JP2010056558A - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims 6
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 19
- 239000000969 carrier Substances 0.000 abstract description 15
- 230000002939 deleterious effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 11
- 238000002513 implantation Methods 0.000 description 10
- 230000032683 aging Effects 0.000 description 7
- 230000005527 interface trap Effects 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 barium-strontium nitride Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は、ショートチャネルの影響を低減し、薄くドープしたドレイン領域(LDD構造)を有さない。MOSトランジスタのゲート長さは1.25μm以下である。本発明のMOSトランジスタはゲート酸化物層を含み、この層は基板との間で平面状でかつストレスのないインタフェースを形成する。その結果、ホットキャリアの発生およびホットキャリアの悪影響が回避できる。LDD構造を省略したために、製造プロセスの複雑さが低下し、ソース−ドレインの直列抵抗が減り、その結果駆動電流と切り換え速度が改善された。
【選択図】図1
Description
11 ゲート構造体
12 基板
13 チャネル
14 ソース
15 ドレイン
16 酸化物層
17 第1酸化物部分
18 第2酸化物部分
19 インタフェース
20 材料層
21 導電層
30 注入部
50,51 プロット
Claims (8)
- 半導体デバイスであって、
ソース、ドレインおよび該ソースから該ドレインへと延長するチャネルを有するドープされた基板であって、該チャンネルが該基板のドーパント濃度よりも大きく、かつ該ソースおよびドレインのドーパント濃度よりも小さい1×1016/cm3から1×1019/cm3の範囲内のドーピング濃度を有している、ドープされた基板と、
該チャンネルの上に形成され、および幅が画成された酸化物であって、該基板と共に、ストレスが存在せず、かつ平坦なインターフェースを形成する酸化物と、
該チャンネルの上に配置され、該酸化物の幅と同じ幅と、1.25μm以下の長さと、を有するゲート構造体とを備え、
該半導体デバイスは、LDD構造における、チャンネル付近の低濃度でドープされたドレイン領域を含まない
ことを特徴とする半導体デバイス。 - 前記長さが、0.25μmから0.05μmの範囲内にある
請求項1記載の半導体デバイス。 - 前記ゲート構造体が、酸化物層を有し、
前記酸化物層の厚さが、1.5nmから20.0nmの範囲である請求項1記載の半導体デバイス。 - 前記ソースとドレインのドーピング濃度が、1×1020原子/cm3 から5×1020原子/cm3 の範囲内にある請求項1記載の半導体デバイス。
- 電界効果型トランジスタであって、
ソース、ドレインおよび該ソースから該ドレインへと延長するチャンネルを有するドープされた基板であって、該チャンネルが該基板のドーパント濃度よりも大きく、かつ該ソースおよびドレインのドーパント濃度よりも小さい1×1016/cm3から1×1019/cm3の範囲内のドーピング濃度を有している、ドープされた基板と、
ストレスが存在せず、かつ平坦な、該基板とインターフェースを形成する、幅により画成された酸化物を含むゲート構造体とを備え、
該ゲート構造体は、該酸化物の幅と同じ幅と、約0.05μmないし約0.25μmの範囲内の長さとを有し、および該電界効果型トランジスタはLDD構造における、チャンネル付近の低濃度でドープされたドレイン領域を含まない
ことを特徴とする電界効果型トランジスタ。 - 前記チャンネルの長さが、0.05μmから0.25μmの範囲内にある請求項5記載のトランジスタ。
- 前記酸化物層の厚さが、1.5nmから20.0nmの範囲内にある請求項5記載のトランジスタ。
- 前記ソースとドレインのドーピングレベルが、1×1020/cm3から5×1020/cm3の範囲内である
ことを特徴とする請求項5記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14090999P | 1999-06-24 | 1999-06-24 | |
US60/140909 | 1999-06-24 |
Related Parent Applications (1)
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JP2000190016A Division JP2001044432A (ja) | 1999-06-24 | 2000-06-23 | 半導体デバイス |
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JP2010056558A true JP2010056558A (ja) | 2010-03-11 |
JP5404308B2 JP5404308B2 (ja) | 2014-01-29 |
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JP2000190017A Expired - Lifetime JP3737341B2 (ja) | 1999-06-24 | 2000-06-23 | 集積回路 |
JP2000190016A Pending JP2001044432A (ja) | 1999-06-24 | 2000-06-23 | 半導体デバイス |
JP2000190018A Pending JP2001093901A (ja) | 1999-06-24 | 2000-06-23 | 酸化物の製造方法 |
JP2009246032A Expired - Lifetime JP5404308B2 (ja) | 1999-06-24 | 2009-10-27 | 半導体デバイス |
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JP2000190017A Expired - Lifetime JP3737341B2 (ja) | 1999-06-24 | 2000-06-23 | 集積回路 |
JP2000190016A Pending JP2001044432A (ja) | 1999-06-24 | 2000-06-23 | 半導体デバイス |
JP2000190018A Pending JP2001093901A (ja) | 1999-06-24 | 2000-06-23 | 酸化物の製造方法 |
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US (1) | US6492712B1 (ja) |
JP (4) | JP3737341B2 (ja) |
KR (3) | KR20010049621A (ja) |
TW (3) | TW594863B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20030235957A1 (en) * | 2002-06-25 | 2003-12-25 | Samir Chaudhry | Method and structure for graded gate oxides on vertical and non-planar surfaces |
JP2002009292A (ja) | 2000-06-22 | 2002-01-11 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US6548422B1 (en) * | 2001-09-27 | 2003-04-15 | Agere Systems, Inc. | Method and structure for oxide/silicon nitride interface substructure improvements |
US6890831B2 (en) | 2002-06-03 | 2005-05-10 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor device |
JP2007053279A (ja) * | 2005-08-19 | 2007-03-01 | Elpida Memory Inc | 半導体装置の製造方法 |
JP4809653B2 (ja) * | 2005-09-16 | 2011-11-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5728153B2 (ja) * | 2008-09-26 | 2015-06-03 | 株式会社東芝 | 半導体装置の製造方法 |
CN109560044A (zh) * | 2018-11-05 | 2019-04-02 | 复旦大学 | 一种抑制薄膜晶体管阈值电压漂移的方法 |
CN115799055A (zh) * | 2021-09-10 | 2023-03-14 | 长鑫存储技术有限公司 | 半导体结构制作方法及半导体结构处理设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01204435A (ja) * | 1987-12-28 | 1989-08-17 | American Teleph & Telegr Co <Att> | 集積回路の製造方法 |
JPH0621090A (ja) * | 1992-07-01 | 1994-01-28 | Sony Corp | 半導体装置の製造方法 |
JPH09283748A (ja) * | 1996-04-09 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH1032328A (ja) * | 1996-07-12 | 1998-02-03 | Sharp Corp | ゲート絶縁膜形成方法 |
JPH1126754A (ja) * | 1997-06-30 | 1999-01-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH1197687A (ja) * | 1997-09-22 | 1999-04-09 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2932569C2 (de) | 1979-08-10 | 1983-04-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen |
EP0617461B1 (en) * | 1993-03-24 | 1997-09-10 | AT&T Corp. | Oxynitride dielectric process for IC manufacture |
US5707888A (en) | 1995-05-04 | 1998-01-13 | Lsi Logic Corporation | Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation |
JP4001960B2 (ja) | 1995-11-03 | 2007-10-31 | フリースケール セミコンダクター インコーポレイテッド | 窒化酸化物誘電体層を有する半導体素子の製造方法 |
US6025280A (en) * | 1997-04-28 | 2000-02-15 | Lucent Technologies Inc. | Use of SiD4 for deposition of ultra thin and controllable oxides |
US6210999B1 (en) * | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
-
2000
- 2000-06-20 US US09/597,077 patent/US6492712B1/en not_active Expired - Lifetime
- 2000-06-23 JP JP2000190017A patent/JP3737341B2/ja not_active Expired - Lifetime
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- 2000-06-24 KR KR1020000035027A patent/KR100617894B1/ko not_active IP Right Cessation
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01204435A (ja) * | 1987-12-28 | 1989-08-17 | American Teleph & Telegr Co <Att> | 集積回路の製造方法 |
JPH0621090A (ja) * | 1992-07-01 | 1994-01-28 | Sony Corp | 半導体装置の製造方法 |
JPH09283748A (ja) * | 1996-04-09 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH1032328A (ja) * | 1996-07-12 | 1998-02-03 | Sharp Corp | ゲート絶縁膜形成方法 |
JPH1126754A (ja) * | 1997-06-30 | 1999-01-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH1197687A (ja) * | 1997-09-22 | 1999-04-09 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
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US6492712B1 (en) | 2002-12-10 |
JP3737341B2 (ja) | 2006-01-18 |
TW594863B (en) | 2004-06-21 |
JP2001044432A (ja) | 2001-02-16 |
KR100617894B1 (ko) | 2006-09-06 |
TW580747B (en) | 2004-03-21 |
KR20010049621A (ko) | 2001-06-15 |
JP5404308B2 (ja) | 2014-01-29 |
KR20010029836A (ko) | 2001-04-16 |
JP2001044194A (ja) | 2001-02-16 |
TW477015B (en) | 2002-02-21 |
KR100734757B1 (ko) | 2007-07-06 |
JP2001093901A (ja) | 2001-04-06 |
KR20010029837A (ko) | 2001-04-16 |
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