JP2010003875A - 半導体ウエハの裏面研削方法、及びこの半導体ウエハの裏面研削方法に用いる粘着シート - Google Patents
半導体ウエハの裏面研削方法、及びこの半導体ウエハの裏面研削方法に用いる粘着シート Download PDFInfo
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- JP2010003875A JP2010003875A JP2008161396A JP2008161396A JP2010003875A JP 2010003875 A JP2010003875 A JP 2010003875A JP 2008161396 A JP2008161396 A JP 2008161396A JP 2008161396 A JP2008161396 A JP 2008161396A JP 2010003875 A JP2010003875 A JP 2010003875A
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- semiconductor wafer
- pressure
- sensitive adhesive
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Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract
表面に凹凸のある半導体ウエハの裏面研削方法、及びこの半導体ウエハの裏面研削方法に用いる粘着シートを提供する。
【解決手段】
基材と、該基材の一方の面に設けられた粘着剤層とを有する粘着シートを半導体ウエハの表面に貼り合わせて半導体ウエハを支持体に仮固定し、半導体ウエハの裏面を研削する工程において、
上記粘着剤層が放射線硬化型粘着剤のベースポリマー100重量部に対し、炭素数10以上のアルキル基を有するリン酸エステル系化合物を0.02重量部〜10重量部含有し、
少なくとも1種以上の炭素−炭素二重結合を有する多官能アクリレート系オリゴマー及び又はモノマーを10重量部を超えて200重量部以下含有し、多官能アクリレート系オリゴマー及び/又はモノマーの炭素−炭素二重結合1つあたりの重量平均分子量が250〜6500であることを特徴とする。
【選択図】なし
Description
上記粘着剤層が放射線硬化型粘着剤のベースポリマー100重量部に対し、炭素数10以上のアルキル基を有するリン酸エステル系化合物を0.02重量部〜10重量部含有し、
少なくとも1種以上の炭素−炭素二重結合を有する多官能アクリレート系オリゴマー及び/又はモノマーを10重量部を超えて200重量部以下含有し、多官能アクリレート系オリゴマー及び/又はモノマーの炭素−炭素二重結合1つあたりの重量平均分子量が250〜6000であることを特徴とする半導体ウエハの裏面研削方法である。
M=(Mw/Ndou)・・・・(1)
2種の多官能オリゴマー及び/又はモノマーを調合して使用する場合(例えばモノマーM1とオリゴマーO2)
M=(M1のMw/M1のNdou)×(M1のWp/M1とO2との総Wp)+(O2のMw/O2のNdou)×(O2のWp/M1とO2との総Wp)・・・(2)
(式中、Mは炭素−炭素二重結合1つあたりの重量平均分子量。Mwは重量平均分子量、Ndouは炭素−炭素二重結合数、Wpは重量部数を表す。)
なお、3種以上の多官能オリゴマー及び/又はモノマーを配合する場合は、上述した2種の多官能オリゴマー及び/又はモノマーに準じて算出することができる。
表面の平均粗さRaが50nmのアルミニウム蒸着ウエハ上に、高さ20μm〜30μm、直径200μm,ピッチ200μmのインクドットを有するパターンウエハを設計し、それを本発明評価用の標準被着体として用いた。
下記条件で粘着シートを作製し、上記標準ウエハに該粘着シートを日東精機(株)製DR−8500IIを用いて速度20mm/sec、テーブル温度20℃で貼り合わせた。
これは、上述(i)の方法(テーブル上に標準ウエハを載置し、その上に本発明のシートを粘着剤層(2)がウエハ側になるように重ね、圧着ロールなどの押圧手段により、押圧しながら貼り付ける)に相当する。
上記方法により粘着シートを貼り合わせた標準ウエハを、ディスコ(株)製シリコンウエハ研削機DFG840により厚さ200μmまで研削を行った。
上記方法により研削を行った標準ウエハを、日東精機(株)製DR−8500IIを用いて粘着シートの剥離を行った。ウエハを研削後、粘着シートに460mJ/cm2の紫外線を照射して粘着剤層を硬化させ、剥離用テープを貼り付けて、該テープとともに粘着シートを剥離した。
〔段差に対する追従性の代替評価〕
テープを回路等の凹凸のある被着体表面に貼り合わせた際の、段差に対する追従性を代替評価する方法として、シリコンミラーウエハの上に幅20mm高さ30μmのテープ(段差用テープ)を一本貼り付け、それを横切るように幅20mmのサンプルテープを2kg荷重のローラーにて貼り付けた。このとき、段差用テープとサンプルテープが交わるところに発生する非接触領域を顕微鏡(倍率100倍)で確認し、サンプルテープ貼り合わせ方向の非接触領域の幅が0.5mm以下の場合、段差に対する追従性を良好とした。
光学顕微鏡にて、テープ剥離後の標準ウエハ上の糊残り発生の有無を確認した。標準ウエハ上の任意の1cm×1cmの範囲中に確認される糊残りの面積を計測し、糊残りの割合を算出した。
〔粘着力の安定性評価〕
粘着剤層の経日安定性の確認は以下の方法にて実施した。すなわち初期値を100%とした時、60℃で1週間、40℃・相対湿度92%で1週間、10℃で1週間保存した後の粘着力値がすべて100±30%であった場合に安定性良好(○)とし、1条件でも70%より小さい場合あるいは130%より大きい場合には安定性不良(×)とした。
アクリル酸メチル40重量部とアクリル酸10重量部とアクリル酸2エチルヘキシル60重量部とを共重合して得られた重量平均分子量70万の共重合体(固形分35%)100重量部に対して、多官能アクリレート系オリゴマーとして日本合成(株)製、UV−3000B(重量平均分子量:18000、二重結合数:2)を50重量部、UV−1700B(重量平均分子量:2000、二重結合数:10)を50重量部加え(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:4600)、アルキルリン酸エステル系界面活性剤(東邦化学工業(株)製、製品名「フォスファノールRL−210」、アルキル基の炭素数18)0.02部、架橋剤としてイソシアネート系架橋剤(日本ポリウレタン社製、製品名「コロネートL」)1.00重量部、エポキシ系架橋剤(三菱ガス化学社製、製品名「テトラッドC」)、光重合開始剤(チバスペシャリティーケミカルズ製、製品名「イルガキュア651」)を3重量部を配合した粘着剤層となる樹脂溶液を配合・調整した。この溶液を、シリコーン剥離処理した厚さ38μmのポリエステルフィルムに、乾燥後の厚さが50μmになるように塗工し、120℃にて2分間乾燥した。その後、基材となる115μmのポリエチレンフィルムをラミネートし、半導体ウエハ加工用粘着シートを作製した。得られた半導体ウエハ加工用粘着シートを50℃加温にて、1日以上熟成し、上記に示す評価を実施した。その結果を表1に示す。
実施例1の粘着剤溶液の調整時にてUV−3000Bを70重量部、UV−1700Bを30重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:6360)以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを10重量部、UV−1700Bを90重量部(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:1080)加えた以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを50重量部、UV−1700Bを50重量部(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:4600)加え、アルキルリン酸エステル系界面活性剤(東邦化学工業(株)製、製品名「フォスファノールRL−210」、アルキル基の炭素数18)を10重量部加えた以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−6300B(重量平均分子量:3700、二重結合数:7)を80重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:530)以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを50重量部、UV−1700Bを50重量部加え(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:4600)、アルキルリン酸エステル系界面活性剤(東邦化学工業(株)製、製品名「フォスファノールRL−210」、アルキル基の炭素数18)0.01重量部加えた以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液調整時に、紫光UV−1700B(重量平均分子量:2000、二重結合数:10)を100重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:200)以外は全て実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを80重量部、UV−1700Bを20重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:7240)以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを120重量部、UV−1700Bを120重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:4600)、アルキルリン酸エステル系界面活性剤(東邦化学工業(株)製、製品名「フォスファノールRL−210」、アルキル基の炭素数18)を11重量部加えた以外はすべて実施例1と同様の操作にて粘着シートを作製した。
実施例1の粘着剤溶液の調整時にてUV−3000Bを5重量部、UV−1700Bを5重量部加えた(調合した多官能オリゴマー溶液の二重結合1つあたりの重量平均分子量:4600)以外はすべて実施例1と同様の操作にて粘着シートを作製した。
Claims (5)
- 基材と、該基材の一方の面に設けられた粘着剤層とを有する粘着シートを半導体ウエハの表面に貼り合わせて半導体ウエハを支持体に仮固定し、半導体ウエハの裏面を研削する工程において、
前記粘着剤層が放射線硬化型粘着剤のベースポリマー100重量部に対し、炭素数10以上のアルキル基を有するリン酸エステル系化合物を0.02重量部〜10重量部含有し、
少なくとも1種以上の炭素−炭素二重結合を有する多官能アクリレート系オリゴマー及び/又はモノマーを10重量部を超えて200重量部以下含有し、多官能アクリレート系オリゴマー及び/又はモノマーの炭素−炭素二重結合1つあたりの重量平均分子量が250〜6500であることを特徴とする半導体ウエハの裏面研削方法。 - 前記粘着剤層が炭素数15〜60の直鎖アルキル基を有するリン酸エステル系化合物を含有することを特徴とする請求項1に記載の半導体ウエハの裏面研削方法。
- 前記粘着剤層が融点40℃〜110℃のリン酸エステル系化合物を含有することを特徴とする請求項1または2に記載の半導体ウエハの裏面研削方法。
- 前記半導体ウエハの表面が1μm〜30μmの凹凸パターンと表面粗さ30nm〜100nmの微細な凹凸を有することを特徴とする請求項1〜3のいずれかに記載の半導体ウエハの裏面研削方法。
- 請求項1〜4のいずれかに記載の半導体ウエハの裏面研削方法に用いる粘着シート。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011187832A (ja) * | 2010-03-10 | 2011-09-22 | Hitachi Maxell Ltd | ウェハ裏面研削用粘着シート、その製造方法及びその使用方法 |
JP2012054432A (ja) * | 2010-09-01 | 2012-03-15 | Nitto Denko Corp | 半導体ウエハ保護用粘着シート |
JP2012054431A (ja) * | 2010-09-01 | 2012-03-15 | Nitto Denko Corp | 半導体ウエハ保護用粘着シート |
JP2012201846A (ja) * | 2011-03-28 | 2012-10-22 | Furukawa Electric Co Ltd:The | 半導体ウエハ加工用粘着テープ |
WO2013168773A1 (ja) * | 2012-05-10 | 2013-11-14 | 富士フイルム株式会社 | 導電膜積層体、タッチパネル、配線基板、電子機器、透明両面粘着シート、透明粘着シート |
JPWO2014003056A1 (ja) * | 2012-06-29 | 2016-06-02 | 日立化成株式会社 | 半導体装置の製造方法 |
JP2021504946A (ja) * | 2018-01-22 | 2021-02-15 | エルジー・ケム・リミテッド | バックグラインドテープ |
JP7058841B2 (ja) | 2018-01-22 | 2022-04-25 | エルジー・ケム・リミテッド | バックグラインドテープ |
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JP5318474B2 (ja) | 2013-10-16 |
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