JP2010050255A5 - - Google Patents

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Publication number
JP2010050255A5
JP2010050255A5 JP2008212683A JP2008212683A JP2010050255A5 JP 2010050255 A5 JP2010050255 A5 JP 2010050255A5 JP 2008212683 A JP2008212683 A JP 2008212683A JP 2008212683 A JP2008212683 A JP 2008212683A JP 2010050255 A5 JP2010050255 A5 JP 2010050255A5
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Japan
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convex
plane
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cross
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JP2008212683A
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English (en)
Japanese (ja)
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JP2010050255A (ja
JP5181924B2 (ja
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Priority to JP2008212683A priority Critical patent/JP5181924B2/ja
Priority claimed from JP2008212683A external-priority patent/JP5181924B2/ja
Priority to US12/461,409 priority patent/US8138002B2/en
Priority to CN2009101673722A priority patent/CN101656210B/zh
Publication of JP2010050255A publication Critical patent/JP2010050255A/ja
Publication of JP2010050255A5 publication Critical patent/JP2010050255A5/ja
Priority to US13/356,202 priority patent/US8409893B2/en
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Publication of JP5181924B2 publication Critical patent/JP5181924B2/ja
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JP2008212683A 2008-08-21 2008-08-21 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法 Active JP5181924B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008212683A JP5181924B2 (ja) 2008-08-21 2008-08-21 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法
US12/461,409 US8138002B2 (en) 2008-08-21 2009-08-11 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing
CN2009101673722A CN101656210B (zh) 2008-08-21 2009-08-21 半导体发光元件及其制造方法、凸起部分及其形成方法
US13/356,202 US8409893B2 (en) 2008-08-21 2012-01-23 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008212683A JP5181924B2 (ja) 2008-08-21 2008-08-21 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法

Publications (3)

Publication Number Publication Date
JP2010050255A JP2010050255A (ja) 2010-03-04
JP2010050255A5 true JP2010050255A5 (enrdf_load_stackoverflow) 2011-08-04
JP5181924B2 JP5181924B2 (ja) 2013-04-10

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JP2008212683A Active JP5181924B2 (ja) 2008-08-21 2008-08-21 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法

Country Status (2)

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JP (1) JP5181924B2 (enrdf_load_stackoverflow)
CN (1) CN101656210B (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201340397A (zh) * 2012-03-23 2013-10-01 Chi Mei Lighting Tech Corp 發光二極體元件及其製造方法
TWI657563B (zh) * 2015-12-15 2019-04-21 優顯科技股份有限公司 光電裝置及其製造方法
KR102190859B1 (ko) * 2016-05-20 2020-12-14 루미레즈 엘엘씨 발광 디바이스를 위한 p형 층을 형성하는 방법
JP7171172B2 (ja) * 2016-08-29 2022-11-15 キヤノン株式会社 発光素子、発光素子アレイ、露光ヘッド、および、画像形成装置
CN108461388B (zh) * 2018-03-26 2020-11-06 云谷（固安）科技有限公司 一种衬底结构、加工方法和显示装置
CN108847573B (zh) * 2018-06-27 2021-06-01 湖北光安伦芯片有限公司 垂直腔面发射激光器及其制作方法
JP7248152B2 (ja) * 2020-01-22 2023-03-29 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN112366262B (zh) * 2020-09-30 2021-10-08 华灿光电（浙江）有限公司 红光发光二极管芯片及其制作方法
US12289929B2 (en) 2020-12-24 2025-04-29 Asahi Kasei Microdevices Corporation Infrared device comprising mesa portion including three lateral surfaces forming specified angles with substrate face
CN113675722B (zh) * 2021-07-14 2024-10-29 威科赛乐微电子股份有限公司 一种Cap layer层蚀刻优化方法
CN117637470B (zh) * 2023-11-30 2024-08-02 山东大学 一种碳化硅器件双层金属的刻蚀方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190366A (ja) * 1983-04-13 1984-10-29 Nippon Telegr & Teleph Corp <Ntt> ３−ｖ族化合物結晶用化学エツチング液
JP3097557B2 (ja) * 1996-05-20 2000-10-10 日本電気株式会社 半導体装置の製造方法
JP4154757B2 (ja) * 1998-07-06 2008-09-24 ソニー株式会社 ＡｌＧａＡｓ層の成長方法および半導体レーザの製造方法
JP2000243760A (ja) * 1999-02-23 2000-09-08 Nec Corp 半導体装置の製造方法
JP2001007118A (ja) * 1999-06-22 2001-01-12 Nec Corp 半導体装置及びその製造方法
JP2007088503A (ja) * 2000-03-14 2007-04-05 Sony Corp 半導体発光素子
JP3684321B2 (ja) * 2000-03-15 2005-08-17 株式会社ルネサステクノロジ 半導体装置の製造方法
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子

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