JP2012099587A - Wiring board - Google Patents

Wiring board Download PDF

Info

Publication number
JP2012099587A
JP2012099587A JP2010244852A JP2010244852A JP2012099587A JP 2012099587 A JP2012099587 A JP 2012099587A JP 2010244852 A JP2010244852 A JP 2010244852A JP 2010244852 A JP2010244852 A JP 2010244852A JP 2012099587 A JP2012099587 A JP 2012099587A
Authority
JP
Japan
Prior art keywords
pair
conductors
hole
external connection
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010244852A
Other languages
Japanese (ja)
Other versions
JP5565958B2 (en
Inventor
Hisayoshi Wada
久義 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera SLC Technologies Corp
Original Assignee
Kyocera SLC Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera SLC Technologies Corp filed Critical Kyocera SLC Technologies Corp
Priority to JP2010244852A priority Critical patent/JP5565958B2/en
Publication of JP2012099587A publication Critical patent/JP2012099587A/en
Application granted granted Critical
Publication of JP5565958B2 publication Critical patent/JP5565958B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which allows a signal to travel properly, and in which even when a signal traveling along a pair of transmission lines has a high frequency, e.g. over 35 GHz, the reflection loss of the signal and the insertion loss thereof are small and resonance is less prone to being caused.SOLUTION: The wiring board comprises: a pair of belt-shape wiring conductors 80a and 80b; a pair of external connection pads 60a and 60b; a pair of via conductors 41a, 41b, 42a, 42b, 44a, 44b, 45a and 45b and a pair of through-hole conductors 43a and 43b, through which the pair of belt-shape wiring conductors 80a and 80b, and the pair of external connection pads 60a and 60b are connected; grounded or power source conductor layers 91-96 having oval openings 91a-96a surrounding the pair of via-hole conductors 41a, 41b, 42a, 42b, 44a, 44b, 45a and 45b or the pair of through-hole conductors 43a and 43b; and an insulating plate 13. The pitch of the pair of through-hole conductors 43a and 43b is smaller than that of the pair of external connection pads 60a and 60b. With respect to the openings 91a-96a, the openings located on the side of an upper face of the insulating plate 13 are smaller in size, than the openings located on the side of a lower face of the insulating plate 13.

Description

本発明は、半導体集積回路素子等の半導体素子を搭載するための配線基板に関するものである。   The present invention relates to a wiring board for mounting a semiconductor element such as a semiconductor integrated circuit element.

従来、半導体素子を搭載するための小型の配線基板は、図4に示すように、スルーホール123を有する絶縁板113の上下面にビアホール121,122,124,125を有する複数の絶縁層111、112,114,115が積層されて成る絶縁基板110の表面および内部に配線導体用の複数の導体層131,132,133,134,135,136が配置されているとともにスルーホール123内に被着されたスルーホール導体143およびビアホール121,122,124,125内に被着されたビアホール導体141,142,144,145により上下の配線導体同士が接続された多層配線構造をしている。絶縁基板110の上面中央部には半導体素子Sの電極が半田バンプB1を介して電気的に接続される複数の半導体素子接続パッド150が形成されており、絶縁基板110の下面には外部電気回路基板の配線導体に半田ボールB2を介して電気的に接続される外部接続パッド160が形成されている。これらの半導体素子接続パッド150と外部接続パッド160とは、所定のもの同士が導体層131,132,133,134,135,136およびスルーホール導体123およびビアホール導体121,122,124,125により互いに電気的に接続されている。さらに、最上層の絶縁層111および導体層131の表面には半導体素子接続パッド150の中央部を露出させる開口部を有するソルダーレジスト層171が被着されており、最下層の絶縁層115および導体層136の表面には外部接続パッド160の中央部を露出させる開口部を有するソルダーレジスト層172が被着されている。   Conventionally, as shown in FIG. 4, a small wiring board for mounting a semiconductor element includes a plurality of insulating layers 111 having via holes 121, 122, 124, and 125 on the upper and lower surfaces of an insulating plate 113 having through holes 123. A plurality of conductor layers 131, 132, 133, 134, 135, 136 for wiring conductors are disposed on the surface and inside of the insulating substrate 110 formed by stacking 112, 114, and 115, and are deposited in the through holes 123. A multilayer wiring structure is formed in which the upper and lower wiring conductors are connected to each other by the through-hole conductor 143 and the via-hole conductors 141, 142, 144, and 145 attached in the via holes 121, 122, 124, and 125. A plurality of semiconductor element connection pads 150 to which the electrodes of the semiconductor element S are electrically connected via the solder bumps B1 are formed at the center of the upper surface of the insulating substrate 110, and an external electric circuit is formed on the lower surface of the insulating substrate 110. External connection pads 160 that are electrically connected to the wiring conductors of the substrate via solder balls B2 are formed. These semiconductor element connection pads 150 and external connection pads 160 are connected to each other by conductor layers 131, 132, 133, 134, 135, 136 and through-hole conductors 123 and via-hole conductors 121, 122, 124, 125. Electrically connected. Further, a solder resist layer 171 having an opening exposing the central portion of the semiconductor element connection pad 150 is deposited on the surfaces of the uppermost insulating layer 111 and the conductor layer 131, and the lowermost insulating layer 115 and the conductor are exposed. A solder resist layer 172 having an opening exposing the central portion of the external connection pad 160 is deposited on the surface of the layer 136.

この従来の配線基板においては、2本の帯状配線導体が対になって互いに差動線路として機能するペア伝送路を備えている。ペア伝送路は、高周波伝送における電気的ロスの少ない形態であり、高周波信号を伝送する伝送路として有用である。   This conventional wiring board is provided with a pair transmission path in which two strip-shaped wiring conductors function as a differential line. A pair transmission line is a form with little electric loss in high frequency transmission, and is useful as a transmission line which transmits a high frequency signal.

ここで、図4に示した従来の配線基板におけるペア伝送路の例を図5に示す。図5は、導体層131,132,133,134,135,136およびスルーホール導体143およびビアホール導体141,142,144,145の一部のみを抜き出したものを示した要部斜視図である。なお、ペア伝送路は通常、その周囲を接地または電源導体層により所定間隔で取り囲まれているが、この図5では、ペア伝送路を構成する信号配線のみを示しており、その周囲の接地または電源導体層は省略している。   Here, an example of a pair transmission path in the conventional wiring board shown in FIG. 4 is shown in FIG. FIG. 5 is a main part perspective view showing only a part of the conductor layers 131, 132, 133, 134, 135, 136, the through-hole conductor 143, and the via-hole conductors 141, 142, 144, 145 extracted. The pair transmission line is usually surrounded by a ground or power supply conductor layer at a predetermined interval. In FIG. 5, only the signal wirings constituting the pair transmission line are shown. The power supply conductor layer is omitted.

ペア伝送路は絶縁基板110の上面中央部に互いに隣接して配置された半導体素子接続パッドのペア150a,150bを有している。そしてこの半導体素子接続パッドのペア150a,150bからは細い帯状配線導体のペア180a,180bが絶縁基板110の外周部に向けて所定の間隔で延びている。帯状配線導体180a,180bは、その特性インピーダンスが概ね100Ωとなるように配置されている。そして帯状配線導体のペア180a,180bは、絶縁基板110の外周部において、その間隔がスルーホール導体のペア143a,143bに向けて広がっている。この間隔が広がった部分では、帯状配線導体のペア180a,180bの特性インピーダンスは100Ωよりも大きくなる。そして、帯状配線導体180a,180bの広がった端部がビアホール導体のペア141a,141bおよび142a,142bを介してスルーホール導体のペア143a,143bに接続されている。また、絶縁基板110の下面には、スルーホール導体のペア143a,143bに対応する位置に、スルーホール導体143a,143bのピッチと同じピッチで外部接続パッドのペア160a,160bが配置されている。そしてスルーホール導体143a,143bはビアホール導体のペア144a,144bおよび145a,145bを介して外部接続パッドのペア160a,160bに接続されている。   The pair transmission line has a pair of semiconductor element connection pads 150 a and 150 b disposed adjacent to each other at the center of the upper surface of the insulating substrate 110. From these semiconductor element connection pad pairs 150a and 150b, narrow strip-like wiring conductor pairs 180a and 180b extend toward the outer periphery of the insulating substrate 110 at a predetermined interval. The strip-shaped wiring conductors 180a and 180b are arranged so that their characteristic impedance is approximately 100Ω. The interval between the pair of strip-shaped wiring conductors 180a and 180b is widened toward the through-hole conductor pair 143a and 143b in the outer peripheral portion of the insulating substrate 110. In the portion where the interval is widened, the characteristic impedance of the pair of strip-shaped wiring conductors 180a and 180b becomes larger than 100Ω. The widened ends of the strip-like wiring conductors 180a and 180b are connected to the through-hole conductor pairs 143a and 143b via the via-hole conductor pairs 141a and 141b and 142a and 142b. On the lower surface of the insulating substrate 110, external connection pad pairs 160a and 160b are disposed at positions corresponding to the through-hole conductor pairs 143a and 143b at the same pitch as the through-hole conductors 143a and 143b. The through-hole conductors 143a and 143b are connected to the external connection pad pairs 160a and 160b via the via-hole conductor pairs 144a and 144b and 145a and 145b.

また上述したように、ペア伝送路はその周囲を接地または電源導体層により所定間隔で取り囲まれている。図6(a),(b)はペア伝送路およびそれを取り囲む接地または電源導体層の従来の例を示す要部上面図および要部断面図である。この例では、導体層131,132,133,134,135,136にペア伝送路を取り囲む接地または電源導体層191,192,193,194,195,196を備えている。これらの接地または電源導体層191,192,193,194,195,196には、ペア伝送路におけるビアホール導体のペア141a,141b、142a,142b、144a,144b、145a,145b、スルーホール導体のペア143a,143bおよび外部接続パッドのペア160a,160bを上面視で取り囲む大きさの長円形の開口部191a,192a,193a,194a,195a,196aが形成されている。このような開口部191a,192a,193a,194a,195a,196aを設けることにより、接地または電源導体層191,192,193,194,195,196とペア伝送路の外部接続パッドのペア160a,160bとの間の静電容量が低減され、それにより外部接続用パッドのペア160a,160bにおける信号の反射が抑制されて高周波信号を効率よく外部に伝送することが可能となる。   As described above, the pair transmission lines are surrounded by a ground or power supply conductor layer at a predetermined interval. 6 (a) and 6 (b) are a top view and a cross-sectional view of relevant parts showing a conventional example of a pair transmission line and a ground or power supply conductor layer surrounding the pair transmission line. In this example, the conductor layers 131, 132, 133, 134, 135, 136 are provided with ground or power supply conductor layers 191, 192, 193, 194, 195, 196 surrounding the pair transmission line. These ground or power conductor layers 191, 192, 193, 194, 195 and 196 include via hole conductor pairs 141 a, 141 b, 142 a, 142 b, 144 a, 144 b, 145 a, 145 b, and through hole conductor pairs in the pair transmission line. Oval openings 191a, 192a, 193a, 194a, 195a, 196a having a size surrounding the pair 143a, 143b and the external connection pad pair 160a, 160b in a top view are formed. By providing such openings 191a, 192a, 193a, 194a, 195a, 196a, pairs 160a, 160b of ground or power supply conductor layers 191, 192, 193, 194, 195, 196 and external connection pads of the pair transmission line , The reflection of the signal in the external connection pad pair 160a, 160b is suppressed, and a high-frequency signal can be efficiently transmitted to the outside.

このような従来の配線基板においては、ペア伝送路は、絶縁基板110の上面側をその中央部から外周部に向けて所定間隔で延びるとともに、絶縁基板110の外周部においてスルーホール導体のペア143a,143bに対応する間隔に広がり、そのピッチのままで外部接続パッドのペア160a,160bに接続されていた。すなわち、スルーホール導体143a,143bは外部接続パッドのペア160a,160bと同じピッチであり、そのピッチに対応する間隔まで帯状配線導体のペア180a,180bの間隔を広げる必要があった。そのため、帯状配線導体のペア180a,180bの間隔が広がる部分の長さが長くなるとともに、その端部における間隔が大きくなる。この間隔が大きいと特性インピーダンスの値が大きくなりやすい。   In such a conventional wiring substrate, the pair transmission line extends at a predetermined interval from the central portion toward the outer peripheral portion of the upper surface side of the insulating substrate 110, and the pair of through-hole conductors 143a in the outer peripheral portion of the insulating substrate 110. , 143b, and is connected to the external connection pad pair 160a, 160b while maintaining the pitch. That is, the through-hole conductors 143a and 143b have the same pitch as the external connection pad pairs 160a and 160b, and it is necessary to widen the interval between the strip-like wiring conductor pairs 180a and 180b to the interval corresponding to the pitch. Therefore, the length of the portion where the interval between the pair of strip-like wiring conductors 180a and 180b is widened is increased, and the interval at the end portion is increased. If this interval is large, the characteristic impedance value tends to increase.

ところが上述したように、帯状配線導体のペア180a,180bの間隔が広がる部分では、特性インピーダンスが大きくなるため、この部分の長さが長かったり特性インピーダンスの増大が大きかったりすると、ペア伝送路を伝播する信号の反射損や挿入損が大きくなったり、特定の周波数で共振が発生しやすくなる。したがって、従来の配線基板おいては、ペア伝送路を伝播する信号が例えば10GHzを超えるような高周波となると、信号を正常に伝播させることが困難となる。   However, as described above, the characteristic impedance increases in the portion where the distance between the pair of strip-shaped wiring conductors 180a and 180b is widened. Therefore, if the length of this portion is long or the increase in the characteristic impedance is large, it propagates through the pair transmission line. The reflection loss and insertion loss of the signal to be increased, and resonance tends to occur at a specific frequency. Therefore, in the conventional wiring board, when the signal propagating through the pair transmission line becomes a high frequency exceeding, for example, 10 GHz, it becomes difficult to propagate the signal normally.

そこで本願出願人は、先に特願2010−173079において、ペア伝送路におけるスルーホール導体のピッチを外部接続パッドのピッチよりも狭いものとすることにより、スルーホール導体に接続される帯状配線導体の間隔がスルーホール導体のピッチに対応して広がる部分の長さを短くするとともに広がる間隔も小さくし、この部分での特性インピーダンスの増大を小さくした配線基板を提案した。この配線基板によると、ペア伝送路を伝播する信号が例えば10GHzを超えるような高周波であったとしても、信号の反射損や挿入損が小さいとともに共振が発生しにくく、信号を正常に伝播させることが可能となった。   Therefore, the applicant of the present application previously described in Japanese Patent Application No. 2010-173079, by making the pitch of the through-hole conductors in the pair transmission line narrower than the pitch of the external connection pads, A wiring board has been proposed in which the length of the portion where the gap is widened corresponding to the pitch of the through-hole conductor is shortened and the gap is widened, and the increase in characteristic impedance in this portion is reduced. According to this wiring board, even if the signal propagating through the pair transmission line is a high frequency exceeding 10 GHz, for example, the reflection loss and insertion loss of the signal are small and resonance is not easily generated, so that the signal is propagated normally. Became possible.

しかしながら、特願2010−173079で提案した配線基板においても、ペア伝送路を伝播する信号の周波数が35GHzを超える領域では信号の反射損や挿入損が増加して例えばペア伝送路に40GHzや50GHzの信号を伝播させると、信号を良好に伝播させることが困難であることが分かった。これは、ペア伝送路を伝播する信号の周波数が35GHzを超えると、ペア伝送路におけるビアホール導体やスルーホール導体のインダクタンス成分が増大し、そのため信号の反射損や挿入損が増化するためと考えられる。   However, even in the wiring board proposed in Japanese Patent Application No. 2010-173079, in the region where the frequency of the signal propagating through the pair transmission path exceeds 35 GHz, the reflection loss and insertion loss of the signal increase, for example, 40 GHz or 50 GHz in the pair transmission path. It has been found that when a signal is propagated, it is difficult to propagate the signal well. This is thought to be because if the frequency of the signal propagating through the pair transmission line exceeds 35 GHz, the inductance component of the via-hole conductor and the through-hole conductor in the pair transmission line increases, which increases the reflection loss and insertion loss of the signal. It is done.

特開2004−289094号公報JP 2004-289094 A

本発明の課題は、ペア伝送路を伝播する信号が例えば35GHzを超えるような高周波であったとしても、信号の反射損や挿入損が小さいとともに共振が発生しにくく、信号を正常に伝播させることが可能な配線基板を提供することにある。   The problem of the present invention is that even if the signal propagating through the pair transmission line is a high frequency exceeding 35 GHz, for example, the reflection loss and insertion loss of the signal are small and resonance is not easily generated, and the signal is propagated normally. An object of the present invention is to provide a wiring board capable of satisfying the requirements.

本発明の配線基板は、スルーホールを有する絶縁板の上下面にビアホールを有する複数の絶縁層が積層されて成る絶縁基板と、前記絶縁基板の上面側の前記絶縁層の上面を前記絶縁基板の中央部から外周部にかけて互いに隣接して延在し、前記外周部において互いの間隔が広がる帯状配線導体のペアと、該帯状配線導体のペアの前記外周部側の端部に対応して設けられた互いに隣接する前記スルーホール内に被着されており、前記帯状配線導体のペアと前記絶縁基板の上面側のビアホール内に被着されたビアホール導体のペアを介して電気的に接続されたスルーホール導体のペアと、前記絶縁基板の下面の前記スルーホール導体のペアに対応する位置に互いに隣接して被着されており、前記スルーホール導体のペアに前記絶縁基板の下面側のビアホール内に被着されたビアホール導体のペアを介して電気的に接続された外部接続パッドのペアと、前記絶縁板の上下面および前記帯状配線導体のペアと前記絶縁板との間および前記外部接続パッドのペアと前記絶縁板との間に配設されており、前記スルーホール導体のペアまたは前記ビアホール導体のペアを取り囲む長円形の開口部を有する接地または電源導体層とを具備して成る配線基板であって、前記スルーホール導体のペアのピッチが前記外部接続パッドのペアのピッチよりも狭いとともに、前記開口部の大きさが前記絶縁板の下面側より上面側で小さいことを特徴とするものである。   The wiring board of the present invention includes an insulating substrate in which a plurality of insulating layers having via holes are stacked on the upper and lower surfaces of an insulating plate having through holes, and the upper surface of the insulating layer on the upper surface side of the insulating substrate. A pair of strip-shaped wiring conductors extending adjacent to each other from the central portion to the outer peripheral portion and widening each other at the outer peripheral portion, and provided on the end portion on the outer peripheral portion side of the pair of strip-shaped wiring conductors. The through-holes that are deposited in the through-holes adjacent to each other and electrically connected via the pair of strip-shaped wiring conductors and the pair of via-hole conductors deposited in the via hole on the upper surface side of the insulating substrate. A pair of hole conductors and a position corresponding to the pair of through-hole conductors on the lower surface of the insulating substrate are attached adjacent to each other, and the pair of through-hole conductors on the lower surface side of the insulating substrate A pair of external connection pads electrically connected via a pair of via-hole conductors deposited in the hole, the upper and lower surfaces of the insulating plate, and between the pair of strip-shaped wiring conductors and the insulating plate and the external A grounding or power supply conductor layer having an oval opening disposed between the pair of connection pads and the insulating plate and surrounding the pair of through-hole conductors or the pair of via-hole conductors; A wiring board, wherein the pitch of the pair of through-hole conductors is narrower than the pitch of the pair of external connection pads, and the size of the opening is smaller on the upper surface side than the lower surface side of the insulating plate, To do.

本発明の配線基板によれば、前記スルーホール導体のペアのピッチが前記外部接続パッドのペアのピッチよりも狭いことから、これに接続される帯状配線導体の間隔がスルーホール導体のピッチに対応して広がる部分の長さが短くなるとともに広がる間隔も小さくなり、この部分での特性インピーダンスの増大を小さくできる。さらにビアホール導体のペアまたはスルーホール導体のペアを取り囲むように接地または電源導体層に設けられた長円形の開口部の大きさを絶縁板の下面側よりも上面側で小さいものとすることにより、外部接続パッドと絶縁板との間に存在する接地または電源導体層との間の静電容量を低減して外部接続パッドのペアにおける信号の反射を抑制するとともに、絶縁板の上面側ではビアホール導体のペアやスルーホール導体のペアと接地または電源導体層との間の静電容量を増加させることにより35GHzを超える周波数におけるビアホール導体のペアおよびスルーホール導体のペアのインダクタンスの増大を相殺することができる。したがって、ペア伝送路を伝播する信号が例えば35GHzを超えるような高周波であったとしても、信号の反射損や挿入損が小さいとともに共振が発生しにくく、信号を正常に伝播させることが可能な配線基板を提供することができる。   According to the wiring board of the present invention, since the pitch of the pair of through-hole conductors is narrower than the pitch of the pair of external connection pads, the interval between the strip-shaped wiring conductors connected thereto corresponds to the pitch of the through-hole conductors. As a result, the length of the expanded portion is shortened and the interval of the spread is also reduced, and the increase in characteristic impedance in this portion can be reduced. Furthermore, by making the size of the oval opening provided in the ground or power supply conductor layer so as to surround the pair of via-hole conductors or the pair of through-hole conductors on the upper surface side than the lower surface side of the insulating plate, The capacitance between the external connection pad and the insulating plate between the ground or power supply conductor layer is reduced to suppress signal reflection at the pair of external connection pads, and the via hole conductor on the upper surface side of the insulating plate. The increase in inductance between the pair of via-hole conductors and the pair of through-hole conductors and the through-hole conductor pair at frequencies above 35 GHz by increasing the capacitance between the pair of through-hole conductors and the ground or power conductor layer. it can. Therefore, even if the signal propagating through the pair transmission line is a high frequency exceeding 35 GHz, for example, the reflection loss and insertion loss of the signal are small, and the resonance is not easily generated, and the signal can be propagated normally. A substrate can be provided.

図1は、本発明の配線基板の実施形態の一例を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an example of an embodiment of a wiring board according to the present invention. 図2は、図1に示す配線基板のペア伝送路を構成する導体層ならびにビアホール導体およびスルーホール導体のみを部分的に抜き出して示した要部斜視図である。FIG. 2 is a perspective view of a main part of the conductor layer, the via-hole conductor, and the through-hole conductor constituting the pair transmission line of the wiring board shown in FIG. 図3(a),(b)は、図2に示すペア伝送路およびそれを取り囲む接地または電源導体層を示す要部平面図およびその断面図である。FIGS. 3A and 3B are a plan view and a cross-sectional view of the main part showing the pair transmission line shown in FIG. 2 and the ground or power supply conductor layer surrounding the pair transmission line. 図4は、従来の配線基板を示す概略断面図である。FIG. 4 is a schematic cross-sectional view showing a conventional wiring board. 図5は、図4に示す配線基板のペア伝送路を構成する導体層ならびにビアホール導体およびスルーホール導体のみを部分的に抜き出して示した要部斜視図である。FIG. 5 is a perspective view of a main part in which only a conductor layer, a via-hole conductor, and a through-hole conductor constituting the pair transmission path of the wiring board shown in FIG. 4 are partially extracted. 図6(a),(b)は、図6に示すペア伝送路およびそれを取り囲む接地または電源導体層を示す要部平面図およびその断面図である。6 (a) and 6 (b) are a plan view and a cross-sectional view of a main part showing the pair transmission line shown in FIG. 6 and a ground or power supply conductor layer surrounding the pair transmission line.

次に、本発明の配線基板における実施形態の一例を説明する。本例の配線基板は、図1に示すように、スルーホール23を有する絶縁板13の上下面にビアホール21,22,24,25を有する複数の絶縁層11、12,14,15が積層されて成る絶縁基板10の表面および内部に配線導体用の複数の導体層31,32,33,34,35,36が配置されているとともにスルーホール23内に被着されたスルーホール導体43およびビアホール21,22,24,25内に被着されたビアホール導体41,42,44,45により上下の配線導体同士が接続された多層配線構造をしている。絶縁基板10の上面中央部には半導体素子Sの電極が半田バンプB1を介して電気的に接続される複数の半導体素子接続パッド50が形成されており、絶縁基板10の下面には外部電気回路基板の配線導体に半田ボールB2を介して電気的に接続される外部接続パッド60が形成されている。これらの半導体素子接続パッド50と外部接続パッド60とは、所定のもの同士が導体層31,32,33,34,35,36およびスルーホール導体23およびビアホール導体21,22,24,25により互いに電気的に接続されている。さらに、最上層の絶縁層11および導体層31の表面には半導体素子接続パッド50の中央部を露出させる開口部を有するソルダーレジスト層71が被着されており、最下層の絶縁層15および導体層36の表面には外部接続パッド60の中央部を露出させる開口部を有するソルダーレジスト層72が被着されている。   Next, an example of an embodiment of the wiring board of the present invention will be described. In the wiring board of this example, as shown in FIG. 1, a plurality of insulating layers 11, 12, 14, 15 having via holes 21, 22, 24, 25 are stacked on the upper and lower surfaces of the insulating plate 13 having through holes 23. A plurality of conductor layers 31, 32, 33, 34, 35, 36 for wiring conductors are arranged on the surface and inside of the insulating substrate 10, and the through-hole conductor 43 and the via hole deposited in the through-hole 23. A multilayer wiring structure in which upper and lower wiring conductors are connected to each other by via-hole conductors 41, 42, 44, and 45 deposited in 21, 22, 24, and 25, respectively. A plurality of semiconductor element connection pads 50 to which the electrodes of the semiconductor element S are electrically connected via the solder bumps B1 are formed at the center of the upper surface of the insulating substrate 10, and an external electric circuit is formed on the lower surface of the insulating substrate 10. External connection pads 60 are formed which are electrically connected to the wiring conductors of the substrate via solder balls B2. These semiconductor element connection pads 50 and external connection pads 60 are connected to each other by conductor layers 31, 32, 33, 34, 35, 36 and through-hole conductors 23 and via-hole conductors 21, 22, 24, 25. Electrically connected. Furthermore, a solder resist layer 71 having an opening exposing the central portion of the semiconductor element connection pad 50 is deposited on the surfaces of the uppermost insulating layer 11 and the conductor layer 31, and the lowermost insulating layer 15 and the conductor are exposed. A solder resist layer 72 having an opening that exposes the central portion of the external connection pad 60 is deposited on the surface of the layer 36.

絶縁板13は、配線基板のコア基板となる部材であり、例えばガラス繊維束を縦横に織り込んだガラス織物にエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させて成り、厚みが0.3〜1.5mm程度であり、その上面から下面にかけて直径が0.1〜0.3mm程度の複数のスルーホール23を有している。そして、その上下面には導体層33,34が被着されており、スルーホール23の内面にはスルーホール導体43が被着されている。なお、スルーホール導体43が被着されたスルーホール23内は樹脂により充填されている。   The insulating plate 13 is a member that becomes a core substrate of a wiring board, and is formed by impregnating a glass fabric in which glass fiber bundles are woven vertically and horizontally with a thermosetting resin such as epoxy resin or bismaleimide triazine resin, and has a thickness of 0. It has a plurality of through holes 23 with a diameter of about 0.1 to 0.3 mm from the upper surface to the lower surface. Conductive layers 33 and 34 are deposited on the upper and lower surfaces, and a through-hole conductor 43 is deposited on the inner surface of the through-hole 23. The through hole 23 to which the through hole conductor 43 is attached is filled with resin.

このような絶縁板13は、ガラス織物に未硬化の熱硬化性樹脂を含浸させた絶縁シートを熱硬化させた後、これに上面から下面にかけてスルーホール23をドリル加工することにより製作される。なお、絶縁板13上下面の導体層33,34は、絶縁板13用の絶縁シートの上下全面に厚みが3〜50μm程度の銅箔を貼着しておくとともに、この銅箔をシートの硬化後にエッチング加工することにより所定のパターンに形成される。また、スルーホール23内面のスルーホール導体43は、スルーホール23内面に無電解めっき法および電解めっき法により厚みが3〜50μm程度の銅めっき膜を析出させることにより形成される。なお、スルーホール23内を樹脂により充填するには、スルーホール導体43が形成されたスルーホール23内に未硬化のペースト状の熱硬化性樹脂をスクリーン印刷法により充填し、その後、充填された樹脂を熱硬化させる方法が採用される。   Such an insulating plate 13 is manufactured by thermally curing an insulating sheet in which a glass fabric is impregnated with an uncured thermosetting resin, and then drilling through holes 23 from the upper surface to the lower surface. The conductor layers 33 and 34 on the upper and lower surfaces of the insulating plate 13 have a copper foil having a thickness of about 3 to 50 μm adhered to the entire upper and lower surfaces of the insulating sheet for the insulating plate 13, and the copper foil is cured on the sheet. A predetermined pattern is formed by etching later. The through hole conductor 43 on the inner surface of the through hole 23 is formed by depositing a copper plating film having a thickness of about 3 to 50 μm on the inner surface of the through hole 23 by an electroless plating method and an electrolytic plating method. In addition, in order to fill the inside of the through hole 23 with a resin, an uncured pasty thermosetting resin was filled into the through hole 23 in which the through hole conductor 43 was formed by a screen printing method, and then filled. A method of thermally curing the resin is employed.

絶縁板13の上下面に積層された各絶縁層11,12,14,15は、ビルドアップ絶縁層であり、エポキシ樹脂等の熱硬化性樹脂に酸化珪素粉末等の無機絶縁物フィラーを30〜70質量%程度分散させた絶縁材料から成る。絶縁層11,12,14,15は、それぞれの厚みが20〜60μm程度であり、各層の上面から下面にかけて直径が30〜100μm程度の複数のビアホール21,22,24,25を有している。ビアホール21,22,24,25内には、ビアホール導体41,42,44,45がそれぞれ充填されており、これらのビアホール導体41,42,44,45を介して導体層31,32,33,34,35,36の所定の配線パターン同士を電気的に接続することにより高密度配線が立体的に形成可能となっている。このような各絶縁層11,12,14,15は、厚みが20〜60μm程度の未硬化の熱硬化性樹脂から成る絶縁フィルムを絶縁板13の上下面に貼着し、これを熱硬化させるとともにレーザ加工によりビアホール22,24を穿孔し、さらにその上に同様にして次の絶縁層11,15を順次積み重ねることによって形成される。なお、各絶縁層11,12,14,15の表面に被着された導体層31,32,35,36およびビアホール21,22,24,25内に充填されたビアホール導体41,42,44,45は、各絶縁層11,12,14,15を形成する毎に各絶縁層11,12,14,15の表面およびビアホール21,22,24,25内に5〜50μm程度の厚みの銅めっき膜を公知のセミアディティブ法等のパターン形成法により所定のパターンに被着させることによって形成される。   The insulating layers 11, 12, 14, and 15 laminated on the upper and lower surfaces of the insulating plate 13 are build-up insulating layers, and an inorganic insulating filler such as silicon oxide powder is added to a thermosetting resin such as an epoxy resin to 30 to 30. It is made of an insulating material dispersed by about 70% by mass. The insulating layers 11, 12, 14, and 15 each have a thickness of about 20 to 60 μm, and have a plurality of via holes 21, 22, 24, and 25 having a diameter of about 30 to 100 μm from the upper surface to the lower surface of each layer. . The via holes 21, 22, 24, 25 are filled with via hole conductors 41, 42, 44, 45, respectively. Via these via hole conductors 41, 42, 44, 45, the conductor layers 31, 32, 33, 45 are filled. High density wiring can be formed in three dimensions by electrically connecting predetermined wiring patterns 34, 35, 36. Each of the insulating layers 11, 12, 14, and 15 has an insulating film made of an uncured thermosetting resin having a thickness of about 20 to 60 μm attached to the upper and lower surfaces of the insulating plate 13 and thermally cured. At the same time, via holes 22 and 24 are drilled by laser processing, and the next insulating layers 11 and 15 are sequentially stacked thereon in the same manner. The conductor layers 31, 32, 35, 36 deposited on the surfaces of the insulating layers 11, 12, 14, 15 and the via hole conductors 41, 42, 44, filled in the via holes 21, 22, 24, 25 are provided. 45 is a copper plating having a thickness of about 5 to 50 μm on the surface of each insulating layer 11, 12, 14, 15 and in the via holes 21, 22, 24, 25 every time each insulating layer 11, 12, 14, 15 is formed. The film is formed by depositing a film in a predetermined pattern by a pattern forming method such as a known semi-additive method.

また、ソルダーレジスト層71,72は、例えばアクリル変性エポキシ樹脂等の熱硬化性樹脂にシリカやタルク等のフィラーを含有させて成り、上面側のソルダーレジスト層71であれば、半導体素子接続パッド50の中央部を露出させる開口部を有しているとともに、下面側のソルダーレジスト層72であれば、外部接続パッド60の中央部を露出させる開口部を有している。このようなソルダーレジスト層71,72は、その厚みが10〜50μm程度であり、感光性を有するソルダーレジスト層71,72用の未硬化樹脂ペーストをロールコーター法やスクリーン印刷法を採用して絶縁層11,15の上に塗布し、これを乾燥させた後、露光および現像処理を行なって半導体素子接続パッド50や外部接続パッド60の中央部を露出させる開口部を形成した後、これを熱硬化させることによって形成される。   Further, the solder resist layers 71 and 72 are formed by adding a filler such as silica or talc to a thermosetting resin such as an acrylic-modified epoxy resin. If the solder resist layer 71 is on the upper surface side, the semiconductor element connection pad 50 is used. In addition, the solder resist layer 72 on the lower surface side has an opening that exposes the central portion of the external connection pad 60. The solder resist layers 71 and 72 have a thickness of about 10 to 50 μm, and the uncured resin paste for the solder resist layers 71 and 72 having photosensitivity is insulated by adopting a roll coater method or a screen printing method. After coating on the layers 11 and 15 and drying them, exposure and development are performed to form openings that expose the central portions of the semiconductor element connection pads 50 and the external connection pads 60, and then this is heated. It is formed by curing.

ここで、図1に示した本例の配線基板におけるペア伝送路の例を図2に示す。図2は、導体層31,32,33,34,35,36およびスルーホール導体43およびビアホール導体41,42,44,45の一部のみを抜き出したものを示した要部斜視図である。なお、ペア伝送路は通常、その周囲を接地または電源導体層により所定間隔で取り囲まれているが、この図2では、ペア伝送路を構成する信号配線のみを示しており、その周囲の接地または電源導体層は省略している。   Here, FIG. 2 shows an example of a pair transmission path in the wiring board of this example shown in FIG. FIG. 2 is a perspective view of a main part showing only the conductor layers 31, 32, 33, 34, 35, 36, and the through-hole conductor 43 and the via-hole conductors 41, 42, 44, 45 extracted. The pair transmission line is usually surrounded by a ground or power supply conductor layer at a predetermined interval. However, in FIG. 2, only the signal wiring constituting the pair transmission line is shown. The power supply conductor layer is omitted.

本例のペア伝送路は、絶縁基板10の上面中央部に互いに隣接して配置された半導体素子接続パッドのペア50a,50bと、絶縁基板10の下面外周部に互いに隣接して配置された外部接続パッドのペア60a,60bとを有している。そしてこれらの半導体素子接続パッドのペア50a,50bと外部接続パッドのペア60a,60bとの間が、帯状配線導体のペア80a,80b、ビアホール導体のペア41a,41b、42a,42b、44a,44b、45a,45b、スルーホール導体のペア43a,43b、接続ランドのペア91a,91b、92a,92bを介して互いに電気的に接続されている。なお、本例のペア伝送路においては、外部接続パッドのペア60a,60bのピッチよりもスルーホール導体のペア43a,43bのピッチが狭いものとなっており、そのことが重要である。   The pair transmission line of this example includes a pair of semiconductor element connection pads 50a and 50b disposed adjacent to each other in the center of the upper surface of the insulating substrate 10 and an external disposed adjacent to the outer peripheral portion of the lower surface of the insulating substrate 10. It has a pair of connection pads 60a and 60b. Between the semiconductor element connection pad pair 50a and 50b and the external connection pad pair 60a and 60b, a strip-like wiring conductor pair 80a and 80b, a via-hole conductor pair 41a, 41b, 42a, 42b, 44a and 44b. , 45a, 45b, through-hole conductor pairs 43a, 43b, and connection land pairs 91a, 91b, 92a, 92b. In the pair transmission line of this example, the pitch of the through-hole conductor pairs 43a and 43b is narrower than the pitch of the external connection pad pairs 60a and 60b, which is important.

半導体素子接続パッドのペア50a,50bは、その直径が100〜200μm程度の概ね円形であり、互いに110〜250μm程度のピッチで隣接している。そしてこの半導体素子接続パッドのペア50a,50bからは細い帯状配線導体のペア80a,80bが絶縁基板10の外周部に向けて所定の間隔で延びている。帯状配線導体80a,80bは、その厚みが10〜20μm、幅が20〜30μm、互いの間隔が30〜75μm程度であり、その特性インピーダンスが概ね100Ωとなるように配置されている。そして帯状配線導体のペア80a,80bは、絶縁基板10の外周部において、その間隔がスルーホール導体のペア43a,43bに向けて250〜500μm程度となるように広がっている。この間隔が広がった部分では、帯状配線導体のペア80a,80bの特性インピーダンスは100Ωよりも大きくなる。しかしながら、広がる間隔が250〜500μmであり、あまり広くないことから、従来と比較して特性インピーダンスの増大はそれほど大きなものとはならない。また、広がる部分の長さもそれほど長いものとはならない。   The pair of semiconductor element connection pads 50a and 50b are substantially circular with a diameter of about 100 to 200 μm, and are adjacent to each other at a pitch of about 110 to 250 μm. From the semiconductor element connection pad pairs 50a and 50b, narrow strip-like wiring conductor pairs 80a and 80b extend toward the outer periphery of the insulating substrate 10 at a predetermined interval. The strip-like wiring conductors 80a and 80b have a thickness of 10 to 20 [mu] m, a width of 20 to 30 [mu] m, a distance of about 30 to 75 [mu] m, and are arranged so that their characteristic impedance is approximately 100 [Omega]. The strip-shaped wiring conductor pairs 80a and 80b are spread so that the distance between the pair of strip-shaped wiring conductors 80a and 80b is about 250 to 500 μm toward the through-hole conductor pairs 43a and 43b. In the portion where the interval is widened, the characteristic impedance of the pair of strip-shaped wiring conductors 80a and 80b becomes larger than 100Ω. However, since the spreading interval is 250 to 500 μm and is not so wide, the increase in characteristic impedance is not so large as compared with the conventional case. Also, the length of the spreading part is not so long.

帯状配線導体80a,80bの広がった端部の下面は、ビアホール導体のペア41a,41bおよび42a,42bを介してスルーホール導体のペア43a,43bに接続されている。スルーホール導体のペア43a,43bは、その直径が100〜150μm程度であり、互いの間隔が350〜600μm程度である。この直径と互いの間隔はスルーホール導体のペア43a,43bの特性インピーダンスが概ね100Ωとなるように設定されているが、直径は従来のものより小さく、間隔は従来のものよりも狭くなっている。なお、スルーホール導体のペア43a,43bが形成されるスルーホール23の直径のみを、その他のスルーホール23の直径よりも小さいものとすることが好ましい。   The lower surfaces of the extended end portions of the strip-shaped wiring conductors 80a and 80b are connected to the through-hole conductor pairs 43a and 43b via the via-hole conductor pairs 41a and 41b and 42a and 42b. The through-hole conductor pairs 43a and 43b have a diameter of about 100 to 150 [mu] m and an interval of about 350 to 600 [mu] m. The diameter and the distance between each other are set so that the characteristic impedance of the through-hole conductor pairs 43a and 43b is approximately 100Ω, but the diameter is smaller than the conventional one and the distance is smaller than the conventional one. . It is preferable that only the diameter of the through hole 23 in which the through-hole conductor pair 43a, 43b is formed is smaller than the diameter of the other through holes 23.

スルーホール導体のペア43a,43bの下端には、ビアホール導体のペア44a,44bが接続されており、このビアホール導体のペア44a,44bの下端には導体層35により形成された接続ランドのペア49a,49bが接続されている。接続ランドのペア49a,49bは、スルーホール導体のペア43a,43bの下方から外部接続パッド60a,60bへ向かう方向に互いの間隔が500〜1000μm程度となるように延びており、その外側端部がビアホール導体のペア45a,45bを介して外部接続パッドのペア60a,60bに接続されている。外部接続パッドのペア60a,60bのペアはその直径が300〜500μm程度の概ね円形であり、互いに500〜1000μmのピッチで隣接している。   Via hole conductor pairs 44a and 44b are connected to the lower ends of the through-hole conductor pairs 43a and 43b. A connection land pair 49a formed by the conductor layer 35 is connected to the lower ends of the via-hole conductor pairs 44a and 44b. 49b are connected. The connection land pairs 49a and 49b extend in the direction from the bottom of the through-hole conductor pairs 43a and 43b toward the external connection pads 60a and 60b so that the distance between them is about 500 to 1000 μm. Are connected to the pair of external connection pads 60a and 60b via the via-hole conductor pair 45a and 45b. The pair of external connection pads 60a and 60b are generally circular with a diameter of about 300 to 500 μm, and are adjacent to each other at a pitch of 500 to 1000 μm.

本発明においては、上述したように、外部接続パッドのペア60a,60bのピッチよりもスルーホール導体のペア43a,43bのピッチが狭いものとなっている。それにより、帯状配線導体のペア80a,80bが絶縁基板10の外周部でスルーホール導体のペア43a,43bに向けて広がる部分の長さが短くなるとともに広がる間隔も小さくなり、この部分での特性インピーダンスの増大も小さくできる。   In the present invention, as described above, the pitch of the through-hole conductor pairs 43a and 43b is narrower than the pitch of the external connection pad pairs 60a and 60b. As a result, the length of the portion where the pair of strip-like wiring conductors 80a and 80b spreads toward the through-hole conductor pair 43a and 43b on the outer peripheral portion of the insulating substrate 10 is shortened and the gap between the strips is reduced. The increase in impedance can also be reduced.

次に、図3(a),(b)に上述したペア伝送路およびそれを取り囲む接地または電源導体層を要部上面図および要部断面図で示す。図3に示すように、導体層31,32,33,34,35,36にはペア伝送路を取り囲むようにして接地または電源導体層91,92,93,94,95,96が配設されている。これらの接地または電源導体層91,92,93,94,95,96には、ペア伝送路におけるビアホール導体のペア41a,41b、42a,42b、44a,44b、45a,45b、スルーホール導体のペア43a,43bおよび外部接続パッドのペア60a,60bを取り囲む長円形の開口部91a,92a,93a,94a,95a,96aが形成されている。   Next, FIGS. 3A and 3B show the above-described pair transmission line and the ground or power supply conductor layer surrounding the pair transmission line in a top view and a cross-sectional view of the relevant part. As shown in FIG. 3, the conductor layers 31, 32, 33, 34, 35, and 36 are provided with ground or power supply conductor layers 91, 92, 93, 94, 95, and 96 so as to surround the pair transmission line. ing. These ground or power supply conductor layers 91, 92, 93, 94, 95, 96 include via hole conductor pairs 41a, 41b, 42a, 42b, 44a, 44b, 45a, 45b, and through hole conductor pairs in a pair transmission line. 43a, 43b and an oval opening 91a, 92a, 93a, 94a, 95a, 96a surrounding the pair of external connection pads 60a, 60b are formed.

そして本例の配線基板においては、これらの開口部91a,92a,93a,94a,95a,96aのうち、絶縁板13の上面側の開口部92a,93aが下面側の開口部94a,95aに比べて小さくなっている。具体的には、例えば下面側の開口部94a,95aは外部接続パッドのペア60a,60bをつないだ長円形の領域よりも100μm程度ずつ大きな長円形であり、上面側の開口部92a,93aはこれらが取り囲むビアホール導体のペア42a,42bまたはスルーホール導体のペア43a,43bをつないだ長円形の領域よりも50μm程度ずつ大きな長円形である。なお、ここでいうビアホール導体42a,42bやスルーホール導体43a,43bには、これらに接続されたランドを含むものとする。   In the wiring board of this example, among these openings 91a, 92a, 93a, 94a, 95a, 96a, the openings 92a, 93a on the upper surface side of the insulating plate 13 are compared with the openings 94a, 95a on the lower surface side. It is getting smaller. Specifically, for example, the openings 94a and 95a on the lower surface side are oval shapes that are about 100 μm larger than the oval region connecting the pair of external connection pads 60a and 60b, and the openings 92a and 93a on the upper surface side are These are oval shapes that are approximately 50 μm larger than the oval region connecting via hole conductor pairs 42a and 42b or through hole conductor pairs 43a and 43b that they surround. The via-hole conductors 42a and 42b and the through-hole conductors 43a and 43b mentioned here include lands connected thereto.

このように、外部接続パッド60a,60bと絶縁板13との間の接地または電源導体層94,95に、外部接続パッドのペア60a,60bをつないだ長円形の領域よりも100μm程度ずつ大きな長円形の開口部94a,95aを設けることにより、外部接続パッドのペア60a,60bと接地または電源導体層94,95との間の静電容量を低減して外部接続パッドのペア60a,60bにおける信号の反射を抑制することができる。また、絶縁板13の上面側の開口部92a,93aを小さいものとすることにより、絶縁板13の上面側におけるビアホール導体のペア42a,42bおよびスルーホール導体のペア43a,43bと接地または電源導体層92,93との間の間隔が狭まるので両者間の静電容量が増加する。この部分の静電容量が増加することにより、ペア伝送路を伝播する信号が35GHzを超える周波数の場合に増大するビアホール導体のペア42a,42bおよびスルーホール導体のペア43a,43bのインダクタンスの増大を相殺することができる。したがって、ペア伝送路を伝播する信号が例えば35GHzを超えるような高周波であったとしても、信号の反射損や挿入損が小さいとともに共振が発生しにくく、信号を正常に伝播させることが可能な配線基板を提供することができる。   In this way, the length between the external connection pads 60a and 60b and the insulating plate 13 is about 100 μm larger than the oval region where the external connection pad pairs 60a and 60b are connected to the ground or power supply conductor layers 94 and 95. By providing the circular openings 94a and 95a, the capacitance between the external connection pad pair 60a and 60b and the ground or power supply conductor layer 94 and 95 is reduced, and the signal in the external connection pad pair 60a and 60b is reduced. Reflection can be suppressed. Further, by making the openings 92a and 93a on the upper surface side of the insulating plate 13 small, the via hole conductor pair 42a and 42b and the through hole conductor pair 43a and 43b on the upper surface side of the insulating plate 13 and the ground or power supply conductor. Since the distance between the layers 92 and 93 is narrowed, the capacitance between them increases. By increasing the capacitance of this portion, the inductance of the via-hole conductor pair 42a and 42b and the through-hole conductor pair 43a and 43b that increases when the signal propagating through the pair transmission line exceeds 35 GHz is increased. Can be offset. Therefore, even if the signal propagating through the pair transmission line is a high frequency exceeding 35 GHz, for example, the reflection loss and insertion loss of the signal are small, and the resonance is not easily generated, and the signal can be propagated normally. A substrate can be provided.

10・・・絶縁基板
11,12,14,15・・・絶縁層
13・・・絶縁板
21,22,24,25・・・ビアホール
23・・・スルーホール
41a,41b、42a,42b、44a,44b、45a,45b・・・ビアホール導体のペア
43a,43b・・・スルーホール導体のペア
60a,60b・・・外部接続パッドのペア
80a,80b・・・帯状配線導体のペア
91,92,93,94,95,96・・・接地または電源導体層
91a,92a,93a,94a,95a,96a・・・開口部
DESCRIPTION OF SYMBOLS 10 ... Insulating substrate 11, 12, 14, 15 ... Insulating layer 13 ... Insulating plate 21, 22, 24, 25 ... Via hole 23 ... Through hole 41a, 41b, 42a, 42b, 44a , 44b, 45a, 45b ... pair of via-hole conductors 43a, 43b ... pair of through-hole conductors 60a, 60b ... pair of external connection pads 80a, 80b ... pair of strip-like wiring conductors 91, 92, 93, 94, 95, 96 ... ground or power supply conductor layer 91a, 92a, 93a, 94a, 95a, 96a ... opening

Claims (1)

スルーホールを有する絶縁板の上下面にビアホールを有する複数の絶縁層が積層されて成る絶縁基板と、前記絶縁基板の上面側の前記絶縁層の上面を前記絶縁基板の中央部から外周部にかけて互いに隣接して延在し、前記外周部において互いの間隔が広がる帯状配線導体のペアと、該帯状配線導体のペアの前記外周部側の端部に対応して設けられた互いに隣接する前記スルーホール内に被着されており、前記帯状配線導体のペアと前記絶縁基板の上面側のビアホール内に被着されたビアホール導体のペアを介して電気的に接続されたスルーホール導体のペアと、前記絶縁基板の下面の前記スルーホール導体のペアに対応する位置に互いに隣接して被着されており、前記スルーホール導体のペアに前記絶縁基板の下面側のビアホール内に被着されたビアホール導体のペアを介して電気的に接続された外部接続パッドのペアと、前記絶縁板の上下面および前記帯状配線導体のペアと前記絶縁板との間および前記外部接続パッドのペアと前記絶縁板との間に配設されており、前記スルーホール導体のペアまたは前記ビアホール導体のペアを取り囲む長円形の開口部を有する接地また電源導体層とを具備して成る配線基板であって、前記スルーホール導体のペアのピッチが前記外部接続パッドのペアのピッチよりも狭いとともに、前記開口部の大きさが前記絶縁板の下面側より上面側で小さいことを特徴とする配線基板。   An insulating substrate formed by laminating a plurality of insulating layers having via holes on the upper and lower surfaces of an insulating plate having a through hole, and the upper surface of the insulating layer on the upper surface side of the insulating substrate from the central portion to the outer peripheral portion of the insulating substrate. A pair of strip-shaped wiring conductors extending adjacently and having a gap between each other in the outer peripheral portion, and the through-holes adjacent to each other provided corresponding to the end portion on the outer peripheral portion side of the pair of strip-shaped wiring conductors A pair of through-hole conductors electrically connected via a pair of strip-shaped wiring conductors and a pair of via-hole conductors deposited in a via hole on the upper surface side of the insulating substrate; Adjacent to each other at positions corresponding to the pair of through-hole conductors on the lower surface of the insulating substrate, and deposited in via holes on the lower surface side of the insulating substrate to the pair of through-hole conductors A pair of external connection pads electrically connected via a pair of via-hole conductors, an upper and lower surfaces of the insulating plate, a pair of the strip-like wiring conductors and the insulating plate, and a pair of the external connection pads and the A wiring board comprising a ground or power supply conductor layer having an oval opening surrounding the pair of through-hole conductors or the pair of via-hole conductors. The wiring board according to claim 1, wherein a pitch of the pair of through-hole conductors is narrower than a pitch of the pair of external connection pads, and the size of the opening is smaller on the upper surface side than the lower surface side of the insulating plate.
JP2010244852A 2010-10-30 2010-10-30 Wiring board Active JP5565958B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010244852A JP5565958B2 (en) 2010-10-30 2010-10-30 Wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010244852A JP5565958B2 (en) 2010-10-30 2010-10-30 Wiring board

Publications (2)

Publication Number Publication Date
JP2012099587A true JP2012099587A (en) 2012-05-24
JP5565958B2 JP5565958B2 (en) 2014-08-06

Family

ID=46391189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010244852A Active JP5565958B2 (en) 2010-10-30 2010-10-30 Wiring board

Country Status (1)

Country Link
JP (1) JP5565958B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007210A (en) * 2012-06-22 2014-01-16 Kyocer Slc Technologies Corp Wiring board
JP2015106599A (en) * 2013-11-29 2015-06-08 京セラサーキットソリューションズ株式会社 Wiring board
JP2017120932A (en) * 2017-04-03 2017-07-06 株式会社フジクラ Printed Wiring Board
US10129978B2 (en) 2014-09-22 2018-11-13 Fujikura Ltd. Printed wiring board
WO2023100853A1 (en) * 2021-11-30 2023-06-08 京セラ株式会社 Wiring substrate, electronic device, and electronic module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186465A (en) * 1995-12-28 1997-07-15 Nec Corp Printed circuit board, design method thereof and wiring pattern forming apparatus therefor
JP2003273525A (en) * 2002-03-15 2003-09-26 Kyocera Corp Wiring board
JP2006216712A (en) * 2005-02-02 2006-08-17 Ibiden Co Ltd Multilayer printed wiring board
JP2010087037A (en) * 2008-09-29 2010-04-15 Kyocera Corp Multilayer wiring board for differential transmission

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186465A (en) * 1995-12-28 1997-07-15 Nec Corp Printed circuit board, design method thereof and wiring pattern forming apparatus therefor
JP2003273525A (en) * 2002-03-15 2003-09-26 Kyocera Corp Wiring board
JP2006216712A (en) * 2005-02-02 2006-08-17 Ibiden Co Ltd Multilayer printed wiring board
JP2010087037A (en) * 2008-09-29 2010-04-15 Kyocera Corp Multilayer wiring board for differential transmission

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007210A (en) * 2012-06-22 2014-01-16 Kyocer Slc Technologies Corp Wiring board
JP2015106599A (en) * 2013-11-29 2015-06-08 京セラサーキットソリューションズ株式会社 Wiring board
US10129978B2 (en) 2014-09-22 2018-11-13 Fujikura Ltd. Printed wiring board
JP2017120932A (en) * 2017-04-03 2017-07-06 株式会社フジクラ Printed Wiring Board
WO2023100853A1 (en) * 2021-11-30 2023-06-08 京セラ株式会社 Wiring substrate, electronic device, and electronic module

Also Published As

Publication number Publication date
JP5565958B2 (en) 2014-08-06

Similar Documents

Publication Publication Date Title
JP6478309B2 (en) Multilayer substrate and method for manufacturing multilayer substrate
US9288893B2 (en) Implementations of twisted differential pairs on a circuit board
KR101522786B1 (en) Multilayered substrate and method of manufacturing the same
JP5586441B2 (en) Wiring board
JP5352019B1 (en) Multilayer circuit board and high frequency circuit module
JP5565958B2 (en) Wiring board
JP5311653B2 (en) Wiring board
TWI538584B (en) Embedded high density interconnection printed circuit board and method for manufactruing same
JP5311669B2 (en) Wiring board
JP5473074B2 (en) Wiring board
JP2005353835A (en) Wiring board
JP6205721B2 (en) Multilayer circuit board and electronic device
JP2010109243A (en) Wiring board
JP2012033529A (en) Wiring board
JP2012033786A (en) Wiring board
JP5565949B2 (en) Wiring board
JP5370883B2 (en) Wiring board
JP4508540B2 (en) Wiring board and electronic device
KR100573494B1 (en) Method of embedding a coaxial line in printed circuit board
JP5835732B2 (en) Wiring board
JP2009290044A (en) Wiring substrate
JP2011138846A (en) Wiring board
JP5992825B2 (en) Wiring board
JP5595153B2 (en) Crosstalk suppression circuit board
JP5890978B2 (en) Wiring board manufacturing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130604

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140123

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140128

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140318

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140530

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140616

R150 Certificate of patent or registration of utility model

Ref document number: 5565958

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350