JP2010016393A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2010016393A JP2010016393A JP2009197066A JP2009197066A JP2010016393A JP 2010016393 A JP2010016393 A JP 2010016393A JP 2009197066 A JP2009197066 A JP 2009197066A JP 2009197066 A JP2009197066 A JP 2009197066A JP 2010016393 A JP2010016393 A JP 2010016393A
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- adhesive layer
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- semiconductor element
- semiconductor device
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
【解決手段】半導体ウェハWの主面Ws上の接着層4にダイシングシート12を貼り付ける工程と、半導体ウェハ及び接着層をダイシングする工程と、ダイシングシートの粘着層10に放射線を照射した後に接着層付き半導体素子を得る工程と、接着層付き半導体素子を支持部材に接着する工程とを含み、上記接着層は接着剤組成物を含有し、硬化後の該接着剤組成物の260℃における引張弾性率が0.5〜500MPaであり、該接着剤組成物が下記式(1)及び(2)で表される条件を満たす、半導体装置の製造方法。1.0×103≦η1≦1.0×107(1)1.0×103≦η2≦1.0×107(2)
【選択図】図2
Description
1.0×103≦η1≦1.0×107 (1)
1.0×103≦η2≦1.0×107 (2)
[式中、η1は硬化前の接着剤組成物の180℃における溶融粘度(単位:Pa・s)を示し、η2は硬化前の接着剤組成物を170℃で1時間加熱した後の180℃における溶融粘度(単位:Pa・s)を示す。]
Z0:荷重を加える前の接着フィルムの厚さ
Z:荷重を加えた後の接着フィルムの厚さ
V:接着フィルムの体積
F:加えた荷重の大きさ
t:荷重を加えた時間
接着シートが例えば接着層のみからなる場合、当該接着層について上記「溶融粘度」を測定する。また、例えば基材、粘着層及び接着層が順に積層されてなる接着シートの場合、基材側から粘着層に放射線を照射することにより粘着層から接着層を剥離し、当該接着層について上記「溶融粘度」を測定する。また、例えば基材及び粘接着層からなる接着シートの場合、基材側から粘接着層に放射線を照射することにより基材から粘接着層を剥離し、当該粘接着層について上記「溶融粘度」を測定する。いずれの場合も、接着層又は粘接着層単独で測定可能であるが、例えば厚さが薄い場合には、加圧前後の厚さの変化が小さいので、算出される上記「溶融粘度」の値の誤差が大きくなる。よって、複数の接着層又は粘接着層を熱ラミネートにより積層し、積層された接着層又は粘接着層について上記「溶融粘度」を測定することが好ましい。また、接着層又は粘接着層の表面積が大き過ぎると、全面を均一に加圧することが困難であるため、接着層又は粘接着層は5〜15mmφ程度の大きさであることが好ましい。上記「溶融粘度」の測定に際しては、接着層又は粘接着層を11.3mmφの大きさに打ち抜いてサンプルを得る。加圧前後の接着層又は粘接着層の厚さは、マイクロメータにより測定することができる。加圧条件は適宜設定可能であるが、樹脂封止に一般的に用いられる180℃を加圧温度として設定する。荷重も適宜設定可能であるが、接着層又は粘接着層の組成によっては高荷重を加えたときにバラツキが大きくなることから、11.3mmφの大きさのサンプルに対しては1kgの荷重を加える。加圧時間も適宜設定可能であるが、接着層又は粘接着層が未硬化の熱硬化性樹脂を含有すると長時間の加圧により硬化が進行し、みかけの上記「溶融粘度」が高くなることから、加圧時間を3秒とする。
<接着シート>
図1は、第1実施形態に係る接着シートの概略断面図である。図1に示される接着シート6は、基材2と接着層4とが順次積層された構成を有している。この接着層4によって、後述するように、半導体素子が半導体素子搭載用の支持部材上に搭載される。より具体的には、接着シート6は、例えば半導体チップを配線付き基材上に搭載するためのダイボンディングシートとして用いられる。
基材2としては、例えば、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、ポリイミドフィルム等のプラスチックフィルム等を使用することができる。
接着層4は接着剤組成物を含有しており、硬化後の接着剤組成物の260℃における引張弾性率は、0.5〜500MPaである。また、接着剤組成物は下記式(1)及び(2)で表される条件を満たす。
1.0×103≦η1≦1.0×107 (1)
1.0×103≦η2≦1.0×107 (2)
ここで、式中、η1は硬化前の接着剤組成物の180℃における溶融粘度(単位:Pa・s)を示し、η2は硬化前の接着剤組成物を空気中で170℃で1時間加熱した後の180℃における溶融粘度(単位:Pa・s)を示す。
使用機器:高速液体クロマトグラフィー((株)島津製作所製C−R4A)
カラム:東ソーG6000HXLG4000HXL+G2000HXL
溶離液:DMF+LBr(0.03mol/L)+リン酸(0.06mol/L)
測定温度:30℃
流量:1.0ml/min
検出器:L−4200((株)日立製作所製)
ある。
[式中、L1及びL2は、それぞれ独立に、炭素数1〜30の2価の炭化水素基を示し、互いに同一でも異なっていてもよい。R1及びR2は、それぞれ独立に、好ましくは炭素数1〜30、より好ましくは1〜20、特に好ましくは1〜10の1価の炭化水素基を示し、互いに同一でも異なっていてもよい。mは1以上の整数を示す。]
次に、上述の接着シート6を用いて半導体装置を製造する方法について説明する。図2(a)〜図2(f)及び図3(a)〜図3(c)は、本実施形態に係る半導体装置の製造方法における一工程を示す工程断面図である。
次に、上述した半導体装置の製造方法により製造される半導体装置について説明する。図4は、本実施形態に係る半導体装置の概略断面図である。図4に示される半導体装置100は、半導体素子搭載用の支持部材14と、支持部材14上に設けられた複数(例えば2つ)の半導体素子Waとを備える。支持部材14と半導体素子Waとは接着層4aによって接着されている。また、半導体素子Wa,Wa同士も接着層4aによって接着されている。支持部材14は、回路パターン74及び端子76が形成された基板70からなる。この回路パターン74と半導体素子Waとが、金ワイヤ等のワイヤ78によってそれぞれ電気的に接続されている。そして、例えば樹脂製の封止材80が支持部材14の表面14a上に設けられることにより、半導体素子Wa、接着層4a、回路パターン74及びワイヤ78が封止される。なお、封止材80が、支持部材14の表面14aとは反対側の面にも設けられているとしてもよい。
<接着シート>
図5は、第2実施形態に係る接着シートの概略断面図である。図5に示される接着シート61は、基材8と粘着層10と接着層4とが順次積層された構成を有している。接着シート61は、例えば半導体チップを配線付き基材上に搭載するためのダイボンディングシートとして用いられる。
基材8は、ダイシングシートに好適に用いられるものであれば特に限定されない。より具体的には、例えば、基材2の構成材料と同じものが挙げられる。
粘着層10は、放射線の照射により硬化する放射線硬化型の粘着層である。粘着層10は、例えば、熱可塑性樹脂と放射線硬化性化合物とを含有し、必要に応じて熱硬化性樹脂や放射線照射によって塩基を発生する化合物等を含有する。
[式中、R3は水素原子又はメチル基を示し、q及びrは、それぞれ独立に、1以上の整数を示す。]
[式中、nは0又は1を示し、nが0のときL3は炭素数1〜30の2価の有機基を示し、nが1のときL3は炭素数1〜30の3価の有機基を示す。]
[式中、R4は水素原子又はメチル基を示し、L4はエチレン基又はプロピレン基を示す。]
[式中、L5は炭素数2〜30の2価の有機基を示す。]
[式中、kは0又は1を示す。]
次に、上述の接着シート61を用いて半導体装置を製造する方法について説明する。図6(a)〜図6(c)は、本実施形態に係る半導体装置の製造方法における一工程を示す工程断面図である。
第1実施形態と同様に、本実施形態に係る半導体装置の製造方法によっても、図4に示される半導体装置100と同様の半導体装置が得られる。
<接着シート>
図7は、第3実施形態に係る接着シートの概略断面図である。図7に示される接着シート62は、基材8と粘接着層16とが順次積層された構成を有している。粘接着層16によって、半導体素子は、半導体素子搭載用の支持部材上に搭載される。より具体的には、接着シート62は、例えば半導体チップを配線付き基材上に搭載するためのダイボンディングシートとして用いられる。
粘接着層16は接着剤組成物を含有する。この接着剤組成物の260℃における引張弾性率は、0.5〜500MPaである。また、この接着剤組成物は上記式(1)及び(2)で表される条件を満たす。
次に、上述の接着シート62を用いて半導体装置を製造する方法について説明する。図8(a)〜図8(f)は、本実施形態に係る半導体装置の製造方法における一工程を示す工程断面図である。
第1実施形態と同様に、本実施形態に係る半導体装置の製造方法によっても図4に示されるような半導体装置が得られる。なお、本実施形態では、図4中の接着層4aが粘接着層16aに置換された半導体装置が得られる。
5.0×103≦η1≦1.0×107 (3)
5.0×103≦η2≦1.0×107 (4)
1.0×104≦η1≦1.0×107 (5)
1.0×104≦η2≦1.0×107 (6)
まず、原材料として、エポキシ樹脂/エポキシ樹脂硬化剤/無機フィラー/カップリング剤/硬化促進剤/アクリルゴムの混合物を適量のシクロヘキサノンに溶解して溶液(ワニス)を得た。なお、各原材料の具体例を表1に示す。また、実施例1では、表2の配合1に示される質量比で各原材料を配合した。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例1と同様にして、実施例2の接着シートを得た。乾燥条件は、110℃で1.5分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例1と同様にして、実施例3の接着シートを得た。乾燥条件は、120℃で3分とした。
各原材料の質量比を表2の配合2としたこと以外は実施例1と同様にして、実施例4の接着シートを得た。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例4と同様にして、実施例5の接着シートを得た。乾燥条件は、110℃で1.5分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例4と同様にして、実施例6の接着シートを得た。乾燥条件は、120℃で3分とした。
各原材料の質量比を表2の配合3としたこと以外は実施例1と同様にして、実施例7の接着シートを得た。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例7と同様にして、実施例8の接着シートを得た。乾燥条件は、110℃で1.5分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例7と同様にして、実施例9の接着シートを得た。乾燥条件は、120℃で3分とした。
各原材料の質量比を表2の配合4としたこと以外は実施例1と同様にして、比較例1の接着シートを得た。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例1と同様にして、比較例2の接着シートを得た。乾燥条件は、130℃で5分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例1と同様にして、比較例3の接着シートを得た。乾燥条件は、100℃で1分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例4と同様にして、比較例4の接着シートを得た。乾燥条件は、130℃で5分とした。
各原材料の質量比を表2の配合5としたこと以外は実施例1と同様にして、比較例5の接着シートを得た。
まず、原材料として、ポリイミド樹脂/エポキシ樹脂/無機フィラーの混合物を溶剤に溶解して溶液(ワニス)を得た。具体的には、温度計、攪拌機及び塩化カルシウム管を備えた500mLフラスコに、1,12−ジアミノドデカン15.0g(0.0750モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(信越化学社製、商品名:LP−7100)6.21g(0.0250モル)、4,4’−(4,4’−イソプロピリデンジフェノキシ)ビス(フタル酸二無水物)41.6g(0.0800モル)、デカメチレンビストリメリテート二無水物10.5g(0.0200モル)及びN−メチル−2−ピロリドン150gを仕込み、60℃で3時間反応させた。その後、500mLフラスコ中に窒素ガスを吹き込みながら170℃で加熱し、水を溶媒の一部と共沸除去することにより、上記溶液を得た。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例10と同様にして、実施例11の接着シートを得た。乾燥条件は、135℃で30分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例10と同様にして、実施例12の接着シートを得た。乾燥条件は、150℃で45分とした。
接着層を形成する際の乾燥温度及び乾燥時間を変えたこと以外は実施例10と同様にして、比較例6の接着シートを得た。乾燥条件は、160℃で60分とした。
上記実施例1〜12及び比較例1〜6の接着シートの接着層をそれぞれ半導体ウェハに貼り合せ、必要に応じて基材を剥離した後に、接着層を介して半導体ウェハを市販の紫外線硬化型ダイシングテープ(古河電工(株)製、商品名:UC−334 EP−110)に貼り合せた。このダイシングテープは基材上に粘着層が形成されたものであり、貼り合わせの際には、粘着層と接着層とが接合するようにした。続いて、ダイサーを用いて半導体ウェハ及び接着層をダイシングした後、ダイシングテープの基材側から紫外線を照射(500J/cm2)して、接着層と粘着層との間を離間させることにより、接着層付き半導体素子を得た。
まず、各サンプルの接着層に含有される接着剤組成物の硬化後の260℃における引張弾性率、硬化前の接着剤組成物の180℃における溶融粘度η1、及び、硬化前の接着剤組成物を170℃で1時間加熱した後の180℃における溶融粘度η2を上述の測定方法により測定した。測定結果を表3に示す。
Claims (13)
- 半導体ウェハの主面上に設けられた熱硬化型の接着層に、基材と放射線硬化型の粘着層とが順次積層された構成を有するダイシングシートを、前記粘着層を介して貼り付ける工程と、
前記半導体ウェハ及び前記接着層をダイシングする工程と、
前記ダイシングする工程の後、前記粘着層に放射線を照射することにより前記接着層と前記粘着層との間の接着力を低下させ、前記粘着層及び前記基材を前記接着層から剥離除去し、接着層付き半導体素子を得る工程と、
前記接着層付き半導体素子を、前記接着層を介して半導体素子搭載用の支持部材に接着する工程と、
を含み、
前記接着層は接着剤組成物を含有し、硬化後の該接着剤組成物の260℃における引張弾性率が0.5〜500MPaであり、該接着剤組成物が下記式(1)及び(2)で表される条件を満たす、半導体装置の製造方法。
1.0×103≦η1≦1.0×107 (1)
1.0×103≦η2≦1.0×107 (2)
[式中、η1は硬化前の前記接着剤組成物の180℃における溶融粘度(単位:Pa・s)を示し、η2は硬化前の前記接着剤組成物を170℃で1時間加熱した後の180℃における溶融粘度(単位:Pa・s)を示す。] - 半導体ウェハの主面に、基材と放射線硬化型の粘着層と熱硬化型の接着層とが順次積層された構成を有するダイシングシートを、前記接着層を介して貼り付ける工程と、
前記半導体ウェハ及び前記接着層をダイシングする工程と、
前記ダイシングする工程の後、前記粘着層に放射線を照射することにより前記接着層と前記粘着層との間の接着力を低下させ、前記粘着層及び前記基材を前記接着層から剥離除去し、接着層付き半導体素子を得る工程と、
前記接着層付き半導体素子を、前記接着層を介して半導体素子搭載用の支持部材に接着する工程と、
を含み、
前記接着層は接着剤組成物を含有し、硬化後の該接着剤組成物の260℃における引張弾性率が0.5〜500MPaであり、該接着剤組成物が下記式(1)及び(2)で表される条件を満たす、半導体装置の製造方法。
1.0×103≦η1≦1.0×107 (1)
1.0×103≦η2≦1.0×107 (2)
[式中、η1は硬化前の前記接着剤組成物の180℃における溶融粘度(単位:Pa・s)を示し、η2は硬化前の前記接着剤組成物を170℃で1時間加熱した後の180℃における溶融粘度(単位:Pa・s)を示す。] - 前記接着剤組成物は、熱可塑性樹脂及び未硬化の熱硬化性樹脂を含有する、請求項1又
は2に記載の半導体装置の製造方法。 - 前記熱可塑性樹脂は、ポリイミド樹脂である、請求項3に記載の半導体装置の製造方法。
- 前記熱硬化性樹脂は、エポキシ樹脂である、請求項3又は4に記載の半導体装置の製造方法。
- 前記接着する工程の後に、前記接着層付き半導体素子の半導体素子と前記支持部材とをワイヤボンディングにより接続する工程と、
前記ワイヤボンディングにより接続する工程の後に、前記半導体素子を樹脂封止する工程と、
を更に含む、請求項1〜5のいずれか一項に記載の半導体装置の製造方法。 - 前記樹脂封止する工程において、前記接着層は半硬化の状態である、請求項6に記載の半導体装置の製造方法。
- 半導体ウェハの主面に、基材と熱硬化型及び放射線硬化型の粘接着層とが順次積層された構成を有するダイシングシートを、前記粘接着層を介して貼り付ける工程と、
前記半導体ウェハ及び前記粘接着層をダイシングする工程と、
前記ダイシングする工程の後、前記粘接着層に放射線を照射することにより前記基材と前記粘接着層との間の接着力を低下させ、前記基材を前記粘接着層から剥離除去し、粘接着層付き半導体素子を得る工程と、
前記粘接着層付き半導体素子を、前記粘接着層を介して半導体素子搭載用の支持部材に接着する工程と、
を含み、
前記粘接着層は接着剤組成物を含有し、硬化後の該接着剤組成物の260℃における引張弾性率が0.5〜500MPaであり、該接着剤組成物が下記式(1)及び(2)で表される条件を満たす、半導体装置の製造方法。
1.0×103≦η1≦1.0×107 (1)
1.0×103≦η2≦1.0×107 (2)
[式中、η1は硬化前の前記接着剤組成物の180℃における溶融粘度(単位:Pa・s)を示し、η2は硬化前の前記接着剤組成物を170℃で1時間加熱した後の180℃における溶融粘度(単位:Pa・s)を示す。] - 前記接着剤組成物は、熱可塑性樹脂、未硬化の熱硬化性樹脂、及び放射線硬化性化合物を含有する、請求項8に記載の半導体装置の製造方法。
- 前記熱可塑性樹脂は、ポリイミド樹脂である、請求項9に記載の半導体装置の製造方法。
- 前記熱硬化性樹脂は、エポキシ樹脂である、請求項9又は10に記載の半導体装置の製造方法。
- 前記接着する工程の後に、前記半導体素子と前記支持部材とをワイヤボンディングにより接続する工程と、
前記ワイヤボンディングにより接続する工程の後に、前記半導体素子を樹脂封止する工程と、
を更に含む、請求項8〜11のいずれか一項に記載の半導体装置の製造方法。 - 前記樹脂封止する工程において、前記粘接着層は半硬化の状態である請求項12に記載の半導体装置の製造方法。
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JP2013023684A (ja) * | 2011-07-26 | 2013-02-04 | Nitto Denko Corp | 接着シート及びその用途 |
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