JP2010010261A - 色変換発光装置 - Google Patents
色変換発光装置 Download PDFInfo
- Publication number
- JP2010010261A JP2010010261A JP2008165639A JP2008165639A JP2010010261A JP 2010010261 A JP2010010261 A JP 2010010261A JP 2008165639 A JP2008165639 A JP 2008165639A JP 2008165639 A JP2008165639 A JP 2008165639A JP 2010010261 A JP2010010261 A JP 2010010261A
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- light
- light emitting
- electrode pad
- emitting element
- color conversion
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229920005989 resin Polymers 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims abstract description 58
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 23
- 230000000052 comparative effect Effects 0.000 description 30
- 238000007639 printing Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 230000004907 flux Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 229910021485 fumed silica Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】 発光素子2上および基板1上には、それぞれ電極パッド5,4が設置され、ワイヤ6とワイヤボンディング部8,7でそれぞれ電気的に接合されており、発光素子2上のワイヤボンディング部8、電極パッド5、発光素子2の電極パッド5近傍の発光面(蛍光体層3と電極パッド5との間の発光面)2a、ならびに、基板1上のワイヤボンディング部7、電極パッド4の一部の範囲を、光反射樹脂9で被覆している。
【選択図】 図5
Description
少なくとも前記ワイヤボンディング部および前記発光素子の前記電極パッド近傍の発光面が、光反射樹脂で覆われていることを特徴としている。
2 発光素子
3 蛍光体層
4,5 電極パッド
5 制御部
6 ワイヤ
7,8 ワイヤボンディング部
9 光反射樹脂
Claims (2)
- 所定の波長の光を出射する発光素子と、該発光素子の発光面上に形成されている電極パッドと、該電極パッドにワイヤボンディング部でボンディングされたワイヤと、前記発光素子の電極パッドを除く発光面上に形成される色変換用の蛍光体層とを有する色変換発光装置において、
少なくとも前記ワイヤボンディング部および前記発光素子の前記電極パッド近傍の発光面が、光反射樹脂で覆われていることを特徴とする色変換発光装置。 - 請求項1記載の色変換発光装置において、前記光反射樹脂は、所定の樹脂に、酸化チタン粒子、SiO2粒子、Al2O3粒子、AlN粒子の少なくとも1つが混入されたものであることを特徴とする色変換発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008165639A JP5340653B2 (ja) | 2008-06-25 | 2008-06-25 | 色変換発光装置 |
US12/491,793 US8258528B2 (en) | 2008-06-25 | 2009-06-25 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008165639A JP5340653B2 (ja) | 2008-06-25 | 2008-06-25 | 色変換発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010010261A true JP2010010261A (ja) | 2010-01-14 |
JP5340653B2 JP5340653B2 (ja) | 2013-11-13 |
Family
ID=41446307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008165639A Expired - Fee Related JP5340653B2 (ja) | 2008-06-25 | 2008-06-25 | 色変換発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8258528B2 (ja) |
JP (1) | JP5340653B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013105929A (ja) * | 2011-11-15 | 2013-05-30 | Koito Mfg Co Ltd | 発光モジュールとその製造方法及び車両用灯具 |
JP2013535111A (ja) * | 2010-06-24 | 2013-09-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体モジュール |
CN113903849A (zh) * | 2021-08-24 | 2022-01-07 | 汇涌进光电(浙江)有限公司 | 一种表面哑光的led器件及其封装方法 |
CN113903849B (zh) * | 2021-08-24 | 2024-05-28 | 汇涌进光电(浙江)有限公司 | 一种表面哑光的led器件及其封装方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5255421B2 (ja) * | 2008-12-15 | 2013-08-07 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
JP5962102B2 (ja) * | 2011-03-24 | 2016-08-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP5745319B2 (ja) * | 2011-04-14 | 2015-07-08 | 日東電工株式会社 | 蛍光反射シート、および、発光ダイオード装置の製造方法 |
WO2014105645A1 (en) | 2012-12-27 | 2014-07-03 | Dow Corning Corporation | Composition for forming an article having excellent reflectance and flame retardant properties and article formed therefrom |
US9671085B2 (en) | 2014-04-22 | 2017-06-06 | Dow Corning Corporation | Reflector for an LED light source |
DE102020124016A1 (de) * | 2020-09-15 | 2022-03-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145519A (ja) * | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
JP2005026401A (ja) * | 2003-07-01 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 発光ダイオード |
JP2007281260A (ja) * | 2006-04-07 | 2007-10-25 | Sumitomo Metal Electronics Devices Inc | リフレクターとそれを用いた発光素子収納用パッケージ及びリフレクターに用いるレンズ |
JP2008010691A (ja) * | 2006-06-30 | 2008-01-17 | Hitachi Displays Ltd | 照明装置および照明装置を用いた表示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0785497B2 (ja) | 1986-02-12 | 1995-09-13 | セイコーエプソン株式会社 | ワイヤボンデイング部のモ−ルド構造 |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US7372198B2 (en) | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
KR20060077801A (ko) * | 2004-12-31 | 2006-07-05 | 엘지전자 주식회사 | 고출력 발광 다이오드 및 그의 제조 방법 |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
-
2008
- 2008-06-25 JP JP2008165639A patent/JP5340653B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-25 US US12/491,793 patent/US8258528B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145519A (ja) * | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
JP2005026401A (ja) * | 2003-07-01 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 発光ダイオード |
JP2007281260A (ja) * | 2006-04-07 | 2007-10-25 | Sumitomo Metal Electronics Devices Inc | リフレクターとそれを用いた発光素子収納用パッケージ及びリフレクターに用いるレンズ |
JP2008010691A (ja) * | 2006-06-30 | 2008-01-17 | Hitachi Displays Ltd | 照明装置および照明装置を用いた表示装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013535111A (ja) * | 2010-06-24 | 2013-09-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体モジュール |
US9818921B2 (en) | 2010-06-24 | 2017-11-14 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
KR101878127B1 (ko) * | 2010-06-24 | 2018-07-12 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 반도체 소자 |
US10217915B2 (en) | 2010-06-24 | 2019-02-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
JP2013105929A (ja) * | 2011-11-15 | 2013-05-30 | Koito Mfg Co Ltd | 発光モジュールとその製造方法及び車両用灯具 |
CN113903849A (zh) * | 2021-08-24 | 2022-01-07 | 汇涌进光电(浙江)有限公司 | 一种表面哑光的led器件及其封装方法 |
CN113903849B (zh) * | 2021-08-24 | 2024-05-28 | 汇涌进光电(浙江)有限公司 | 一种表面哑光的led器件及其封装方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090321770A1 (en) | 2009-12-31 |
US8258528B2 (en) | 2012-09-04 |
JP5340653B2 (ja) | 2013-11-13 |
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