JP2010040710A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2010040710A
JP2010040710A JP2008200860A JP2008200860A JP2010040710A JP 2010040710 A JP2010040710 A JP 2010040710A JP 2008200860 A JP2008200860 A JP 2008200860A JP 2008200860 A JP2008200860 A JP 2008200860A JP 2010040710 A JP2010040710 A JP 2010040710A
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Japan
Prior art keywords
film
mis transistor
conductivity type
type mis
insulating film
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JP2008200860A
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Japanese (ja)
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JP2010040710A5 (enrdf_load_stackoverflow
Inventor
Hiromasa Fujimoto
裕雅 藤本
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Panasonic Corp
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Panasonic Corp
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Priority to JP2008200860A priority Critical patent/JP2010040710A/ja
Publication of JP2010040710A publication Critical patent/JP2010040710A/ja
Publication of JP2010040710A5 publication Critical patent/JP2010040710A5/ja
Withdrawn legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008200860A 2008-08-04 2008-08-04 半導体装置及びその製造方法 Withdrawn JP2010040710A (ja)

Priority Applications (1)

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JP2008200860A JP2010040710A (ja) 2008-08-04 2008-08-04 半導体装置及びその製造方法

Applications Claiming Priority (1)

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JP2008200860A JP2010040710A (ja) 2008-08-04 2008-08-04 半導体装置及びその製造方法

Publications (2)

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JP2010040710A true JP2010040710A (ja) 2010-02-18
JP2010040710A5 JP2010040710A5 (enrdf_load_stackoverflow) 2011-08-11

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JP2008200860A Withdrawn JP2010040710A (ja) 2008-08-04 2008-08-04 半導体装置及びその製造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011104788A1 (ja) * 2010-02-23 2011-09-01 パナソニック株式会社 半導体装置の製造方法
CN108987248A (zh) * 2017-06-01 2018-12-11 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
CN110379713A (zh) * 2018-04-13 2019-10-25 台湾积体电路制造股份有限公司 用于阈值电压调整的方法和由此形成的结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011104788A1 (ja) * 2010-02-23 2011-09-01 パナソニック株式会社 半導体装置の製造方法
CN108987248A (zh) * 2017-06-01 2018-12-11 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
CN110379713A (zh) * 2018-04-13 2019-10-25 台湾积体电路制造股份有限公司 用于阈值电压调整的方法和由此形成的结构
CN110379713B (zh) * 2018-04-13 2022-11-04 台湾积体电路制造股份有限公司 用于阈值电压调整的方法和由此形成的结构

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