JP2009539270A5 - - Google Patents
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- Publication number
- JP2009539270A5 JP2009539270A5 JP2009513455A JP2009513455A JP2009539270A5 JP 2009539270 A5 JP2009539270 A5 JP 2009539270A5 JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009539270 A5 JP2009539270 A5 JP 2009539270A5
- Authority
- JP
- Japan
- Prior art keywords
- precursors
- steps
- deposition process
- precursor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 18
- 239000002243 precursor Substances 0.000 claims 17
- 239000010408 film Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 238000005137 deposition process Methods 0.000 claims 5
- 238000006243 chemical reaction Methods 0.000 claims 3
- 238000000354 decomposition reaction Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- -1 NF 3 Chemical compound 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/443,621 US7867905B2 (en) | 2001-04-21 | 2006-05-31 | System and method for semiconductor processing |
| US11/443,620 US7442615B2 (en) | 2001-04-21 | 2006-05-31 | Semiconductor processing system and method |
| PCT/US2007/070082 WO2007140455A2 (en) | 2006-05-31 | 2007-05-31 | System and method for semiconductor processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009539270A JP2009539270A (ja) | 2009-11-12 |
| JP2009539270A5 true JP2009539270A5 (https=) | 2010-07-22 |
Family
ID=38779474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009513455A Pending JP2009539270A (ja) | 2006-05-31 | 2007-05-31 | 半導体加工のためのシステム及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2032744A2 (https=) |
| JP (1) | JP2009539270A (https=) |
| KR (1) | KR20090017661A (https=) |
| WO (1) | WO2007140455A2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734195B2 (en) * | 2017-06-08 | 2020-08-04 | Lam Research Corporation | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH029789A (ja) * | 1988-06-28 | 1990-01-12 | Nec Corp | シリコンの成長方法 |
| JPH04162427A (ja) * | 1990-10-24 | 1992-06-05 | Fujitsu Ltd | 気相成膜装置および気相成膜方法 |
| JP2680202B2 (ja) * | 1991-03-20 | 1997-11-19 | 国際電気株式会社 | 気相成長方法及び装置 |
| JPH0574713A (ja) * | 1991-09-17 | 1993-03-26 | Nippondenso Co Ltd | 非晶質半導体薄膜の製造方法 |
| JPH06291060A (ja) * | 1993-03-30 | 1994-10-18 | Nissin Electric Co Ltd | 薄膜形成方法 |
| US6326248B1 (en) * | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
| JPH08186173A (ja) * | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
| US6610169B2 (en) * | 2001-04-21 | 2003-08-26 | Simplus Systems Corporation | Semiconductor processing system and method |
| US7713592B2 (en) * | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| JP2004311955A (ja) * | 2003-03-25 | 2004-11-04 | Sony Corp | 超薄型電気光学表示装置の製造方法 |
| JP4396547B2 (ja) * | 2004-06-28 | 2010-01-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
-
2007
- 2007-05-31 KR KR1020087032103A patent/KR20090017661A/ko not_active Ceased
- 2007-05-31 JP JP2009513455A patent/JP2009539270A/ja active Pending
- 2007-05-31 WO PCT/US2007/070082 patent/WO2007140455A2/en not_active Ceased
- 2007-05-31 EP EP07811981A patent/EP2032744A2/en not_active Withdrawn
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