JP2010056472A5 - - Google Patents

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Publication number
JP2010056472A5
JP2010056472A5 JP2008222738A JP2008222738A JP2010056472A5 JP 2010056472 A5 JP2010056472 A5 JP 2010056472A5 JP 2008222738 A JP2008222738 A JP 2008222738A JP 2008222738 A JP2008222738 A JP 2008222738A JP 2010056472 A5 JP2010056472 A5 JP 2010056472A5
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JP
Japan
Prior art keywords
separation
rotary table
region
forming apparatus
film forming
Prior art date
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Application number
JP2008222738A
Other languages
English (en)
Japanese (ja)
Other versions
JP5195176B2 (ja
JP2010056472A (ja
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Application filed filed Critical
Priority claimed from JP2008222738A external-priority patent/JP5195176B2/ja
Priority to JP2008222738A priority Critical patent/JP5195176B2/ja
Priority to US12/539,642 priority patent/US8808456B2/en
Priority to KR1020090080144A priority patent/KR101562396B1/ko
Priority to TW098128931A priority patent/TWI423367B/zh
Priority to CN200910169416.5A priority patent/CN101660141B/zh
Publication of JP2010056472A publication Critical patent/JP2010056472A/ja
Publication of JP2010056472A5 publication Critical patent/JP2010056472A5/ja
Publication of JP5195176B2 publication Critical patent/JP5195176B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008222738A 2008-08-29 2008-08-29 成膜装置 Active JP5195176B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008222738A JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置
US12/539,642 US8808456B2 (en) 2008-08-29 2009-08-12 Film deposition apparatus and substrate process apparatus
KR1020090080144A KR101562396B1 (ko) 2008-08-29 2009-08-28 성막 장치 및 기판 처리 장치
TW098128931A TWI423367B (zh) 2008-08-29 2009-08-28 成膜裝置及基板處理裝置
CN200910169416.5A CN101660141B (zh) 2008-08-29 2009-08-31 成膜装置及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008222738A JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置

Publications (3)

Publication Number Publication Date
JP2010056472A JP2010056472A (ja) 2010-03-11
JP2010056472A5 true JP2010056472A5 (enExample) 2011-07-14
JP5195176B2 JP5195176B2 (ja) 2013-05-08

Family

ID=41788390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008222738A Active JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置

Country Status (2)

Country Link
JP (1) JP5195176B2 (enExample)
CN (1) CN101660141B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5195174B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5195175B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
CN102269310A (zh) * 2010-06-03 2011-12-07 北京中电科电子装备有限公司 旋转接头
JP5579009B2 (ja) * 2010-09-29 2014-08-27 東京エレクトロン株式会社 成膜装置および成膜方法
JP5884500B2 (ja) * 2012-01-18 2016-03-15 東京エレクトロン株式会社 成膜装置
JP6383674B2 (ja) * 2014-02-19 2018-08-29 東京エレクトロン株式会社 基板処理装置
CN106282969B (zh) * 2015-06-02 2019-02-15 中微半导体设备(上海)有限公司 化学气相沉积装置及其沉积方法
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
US20230243031A1 (en) * 2020-05-08 2023-08-03 Tokyo Electron Limited Film forming method and film forming apparatus
US12467144B2 (en) 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods
WO2024091305A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
WO2006041169A1 (ja) * 2004-10-15 2006-04-20 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法

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