the second insulating layer located between the first and second parallel wiring groups L1 and L2. By setting the thickness of I2 and the thickness of the fourth insulating layer I4 located between the third and fourth parallel wiring groups L3 and L4, the distance between the parallel wiring groups is set as described above. I have. As a result, unnecessary coupling between the second and third parallel wiring groups L2 and L3 between different stacked bodies is reduced between the first and second parallel wiring groups L1 and L2 located vertically above and below the third stacked wiring group in the same stacked body. And the coupling between the fourth parallel wiring groups L3 and L4 can be reduced to the same level as the coupling between the first and second stacked bodies D1 and D2 without reducing the degree of freedom of the connection wiring. It can be reduced sufficiently.

【0028】本発明の多層配線基板においてこのように
第2および第3の平行配線群L2・L3間の間隔h2を
第1および第2の平行配線群L1・L2間の間隔h1な
らびに第3および第4の平行配線群L3・L4間の間隔
h1’より大きく(h2>h1,h1’)する場合、間
隔h2は間隔h1,h1’より1.1 〜5倍の範囲内とす
るとよく、より好ましくは2〜3倍の範囲内とするとよ
い。このように設定することにより、電気的特性に悪影
響を与えるほど多層配線基板中の配線長を長くすること
なく上記の作用効果を有効に得ることができる。間隔h
2が間隔h1,h1’の1.1 倍未満の場合には上記のよ
うな作用効果が十分に得られない傾向がある。また、間
隔h2が間隔h1,h1’の5倍を超えると、第1積層
体D1と第2積層体D2との間の配線である第3の貫通
導体群T3の長さが長くなりすぎて、信号配線の抵抗や
キャパシタンス・インダクタンスが大きくなって信号の
立ち上がりが遅くなり、またノイズも増加してしまう傾
向がある。
In the multilayer wiring board of the present invention, the distance h2 between the second and third parallel wiring groups L2 and L3 is set to the distance h1 between the first and second parallel wiring groups L1 and L2 and the third and When the distance h1 ′ between the fourth parallel wiring groups L3 and L4 is larger than the distance h1 ′ (h2> h1, h1 ′), the distance h2 should be within a range of 1.1 to 5 times the distance h1, h1 ′, and more preferably. It is good to make it into the range of 2-3 times. By setting in this way, the above-described effects can be effectively obtained without increasing the wiring length in the multilayer wiring board so as to adversely affect the electrical characteristics. Interval h
When the distance 2 is less than 1.1 times the distances h1 and h1 ', there is a tendency that the above effects cannot be sufficiently obtained. If the interval h2 exceeds five times the intervals h1 and h1 ', the length of the third through conductor group T3, which is the wiring between the first stacked body D1 and the second stacked body D2, becomes too long. In addition, the resistance, capacitance, and inductance of the signal wiring are increased, so that the rise of the signal is delayed, and the noise tends to increase.

【0029】例えば、各絶縁層I1〜I4に同じ誘電体
材料を用いて、間隔h2を200 μmとし、間隔h1,h
1’を150 μmとした場合、第2の平行配線群L2と第
3の平行配線群L3間のクロストークノイズは約40%低
減させることができた。
For example, the same dielectric material is used for each of the insulating layers I1 to I4, the interval h2 is set to 200 μm, and the intervals h1, h
When 1 ′ is 150 μm, crosstalk noise between the second parallel wiring group L2 and the third parallel wiring group L3 can be reduced by about 40%.

【0030】なお、間隔h1と間隔h1’との大きさは
通常は同じとすればよいが、これらの大きさは一方が他
方の1.1 〜2倍の大きさとなる範囲内で異ならせていて
もよい。
The size of the interval h1 and the interval h1 'may be usually the same, but they may be different within a range in which one is 1.1 to 2 times as large as the other. Good.

【0031】なお、このような本発明の多層配線基板
は、第2積層体D2の上に、第1積層体D1上に第2積
層体D2を積層したのと同様の配線構造によって、上面
に第3の方向に対して30〜60度の第5の方向に略平行に
配設された第5の平行配線群を有する第5の絶縁層と、
その上に上面に第5の方向と直交する第6の方向に略平
行に配設された第6の平行配線群を有する第6の絶縁層
を積層するとともにその上下の平行配線群を第4の貫通
導体群で電気的に接続して成る第3積層体を積層し、第
2積層体D2の第3または第4の平行配線群L3・L4
と第3積層体の第5または第6の平行配線群を第5の貫
通導体群で電気的に接続し、かつ第4および第5の平行
配線群間の間隔を第3および第4の平行配線群L3・L
4間の間隔ならびに第5および第6の平行配線群間の間
隔よりも大きくした、第1積層体D1〜第3積層体で構
成された多層配線基板としてもよく、このような積層配
線構造を繰り返してさらに多層構造の多層配線基板とし
てもよい。
The multilayer wiring board of the present invention has a wiring structure similar to that obtained by laminating the second laminated body D2 on the first laminated body D1 on the second laminated body D2. A fifth insulating layer having a fifth parallel wiring group disposed substantially parallel to a fifth direction at 30 to 60 degrees with respect to the third direction;
A sixth insulating layer having a sixth parallel wiring group disposed substantially parallel to a sixth direction orthogonal to the fifth direction on the upper surface is laminated thereon, and the upper and lower parallel wiring groups are connected to the fourth insulating layer. And a third or fourth parallel wiring group L3 / L4 of the second stacked body D2.
And the fifth or sixth parallel wiring group of the third stacked body are electrically connected by the fifth through conductor group, and the distance between the fourth and fifth parallel wiring groups is set to the third and fourth parallel wiring groups. Wiring group L3 · L
A multilayer wiring board composed of the first laminate D1 to the third laminate, which is larger than the distance between the fourth and fourth and sixth and fifth parallel wiring groups, may be used. It may be repeated to form a multilayer wiring board having a multilayer structure.

【0032】また、本発明の多層配線基板においては、
第1・第2積層体D1・D2の上下には種々の配線構造
の多層配線部を積層して多層配線基板を構成してもよ
い。例えば、積層配線体と同様に平行配線群を直交させ
て積層した構成の配線構造、あるいはストリップ線路構
造の配線構造、その他、マイクロストリップ線路構造・
コプレーナ線路構造等を多層配線基板に要求される仕様
等に応じて適宜選択して用いることができる。
In the multilayer wiring board of the present invention,
Multilayer wiring portions having various wiring structures may be stacked on and under the first and second stacked bodies D1 and D2 to form a multilayer wiring board. For example, a wiring structure having a configuration in which parallel wiring groups are orthogonally stacked like a multilayer wiring body, a wiring structure having a strip line structure, a microstrip line structure,
The coplanar line structure or the like can be appropriately selected and used according to the specifications required for the multilayer wiring board.

【0033】また例えば、ポリイミド絶縁層と銅蒸着に
よる導体層といったものを積層して電子回路を構成して
もよい。また、チップ抵抗・薄膜抵抗・コイルインダク
タ・クロスコンデンサ・チップコンデンサ・電解コンデ
ンサといったものを取着して半導体素子収納用パッケー
ジを構成してもよい。
For example, an electronic circuit may be formed by laminating a polyimide insulating layer and a conductor layer formed by vapor deposition of copper. Further, a package for semiconductor element accommodation may be configured by attaching a chip resistor, a thin film resistor, a coil inductor, a cross capacitor, a chip capacitor, and an electrolytic capacitor.

【0034】また、第1〜第4の絶縁層I1〜I4を始
めとする各絶縁層の形状は、図示したような略正方形状
のものに限られるものではなく、長方形状や菱形状・多
角形状等の形状であってもよい。
The shape of each insulating layer including the first to fourth insulating layers I1 to I4 is not limited to a substantially square shape as shown, but may be a rectangular shape, a rhombic shape, a polygonal shape, or the like. It may be a shape such as a shape.

【0035】なお、第1〜第4の平行配線群L1〜L4
は、第1〜第4の絶縁層I1〜I4の表面に形成するも
のに限られず、それぞれの絶縁層I1〜I4の内部に形
成したものであってもよい。このように、図1および図
2に示した例に対して第4の平行配線群L4を第4の絶
縁層I4の内部に形成した場合には、第5の絶縁層I5
は必ずしも必要ではないものとなる。
The first to fourth parallel wiring groups L1 to L4
Is not limited to those formed on the surfaces of the first to fourth insulating layers I1 to I4, and may be formed inside the respective insulating layers I1 to I4. Thus, when the fourth parallel wiring group L4 is formed inside the fourth insulating layer I4 with respect to the example shown in FIGS. 1 and 2, the fifth insulating layer I5
Is not always necessary.

【0036】本発明の多層配線基板において、第1〜第
4の絶縁層I1〜I4および第5の絶縁層I5は、例え
ばセラミックグリーンシート積層法によって、酸化アル
ミニウム質焼結体や窒化アルミニウム質焼結体・炭化珪
素質焼結体・窒化珪素質焼結体・ムライト質焼結体・ガ
ラスセラミックス等の無機絶縁材料を使用して、あるい
はポリイミド・エポキシ樹脂・フッ素樹脂・ポリノルボ
ルネン・ベンゾシクロブテン等の有機絶縁材料を使用し
て、あるいはセラミックス粉末等の無機絶縁物粉末をエ
ポキシ系樹脂等の熱硬化性樹脂で結合して成る複合絶縁
材料などの電気絶縁材料を使用して形成される。
In the multilayer wiring board of the present invention, the first to fourth insulating layers I1 to I4 and the fifth insulating layer I5 are formed by, for example, a ceramic green sheet laminating method using an aluminum oxide sintered body or an aluminum nitride sintered body. Using inorganic insulating materials such as sintered body, silicon carbide sintered body, silicon nitride sintered body, mullite sintered body, glass ceramics, or polyimide, epoxy resin, fluorine resin, polynorbornene, benzocyclobutene Or an electric insulating material such as a composite insulating material formed by bonding an inorganic insulating powder such as a ceramic powder with a thermosetting resin such as an epoxy resin.

【0037】これら絶縁層I1〜I5は、例えば酸化ア
ルミニウム質焼結体から成る場合であれば、酸化アルミ
ニウム・酸化珪素・酸化カルシウム・酸化マグネシウム
等の原料粉末に適当な有機バインダ・溶剤等を添加混合
して泥漿状となすとともに、これを従来周知のドクター
ブレード法を採用してシート状となすことによってセラ
ミックグリーンシートを得て、しかる後、これらのセラ
ミックグリーンシートに適当な打ち抜き加工を施すとと
もに各平行配線群および各貫通導体群ならびに導体層と
なる金属ペーストを所定のパターンに印刷塗布して上下
に積層し、最後にこの積層体を還元雰囲気中、約1600℃
の温度で焼成することによって製作される。
If the insulating layers I1 to I5 are made of, for example, a sintered body of aluminum oxide, an appropriate organic binder, a solvent or the like is added to a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide or the like. A ceramic green sheet is obtained by mixing and forming a slurry into a sheet shape by employing a conventionally known doctor blade method, and thereafter, these ceramic green sheets are subjected to an appropriate punching process. Each parallel wiring group and each through conductor group and a metal paste to be a conductor layer are printed and applied in a predetermined pattern and laminated vertically, and finally the laminated body is heated at about 1600 ° C. in a reducing atmosphere.
It is manufactured by firing at a temperature of

【0038】これら絶縁層I1〜I5の厚みとしては、
使用する材料の特性に応じて、要求される仕様に対応す
る機械的強度や電気的特性・貫通導体群の形成の容易さ
等の条件を満たすように適宜設定される。
The thicknesses of these insulating layers I1 to I5 are as follows.
In accordance with the characteristics of the material to be used, it is appropriately set so as to satisfy conditions such as mechanical strength and electrical characteristics corresponding to required specifications, ease of forming a through conductor group, and the like.

【0039】また、第1〜第4の平行配線群L1〜L4
・第1〜第3の貫通導体群T1〜T3は、例えばタング
ステンやモリブデン・モリブデン−マンガン・銅・銀・
銀−パラジウム等の金属粉末メタライズ、あるいは銅・
銀・ニッケル・クロム・チタン・金・ニオブやそれらの
合金等の金属材料の薄膜などから成る。
The first to fourth parallel wiring groups L1 to L4
The first to third through conductor groups T1 to T3 are made of, for example, tungsten, molybdenum, molybdenum-manganese, copper, silver,
Metallization of metal powder such as silver-palladium, or copper
It is composed of a thin film of a metal material such as silver, nickel, chromium, titanium, gold, niobium, and alloys thereof.

【0040】例えば、タングステンの金属粉末メタライ
ズから成る場合であれば、タングステン粉末に適当な有
機バインダ・溶剤等を添加混合して得た金属ペーストを
絶縁層I1〜I4となるセラミックグリーンシートに所
定のパターンに印刷塗布し、これをセラミックグリーン
シートの積層体とともに焼成することによって、各絶縁
層I1〜I4の上面に配設される。
For example, in the case of metallization of metal powder of tungsten, a metal paste obtained by adding and mixing an appropriate organic binder, solvent and the like to the tungsten powder is applied to a ceramic green sheet to be the insulating layers I1 to I4. The pattern is printed and applied, and is fired together with the laminate of the ceramic green sheets, thereby being disposed on the upper surfaces of the insulating layers I1 to I4.

【0041】また,金属材料の薄膜から成る場合であれ
ば、例えばスパッタリング法・真空蒸着法またはメッキ
法により金属層を形成した後、フォトリソグラフィ法に
より所定の配線パターンに形成される。第1〜第4の平
行配線群L1〜L4の各配線の幅および配線間の間隔
は、使用する材料の特性に応じて、要求される仕様に対
応する電気的特性や絶縁層I1〜I4への配設の容易さ
等の条件を満たすように適宜設定される。
In the case of a thin film of a metal material, a metal layer is formed by, for example, a sputtering method, a vacuum evaporation method, or a plating method, and then a predetermined wiring pattern is formed by a photolithography method. The width of each wiring and the distance between the wirings of the first to fourth parallel wiring groups L1 to L4 may be changed according to the characteristics of the material to be used to the electrical characteristics corresponding to the required specifications and the insulating layers I1 to I4. Are set appropriately so as to satisfy conditions such as ease of disposition.

【0042】なお、各平行配線群L1〜L4の厚みは1
〜10μm程度とすることが好ましい。この厚みが1μm
未満となると配線の抵抗が大きくなるため、配線群によ
る半導体素子への良好な電源供給や安定したグランドの
確保・良好な信号の伝搬が困難となる傾向が見られる。
他方、10μmを超えるとその上に積層される絶縁層によ
る被覆が不十分となって絶縁不良となる場合がある。
The thickness of each of the parallel wiring groups L1 to L4 is 1
It is preferably about 10 μm. This thickness is 1 μm
When the value is less than the above, the resistance of the wiring increases, and it tends to be difficult to provide a good power supply to the semiconductor element by the wiring group, secure a stable ground, and propagate a good signal.
On the other hand, if it exceeds 10 μm, the insulation layer laminated thereon may be insufficiently covered, resulting in poor insulation.

【0043】またこのとき、各配線をその厚みが幅より
も大きな断面形状を有するものとすると、隣接する配線
間の結合をさらに大きくして上または下の配線との間の
結合を抑えてその影響を受けにくくするのにより好適な
ものとなる。このように配線の厚みを幅よりも大きくす
る場合は、その厚みと幅の比を1.1 :1〜2:1(厚み
を幅に対して1.1 倍〜2倍)とし、より好ましくは厚み
と幅の比を1.2 :1〜1.7 :1(厚みを幅に対して1.2
倍〜1.7 倍)とすることにより、絶縁層間の密着強度を
充分に保ちながら所望の基板形状とすることができる。
At this time, if each wiring has a cross-sectional shape whose thickness is larger than the width, the coupling between the adjacent wirings is further increased to suppress the coupling between the upper and lower wirings and the wiring is formed. This is more preferable because it is less likely to be affected. When the thickness of the wiring is larger than the width, the ratio of the thickness to the width is set to 1.1: 1 to 2: 1 (the thickness is 1.1 to 2 times the width), and more preferably the thickness and the width. Ratio of 1.2: 1 to 1.7: 1 (thickness to width is 1.2
By adjusting the ratio to a factor of 1.7 to 1.7), a desired substrate shape can be obtained while the adhesion strength between the insulating layers is sufficiently maintained.

【0044】第1〜第3の貫通導体群T1〜T3の各貫
通導体は、横断面形状が円形のものの他にも楕円形や正
方形・長方形等の矩形、その他の異形状のものを用いて
もよい。その位置や大きさは、使用する材料の特性に応
じて、要求される仕様に対応する電気的特性や絶縁層I
1〜I4への形成・配設の容易さ等の条件を満たすよう
に適宜設定される。
As the through conductors of the first to third through conductor groups T1 to T3, not only those having a circular cross section but also ellipses, rectangles such as squares and rectangles, and other shapes are used. Is also good. The position and size are determined according to the characteristics of the material to be used by the electrical characteristics and the insulating layer I corresponding to the required specifications.
It is set appropriately so as to satisfy conditions such as easiness of formation / arrangement to 1 to I4.

【0045】例えば、絶縁層に酸化アルミニウム質焼結
体を用い、平行配線群にタングステンの金属メタライズ
を用いた場合であれば、絶縁層の厚みを200 μmとし、
配線の線幅を100 μm、配線間の間隔を150 μm、貫通
導体の大きさを100 μmとすることによって、信号配線
のインピーダンスを50Ωとし、上下の平行配線群間を高
周波信号の反射を抑えつつ電気的に接続することができ
る。
For example, if a sintered body of aluminum oxide is used for the insulating layer and a metallization of tungsten is used for the parallel wiring group, the thickness of the insulating layer is set to 200 μm.
By setting the wiring width to 100 μm, the spacing between the wirings to 150 μm, and the size of the through conductor to 100 μm, the impedance of the signal wiring is reduced to 50Ω, and the reflection of high-frequency signals between the upper and lower parallel wiring groups is suppressed. It is possible to make electrical connection.

【0046】なお、本発明は以上の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
で種々の変更を加えることは何ら差し支えない。例え
ば、上述の実施例では本発明を半導体素子を搭載する多
層配線基板として説明したが、これを半導体素子を収容
する半導体素子収納用パッケージに適用するものとして
もよい。
It should be noted that the present invention is not limited to the above-described embodiments, and that various changes may be made without departing from the spirit of the present invention. For example, in the above embodiment, the present invention has been described as a multilayer wiring board on which a semiconductor element is mounted. However, the present invention may be applied to a semiconductor element housing package for housing a semiconductor element.

【0047】[0047]

【発明の効果】本発明の多層回路基板によれば、第1積
層体における第1の平行配線群と第2の平行配線群とが
直交し、第2積層体における第3の平行配線群と第4の
平行配線群とが直交していることから、各積層体の配線
間におけるクロストークノイズを減少させて最小とする
ことができる。また、第2積層体の第3および第4の平
行配線群が第1積層体の第1および第2の平行配線群に
対して30〜60度の斜め方向に配設されていることから、
平行配線群が直交するようにのみ配設されている従来の
多層配線基板に比べて、第1積層体の第1の平行配線群
から第2積層体の第4の平行配線群に至る端子間の配線
接続の自由度を減少させることなく端子間を最短距離に
近い距離で効率よく接続することができて接続配線長を
短くすることができ、第1積層体から第2積層体にわた
って端子間を接続する配線の抵抗・キャパシタンス・イ
ンダクタンスを小さくすることができる。さらに、互い
に30〜60度の斜め方向に配設される第2の平行配線群と
第3の平行配線群間の間隔を第1および第2の平行配線
群間の間隔ならびに第3および第4の平行配線群間の間
隔より大きくしたことから、第2の平行配線群と第3の
平行配線群との間において、さらには第1および第2の
平行配線群と第3および第4の平行配線群との間におい
て生ずる不要な電磁的結合を抑制して、第1積層体と第
2積層体との間のクロストークノイズを十分に低減する
ことができる。その結果、配線接続の自由度を減少させ
ることなく端子間を最短距離に近い距離で効率よく接続
することができ、この多層配線基板に搭載される高速で
作動する半導体素子等の電子部品を誤動作させることな
く正確かつ安定に動作させることができる。
According to the multilayer circuit board of the present invention, the first parallel wiring group and the second parallel wiring group in the first laminate are orthogonal to each other, and the third parallel wiring group in the second laminate is Since the fourth parallel wiring group is orthogonal to the fourth parallel wiring group, crosstalk noise between the wirings of each stacked body can be reduced and minimized. Further, since the third and fourth parallel wiring groups of the second stacked body are arranged at an angle of 30 to 60 degrees with respect to the first and second parallel wiring groups of the first stacked body,
Compared with a conventional multilayer wiring board in which parallel wiring groups are arranged only orthogonally, the terminals between the first parallel wiring group of the first stacked body and the fourth parallel wiring group of the second stacked body are different. It is possible to efficiently connect the terminals at a distance close to the shortest distance without reducing the degree of freedom of the wiring connection, and to reduce the connection wiring length, and to reduce the distance between the terminals from the first laminate to the second laminate. Can be reduced in resistance, capacitance, and inductance of the wiring connecting them. Further, the distance between the second parallel wiring group and the third parallel wiring group disposed obliquely at an angle of 30 to 60 degrees with respect to each other, the distance between the first and second parallel wiring groups and the third and fourth parallel wiring groups. , The distance between the second parallel wiring group and the third parallel wiring group, and further, the first and second parallel wiring groups and the third and fourth parallel wiring groups. Unnecessary electromagnetic coupling generated between the wiring group is suppressed, and crosstalk noise between the first stacked body and the second stacked body can be sufficiently reduced. As a result, terminals can be efficiently connected at a distance close to the shortest distance without reducing the degree of freedom of wiring connection, and electronic components such as semiconductor elements operating at high speed mounted on this multilayer wiring board malfunction. The operation can be performed accurately and stably without causing the operation.

【0048】以上のように、本発明によれば、交互に積
層された平行配線群でもって配線接続の自由度を減少さ
せることなく端子間を最短距離に近い距離で効率よく接
続することができ、かつ配線間のクロストークノイズを
低減させることができる、高速で作動する半導体素子等
の電子部品を搭載する電子回路基板等に好適な多層配線
基板を提供することができた。
As described above, according to the present invention, it is possible to efficiently connect terminals with a distance close to the shortest distance without reducing the degree of freedom of wiring connection by using the parallel wiring groups alternately stacked. A multilayer wiring board suitable for an electronic circuit board or the like on which electronic parts such as a semiconductor element operating at a high speed can be mounted and which can reduce crosstalk noise between wirings can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)〜(d)は、それぞれ本発明の多層配線
基板の実施の形態の一例を示す各絶縁層毎の平面図であ
る。
FIGS. 1A to 1D are plan views of respective insulating layers, each showing an example of an embodiment of a multilayer wiring board of the present invention.

【図2】本発明の多層配線基板の実施の形態の一例を示
す要図断面図である。
FIG. 2 is a cross-sectional view of the essential part showing an example of the embodiment of the multilayer wiring board of the present invention.

【符号の説明】[Explanation of symbols]

I1〜I4・・・・第1〜第4の絶縁層 L1〜L4・・・・第1〜第4の平行配線群 P1〜P4・・・・第1〜第4の電源配線 G1〜G4・・・・第1〜第4の接地配線 S1〜S4・・・・第1〜第4の信号配線 T1〜T3・・・・第1〜第3の貫通導体群 D1、D2・・・・第1積層体、第2積層体 h1・・・・・・・第1および第2の平行配線群間の間
隔 h1’・・・・・・第3および第4の平行配線群間の間
隔 h2・・・・・・・第2および第3の平行配線群間の間
I1 to I4... First to fourth insulating layers L1 to L4... First to fourth parallel wiring groups P1 to P4... First to fourth power supply wirings G1 to G4. ... First to fourth ground wirings S1 to S4... First to fourth signal wirings T1 to T3... First to third through conductor groups D1, D2. One stacked body, second stacked body h1... Distance between first and second parallel wiring groups h1 ′... Distance between third and fourth parallel wiring groups h2. ..... distance between second and third parallel wiring groups

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 第1の平行配線群を有する第1の絶縁層
上に前記第1の平行配線群と直交する第2の平行配線群
を有する第2の絶縁層を積層して前記第1および第2の
平行配線群を第1の貫通導体群で電気的に接続して成る
第1積層体の上に、第3の平行配線群を有する第3の絶
縁層上に前記第3の平行配線群と直交する第4の平行配
線群を有する第4の絶縁層を積層して前記第3および第
4の平行配線群を第2の貫通導体群で電気的に接続して
成る第2積層体を、前記第3の平行配線群を前記第1の
平行配線群に対して30〜60度に交差させて積層する
とともに前記第1または第2の平行配線群と前記第3ま
たは第4の平行配線群とを前記導体層を貫通する第3の
貫通導体群で電気的に接続して成り、かつ前記第2およ
び第3の平行配線群間の間隔を前記第1および第2の平
行配線群間の間隔ならびに前記第3および第4の平行配
線群間の間隔より大きくしたことを特徴とする多層配線
基板。
A first insulating layer having a first parallel wiring group and a second insulating layer having a second parallel wiring group orthogonal to the first parallel wiring group are laminated on the first insulating layer; A second parallel wiring group electrically connected by a first through conductor group; and a third parallel wiring group on a third insulating layer having a third parallel wiring group. A second stacked structure in which a fourth insulating layer having a fourth parallel wiring group orthogonal to the wiring group is stacked, and the third and fourth parallel wiring groups are electrically connected by a second through conductor group. The body is laminated with the third parallel wiring group crossing the first parallel wiring group at an angle of 30 to 60 degrees, and the first or second parallel wiring group and the third or fourth parallel wiring group are stacked. A third group of parallel wirings electrically connected to the group of parallel wirings by a third group of penetrating conductors penetrating the conductor layer; and the second and third group of parallel wirings A multi-layer wiring board, wherein a distance between the first and second parallel wiring groups and a distance between the third and fourth parallel wiring groups are larger than each other.
【請求項2】 前記第2および第3の平行配線群間の間
隔を前記第1および第2の平行配線群間の間隔ならびに
前記第3および第4の平行配線群間の間隔の1.1〜5
倍としたことを特徴とする請求項1記載の多層配線基
板。
2. The distance between the second and third parallel wiring groups is 1.1 times the distance between the first and second parallel wiring groups and the distance between the third and fourth parallel wiring groups. ~ 5
2. The multilayer wiring board according to claim 1, wherein the number is doubled.
【請求項3】 前記第1〜第4の平行配線群は、それぞ
れ複数の信号配線と、各信号配線に隣接する電源配線ま
たは接地配線とを有することを特徴とする請求項1記載
の多層配線基板。
3. The multi-layer wiring according to claim 1, wherein each of the first to fourth parallel wiring groups has a plurality of signal wirings and a power supply wiring or a ground wiring adjacent to each signal wiring. substrate.
JP24409499A 1999-08-30 1999-08-30 Multilayer wiring board Pending JP2001068593A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24409499A JP2001068593A (en) 1999-08-30 1999-08-30 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24409499A JP2001068593A (en) 1999-08-30 1999-08-30 Multilayer wiring board

Publications (1)

Publication Number Publication Date
JP2001068593A true JP2001068593A (en) 2001-03-16

Family

ID=17113668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24409499A Pending JP2001068593A (en) 1999-08-30 1999-08-30 Multilayer wiring board

Country Status (1)

Country Link
JP (1) JP2001068593A (en)

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