JP5473074B2 - Wiring board - Google Patents

Wiring board Download PDF

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JP5473074B2
JP5473074B2 JP2010243601A JP2010243601A JP5473074B2 JP 5473074 B2 JP5473074 B2 JP 5473074B2 JP 2010243601 A JP2010243601 A JP 2010243601A JP 2010243601 A JP2010243601 A JP 2010243601A JP 5473074 B2 JP5473074 B2 JP 5473074B2
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wiring
opening
differential signal
interval
wiring board
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JP2012099536A (en
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義信 澤
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京セラSlcテクノロジー株式会社
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Description

本発明は、半導体素子を搭載するための配線基板に関するものである。   The present invention relates to a wiring board for mounting a semiconductor element.

一般に、現在の電子機器は、移動体通信機器に代表されるように、小型・薄型・軽量・高性能・高機能・高品質・高信頼性が要求されてきており、このような電子機器に搭載される半導体装置も小型・高密度化が要求されるようになってきている。そのため、半導体装置を構成する配線基板にも小型化・薄型化・多端子化が求められてきており、それを実現するために信号配線等の配線の幅を細くするとともにその間隔を狭くし、さらに配線の多層化により高密度配線化が図られている。   In general, current electronic devices are required to be small, thin, lightweight, high performance, high functionality, high quality, and high reliability, as represented by mobile communication devices. Semiconductor devices to be mounted are also required to be small and high in density. Therefore, miniaturization / thinning / multi-terminals are also required for the wiring board constituting the semiconductor device, and in order to realize it, the width of the wiring such as the signal wiring is narrowed and the interval is narrowed, Furthermore, high-density wiring has been achieved by multilayering of wiring.

このような高密度配線が可能な配線基板として、ビルドアップ法を採用して製作された多層配線基板が知られている。ビルドアップ法とは、例えば、ガラスクロスやアラミド不布織等の補強材に耐熱性や耐薬品性を有するエポキシ樹脂に代表される熱硬化性樹脂を含浸させて複合化した絶縁基板上に、間に配線導体を挟んでエポキシ樹脂等の熱硬化性樹脂から成る接着材を塗布して絶縁層を形成するとともに絶縁層を加熱硬化させた後、配線導体上部の絶縁層にレーザで径が50〜200μm程度のビアホールを形成し、しかる後、絶縁層表面を化学粗化し、さらに無電解銅めっき法および電解銅めっき法を用いてビアホール側面およびビアホール底面の配線導体上に導体膜を被着してビアホール導体を形成するとともに絶縁層表面にビアホール導体と接続する配線導体を形成し、さらに、絶縁層やビアホール導体・配線導体の形成を複数回繰り返すことにより配線基板を製作する方法である。   As a wiring board capable of such high-density wiring, a multilayer wiring board manufactured by adopting a build-up method is known. The build-up method is, for example, on an insulating substrate that is compounded by impregnating a reinforcing material such as glass cloth or aramid non-woven fabric with a thermosetting resin typified by an epoxy resin having heat resistance and chemical resistance. An insulating layer is formed by applying an adhesive made of a thermosetting resin such as an epoxy resin with a wiring conductor interposed therebetween, and the insulating layer is heated and cured. After forming a via hole of about 200 μm, the surface of the insulating layer is chemically roughened, and a conductive film is deposited on the wiring conductor on the side surface of the via hole and the bottom surface of the via hole by using an electroless copper plating method and an electrolytic copper plating method. Forming a via-hole conductor and forming a wiring conductor connected to the via-hole conductor on the surface of the insulating layer, and then repeating the formation of the insulating layer and via-hole conductor / wiring conductor multiple times. It is a method of fabricating a wiring board.

このような配線基板の配線導体は、用途によって、電源導体層・接地導体層および信号配線に機能化されている。このうち電源導体層は、配線基板に実装される半導体素子に電源を供給するために機能し、絶縁層の略全面をめっきしたベタパターンの薄膜導体から構成されている。また、信号配線は、電気信号を電磁波障害なしに伝播させるために機能し、所定の回路形状にパターン化した導体から構成されている。さらに、接地導体層は、電源導体層や信号配線を流れる電流によって発生する電磁波をシールドし、他の配線導体に生じるノイズを防止するために機能し、電源導体層と同様に絶縁層の略全面をめっきしたベタパターンの薄膜導体から構成されている。すなわち、信号配線などから発生する電磁波を、接地導体層で渦電流に変換することによってシールドし、かかるシールド効果によって他の信号配線でノイズが発生しないように構成されている。   The wiring conductor of such a wiring board is functionalized into a power supply conductor layer / ground conductor layer and a signal wiring depending on applications. Among these, the power supply conductor layer functions to supply power to the semiconductor element mounted on the wiring board, and is composed of a solid pattern thin film conductor in which substantially the entire surface of the insulating layer is plated. Further, the signal wiring functions to propagate an electric signal without electromagnetic interference, and is composed of a conductor patterned in a predetermined circuit shape. Furthermore, the ground conductor layer functions to shield electromagnetic waves generated by the current flowing through the power supply conductor layer and the signal wiring, and to prevent noise generated in other wiring conductors. It is comprised from the thin-film conductor of the solid pattern plated. That is, the electromagnetic wave generated from the signal wiring or the like is shielded by converting it into an eddy current in the ground conductor layer, and noise is not generated in the other signal wiring due to the shielding effect.

このような役割を担う電源導体層・信号配線および接地導体層は、それぞれ配線基板の表面に設けられた外部電気回路接続用の実装用電極にビアホール導体を介して電気的に接続され、配線基板に搭載される半導体素子への電力の供給・信号の伝達あるいは電磁波のシールドを行うことができるような積層構造に配置されている。   The power supply conductor layer / signal wiring and grounding conductor layer that play such a role are electrically connected to the mounting electrodes for connecting external electric circuits provided on the surface of the wiring board through via-hole conductors, respectively. It is arranged in a laminated structure that can supply power to a semiconductor element mounted on the substrate, transmit signals, or shield electromagnetic waves.

また、電源導体層および接地導体層のベタパターンには、絶縁層の樹脂が硬化する際に発生するガスを逃すために格子状に配列された方形の開口部が設けられている。このような格子状に配列された開口部は、配線基板を平面視した時に、電源導体層および接地導体層の全面にわたって均一に配列されているとともに信号配線と平行に配列されている。   In addition, the solid patterns of the power supply conductor layer and the ground conductor layer are provided with rectangular openings arranged in a lattice pattern so as to escape gas generated when the resin of the insulating layer is cured. The openings arranged in a lattice pattern are arranged uniformly over the entire surface of the power supply conductor layer and the ground conductor layer when the wiring board is viewed in plan, and are arranged in parallel with the signal wiring.

しかしながら、このような従来の配線基板では、これを平面視した時に、格子状に配列された開口部と信号配線とが平行に配列されているので、信号配線によっては、絶縁層を介して対向配置された開口部と重なって形成されたり、あるいは開口部と重ならずに形成されたりして、各信号配線間で特性インピーダンスが異なってしまい、高周波領域で特性インピーダンスの不整合による反射ノイズが発生し搭載する半導体素子が誤作動してしまうという問題点を有していた。また、開口部が大きすぎるとベタパターンによるシールド効果が小さくなり、信号の漏れによるクロストークノイズが発生してしまい、逆に開口部が小さすぎると絶縁層の樹脂が硬化する際に発生するガスが容易に抜けず、接地または電源導体層が膨れたり剥れたりしてしまうという問題点を有していた。   However, in such a conventional wiring board, when viewed in plan, the openings arranged in a lattice pattern and the signal wiring are arranged in parallel, so that depending on the signal wiring, they face each other through an insulating layer. The characteristic impedance differs between each signal wiring because it is formed so as to overlap with the arranged opening or not overlapping with the opening, and reflection noise due to mismatch of characteristic impedance in the high frequency region There is a problem in that the generated semiconductor device malfunctions. Also, if the opening is too large, the shielding effect due to the solid pattern will be reduced, causing crosstalk noise due to signal leakage, and conversely if the opening is too small, the gas generated when the resin of the insulating layer is cured. Has a problem that the grounding or power supply conductor layer swells or peels off.

そこで、信号配線を一方向に延びる配線導体および一方向に対して45度の角度で延びる配線導体により形成するとともに、開口部の一辺が0.10〜0.15mmである開口部を一方向に対して15〜30度の方向に開口部間の間隔が0.3〜0.6mmとなるように配列した配線基板が提案されている。この配線基板によれば、一方向に延びる配線導体および一方向に対して45度の方向に延びる配線導体で形成された信号配線に対して接地または電源導体層に形成した開口部を15〜30度の方向に配列したことから、配線基板を平面視した時、信号配線と開口部とが平均的に重ね合わさり各信号配線間で特性インピーダンスの差が生じることはなく、その結果、反射ノイズの発生が抑制され、高周波信号領域でも安定して信号が伝達される配線基板とすることができる。また、この配線基板によれば、開口部の一辺を0.10〜0.15mmとするとともに開口部間の間隔を0.3〜0.6mmとしたことから、接地および電源導体層のシールド効果で高周波領域における信号配線間のクロストークノイズが低減できるとともに、絶縁層の樹脂が硬化する際に発生するガスを容易に逃がすことができ、その結果、接地または電源導体層に膨れや剥れのない配線基板とすることができる。   Therefore, the signal wiring is formed by a wiring conductor extending in one direction and a wiring conductor extending at an angle of 45 degrees with respect to one direction, and an opening having one side of the opening of 0.10 to 0.15 mm is formed in one direction. On the other hand, there has been proposed a wiring board arranged in a direction of 15 to 30 degrees so that an interval between openings is 0.3 to 0.6 mm. According to this wiring board, the opening formed in the ground or power supply conductor layer with respect to the signal wiring formed by the wiring conductor extending in one direction and the wiring conductor extending in the direction of 45 degrees with respect to one direction is formed in 15-30. When the wiring board is viewed in plan, the signal wiring and the opening are overlapped on average, so that there is no difference in characteristic impedance between each signal wiring. Generation of the wiring board can be suppressed, and the signal can be stably transmitted even in the high-frequency signal region. Further, according to this wiring board, since one side of the opening is set to 0.10 to 0.15 mm and the interval between the openings is set to 0.3 to 0.6 mm, the shielding effect of the ground and the power supply conductor layer is achieved. In addition to reducing crosstalk noise between signal wires in the high-frequency region, gas generated when the resin in the insulating layer hardens can be easily released, resulting in swelling or peeling of the ground or power conductor layer. There can be no wiring board.

ところで近時、半導体素子を搭載するための配線基板においては、高周波伝送における電気的ロスの少ない形態が要求されている。そこで、信号用の配線導体として差動信号配線を備えた配線基板が使用されている。差動信号配線は、絶縁基板の表面または内部に互いに所定間隔で並行に延びる2本の帯状配線導体をペアとして設けるとともに、このペアをなす2本の帯状配線導体の上下や左右に接地または電源用導体を所定の間隔で設けてインピーダンス整合させることにより形成されている。   Recently, a wiring board for mounting a semiconductor element is required to have a form with less electrical loss in high-frequency transmission. Therefore, a wiring board provided with differential signal wiring is used as a signal wiring conductor. The differential signal wiring is provided with a pair of two strip-shaped wiring conductors extending in parallel with each other at a predetermined interval on the surface or inside of the insulating substrate as a pair, and grounding or power supply above and below, and right and left of the two strip-shaped wiring conductors forming the pair. It is formed by providing impedance matching by providing conductors at predetermined intervals.

しかしながら、上述したように信号配線を一方向に延びる配線導体および一方向に対して45度の角度で延びる配線導体により形成するとともに、開口部の一辺が0.10〜0.15mmである開口部を一方向に対して15〜30度の方向に開口部間の間隔が0.3〜0.6mmとなるように配列した配線基板に差動信号配線を適用すると、差動信号配線を構成する2本の帯状配線導体のいずれか一方が接地または電源導体層に設けた開口部と対向する頻度が高くなる。したがって一組の差動信号配線としては、0.3〜0.6mmの間隔で開口部と対向する部分が現れる。このように一組の差動信号配線として、0.3〜0.6mmの間隔で開口部と対向する部分があると、その部分でインピーダンスの整合が良好にとれずに信号の反射損や挿入損が発生し、差動信号配線に信号を良好に伝播させることが困難となる。   However, as described above, the signal wiring is formed by the wiring conductor extending in one direction and the wiring conductor extending at an angle of 45 degrees with respect to the one direction, and the opening having one side of the opening of 0.10 to 0.15 mm When the differential signal wiring is applied to the wiring board arranged so that the distance between the openings is 0.3 to 0.6 mm in the direction of 15 to 30 degrees with respect to one direction, the differential signal wiring is configured. The frequency with which one of the two strip-shaped wiring conductors faces the opening provided in the ground or power supply conductor layer is increased. Therefore, as a set of differential signal wirings, portions facing the openings appear at intervals of 0.3 to 0.6 mm. In this way, if there is a portion facing the opening at intervals of 0.3 to 0.6 mm as a set of differential signal wiring, impedance matching is not satisfactorily achieved at that portion, and signal reflection loss or insertion Loss occurs and it becomes difficult to propagate the signal satisfactorily through the differential signal wiring.

なお、接地または電源導体層に設ける開口部を信号用の配線導体と対向しない位置に設けるようになした配線基板も提案されているが、多数の信号用の配線導体が開口部の大きさよりも狭い間隔で密集して設けられた領域を有している配線基板の場合には、その領域に開口部を設けることができずに接地または電源導体層に膨れや剥がれが発生してしまう。   There has also been proposed a wiring board in which an opening provided in the ground or power supply conductor layer is provided at a position not facing the signal wiring conductor. However, the number of signal wiring conductors is larger than the size of the opening. In the case of a wiring board having a region densely provided at a narrow interval, an opening cannot be provided in that region, and the ground or the power supply conductor layer is swollen or peeled off.

特許第4540262号公報Japanese Patent No. 4540262 特許第3801880号公報Japanese Patent No. 3801880

本発明の課題は、接地または電源導体層に膨れや剥がれが発生することがないとともに、差動信号配線を伝播する信号の反射損や挿入損が小さく、信号を正常に伝播させることが可能な配線基板を提供することにある。   The problem of the present invention is that the grounding or power supply conductor layer does not swell or peel off, and the reflection loss and insertion loss of the signal propagating through the differential signal wiring are small, so that the signal can be propagated normally. It is to provide a wiring board.

本発明の配線基板は、一辺の長さが0.10〜0.15mmである方形のガス抜き用の開口部が複数形成された接地または電源導体層と、該接地または電源導体層に絶縁層を介して対向配置され、前記絶縁層上を前記開口部の大きさよりも狭い間隔で並行に延びる2本の帯状配線導体から成る複数の差動信号配線とを具備し、複数の前記差動信号配線が前記開口部の大きさよりも広い間隔で互いに隣接する第1の領域と、複数の前記差動信号配線が前記開口部の幅よりも狭い間隔で互いに隣接する第2の領域とが形成されて成る配線基板であって、前記開口部は、前記第1の領域においては前記差動信号配線同士の間に対向する位置に該開口部同士の間隔が0.3〜0.6mmである第1の間隔で配置されているとともに前記第2の領域においては前記差動信号配線に沿った方向における前記開口部同士の間隔が前記第1の間隔よりも広い第2の間隔で配置されていることを特徴とするものである。   A wiring board of the present invention includes a ground or power supply conductor layer in which a plurality of rectangular gas vent openings each having a side length of 0.10 to 0.15 mm are formed, and an insulating layer on the ground or power supply conductor layer And a plurality of differential signal wirings composed of two strip-shaped wiring conductors extending in parallel on the insulating layer at an interval narrower than the size of the opening. A first region in which the wirings are adjacent to each other at an interval wider than the size of the opening, and a second region in which the plurality of differential signal wirings are adjacent to each other at an interval narrower than the width of the opening are formed. In the first area, the openings are located at positions facing each other between the differential signal wires in the first region, and the distance between the openings is 0.3 to 0.6 mm. 1 and spaced in the second region. The Te is characterized in that it is arranged in a wide second intervals than intervals of the first distance between the opening in the direction along the differential signal lines.

本発明の配線基板によると、接地または電源導体層に形成されたガス抜き用の開口部は、複数の差動信号配線が開口部の大きさよりも広い間隔で互いに隣接する第1の領域においては、差動信号配線同士の間に対向する位置に開口部同士の間隔が0.3〜0.6mmである第1の間隔で配置されていることから差動信号配線と開口部とが重なることがなく差動信号配線の特性インピーダンスが所定の値に整合される。また、複数の差動信号配線が開口部の大きさよりも狭い間隔で互いに隣接する第2の領域においては、差動信号配線に沿った方向における開口部同士の間隔が第1の間隔よりも広い第2の間隔で配置されていることから、一組の差動信号配線において開口部と重なり合う部分同士の間隔が広いものとなり、その部分の特性インピーダンスの不整合による影響を小さいものとすることができる。さらに複数の差動信号配線が開口部の大きさよりも狭い間隔で互いに隣接する第2の領域においても接地または電源導体層の開口部を介してガスが抜けるので、接地または電源導体層に膨れや剥がれが発生することを防止することができる。   According to the wiring board of the present invention, the opening for venting formed in the ground or power supply conductor layer has a plurality of differential signal wirings in the first region adjacent to each other at intervals wider than the size of the opening. In addition, the differential signal wiring and the opening overlap each other because the opening is disposed at a position facing each other between the differential signal wirings at a first interval of 0.3 to 0.6 mm. The characteristic impedance of the differential signal wiring is matched to a predetermined value. Further, in the second region in which the plurality of differential signal wirings are adjacent to each other with an interval narrower than the size of the opening, the interval between the openings in the direction along the differential signal wiring is wider than the first interval. Since it is arranged at the second interval, the interval between the overlapping portions of the pair of differential signal wirings and the opening becomes wide, and the influence due to the mismatch of the characteristic impedance of that portion may be reduced. it can. Further, even in the second region where the plurality of differential signal wirings are adjacent to each other at an interval narrower than the size of the opening, gas escapes through the opening of the ground or power supply conductor layer. It is possible to prevent peeling.

図1は、本発明の配線基板の実施形態の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board according to the present invention. 図2は、図1に示す配線基板の要部透視平面図である。FIG. 2 is a perspective view of a principal part of the wiring board shown in FIG.

次に、本発明の配線基板における実施形態の一例を説明する。本例の配線基板は、図1に示すように、スルーホール23を有する絶縁板13の上下面にビアホール21,22,24,25を有する複数の絶縁層11,12,14,15が積層されて成る絶縁基板10の表面および内部に配線導体用の複数の導体層31,32,33,34,35,36が配置されているとともにスルーホール23内に被着されたスルーホール導体43およびビアホール21,22,24,25内に被着されたビアホール導体41,42,44,45により上下の配線導体同士が接続された多層配線構造をしている。絶縁基板10の上面中央部には半導体素子Sの電極が半田バンプB1を介して電気的に接続される複数の半導体素子接続パッド50が格子状に配列形成されており、絶縁基板10の下面には外部電気回路基板の配線導体に半田ボールB2を介して電気的に接続される外部接続パッド60が形成されている。これらの半導体素子接続パッド50と外部接続パッド60とは、所定のもの同士が導体層31,32,33,34,35,36およびスルーホール導体23およびビアホール導体21,22,24,25により互いに電気的に接続されている。なお、導体層31,32,33,34,35,36は、差動信号配線やこれに対向する接地または電源導体を含んでいる。さらに、最上層の絶縁層11および導体層31の表面には半導体素子接続パッド50の中央部を露出させる開口部を有するソルダーレジスト層71が被着されており、最下層の絶縁層15および導体層36の表面には外部接続パッド60の中央部を露出させる開口部を有するソルダーレジスト層72が被着されている。   Next, an example of an embodiment of the wiring board of the present invention will be described. As shown in FIG. 1, the wiring board of this example has a plurality of insulating layers 11, 12, 14, 15 having via holes 21, 22, 24, 25 stacked on the upper and lower surfaces of the insulating plate 13 having through holes 23. A plurality of conductor layers 31, 32, 33, 34, 35, 36 for wiring conductors are arranged on the surface and inside of the insulating substrate 10, and the through-hole conductor 43 and the via hole deposited in the through-hole 23. A multilayer wiring structure in which upper and lower wiring conductors are connected to each other by via-hole conductors 41, 42, 44, and 45 deposited in 21, 22, 24, and 25, respectively. A plurality of semiconductor element connection pads 50 to which the electrodes of the semiconductor element S are electrically connected via the solder bumps B1 are arranged in a lattice pattern at the center of the upper surface of the insulating substrate 10. Are formed with external connection pads 60 which are electrically connected to the wiring conductors of the external electric circuit board via solder balls B2. These semiconductor element connection pads 50 and external connection pads 60 are connected to each other by conductor layers 31, 32, 33, 34, 35, 36 and through-hole conductors 23 and via-hole conductors 21, 22, 24, 25. Electrically connected. The conductor layers 31, 32, 33, 34, 35, and 36 include differential signal wiring and ground or power supply conductors facing the differential signal wiring. Furthermore, a solder resist layer 71 having an opening exposing the central portion of the semiconductor element connection pad 50 is deposited on the surfaces of the uppermost insulating layer 11 and the conductor layer 31, and the lowermost insulating layer 15 and the conductor are exposed. A solder resist layer 72 having an opening that exposes the central portion of the external connection pad 60 is deposited on the surface of the layer 36.

絶縁板13は、配線基板のコア基板となる部材であり、例えばガラス繊維束を縦横に織り込んだガラス織物にエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させて成り、厚みが0.3〜1.5mm程度であり、その上面から下面にかけて直径が0.1〜0.3mm程度の複数のスルーホール23を有している。そして、その上下面には導体層33,34が被着されており、スルーホール23の内面にはスルーホール導体43が被着されている。なお、スルーホール導体43が被着されたスルーホール23内は樹脂により充填されている。   The insulating plate 13 is a member that becomes a core substrate of a wiring board, and is formed by impregnating a glass fabric in which glass fiber bundles are woven vertically and horizontally with a thermosetting resin such as epoxy resin or bismaleimide triazine resin, and has a thickness of 0. It has a plurality of through holes 23 with a diameter of about 0.1 to 0.3 mm from the upper surface to the lower surface. Conductive layers 33 and 34 are deposited on the upper and lower surfaces, and a through-hole conductor 43 is deposited on the inner surface of the through-hole 23. The through hole 23 to which the through hole conductor 43 is attached is filled with resin.

このような絶縁板13は、ガラス織物に未硬化の熱硬化性樹脂を含浸させた絶縁シートを熱硬化させた後、これに上面から下面にかけてスルーホール23をドリル加工することにより製作される。なお、絶縁板13上下面の導体層33,34は、絶縁板13用の絶縁シートの上下全面に厚みが3〜50μm程度の銅箔を貼着しておくとともに、この銅箔をシートの硬化後にエッチング加工することにより所定のパターンに形成される。また、スルーホール23内面のスルーホール導体43は、スルーホール23内面に無電解めっき法および電解めっき法により厚みが3〜50μm程度の銅めっき膜を析出させることにより形成される。なお、スルーホール23内を樹脂により充填するには、スルーホール導体43が形成されたスルーホール23内に未硬化のペースト状の熱硬化性樹脂をスクリーン印刷法により充填し、その後、充填された樹脂を熱硬化させる方法が採用される。   Such an insulating plate 13 is manufactured by thermally curing an insulating sheet in which a glass fabric is impregnated with an uncured thermosetting resin, and then drilling through holes 23 from the upper surface to the lower surface. The conductor layers 33 and 34 on the upper and lower surfaces of the insulating plate 13 have a copper foil having a thickness of about 3 to 50 μm adhered to the entire upper and lower surfaces of the insulating sheet for the insulating plate 13, and the copper foil is cured on the sheet. A predetermined pattern is formed by etching later. The through hole conductor 43 on the inner surface of the through hole 23 is formed by depositing a copper plating film having a thickness of about 3 to 50 μm on the inner surface of the through hole 23 by an electroless plating method and an electrolytic plating method. In addition, in order to fill the inside of the through hole 23 with a resin, an uncured pasty thermosetting resin was filled into the through hole 23 in which the through hole conductor 43 was formed by a screen printing method, and then filled. A method of thermally curing the resin is employed.

絶縁板13の上下面に積層された各絶縁層11,12,14,15は、ビルドアップ絶縁層であり、エポキシ樹脂等の熱硬化性樹脂に酸化珪素粉末等の無機絶縁物フィラーを30〜70質量%程度分散させた絶縁材料から成る。絶縁層11,12,14,15は、それぞれの厚みが20〜60μm程度であり、各層の上面から下面にかけて直径が30〜100μm程度の複数のビアホール21,22,24,25を有している。ビアホール21,22,24,25内には、ビアホール導体41,42,44,45がそれぞれ充填されており、これらのビアホール導体41,42,44,45を介して導体層31,32,33,34,35,36の所定の配線パターン同士を電気的に接続することにより高密度配線が立体的に形成可能となっている。このような各絶縁層11,12,14,15は、厚みが20〜60μm程度の未硬化の熱硬化性樹脂から成る絶縁フィルムを絶縁板13の上下面に貼着し、これを熱硬化させるとともにレーザ加工によりビアホール22,24を穿孔し、さらにその上に同様にして次の絶縁層11,15を順次積み重ねることによって形成される。なお、各絶縁層11,12,14,15の表面に被着された導体層31,32,35,36およびビアホール21,22,24,25内に充填されたビアホール導体41,42,44,45は、各絶縁層11,12,14,15を形成する毎に各絶縁層11,12,14,15の表面およびビアホール21,22,24,25内に5〜50μm程度の厚みの銅めっき膜を公知のセミアディティブ法等のパターン形成法により所定のパターンに被着させることによって形成される。   The insulating layers 11, 12, 14, and 15 laminated on the upper and lower surfaces of the insulating plate 13 are build-up insulating layers, and an inorganic insulating filler such as silicon oxide powder is added to a thermosetting resin such as an epoxy resin to 30 to 30. It is made of an insulating material dispersed by about 70% by mass. The insulating layers 11, 12, 14, and 15 each have a thickness of about 20 to 60 μm, and have a plurality of via holes 21, 22, 24, and 25 having a diameter of about 30 to 100 μm from the upper surface to the lower surface of each layer. . The via holes 21, 22, 24, 25 are filled with via hole conductors 41, 42, 44, 45, respectively. Via these via hole conductors 41, 42, 44, 45, the conductor layers 31, 32, 33, 45 are filled. High density wiring can be formed in three dimensions by electrically connecting predetermined wiring patterns 34, 35, 36. Each of the insulating layers 11, 12, 14, and 15 has an insulating film made of an uncured thermosetting resin having a thickness of about 20 to 60 μm attached to the upper and lower surfaces of the insulating plate 13 and thermally cured. At the same time, via holes 22 and 24 are drilled by laser processing, and the next insulating layers 11 and 15 are sequentially stacked thereon in the same manner. The conductor layers 31, 32, 35, 36 deposited on the surfaces of the insulating layers 11, 12, 14, 15 and the via hole conductors 41, 42, 44, filled in the via holes 21, 22, 24, 25 are provided. 45 is a copper plating having a thickness of about 5 to 50 μm on the surface of each insulating layer 11, 12, 14, 15 and in the via holes 21, 22, 24, 25 every time each insulating layer 11, 12, 14, 15 is formed. The film is formed by depositing a film in a predetermined pattern by a pattern forming method such as a known semi-additive method.

また、ソルダーレジスト層71,72は、例えばアクリル変性エポキシ樹脂等の熱硬化性樹脂にシリカやタルク等のフィラーを含有させて成り、上面側のソルダーレジスト層71であれば、半導体素子接続パッド50の中央部を露出させる開口部を有しているとともに、下面側のソルダーレジスト層72であれば、外部接続パッド60の中央部を露出させる開口部を有している。このようなソルダーレジスト層71,72は、その厚みが10〜50μm程度であり、感光性を有するソルダーレジスト層71,72用の未硬化樹脂ペーストをロールコーター法やスクリーン印刷法を採用して絶縁層11,15の上に塗布し、これを乾燥させた後、露光および現像処理を行なって半導体素子接続パッド50や外部接続パッド60の中央部を露出させる開口部を形成した後、これを熱硬化させることによって形成される。   Further, the solder resist layers 71 and 72 are formed by adding a filler such as silica or talc to a thermosetting resin such as an acrylic-modified epoxy resin. If the solder resist layer 71 is on the upper surface side, the semiconductor element connection pad 50 is used. In addition, the solder resist layer 72 on the lower surface side has an opening that exposes the central portion of the external connection pad 60. The solder resist layers 71 and 72 have a thickness of about 10 to 50 μm, and the uncured resin paste for the solder resist layers 71 and 72 having photosensitivity is insulated by adopting a roll coater method or a screen printing method. After coating on the layers 11 and 15 and drying them, exposure and development are performed to form openings that expose the central portions of the semiconductor element connection pads 50 and the external connection pads 60, and then this is heated. It is formed by curing.

ここで、図1に示した配線基板における差動信号配線およびそれに対向する接地または電源導体層の一部を図2に要部透視平面図で示す。なお図2では、差動信号配線80と、これに対向するように配置された接地または電源導体層90を示している。図2に示すように、差動信号配線80は、互いに並行に延びる一組の帯状配線導体80aと80bとがペアになっている。帯状配線導体80a,80bは、その厚みが10〜20μm、幅が20〜30μm、互いの間隔が30〜75μm程度であり、その特性インピーダンスが概ね100Ωとなるように配置されている。他方、接地または電源導体層90は、概ねベタパターンであり、その一部にガス抜き用の方形の開口部90aが多数形成されている。開口部90aは一辺の長さが0.10〜0.15mm程度である。   Here, the differential signal wiring and a part of the grounding or power supply conductor layer facing the differential signal wiring in the wiring board shown in FIG. FIG. 2 shows the differential signal wiring 80 and the ground or power supply conductor layer 90 disposed so as to face the differential signal wiring 80. As shown in FIG. 2, in the differential signal wiring 80, a pair of strip-shaped wiring conductors 80a and 80b extending in parallel with each other is paired. The strip-like wiring conductors 80a and 80b have a thickness of 10 to 20 [mu] m, a width of 20 to 30 [mu] m, a distance of about 30 to 75 [mu] m, and are arranged so that their characteristic impedance is approximately 100 [Omega]. On the other hand, the ground or power supply conductor layer 90 is generally a solid pattern, and a plurality of rectangular openings 90a for venting gas are formed in a part thereof. The opening 90a has a side length of about 0.10 to 0.15 mm.

この配線基板では、複数の差動信号配線80が開口部90aの大きさよりも広い間隔で隣接する第1の領域A1と、複数の差動信号配線80が開口部90aの大きさよりも狭い間隔で互いに隣接する第2の領域A2とが形成されている。半導体素子Sを搭載する配線基板では、半導体素子Sが搭載される上面中央部から外周部に向けて多数の差動信号配線80が互いの間隔を広げるようにして延びるため、このような第1の領域A1と第2の領域A2とが形成される。   In this wiring board, a plurality of differential signal wirings 80 are adjacent to each other at a wider interval than the size of the opening 90a, and a plurality of differential signal wirings 80 are spaced at a smaller interval than the size of the opening 90a. A second region A2 adjacent to each other is formed. In the wiring board on which the semiconductor element S is mounted, the large number of differential signal wirings 80 extend from the central portion of the upper surface on which the semiconductor element S is mounted toward the outer peripheral portion so as to increase the distance between them. Region A1 and second region A2 are formed.

そして本例の配線基板においては、開口部90aが第1の領域A1においては差動信号配線80同士の間に対向する位置に開口部90a同士の間隔が0.3〜0.6mmとなるように配置されているとともに、第2の領域A2においては差動信号配線80に沿った方向における開口部90a同士の間隔が1.0〜1.5mmとなるように配置されている。   In the wiring board of this example, the opening 90a is located at a position facing the gap between the differential signal wires 80 in the first region A1, so that the interval between the openings 90a is 0.3 to 0.6 mm. In the second region A2, the gaps between the openings 90a in the direction along the differential signal wiring 80 are 1.0 to 1.5 mm.

このように第1の領域A1では、差動信号配線80同士の間に対向する位置に開口部90aが配置されていることから、差動信号配線80と開口部90aとが重なることがない。したがって差動信号配線80の特性インピーダンスが所定の値に整合される。また、第2の領域A2においては、差動信号配線80に沿った方向における開口部90a同士の間隔が1.0〜1.5mmの間隔となるように開口部90が配置されていることから、一組の差動信号配線80において開口部90aと重なり合う部分同士の間隔が広いものとなり、その部分の特性インピーダンスの不整合による影響を小さいものとすることができる。さらに第2の領域A2に形成された開口部90aからもガスが抜けるので、接地または電源導体層90に膨れや剥がれが発生することを防止することができる。したがって、本例の配線基板によれば、接地または電源導体層90に膨れや剥がれが発生することがないとともに、差動信号配線80を伝播する信号の反射損や挿入損が小さく、信号を正常に伝播させることが可能な配線基板を提供することができる。   As described above, in the first region A1, the opening 90a is arranged at a position facing between the differential signal wirings 80, so that the differential signal wiring 80 and the opening 90a do not overlap each other. Therefore, the characteristic impedance of the differential signal wiring 80 is matched to a predetermined value. In the second region A2, the openings 90 are arranged so that the distance between the openings 90a in the direction along the differential signal wiring 80 is 1.0 to 1.5 mm. In the pair of differential signal wirings 80, the interval between the overlapping portions of the opening 90a is wide, and the influence of mismatching in the characteristic impedance of the portion can be reduced. Further, since gas is released from the opening 90a formed in the second region A2, it is possible to prevent the ground or the power supply conductor layer 90 from being swollen or peeled off. Therefore, according to the wiring board of this example, the ground or power supply conductor layer 90 does not swell or peel off, and the reflection loss or insertion loss of the signal propagating through the differential signal wiring 80 is small, and the signal is normal It is possible to provide a wiring board that can be propagated to the substrate.

なお、開口部90aの開口部の一辺が、0.10mmより小さいと絶縁層11,12,14,15の樹脂が硬化する際に発生するガスが絶縁層11,12,14,15から容易に抜けず、接地または電源導体層90が膨れたり剥れたりしてしまう傾向があり、0.15mmより大きいと接地または電源導体層90のシールド効果が小さくなり、クロストークノイズが発生して半導体素子Sが誤作動してしまう危険性がある。したがって、開口部90aの開口部の一辺は、0.10〜0.15mmであることが好ましい。また、第1の領域A1における開口部90a同士の間隔が0.3mm未満であると、接地または電源導体層90のシールド効果が小さくなりクロストークノイズが発生して半導体素子Sが誤作動してしまう傾向にあり、0.6mmより大きいと配線基板全体における開口部90aの数が少なくなり、絶縁層11,12,14,15の樹脂が硬化する際に発生するガスが絶縁層11,12,14,15から容易に抜けず、接地または電源導体層90が膨れたり剥れたりしてしまう傾向にある。したがって、第1の領域A1における開口部90aの開口部間の間隔は、0.3〜0.6mmであることが好ましい。さらに、第2の領域A2における差動信号配線80に沿った方向における開口部90a同士の間隔が1.0mm未満であると、差動信号配線80の特性インピーダンスの不整合が大きくなって差動信号配線80に高速の信号を良好に伝播させることが困難となり、1.5mmを超えると、第2の領域において絶縁層11,12,14,15の樹脂が硬化する際に発生するガスが絶縁層11,12,14,15から容易に抜けず、接地または電源導体層90が膨れたり剥れたりしてしまう傾向にある。したがって、第2の領域A2における差動信号配線80に沿った方向における開口部90a同士の間隔は、1.0〜1.5mmの範囲が好ましい。   If one side of the opening of the opening 90a is smaller than 0.10 mm, the gas generated when the resin of the insulating layers 11, 12, 14, and 15 is cured is easily generated from the insulating layers 11, 12, 14, and 15. The ground or power supply conductor layer 90 tends to swell or peel off, and if it is larger than 0.15 mm, the shielding effect of the ground or power supply conductor layer 90 is reduced, and crosstalk noise is generated. There is a risk that S will malfunction. Therefore, it is preferable that one side of the opening part of the opening part 90a is 0.10 to 0.15 mm. Also, if the distance between the openings 90a in the first region A1 is less than 0.3 mm, the shielding effect of the ground or power supply conductor layer 90 is reduced, crosstalk noise is generated, and the semiconductor element S malfunctions. If the thickness is larger than 0.6 mm, the number of openings 90a in the entire wiring board is reduced, and the gas generated when the resin of the insulating layers 11, 12, 14, 15 is cured is generated in the insulating layers 11, 12, 14 and 15 do not easily come off, and the ground or power conductor layer 90 tends to swell or peel off. Therefore, the interval between the openings of the opening 90a in the first region A1 is preferably 0.3 to 0.6 mm. Furthermore, if the distance between the openings 90a in the direction along the differential signal line 80 in the second region A2 is less than 1.0 mm, the mismatch of the characteristic impedance of the differential signal line 80 becomes large, and the differential It becomes difficult to propagate high-speed signals satisfactorily to the signal wiring 80, and if it exceeds 1.5 mm, the gas generated when the resin of the insulating layers 11, 12, 14, and 15 is cured in the second region is insulated. The layers 11, 12, 14, and 15 do not easily come off, and the ground or power supply conductor layer 90 tends to swell or peel off. Therefore, the interval between the openings 90a in the direction along the differential signal line 80 in the second region A2 is preferably in the range of 1.0 to 1.5 mm.

11,12,14,15 絶縁層
80 差動信号配線
80a,80b 帯状配線導体
90 接地または電源導体層
90a ガス抜き用の開口部
A1 第1の領域
A2 第2の領域
DESCRIPTION OF SYMBOLS 11, 12, 14, 15 Insulating layer 80 Differential signal wiring 80a, 80b Strip | belt-shaped wiring conductor 90 Grounding or power supply conductor layer 90a Degassing opening A1 1st area | region A2 2nd area | region

Claims (2)

一辺の長さが0.10〜0.15mmである方形のガス抜き用の開口部が複数形成された接地または電源導体層と、該接地または電源導体層に絶縁層を介して対向配置され、前記絶縁層上を前記開口部の大きさよりも狭い間隔で並行に延びる2本の帯状配線導体から成る複数の差動信号配線とを具備し、複数の前記差動信号配線が前記開口部の大きさよりも広い間隔で互いに隣接する第1の領域と、複数の前記差動信号配線が前記開口部の大きさよりも狭い間隔で互いに隣接する第2の領域とが形成されて成る配線基板であって、前記開口部は、前記第1の領域においては前記差動信号配線同士の間に対向する位置に該開口部同士の間隔が0.3〜0.6mmである第1の間隔で配置されているとともに前記第2の領域においては前記差動信号配線に沿った方向における前記開口部同士の間隔が前記第1の間隔よりも広い第2の間隔で配置されていることを特徴とする配線基板。   A ground or power supply conductor layer in which a plurality of rectangular gas vent openings each having a side length of 0.10 to 0.15 mm are formed, and the ground or power supply conductor layer is disposed to face each other with an insulating layer interposed therebetween. A plurality of differential signal wirings composed of two strip-shaped wiring conductors extending in parallel on the insulating layer at a distance narrower than the size of the opening, and the plurality of differential signal wirings are the size of the opening. A wiring board formed by forming a first region adjacent to each other at a wider interval and a second region where the plurality of differential signal wirings are adjacent to each other at an interval narrower than the size of the opening. In the first region, the openings are arranged at positions facing each other between the differential signal wires at a first interval in which the interval between the openings is 0.3 to 0.6 mm. And the differential signal in the second region. Wiring board interval between the opening in the direction along the wire is characterized in that it is arranged in a wide second interval than the first distance. 前記第2の間隔が1.0〜1.5mmであることを特徴とする請求項1記載の配線基板。   The wiring board according to claim 1, wherein the second interval is 1.0 to 1.5 mm.
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JP5992825B2 (en) * 2012-12-29 2016-09-14 京セラ株式会社 Wiring board
JP6244138B2 (en) 2013-08-20 2017-12-06 新光電気工業株式会社 Wiring board and method of manufacturing wiring board
US9118516B1 (en) 2014-08-29 2015-08-25 International Business Machines Corporation Differential transmission line with common mode notch filter
US9479362B2 (en) 2014-08-29 2016-10-25 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Differential transmission line with common mode notch filter
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