JP5195176B2 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JP5195176B2
JP5195176B2 JP2008222738A JP2008222738A JP5195176B2 JP 5195176 B2 JP5195176 B2 JP 5195176B2 JP 2008222738 A JP2008222738 A JP 2008222738A JP 2008222738 A JP2008222738 A JP 2008222738A JP 5195176 B2 JP5195176 B2 JP 5195176B2
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gas
separation
region
rotary table
forming apparatus
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JP2008222738A
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English (en)
Japanese (ja)
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JP2010056472A (ja
JP2010056472A5 (enExample
Inventor
寿 加藤
学 本間
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008222738A priority Critical patent/JP5195176B2/ja
Priority to US12/539,642 priority patent/US8808456B2/en
Priority to TW098128931A priority patent/TWI423367B/zh
Priority to KR1020090080144A priority patent/KR101562396B1/ko
Priority to CN200910169416.5A priority patent/CN101660141B/zh
Publication of JP2010056472A publication Critical patent/JP2010056472A/ja
Publication of JP2010056472A5 publication Critical patent/JP2010056472A5/ja
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JP2008222738A 2008-08-29 2008-08-29 成膜装置 Active JP5195176B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008222738A JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置
US12/539,642 US8808456B2 (en) 2008-08-29 2009-08-12 Film deposition apparatus and substrate process apparatus
TW098128931A TWI423367B (zh) 2008-08-29 2009-08-28 成膜裝置及基板處理裝置
KR1020090080144A KR101562396B1 (ko) 2008-08-29 2009-08-28 성막 장치 및 기판 처리 장치
CN200910169416.5A CN101660141B (zh) 2008-08-29 2009-08-31 成膜装置及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008222738A JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置

Publications (3)

Publication Number Publication Date
JP2010056472A JP2010056472A (ja) 2010-03-11
JP2010056472A5 JP2010056472A5 (enExample) 2011-07-14
JP5195176B2 true JP5195176B2 (ja) 2013-05-08

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ID=41788390

Family Applications (1)

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JP2008222738A Active JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置

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JP (1) JP5195176B2 (enExample)
CN (1) CN101660141B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5195175B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5195174B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置及び成膜方法
CN102269310A (zh) * 2010-06-03 2011-12-07 北京中电科电子装备有限公司 旋转接头
JP5579009B2 (ja) * 2010-09-29 2014-08-27 東京エレクトロン株式会社 成膜装置および成膜方法
JP5884500B2 (ja) * 2012-01-18 2016-03-15 東京エレクトロン株式会社 成膜装置
JP6383674B2 (ja) * 2014-02-19 2018-08-29 東京エレクトロン株式会社 基板処理装置
CN106282969B (zh) * 2015-06-02 2019-02-15 中微半导体设备(上海)有限公司 化学气相沉积装置及其沉积方法
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
WO2021225091A1 (ja) * 2020-05-08 2021-11-11 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20250095659A (ko) * 2022-10-27 2025-06-26 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버들의 구역들을 상관시키는 방법들, 및 관련 시스템들 및 방법들
US12467144B2 (en) 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
WO2006041169A1 (ja) * 2004-10-15 2006-04-20 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法

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Publication number Publication date
JP2010056472A (ja) 2010-03-11
CN101660141A (zh) 2010-03-03
CN101660141B (zh) 2014-04-16

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