JP2010061779A - 半導体メモリ装置のドメインクロシング回路 - Google Patents

半導体メモリ装置のドメインクロシング回路 Download PDF

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Publication number
JP2010061779A
JP2010061779A JP2009080470A JP2009080470A JP2010061779A JP 2010061779 A JP2010061779 A JP 2010061779A JP 2009080470 A JP2009080470 A JP 2009080470A JP 2009080470 A JP2009080470 A JP 2009080470A JP 2010061779 A JP2010061779 A JP 2010061779A
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JP
Japan
Prior art keywords
signal
count
latch
crossing circuit
count signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009080470A
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English (en)
Japanese (ja)
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JP2010061779A5 (enExample
Inventor
Hae Rang Choi
▲海▼ ▲郎▼ 崔
Yong-Ju Kim
龍 珠 金
Sung Woo Han
成 宇 韓
Hee-Woong Song
喜 雄 宋
▲益▼ 秀 ▲呉▼
Ic-Su Oh
Hyung-Soo Kim
亨 洙 金
泰 鎭 ▲黄▼
Tae-Jin Hwang
Ji Wang Lee
智 王 李
Jae Min Jang
在 旻 張
Chang Keun Park
昌 根 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JP2010061779A publication Critical patent/JP2010061779A/ja
Publication of JP2010061779A5 publication Critical patent/JP2010061779A5/ja
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/12Synchronisation of different clock signals provided by a plurality of clock generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
JP2009080470A 2008-09-05 2009-03-27 半導体メモリ装置のドメインクロシング回路 Pending JP2010061779A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080087783A KR100925393B1 (ko) 2008-09-05 2008-09-05 반도체 메모리 장치의 도메인 크로싱 회로

Publications (2)

Publication Number Publication Date
JP2010061779A true JP2010061779A (ja) 2010-03-18
JP2010061779A5 JP2010061779A5 (enExample) 2012-05-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009080470A Pending JP2010061779A (ja) 2008-09-05 2009-03-27 半導体メモリ装置のドメインクロシング回路

Country Status (3)

Country Link
US (1) US8099620B2 (enExample)
JP (1) JP2010061779A (enExample)
KR (1) KR100925393B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8326364B2 (en) * 2010-05-13 2012-12-04 Texas Instruments Incorporated High resolution, low power design for CPRI/OBSAI latency measurement
US8977881B2 (en) * 2011-08-12 2015-03-10 Apple Inc. Controller core time base synchronization
DE102016104767B4 (de) * 2016-03-15 2017-10-12 Pilz Gmbh & Co. Kg Vorrichtung und Verfahren zum Steuern einer automatisierten Anlage
KR102491691B1 (ko) * 2018-02-23 2023-01-27 에스케이하이닉스 주식회사 읽기 타임아웃 관리부 및 이를 포함하는 메모리 시스템과, 읽기 타임아웃 관리방법
KR20190134037A (ko) * 2018-05-24 2019-12-04 에스케이하이닉스 주식회사 도메인 크로싱 기능을 갖는 반도체 장치
US12449835B2 (en) * 2023-08-02 2025-10-21 Xilinx, Inc. Measuring and compensating for clock tree variation
WO2025136397A1 (en) * 2023-12-21 2025-06-26 Google Llc Clock domain crossing for time tracking

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327008A (ja) * 2003-04-29 2004-11-18 Hynix Semiconductor Inc ドメインクロシング回路
JP2006190441A (ja) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc 同期式半導体装置用のレイテンシ制御装置及びレイテンシ制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3078934B2 (ja) 1992-12-28 2000-08-21 富士通株式会社 同期型ランダムアクセスメモリ
KR100532441B1 (ko) * 2003-06-09 2005-11-30 삼성전자주식회사 레이턴시 회로를 구비하는 반도체 메모리 장치 및 그데이터 출력 제어 방법
TWI267871B (en) * 2004-01-10 2006-12-01 Hynix Semiconductor Inc Domain crossing device
US7084680B2 (en) * 2004-08-31 2006-08-01 Micron Technology, Inc. Method and apparatus for timing domain crossing
KR100829455B1 (ko) 2006-11-13 2008-05-15 주식회사 하이닉스반도체 반도체 메모리 장치의 데이터 출력 제어신호 생성회로 및방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327008A (ja) * 2003-04-29 2004-11-18 Hynix Semiconductor Inc ドメインクロシング回路
JP2006190441A (ja) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc 同期式半導体装置用のレイテンシ制御装置及びレイテンシ制御方法

Also Published As

Publication number Publication date
US20100064163A1 (en) 2010-03-11
KR100925393B1 (ko) 2009-11-09
US8099620B2 (en) 2012-01-17

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